CN1100563A - 栅格阵列掩模带处理方法 - Google Patents
栅格阵列掩模带处理方法 Download PDFInfo
- Publication number
- CN1100563A CN1100563A CN94103180A CN94103180A CN1100563A CN 1100563 A CN1100563 A CN 1100563A CN 94103180 A CN94103180 A CN 94103180A CN 94103180 A CN94103180 A CN 94103180A CN 1100563 A CN1100563 A CN 1100563A
- Authority
- CN
- China
- Prior art keywords
- sawing
- viscose glue
- small pieces
- fragment
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 38
- 230000000873 masking effect Effects 0.000 title description 2
- 239000003292 glue Substances 0.000 claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 6
- 231100000719 pollutant Toxicity 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 4
- 229920000297 Rayon Polymers 0.000 claims description 53
- 239000012634 fragment Substances 0.000 claims description 52
- 239000010410 layer Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims 2
- 230000000007 visual effect Effects 0.000 claims 2
- 238000005452 bending Methods 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 9
- 229920000715 Mucilage Polymers 0.000 abstract 6
- 238000003672 processing method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 21
- 206010013801 Duchenne Muscular Dystrophy Diseases 0.000 description 13
- 239000011241 protective layer Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1064—Partial cutting [e.g., grooving or incising]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
一种栅格阵列掩模带处理方法及其装置使得当
晶片通过具有粘胶图形的条带被锯切成小片时能保
护半导体晶片上的有源区不受粒子和液体污染物的
影响。粘胶图形与有源区之间的锯切通道相对应并
与之对齐。粘附条带到晶片上将每个有源区粘封在
一个无粘胶的保护壳中。该保护壳在锯切沿锯切通
道和粘胶进行时包括条带的无粘胶部分。锯切之后,
用紫外线直接通过条带对粘胶进行处理使条带脱离
小片。
Description
本发明涉及半导体晶片上有源区(active site)的保护,这种晶片被锯切成各个带有源区的小片,更详尽地说,本发明涉及在锯切期间和锯切之后保护众多阵列或矩阵中的这种有源区免受由锯切产生的或用于这种锯切中的残屑和有害物质污损的方法及其装置。
在半导体晶片的第一表面上制作众多有源区阵列已知有许多方法。每个有源区可由一个或多个晶体管组成,且可包括具有其它电路元件的集成电路。该晶片最终被分割成许多个别小片,也称为小方块或小条,每个小片包括有源区阵列中的一个,该阵列具有包含原先为晶片的第一表面一部分的“顶”表面。每个有源区阵列与其顶表面上的一个或多个连接片相联。连接片,通常通过淀积或其它方法形成在制作于晶片上的导体的顶部并与该导体电接触。有选择性地与有源区电连通。某些用于制造有源区的步骤也可用来制造导体,这些导体自身与有源区电连通。
通过被称之谓“锯切”的操作可有效地将晶片分割成各小片。锯切分割晶片是沿着广延在相邻有源区阵列存在的或最终要存在的区域之间的路线或通道进行的。
有许多技术可用来进行锯切,这种锯切对晶片具有机械磨损,这些技术包括使用旋转锯片和振动尖(Vibrating tip)。因此,锯切晶片动作的自身会产生残屑,这些残屑包括晶片的小屑片和可能的锯片或振动尖的小屑片。锯切通常还伴随冷却/润滑液体和其它物质进行,这些液体和物质用来防止锯片和振动尖损坏晶片并用来延长锯片和振动尖的寿命。
锯切中形成的残屑及用于锯切的物质会降低有源区的性能或使其失效。其结果是,晶片在进行制作有源区之前往往被锯切成小片。所形成的小片保持在锯切后的小片矩阵中,且对小片矩阵进行处理,在每个小片矩阵上制造有源区阵列。
如果有源区包含一个例如称为偏转镜器件或数字微镜器件(缩称“DMD”)的空间光调制器(SLM),则每个有源区甚至可能更易受到锯切中形成和使用的残屑和液体的影响。
DMD是形成在晶片上的一种多层结构,它包括光反射梁或类似的机械构件。构件与有源区相联并安装于或铰接于晶片材料以便在正常位置和其它位置之间可偏转或可移动。梁的偏转可通过静电吸引该梁朝向(或至)一个电位不同于该梁的邻近的电极来实现。梁的偏转将贮能于安装架或铰链中,这种贮能产生将梁返回到它正常位置的力。梁的运动可以是二进制或模拟的,这种运动由与梁相联并按寻址电路作用的有源区的电路元件控制。通过在梁下凹刻一个陷井很容易实现梁的偏转。通过适当地蚀刻淀积在晶片上的某层材料来制造这种陷井。
应用中,DMD′S的一个阵列或矩阵用来接收光源的光。入射到反射梁上的接收光可选择地反射或不反射到观察表面,取决梁的位置。这种反射光由每个梁引向仅选在某个位置中的观察面上,这种位置可以是正常位置或其它某个位置。在每个梁所选定位置外的其它所有位置,入射、反射光,不会落到观察面上。适当地激励与阵列或矩阵中的每个有源区的每个梁相联的寻址电路的电路元件可使观察面上的梁反射光呈现电视光栅像素阵列(如在通常电视中)或呈现像素扫描行(如在行或打印机中)。于是,每个有源区的梁作为一个像素或起一个像素作用。
由于一个DMD包括电路元件及微型可偏转梁,所以它特别容易受到锯切晶片形成的残屑和便于锯切所使用的液体和其它物质的影响。这种残屑会进入凹刻的陷井且阻碍梁的偏转。于是,在某个现有技术中,制做有源区的电路元件和蚀刻或确定梁的其它步骤后接着在其上淀积一保护层。然后进行锯切分割晶片成各个阵列,保护层用于防止锯切操作损坏电路元件和由蚀刻确定的梁。完成锯切之后,除掉保护层并在每个梁的下面制作凹蚀陷井。从而在制作陷井的时候避免了与锯切有关的物质进入陷井。
在有源区形成之前锯切不是要求在有源区制造过程中精确地保持所形成的各小片的原有的相对的定位就是要求每个小片各自处理制造它的有源区阵列。这些手段既花费大且它们的实施又费时。按上述顺序,虽电路元件制作和梁限定蚀刻均在锯切之前进行,但仍要求将在锯切后将除去的保护层安置就位。淀积保护层和其后的除掉保护层、其目的在于在锯切期间保护电路元件和蚀刻限定的梁,它们仍然是既花费大又费时。
本发明的一个目的在于提供一种保护整个处理过程中半导体晶片上的多个有源区阵列中的每个有源区的方法及其装置,尤其是保护包括一个DMD SLM或其它微机械的有源区,其中DMD依次包括电路元件和可偏转的光反射梁,以便电路元件的制作、梁限定蚀刻和陷井制作都可在一个未锯切的晶片上进行,从而使处理步骤最少同时可防止有源区因锯切遭到的损坏。
根据上述和其它可见的目的,其最主要的方面在于本发明研究了一种方法,该方法保护整个处理过程中的半导体晶片的第一表面上的有源区不受由将晶片锯切成各小片所产生的残屑和锯切中使用的物质的污染。每个小片上有一个有源区。锯切是沿着在有源区之间延伸的锯切通道进行的。首先,晶片的第一表面用一个第一带状元件加以限定。该第一元件在其一边有一个与锯切通道一致并对齐的黏胶图形。这些锯切通道或“街道”可通过在晶片上划线予以确定。
黏胶图形沿锯切通道粘附于晶片的第一表面,以便由该图形为界限的元件所含的非粘附性部分复盖于有源区之上并粘合使它们相对于污染物的入口呈密封状态。
接着,沿通道将晶片锯切成小片(Chip)。这种锯切也将元件锯切或切割成片段,每个片段粘附于一个小片。最后,对这种粘附物进行处理使这些片段脱离小片。
在较佳实施例中,处理粘胶使片段脱离小片是通片段进行的。特别是,最好元件可被紫外线透射且粘胶暴露于紫外线时变得无粘性。例如,粘胶可以是一种当暴露紫外线时会聚合和硬化的一种胶,由此丧失其粘性。一旦片段上的粘胶不再有粘力时,片段和小片分离或通过应用如负压施加工具可使片段和小片分离。
为了将晶片安置在锯架中或为了将粘胶图形与锯切通道对齐,一个具有用紫外线可退化的胶整个涂复的表面的第二带状元件可粘附到与第一表面相反的晶片的第二表面上。该第二元件也可随晶片被锯切,且它的片段可用与第一元件相同的方法使它脱离小片。
使用第二个元件将被锯切的小片相互安置在它们原有的相对的定位中也是迅速有效的。通过第一元件锯切和通过晶片仅部分锯切、或在任何情况下不通过第二元件锯切可实现上述作用。在小片切离部分被保留的晶片情况下整个第二元件能将小片保持在一起。
在主要目的方面,本发明也研究了实现上述晶体锯切同时又保护了其有源区的装置。该装置包括其上具有经处理可脱离的胶体图形的第一带状元件,可同样包括用同样胶体涂复的第二带状元件。
图1a和图1b分别概略地描述了已有技术用于锯切半导体晶片产生分割的小片,每个小片具有一个有源区的方法;
图2为具有各有源区阵列的一晶片的放大了的部分简示顶视图;
图3为显示在图2中的阵列之一的放大了的简示顶视图;
图4为从一晶片锯切的一小片的概略侧剖视图,其有源区阵用本发明的一装置结构进行保护;
图5为描绘在图2-4中的区阵列之一的一个有源区的侧剖视图;
图6为显示在图5中并取沿线6-6的一有源区的侧剖视图;
图7类同图6,它描绘了包括在图5和6的有源区中的一DMD的一个梁的偏转状况的视图;
图8和9概略地图示了按图1中概述的将一晶片锯切成小片的示图,它的每个小片上的有源区用本发明的装置进行保护;
图10显示了用已有技术保护的一小片的一有源区的示图;
图11为实施本发明的装置的放大了的部分顶视图;和
图12为概略表示使用本发明装置实施其方法的示图。
参见图1a和图1b,它们概略地描绘了沿锯切通道或街道15将半导体晶片14锯切成分开的小片16的两种已有技术的方法。如图2中所示,每个小片16包括一个有源区阵17,在图3中从整体上该有源区标为18。每个小片16也包括相联的连接片20。连接片20经淀积在晶片14上的导体22与有源区18电气连通,连接片20制作在导体22上面。导体22可以用制造有源区18的某些相同程序制造并电气上与有源区18连通。最后每个小片16各自安装到一个头部(未图示)以及连接片20通过至连接片20的和导电焊区的和它们之间的连接线(未图示)提供与头部上的导电焊区(未图示)电气连通。
每个有源区18可包括一个DMD或其它SLM,它们都标为24。较佳的DMD24通常为图5-7中所示的多层型的且在共同转让的Hornbeck的美国专利5,066,049和Lee的专利3,600,798中有更具体的描述。其它类型的DMD′s24在Cade的美国专利4,306,784、Hartstein等人的4,229,786、Nathanson等人的3,896,338和Guldberg等人的3,886,270中有揭示。上述任一类型的DMD′s可用于共同转让的美国专利Nelson等人的5,221,232、De Mond等人的5,079,544、Nelson的5,041,850和Thomas的4,788,225中所揭示的系统中。
参见图5-7,一种较佳的多层DMD24包括一个反射可偏转的梁26和相连的电路元件或用于选择偏转梁的寻址电路28。单独制造梁的方法和电路元件28在上述专利中被描述。通常通过从一正常位置(图6)移动或旋转到另一位置(图7)使梁26偏转。这种旋转使一个或多个支撑梁26的铰链30发生形变。这种被贮存的能量有使梁26趋向于回到图5和6的正常位置的趋势。铰链30和梁26两者都可用由两薄层32a和32b组成的层32产生,薄层32b的部分从薄层32a分离以便产生铰链30,最好参见图5。在每个梁26的下方提供一个凹刻的陷井34供调节偏转用。陷井34也可看作在每个梁26的上方或与每个梁26相邻,这要取决于图6和7的定位关系。通常,梁26的偏转是通过由电路元件28上的电位形成的电场将吸力施加其上实现的,这种电路元件28如可以是一个位于陷井34内的电极38a。电极38a的电位由电路元件28产生。其它电极38b-d也可设在陷井34中,用于可选择地对梁26的电位发生作用。梁26通过将光反射到一个观察面对唯一选定的其位置之一中入射其上的光进行调制。
当应用图1a中略述的已有方法和装置时,每个有源区18的阵列17中的每个DMD24的电路元件28和梁26能被保护不受残屑40的有害作用,这些残屑由在锯切晶片14成小片中使用的液体和其它物质42产生。有源区18制作在晶片14的顶面或第一表面14a上。
晶片14进行如44概述的形成电路元件28和限定梁26和它们的铰链但不形成陷井等处理后,晶片14如图10中47所概述用保护层46涂复。然后如48所述晶片14被锯切成小片16,保护层46防止有源区18和梁26受到残屑40和锯切中使用的物质42的不利影响。此后将层46分离并分别如50和52概述制作凹刻陷井34。
有两个原因使得在锯切前不制作陷井34。首先,如果存在陷井34,则当保护层46移去时,残屑40或其它物质42可能进入陷井34。除非这种残屑40或其它物质42被完全清理掉,否则梁26的偏转能力会丧失。其次,如果陷井34包含有保护层46的任何材料,则锯切后必须彻底清理掉它们。这种材料的存在(如保护层46的粒子)对于梁的偏转可具有与残屑40和其它物质42相同的有害作用。
接锯切48之后,小片16保持它们原先的相对的定位和位置,同时移去层46和制作陷井34。最后,对小片16进行钝化,分别被安装到管座上,用导线连接到焊接区,并加以封装,所有这些步骤分别描述在54、56、58和60。
除了设定有源区18和梁26不能容忍残屑40和其它物质42或保护层46外,图1b描述的一种方法和装置类同于图1a中所示那些。在这种情况下,晶片14按48在顶面14a上形成有源区18、梁26和陷井34之前被锯切,这些构件在将晶片14锯切成各个小片16之后构成的,因而小片16被固定并相互保持它们原有的相对的定位和位置。
因此,本发明允许DMD处理步骤44和52在锯切实施之前被执行且不需要将小片16相互放置在它们原有的相互定位的位置中。
参看图4、11和12,在处理步骤44和52被执行以形成包括DMD′s24的梁26、铰链30和陷井34的有源区18的阵列17之后,陷井34上用带状元件62复盖。元件62可为具有适当柔性的任何材料、为了下面要叙述的原因,它最好对紫外线是透明的或透射的。
按照图2、4和11,带状元件62带有粘胶图形64。粘胶图形64最好包含一个具有直粘胶线66的矩形栅格,这些直线66限定了它们之间的元件62的不带粘胶的片段68。为了下面要叙述的原因,粘胶66最好与紫外线发生反应而失去其粘性。
图形化的粘胶64与所有锯切通道15对齐并对中,这些通道可以是设想的也可以是事先用划线构成。图形64的每个盒状部分69包围一个无粘胶的片段68,与由包围它的阵列17的周边72定界的区域70相对应。每个周边72设在其阵列17的周边74和相联的连接片20之间。如图12中所示,图形64可以以任何方便的方式和通过任何方便的措施、如一种标准的准直仪(未图示),与锯切通道15对齐。
元件62可采用的材料包括___、___、___、和___粘胶64可以是___、___、___、或___。
粘胶64将元件62和其片段68固定到晶片14和其上的导体22,复盖并相对于残屑40和物质42的通路密封每个阵列17。特别是,图形化的粘胶64的盒状部分69和它的粘胶线66粘着到晶片14,以便无粘胶片段68复盖和胶封有源区18。
接安装元件到晶片14之后,沿相邻阵列17的相邻连接片20之间的锯切通道或街道15锯切晶片14,在这期间,安设的元件62如图8所示防止残屑40和物质42损害有源区18。如图11中所描绘的,如所知,锯切通道或街道15的网格可在锯切前通过对晶片14划线来确定。
锯切把晶片14分割成小片16,同时它也把元件62分成它的组成部分的无粘胶片段68。锯切操作最好通过总是沿粘胶图64的线66的中心切割元件62把元件62分成片段68,以便每个片段68在锯切后仍然粘着于该小片16。
锯切产生小片16,它的有源区18用锯切48形成的元件62的片段68密封。片段68,锯切后,继续粘着于小片16。元件62和它的片段68用来在锯切期间和其后作为临时性的保护和预防措施,这种措施维持原位直到刚要测试每个小片16上的DMD′s24之前为止。
因此,在测试前,片段68从它们的小片16上移去;测试之后,若需要,可使用永久性防护措施。
按照本发明,通过选择一种暴露于紫外线失去粘性的粘胶64使得移去片段68很方便。为了这个目的,元件62和它的片段68对紫外线是透明的。锯切48之后,用粘胶图64的部分69被粘附的带有片段68的小片通过片段68暴露于适当波长和强度的紫外线中。粘胶部分69通过片段68暴露于紫外线中,使部分69变得无粘性。最好,当粘胶64是可聚合的材料时,紫外线通过硬化它将其聚合直至它失去粘性为止。这种曝光步骤由参考号76标示在图12中。在片段68不再粘到小片16上之后,则小片16和片段68通过操作适当的工具或仪器(未图示,但用图12中的标号78表明)可被分离,这种仪器可用负压。
如图4、8、9和12中所示,也可使用第二带状元件80。特别是为了便利处理晶片14和为了将晶片14安装到一个标准的锯切架上(未图示),晶片14的与其上构成有源区18的面14a相反的一表面14b,利用元件80上的粘胶涂复区82,可粘接于元件80。除了粘胶82没有图形化外,第二元件80和它的粘胶82与元件62和它的粘胶64是相同的。因此,锯切48之后,在锯切期间元件62和80都被锯切成构件片段68和84,对粘胶64和82进行曝光可将片段68和84与小片16分开或便于用负压工具将小片16与片段68和84分离。
如果需要,使用元件80的,通过图9中所示,其锯切可使得晶片不完全被锯切开。将晶片14分成小片16可在那之后通过局部被锯切的晶片14在具有适当半径的弧形表面或边缘(未图示,但在图12中标为86)上进行。由于晶片14最初未完全锯切透,所以元件80最初也未切成片段84。因此,在局部锯切的晶片14被破裂成小片16之后,各小片16仍然安装在整个元件80上便于进行处理。
虽然已经描述了本发明各种较佳实施例,但是在不脱离由所附权利要求书所限定的本发明的情况下,本领域中的技术人员可对上述实施例做种种变化和附加新的实施例。
Claims (23)
1、一种保护先前制作在充分处理过的半导体晶片的第一表面上的有源区使之不受由锯切产生和锯切中使用的粒子和液体污染物的危害的方法,其中锯切晶片是沿着有源区之间的锯切通道进行的并将晶片锯切成小片,每个这样的小片包含一个有源区,该方法包含:
(a)使所述第一表面与第一条带状元件接触,所述第一条带状元件的一侧面具有与锯切通道相对应并对齐的粘胶图形,该粘胶图形沿通道粘附于第一表面以便由粘胶图形部分为界的无粘胶包含部分复盖并粘封所述有源区,使所述有源区相对于其上的污染物的入口呈密封状态;
(b)沿通过第一元件的通道锯切晶片成小片并将第一元件锯切成粘附于小片的片段;和
(c)对粘胶进行处理使片段脱离小片。
2、如权利要求1所述的方法,其特征在于,所述粘胶是通过第一元件的片段进行处理使片段脱离小片。
3、如权利要求2所述的方法,其特征在于,所述第一元件和它的片段能透射紫外线且当受到紫外线曝光时粘胶失去其粘性。
4、如权利要求3所述的方法,其特征在于,所述方法进一步可包含:
在粘胶已曝光于紫外线后将小片与第一元件的片段分离。
5、如权利要求1所述的方法,其特征在于,所述方法可进一步包含:
(d)在步骤(a)之前,将涂有粘胶层的第二条带状元件粘附于与第一表面相反的晶片的第二表面;和
(e)在步骤(b)之后,对第二元件上的粘胶进行处理使之脱离小片。
6、如权利要求5所述的方法,其特征在于:在步骤(b)期间将第二元件锯切成片段。
7、如权利要求5所述的方法,其特征在于,实施步骤(b)以便使晶片整体上不被完全锯切且第二元件不被锯切成片段。
8、如权利要求7所述的方法,其特征在于,在步骤(c)和(e)之前,通过沿整体上部分锯切的通道将其弯曲使部分锯切的晶片破裂成小片,通过第二元件使小片箝位在它们原有关系的相对的定位中。
9、如权利要求5所述的方法,其特征在于,通过第一和第二元件对粘胶进行处理使片段脱离小片。
10、如权利要求9所述的方法,其特征在于,第一和第二元件和它们的片段能被紫外线透射,且当曝光于紫外线中时粘胶失去它们的粘性。
11、如权利要求10所述的方法,其特征在于,所述方法进一步包含:在粘胶已曝光于紫外线之后,将小片与第一和第二元件的片段分开。
12、如权利要求4或11所述的方法,其特征在于,分离小片与片段是通过将负压加给其一或二者进行的。
13、如权利要求12所述的方法,其特征在于,每个有源区包括一可形变的梁,该梁可设定一个位置,在这位置中它调制入射光,而在其它位置上它不调制入射光。
14、一种保护先前制作在充分处理过的半导体晶片的第一表面上的有源区使之不受由锯切产生和锯切中使用的粒子和液体污染物的危害的装置,其中锯切晶片是沿着有源区之间的锯切通道进行的并将晶片锯切成小片,每个这样的小片包含一个有源区,该装置包含:
在其一侧面具有一粘胶图形的第一条带状元件,该粘胶图形与锯切通道相对应并与之对齐,该粘胶图形适用于沿通道粘附于第一表面以便由粘胶图形部分限定的无粘胶包含部分复盖并粘封所述有源区,使所述有源区相对于其上的污染物的入口呈密封状态,该粘胶最后可被处理以便失去其粘性,
由此沿通过粘附其第一元件的通道锯切晶片将晶片分成小片并将第一元件分成片段。
15、如权利要求14所述的装置,其特征在于,所述粘胶和元件是这样的,以致粘胶可通过第一元件的片段进行处理使片段脱离所述小片。
16、如权利要求15所述的装置,其特征在于,第一元件和它的片段能被紫外线透射且当曝光于紫外线中时粘胶失去其粘性。
17、如权利要求14所述的装置,其特征在于,所述装置进一步可包含:
用粘胶层涂复的一第二条带状元件,该层适用于粘附到与第一表面相反的晶体的第二表面上,其粘胶可被处理失去其粘性。
18、如权利要求17所述的装置,其特征在于,当锯切晶片时,第二元件适合于被锯切成片段。
19、如权利要求17所述的装置,其特征在于,如果晶片仅整体上部分被切,则第二元件适用于保留整体。
20、如权利要求19所述的装置,其特征在于,如果该部分被切晶片破成小片,则第二元件适用于将各小片箝位在它们原有的相对的定位中。
21、如权利要求17所述的装置,其特征在于,粘胶可通过第一和第二片段进行处理以使这些片段脱离各小片。
22、如权利要求21所述的装置,其特征在于,第一和第二元件及它们的片段能被紫外线透射且当曝光于紫外线中时粘胶失去它们的粘性。
23、如权利要求22所述的装置,其特征在于,各小片与第一和第二各片段在粘胶已曝光于紫外线之后可被分离。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/038,779 | 1993-03-29 | ||
US08/038,779 US5435876A (en) | 1993-03-29 | 1993-03-29 | Grid array masking tape process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1100563A true CN1100563A (zh) | 1995-03-22 |
CN1043594C CN1043594C (zh) | 1999-06-09 |
Family
ID=21901848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN94103180A Expired - Fee Related CN1043594C (zh) | 1993-03-29 | 1994-03-29 | 锯切半导体晶片时保护其上的有源区的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5435876A (zh) |
EP (1) | EP0661737B1 (zh) |
JP (1) | JPH0799172A (zh) |
KR (1) | KR100284019B1 (zh) |
CN (1) | CN1043594C (zh) |
CA (1) | CA2119505A1 (zh) |
DE (1) | DE69419489T2 (zh) |
TW (1) | TW249298B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100361273C (zh) * | 2003-03-12 | 2008-01-09 | 日东电工株式会社 | 紫外线照射方法和使用该方法的装置 |
CN105633281A (zh) * | 2016-01-06 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其封装方法、显示装置 |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6219015B1 (en) | 1992-04-28 | 2001-04-17 | The Board Of Directors Of The Leland Stanford, Junior University | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
US5597767A (en) * | 1995-01-06 | 1997-01-28 | Texas Instruments Incorporated | Separation of wafer into die with wafer-level processing |
US5841579A (en) | 1995-06-07 | 1998-11-24 | Silicon Light Machines | Flat diffraction grating light valve |
JP3496347B2 (ja) * | 1995-07-13 | 2004-02-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
US5668062A (en) * | 1995-08-23 | 1997-09-16 | Texas Instruments Incorporated | Method for processing semiconductor wafer with reduced particle contamination during saw |
US5872046A (en) * | 1996-04-10 | 1999-02-16 | Texas Instruments Incorporated | Method of cleaning wafer after partial saw |
US6686291B1 (en) | 1996-05-24 | 2004-02-03 | Texas Instruments Incorporated | Undercut process with isotropic plasma etching at package level |
JPH1027971A (ja) * | 1996-07-10 | 1998-01-27 | Nec Corp | 有機薄膜多層配線基板の切断方法 |
WO1998007190A1 (de) * | 1996-08-14 | 1998-02-19 | Siemens Aktiengesellschaft | Verfahren zum trennen einer halbleiterscheibe |
JP3584635B2 (ja) | 1996-10-04 | 2004-11-04 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP3695494B2 (ja) | 1996-11-13 | 2005-09-14 | セイコーエプソン株式会社 | 光変調デバイス、その製造方法および表示装置 |
EP1014142B1 (en) * | 1996-11-13 | 2002-09-25 | Seiko Epson Corporation | Method of producing light modulation device and projector |
US5982553A (en) | 1997-03-20 | 1999-11-09 | Silicon Light Machines | Display device incorporating one-dimensional grating light-valve array |
US5817569A (en) * | 1997-05-08 | 1998-10-06 | Texas Instruments Incorporated | Method of reducing wafer particles after partial saw |
US5753563A (en) * | 1997-07-30 | 1998-05-19 | Chartered Semiconductor Manufacturing Ltd. | Method of removing particles by adhesive |
KR19990017672A (ko) * | 1997-08-25 | 1999-03-15 | 윤종용 | 반도체 칩 패키지 제조 방법 |
JP3097619B2 (ja) * | 1997-10-02 | 2000-10-10 | 日本電気株式会社 | 電界放射冷陰極の製造方法 |
US6088102A (en) | 1997-10-31 | 2000-07-11 | Silicon Light Machines | Display apparatus including grating light-valve array and interferometric optical system |
JP3846094B2 (ja) | 1998-03-17 | 2006-11-15 | 株式会社デンソー | 半導体装置の製造方法 |
US6319075B1 (en) * | 1998-04-17 | 2001-11-20 | Fci Americas Technology, Inc. | Power connector |
US7314377B2 (en) | 1998-04-17 | 2008-01-01 | Fci Americas Technology, Inc. | Electrical power connector |
US20020098743A1 (en) * | 1998-04-17 | 2002-07-25 | Schell Mark S. | Power connector |
US6271808B1 (en) | 1998-06-05 | 2001-08-07 | Silicon Light Machines | Stereo head mounted display using a single display device |
US6130770A (en) | 1998-06-23 | 2000-10-10 | Silicon Light Machines | Electron gun activated grating light valve |
US6101036A (en) | 1998-06-23 | 2000-08-08 | Silicon Light Machines | Embossed diffraction grating alone and in combination with changeable image display |
US6215579B1 (en) | 1998-06-24 | 2001-04-10 | Silicon Light Machines | Method and apparatus for modulating an incident light beam for forming a two-dimensional image |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
JP3661444B2 (ja) * | 1998-10-28 | 2005-06-15 | 株式会社ルネサステクノロジ | 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法 |
JP2000223446A (ja) | 1998-11-27 | 2000-08-11 | Denso Corp | 半導体装置およびその製造方法 |
DE19906209C2 (de) * | 1999-02-15 | 2003-03-20 | Possehl Electronic Gmbh | Verfahren zum Heraustrennen einzelner Schaltkreis-Einheiten aus einem Panel |
JP4151164B2 (ja) * | 1999-03-19 | 2008-09-17 | 株式会社デンソー | 半導体装置の製造方法 |
US6413150B1 (en) * | 1999-05-27 | 2002-07-02 | Texas Instruments Incorporated | Dual dicing saw blade assembly and process for separating devices arrayed a substrate |
JP3303294B2 (ja) * | 1999-06-11 | 2002-07-15 | 株式会社東京精密 | 半導体保護テープの切断方法 |
DE19962231A1 (de) * | 1999-12-22 | 2001-07-12 | Infineon Technologies Ag | Verfahren zur Herstellung mikromechanischer Strukturen |
US6425971B1 (en) * | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
KR100332967B1 (ko) * | 2000-05-10 | 2002-04-19 | 윤종용 | 디지털 마이크로-미러 디바이스 패키지의 제조 방법 |
US6335224B1 (en) | 2000-05-16 | 2002-01-01 | Sandia Corporation | Protection of microelectronic devices during packaging |
US6383833B1 (en) | 2000-05-23 | 2002-05-07 | Silverbrook Research Pty Ltd. | Method of fabricating devices incorporating microelectromechanical systems using at least one UV curable tape |
DE60032521T2 (de) | 2000-05-24 | 2007-11-22 | Silverbrook Research Pty. Ltd., Balmain | Verfahren zur herstellung von mikroelektromechanische vorrichtungen enthaltenden bauelementen durch verwendung von wenigstens einem uv-härtbaren band |
SG143050A1 (en) * | 2000-05-24 | 2008-06-27 | Silverbrook Res Pty Ltd | Method of fabricating micro-electromechanical devices with protective structures |
JP4258105B2 (ja) | 2000-06-27 | 2009-04-30 | 株式会社デンソー | 半導体装置の製造方法 |
US7022546B2 (en) * | 2000-12-05 | 2006-04-04 | Analog Devices, Inc. | Method and device for protecting micro electromechanical systems structures during dicing of a wafer |
US6572944B1 (en) | 2001-01-16 | 2003-06-03 | Amkor Technology, Inc. | Structure for fabricating a special-purpose die using a polymerizable tape |
US6610167B1 (en) * | 2001-01-16 | 2003-08-26 | Amkor Technology, Inc. | Method for fabricating a special-purpose die using a polymerizable tape |
US6420206B1 (en) * | 2001-01-30 | 2002-07-16 | Axsun Technologies, Inc. | Optical membrane singulation process utilizing backside and frontside protective coating during die saw |
US6580153B1 (en) * | 2001-03-14 | 2003-06-17 | Amkor Technology, Inc. | Structure for protecting a micromachine with a cavity in a UV tape |
US6707591B2 (en) | 2001-04-10 | 2004-03-16 | Silicon Light Machines | Angled illumination for a single order light modulator based projection system |
US6982184B2 (en) | 2001-05-02 | 2006-01-03 | Silverbrook Research Pty Ltd | Method of fabricating MEMS devices on a silicon wafer |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
DE10137666A1 (de) * | 2001-08-01 | 2003-02-27 | Infineon Technologies Ag | Schutzvorrichtung für Baugruppen und Verfahren zu ihrer Herstellung |
US6829092B2 (en) | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US6908791B2 (en) * | 2002-04-29 | 2005-06-21 | Texas Instruments Incorporated | MEMS device wafer-level package |
CN1287653C (zh) * | 2002-05-24 | 2006-11-29 | 皇家飞利浦电子股份有限公司 | 用于将器件从载体传送到衬底的方法和设备 |
US6728023B1 (en) | 2002-05-28 | 2004-04-27 | Silicon Light Machines | Optical device arrays with optimized image resolution |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6829258B1 (en) | 2002-06-26 | 2004-12-07 | Silicon Light Machines, Inc. | Rapidly tunable external cavity laser |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US20040036378A1 (en) * | 2002-08-20 | 2004-02-26 | Rodgers Murray Steven | Dust cover for MEM components |
US6700173B1 (en) | 2002-08-20 | 2004-03-02 | Memx, Inc. | Electrically isolated support for overlying MEM structure |
US6875257B2 (en) * | 2002-08-20 | 2005-04-05 | Memx, Inc. | Particle filter for microelectromechanical systems |
US6703675B1 (en) | 2002-08-20 | 2004-03-09 | Memx, Inc. | Particle filter for partially enclosed microelectromechanical systems |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
US20040147169A1 (en) | 2003-01-28 | 2004-07-29 | Allison Jeffrey W. | Power connector with safety feature |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
US7376215B2 (en) * | 2005-12-27 | 2008-05-20 | Honeywell International Inc. | Measurement of ash composition using scanning high voltage X-ray sensor |
US7297567B2 (en) * | 2006-01-10 | 2007-11-20 | Knowles Electronics, Llc. | Method for singulating a released microelectromechanical system wafer |
US8323049B2 (en) | 2009-01-30 | 2012-12-04 | Fci Americas Technology Llc | Electrical connector having power contacts |
USD619099S1 (en) | 2009-01-30 | 2010-07-06 | Fci Americas Technology, Inc. | Electrical connector |
US8987632B2 (en) * | 2009-10-09 | 2015-03-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Modification of surface energy via direct laser ablative surface patterning |
US9278374B2 (en) | 2012-06-08 | 2016-03-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Modified surface having low adhesion properties to mitigate insect residue adhesion |
JP6765949B2 (ja) * | 2016-12-12 | 2020-10-07 | 株式会社ディスコ | ウェーハの加工方法 |
TWI722172B (zh) * | 2017-04-20 | 2021-03-21 | 矽品精密工業股份有限公司 | 切割方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1481711A (fr) * | 1965-06-02 | 1967-05-19 | Nippon Electric Co | Dispositif pour briser une masse semi-conductrice en morceaux élémentaires |
DE2946726C2 (de) * | 1979-11-20 | 1982-05-19 | Ruwel-Werke Spezialfabrik für Leiterplatten GmbH, 4170 Geldern | Leiterplatte mit starren und flexiblen Bereichen und Verfahren zu deren Herstellung |
US4961804A (en) * | 1983-08-03 | 1990-10-09 | Investment Holding Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same |
US4897141A (en) * | 1984-12-06 | 1990-01-30 | Valtech Corporation | Method for preparing semiconductor wafers |
JPS61180442A (ja) * | 1985-02-05 | 1986-08-13 | Toshiba Corp | 半導体装置の製造方法 |
DE3671577D1 (de) * | 1985-02-14 | 1990-06-28 | Bando Chemical Ind | Verfahren zum schneiden einer halbleiterscheibe in wuerfel. |
US5187007A (en) * | 1985-12-27 | 1993-02-16 | Lintec Corporation | Adhesive sheets |
US4793883A (en) * | 1986-07-14 | 1988-12-27 | National Starch And Chemical Corporation | Method of bonding a semiconductor chip to a substrate |
JPH01143211A (ja) * | 1987-11-27 | 1989-06-05 | Takatori Haitetsuku:Kk | ウエハーに対する保護テープの貼付け切り抜き方法および装置 |
JPH0715087B2 (ja) * | 1988-07-21 | 1995-02-22 | リンテック株式会社 | 粘接着テープおよびその使用方法 |
JPH03135048A (ja) * | 1989-10-20 | 1991-06-10 | Fujitsu Ltd | 半導体装置の製造方法 |
CA2031776A1 (en) * | 1989-12-08 | 1991-06-09 | Masanori Nishiguchi | Pickup method and the pickup apparatus for chip-type part |
US5006202A (en) * | 1990-06-04 | 1991-04-09 | Xerox Corporation | Fabricating method for silicon devices using a two step silicon etching process |
-
1993
- 1993-03-29 US US08/038,779 patent/US5435876A/en not_active Expired - Lifetime
-
1994
- 1994-03-21 CA CA002119505A patent/CA2119505A1/en not_active Abandoned
- 1994-03-29 CN CN94103180A patent/CN1043594C/zh not_active Expired - Fee Related
- 1994-03-29 JP JP6059234A patent/JPH0799172A/ja active Pending
- 1994-03-29 EP EP94104949A patent/EP0661737B1/en not_active Expired - Lifetime
- 1994-03-29 DE DE69419489T patent/DE69419489T2/de not_active Expired - Fee Related
- 1994-03-29 KR KR1019940006353A patent/KR100284019B1/ko not_active IP Right Cessation
- 1994-06-08 TW TW083105191A patent/TW249298B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100361273C (zh) * | 2003-03-12 | 2008-01-09 | 日东电工株式会社 | 紫外线照射方法和使用该方法的装置 |
CN105633281A (zh) * | 2016-01-06 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其封装方法、显示装置 |
CN105633281B (zh) * | 2016-01-06 | 2018-07-17 | 京东方科技集团股份有限公司 | 一种柔性显示面板及其封装方法、显示装置 |
US10109810B2 (en) | 2016-01-06 | 2018-10-23 | Boe Technology Group Co., Ltd. | Flexible display panel, package method thereof and display device |
Also Published As
Publication number | Publication date |
---|---|
KR100284019B1 (ko) | 2001-11-30 |
TW249298B (zh) | 1995-06-11 |
DE69419489D1 (de) | 1999-08-19 |
EP0661737A1 (en) | 1995-07-05 |
CA2119505A1 (en) | 1994-09-30 |
JPH0799172A (ja) | 1995-04-11 |
CN1043594C (zh) | 1999-06-09 |
KR940022721A (ko) | 1994-10-21 |
EP0661737B1 (en) | 1999-07-14 |
DE69419489T2 (de) | 2000-01-13 |
US5435876A (en) | 1995-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1043594C (zh) | 锯切半导体晶片时保护其上的有源区的方法 | |
US6099132A (en) | Manufacture method for micromechanical devices | |
US4596992A (en) | Linear spatial light modulator and printer | |
US5972154A (en) | Methods of dicing flat workpieces | |
US6844959B2 (en) | Spatial light modulators with light absorbing areas | |
JP3895768B2 (ja) | シリコンセグメントのための垂直相互接続方法 | |
EP0769817A2 (en) | Method of fixing photoelectric semiconductor devices on a base | |
US6352935B1 (en) | Method of forming a cover cap for semiconductor wafer devices | |
EP0855613A3 (en) | Liquid crystal display device | |
CN1518072A (zh) | 切割晶片的方法 | |
US6542282B2 (en) | Post metal etch clean process using soft mask | |
EP0853254A3 (en) | Liquid crystal display | |
US6610167B1 (en) | Method for fabricating a special-purpose die using a polymerizable tape | |
CN1093986C (zh) | 光电变换元件的安装装置及其制造方法 | |
JP2002305199A (ja) | 配線方法及び構造 | |
EP0424062A2 (en) | Process for assembling smaller scanning or printing arrays together to form a longer array | |
CN215988809U (zh) | 晶圆激光剥离装置 | |
US5668062A (en) | Method for processing semiconductor wafer with reduced particle contamination during saw | |
JP2007150038A (ja) | 光学半導体装置及びその製造方法 | |
US20200231434A1 (en) | Singulation of wafer level packaging | |
US7307773B2 (en) | Micro-optoelectromechanical system packages for a light modulator and methods of making the same | |
CN113782650A (zh) | 晶圆激光剥离装置及方法 | |
US5707785A (en) | Spacers for liquid crystal displays | |
KR100267469B1 (ko) | 박막형광로조절장치의제조방법 | |
JP2004213009A (ja) | 硬化方法及び装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 19990609 |