JPS53142882A - Charge transfer unit - Google Patents

Charge transfer unit

Info

Publication number
JPS53142882A
JPS53142882A JP5709377A JP5709377A JPS53142882A JP S53142882 A JPS53142882 A JP S53142882A JP 5709377 A JP5709377 A JP 5709377A JP 5709377 A JP5709377 A JP 5709377A JP S53142882 A JPS53142882 A JP S53142882A
Authority
JP
Japan
Prior art keywords
transfer unit
charge transfer
mosfet
absorbing
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5709377A
Other languages
Japanese (ja)
Inventor
Nozomi Harada
Tetsuo Yamada
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5709377A priority Critical patent/JPS53142882A/en
Publication of JPS53142882A publication Critical patent/JPS53142882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To perfectly perform the separation from other parts, by absorbing the carrier leaked to the substrate with protective ring, in operating a MOSFET with the application of a high drain voltage.
JP5709377A 1977-05-19 1977-05-19 Charge transfer unit Pending JPS53142882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5709377A JPS53142882A (en) 1977-05-19 1977-05-19 Charge transfer unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5709377A JPS53142882A (en) 1977-05-19 1977-05-19 Charge transfer unit

Publications (1)

Publication Number Publication Date
JPS53142882A true JPS53142882A (en) 1978-12-12

Family

ID=13045879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5709377A Pending JPS53142882A (en) 1977-05-19 1977-05-19 Charge transfer unit

Country Status (1)

Country Link
JP (1) JPS53142882A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815270A (en) * 1981-07-21 1983-01-28 Nec Corp Charge transfer device
EP0536688A2 (en) * 1991-10-08 1993-04-14 Sony Corporation MOS transistor and charge detector using same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815270A (en) * 1981-07-21 1983-01-28 Nec Corp Charge transfer device
JPH0421339B2 (en) * 1981-07-21 1992-04-09 Nippon Electric Co
EP0536688A2 (en) * 1991-10-08 1993-04-14 Sony Corporation MOS transistor and charge detector using same
EP0536688A3 (en) * 1991-10-08 1994-04-20 Sony Corp

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