DE69224255D1 - MOS-Transistor und Ladungsdetektor unter Verwendung desselben - Google Patents

MOS-Transistor und Ladungsdetektor unter Verwendung desselben

Info

Publication number
DE69224255D1
DE69224255D1 DE69224255T DE69224255T DE69224255D1 DE 69224255 D1 DE69224255 D1 DE 69224255D1 DE 69224255 T DE69224255 T DE 69224255T DE 69224255 T DE69224255 T DE 69224255T DE 69224255 D1 DE69224255 D1 DE 69224255D1
Authority
DE
Germany
Prior art keywords
same
mos transistor
charge detector
detector
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69224255T
Other languages
English (en)
Other versions
DE69224255T2 (de
Inventor
Yoshinori Kuno
Masahide Hirama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69224255D1 publication Critical patent/DE69224255D1/de
Publication of DE69224255T2 publication Critical patent/DE69224255T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
DE69224255T 1991-10-08 1992-10-06 MOS-Transistor und Ladungsdetektor unter Verwendung desselben Expired - Lifetime DE69224255T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29084491A JP3189327B2 (ja) 1991-10-08 1991-10-08 電荷検出装置

Publications (2)

Publication Number Publication Date
DE69224255D1 true DE69224255D1 (de) 1998-03-05
DE69224255T2 DE69224255T2 (de) 1998-08-27

Family

ID=17761217

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224255T Expired - Lifetime DE69224255T2 (de) 1991-10-08 1992-10-06 MOS-Transistor und Ladungsdetektor unter Verwendung desselben

Country Status (5)

Country Link
US (1) US5945697A (de)
EP (1) EP0536688B1 (de)
JP (1) JP3189327B2 (de)
KR (1) KR100264833B1 (de)
DE (1) DE69224255T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637306A (ja) * 1992-07-20 1994-02-10 Kawasaki Steel Corp 半導体装置
JP3139465B2 (ja) * 1998-08-27 2001-02-26 日本電気株式会社 固体撮像装置
JP3970623B2 (ja) * 2001-02-28 2007-09-05 シャープ株式会社 可変利得増幅器
KR20030094955A (ko) * 2002-06-11 2003-12-18 김석희 광고간판
JP4602889B2 (ja) * 2005-10-03 2010-12-22 シャープ株式会社 増幅型固体撮像装置
JP4862402B2 (ja) * 2006-01-18 2012-01-25 株式会社ニコン 固体撮像素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
JPS5387679A (en) * 1977-01-12 1978-08-02 Nec Corp Semiconductor integrated circuit device
JPS53142882A (en) * 1977-05-19 1978-12-12 Toshiba Corp Charge transfer unit
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
JPS566474A (en) * 1979-06-27 1981-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
NL8302731A (nl) * 1983-08-02 1985-03-01 Philips Nv Halfgeleiderinrichting.
US4603426A (en) * 1985-04-04 1986-07-29 Rca Corporation Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage
JPS61281554A (ja) * 1985-06-07 1986-12-11 Fujitsu Ltd Ｍｉｓ型半導体装置
US4931850A (en) * 1985-07-05 1990-06-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device including a channel stop region
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPS6362265A (ja) * 1986-09-03 1988-03-18 Toshiba Corp 固体撮像装置の出力回路
JPH01191469A (ja) * 1988-01-27 1989-08-01 Toshiba Corp 電荷結合装置
JPH0716004B2 (ja) * 1988-03-22 1995-02-22 日本電気株式会社 半導体入力保護素子
JPH0265254A (ja) * 1988-08-31 1990-03-05 Toshiba Corp 半導体装置
JPH0770724B2 (ja) * 1988-12-08 1995-07-31 三菱電機株式会社 半導体装置
JPH079989B2 (ja) * 1988-12-15 1995-02-01 株式会社東芝 差動増幅回路

Also Published As

Publication number Publication date
DE69224255T2 (de) 1998-08-27
US5945697A (en) 1999-08-31
JPH05102458A (ja) 1993-04-23
KR100264833B1 (ko) 2000-10-02
EP0536688B1 (de) 1998-01-28
JP3189327B2 (ja) 2001-07-16
KR930009097A (ko) 1993-05-22
EP0536688A3 (de) 1994-04-20
EP0536688A2 (de) 1993-04-14

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