KR100264833B1 - 엠오에스 트랜지스터 및 이것을 사용한 전하검출장치 - Google Patents

엠오에스 트랜지스터 및 이것을 사용한 전하검출장치 Download PDF

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Publication number
KR100264833B1
KR100264833B1 KR1019920018165A KR920018165A KR100264833B1 KR 100264833 B1 KR100264833 B1 KR 100264833B1 KR 1019920018165 A KR1019920018165 A KR 1019920018165A KR 920018165 A KR920018165 A KR 920018165A KR 100264833 B1 KR100264833 B1 KR 100264833B1
Authority
KR
South Korea
Prior art keywords
mos transistor
polysilicon
channel
charge detection
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920018165A
Other languages
English (en)
Korean (ko)
Other versions
KR930009097A (ko
Inventor
요시노리 구노
마사히데 히라마
Original Assignee
이데이 노부유끼
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시키가이샤 filed Critical 이데이 노부유끼
Publication of KR930009097A publication Critical patent/KR930009097A/ko
Application granted granted Critical
Publication of KR100264833B1 publication Critical patent/KR100264833B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019920018165A 1991-10-08 1992-10-05 엠오에스 트랜지스터 및 이것을 사용한 전하검출장치 Expired - Fee Related KR100264833B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29084491A JP3189327B2 (ja) 1991-10-08 1991-10-08 電荷検出装置
JP91-290,844 1991-10-08

Publications (2)

Publication Number Publication Date
KR930009097A KR930009097A (ko) 1993-05-22
KR100264833B1 true KR100264833B1 (ko) 2000-10-02

Family

ID=17761217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920018165A Expired - Fee Related KR100264833B1 (ko) 1991-10-08 1992-10-05 엠오에스 트랜지스터 및 이것을 사용한 전하검출장치

Country Status (5)

Country Link
US (1) US5945697A (https=)
EP (1) EP0536688B1 (https=)
JP (1) JP3189327B2 (https=)
KR (1) KR100264833B1 (https=)
DE (1) DE69224255T2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637306A (ja) * 1992-07-20 1994-02-10 Kawasaki Steel Corp 半導体装置
JP3139465B2 (ja) * 1998-08-27 2001-02-26 日本電気株式会社 固体撮像装置
JP3970623B2 (ja) * 2001-02-28 2007-09-05 シャープ株式会社 可変利得増幅器
KR20030094955A (ko) * 2002-06-11 2003-12-18 김석희 광고간판
JP4602889B2 (ja) * 2005-10-03 2010-12-22 シャープ株式会社 増幅型固体撮像装置
JP4862402B2 (ja) * 2006-01-18 2012-01-25 株式会社ニコン 固体撮像素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPH01191469A (ja) * 1988-01-27 1989-08-01 Toshiba Corp 電荷結合装置
EP0361121A2 (en) * 1988-08-31 1990-04-04 Kabushiki Kaisha Toshiba Semiconductor IC device with improved element isolating scheme

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
JPS5387679A (en) * 1977-01-12 1978-08-02 Nec Corp Semiconductor integrated circuit device
JPS53142882A (en) * 1977-05-19 1978-12-12 Toshiba Corp Charge transfer unit
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
JPS566474A (en) * 1979-06-27 1981-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
NL8302731A (nl) * 1983-08-02 1985-03-01 Philips Nv Halfgeleiderinrichting.
US4603426A (en) * 1985-04-04 1986-07-29 Rca Corporation Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage
JPS61281554A (ja) * 1985-06-07 1986-12-11 Fujitsu Ltd Ｍｉｓ型半導体装置
US4931850A (en) * 1985-07-05 1990-06-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device including a channel stop region
JPS6362265A (ja) * 1986-09-03 1988-03-18 Toshiba Corp 固体撮像装置の出力回路
JPH0716004B2 (ja) * 1988-03-22 1995-02-22 日本電気株式会社 半導体入力保護素子
JPH0770724B2 (ja) * 1988-12-08 1995-07-31 三菱電機株式会社 半導体装置
JPH079989B2 (ja) * 1988-12-15 1995-02-01 株式会社東芝 差動増幅回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPH01191469A (ja) * 1988-01-27 1989-08-01 Toshiba Corp 電荷結合装置
EP0361121A2 (en) * 1988-08-31 1990-04-04 Kabushiki Kaisha Toshiba Semiconductor IC device with improved element isolating scheme

Also Published As

Publication number Publication date
EP0536688B1 (en) 1998-01-28
US5945697A (en) 1999-08-31
DE69224255T2 (de) 1998-08-27
DE69224255D1 (de) 1998-03-05
JPH05102458A (ja) 1993-04-23
JP3189327B2 (ja) 2001-07-16
EP0536688A2 (en) 1993-04-14
KR930009097A (ko) 1993-05-22
EP0536688A3 (https=) 1994-04-20

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