KR100269413B1 - 열처리장치 - Google Patents

열처리장치 Download PDF

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Publication number
KR100269413B1
KR100269413B1 KR1019940033374A KR19940033374A KR100269413B1 KR 100269413 B1 KR100269413 B1 KR 100269413B1 KR 1019940033374 A KR1019940033374 A KR 1019940033374A KR 19940033374 A KR19940033374 A KR 19940033374A KR 100269413 B1 KR100269413 B1 KR 100269413B1
Authority
KR
South Korea
Prior art keywords
heat treatment
holder
filter
wafer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940033374A
Other languages
English (en)
Korean (ko)
Other versions
KR950021004A (ko
Inventor
다카시 다나하시
Original Assignee
히가시 데쓰로
동경 엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34142593A external-priority patent/JP3402713B2/ja
Priority claimed from JP6037889A external-priority patent/JPH07226382A/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 히가시 데쓰로
Publication of KR950021004A publication Critical patent/KR950021004A/ko
Application granted granted Critical
Publication of KR100269413B1 publication Critical patent/KR100269413B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1019940033374A 1993-12-10 1994-12-09 열처리장치 Expired - Fee Related KR100269413B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34142593A JP3402713B2 (ja) 1993-12-10 1993-12-10 熱処理装置
JP93-341425 1993-12-10
JP94-37889 1994-02-10
JP6037889A JPH07226382A (ja) 1994-02-10 1994-02-10 熱処理装置

Publications (2)

Publication Number Publication Date
KR950021004A KR950021004A (ko) 1995-07-26
KR100269413B1 true KR100269413B1 (ko) 2000-11-01

Family

ID=26377048

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940033374A Expired - Fee Related KR100269413B1 (ko) 1993-12-10 1994-12-09 열처리장치

Country Status (3)

Country Link
US (1) US5551984A (https=)
KR (1) KR100269413B1 (https=)
TW (1) TW273574B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376739B1 (ko) 2012-06-22 2014-03-26 (주) 예스티 청정도가 향상된 가압 열처리장치

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JPH08186081A (ja) * 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
JPH0945597A (ja) * 1995-05-25 1997-02-14 Kokusai Electric Co Ltd 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
JPH0969557A (ja) * 1995-08-30 1997-03-11 Shin Etsu Handotai Co Ltd ウエーハの保管／輸送方法
KR100219406B1 (ko) * 1996-04-04 1999-09-01 윤종용 화학기상증착설비의 웨이퍼로딩실 공기흐름 안내장치
JP3155487B2 (ja) * 1997-02-12 2001-04-09 株式会社日立国際電気 ウェット酸化装置およびウェット酸化方法
JP3425592B2 (ja) * 1997-08-12 2003-07-14 東京エレクトロン株式会社 処理装置
JPH11251207A (ja) * 1998-03-03 1999-09-17 Canon Inc Ｓｏｉ基板及びその製造方法並びにその製造設備
US6309438B1 (en) * 1998-11-16 2001-10-30 Mine Safety Appliances Company Filter unit and dust-proof mask therewith
EP1143047B1 (en) * 1999-09-29 2015-11-04 Shin-Etsu Handotai Co., Ltd. Method of manufacturing silicon wafer
JP3998386B2 (ja) * 2000-01-26 2007-10-24 三菱電機株式会社 液晶表示装置の製造装置および液晶表示装置の製造方法
JP4100466B2 (ja) * 2000-12-25 2008-06-11 東京エレクトロン株式会社 液処理装置
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7118780B2 (en) * 2001-03-16 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Heat treatment method
JP4718700B2 (ja) * 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
JP3990881B2 (ja) * 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
KR100706790B1 (ko) * 2005-12-01 2007-04-12 삼성전자주식회사 산화 처리 장치 및 방법
WO2007122203A2 (en) * 2006-04-20 2007-11-01 Shell Erneuerbare Energien Gmbh Thermal evaporation apparatus, use and method of depositing a material
DE202009016200U1 (de) 2009-11-30 2010-03-04 BSH Bosch und Siemens Hausgeräte GmbH Filterelement für Dunstabzugshaube und Dunstabzugshaube
JP5796972B2 (ja) * 2010-06-14 2015-10-21 株式会社日立国際電気 基板処理装置
JP6082283B2 (ja) * 2012-05-30 2017-02-15 東京エレクトロン株式会社 筐体及びこれを含む基板処理装置
KR20210080633A (ko) 2014-11-25 2021-06-30 어플라이드 머티어리얼스, 인코포레이티드 기판 캐리어 및 퍼지 챔버 환경 제어들을 이용하는 기판 프로세싱 시스템들, 장치, 및 방법들
CN111463118B (zh) 2015-01-21 2024-04-30 株式会社国际电气 基板处理装置、半导体器件的制造方法及基板处理方法
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
KR102453149B1 (ko) * 2015-07-09 2022-10-12 삼성전자주식회사 퍼니스형 반도체 장치, 이의 세정 방법 및 이를 이용한 박막 형성 방법
JP6441244B2 (ja) 2016-02-02 2018-12-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置
JP6600408B2 (ja) * 2016-03-24 2019-10-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11694907B2 (en) * 2016-08-04 2023-07-04 Kokusai Electric Corporation Substrate processing apparatus, recording medium, and fluid circulation mechanism
CN111074237A (zh) * 2018-10-18 2020-04-28 君泰创新（北京）科技有限公司 源瓶
KR102388390B1 (ko) * 2020-01-06 2022-04-21 세메스 주식회사 로드 포트 유닛, 이를 포함하는 저장 장치 및 배기 방법
JP7563844B2 (ja) * 2020-11-06 2024-10-08 東京エレクトロン株式会社 熱処理装置及びダミー基板の処理方法
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376739B1 (ko) 2012-06-22 2014-03-26 (주) 예스티 청정도가 향상된 가압 열처리장치

Also Published As

Publication number Publication date
US5551984A (en) 1996-09-03
TW273574B (https=) 1996-04-01
KR950021004A (ko) 1995-07-26

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