KR100262400B1 - 반도체 소자의 평탄화방법 - Google Patents
반도체 소자의 평탄화방법 Download PDFInfo
- Publication number
- KR100262400B1 KR100262400B1 KR1019950042291A KR19950042291A KR100262400B1 KR 100262400 B1 KR100262400 B1 KR 100262400B1 KR 1019950042291 A KR1019950042291 A KR 1019950042291A KR 19950042291 A KR19950042291 A KR 19950042291A KR 100262400 B1 KR100262400 B1 KR 100262400B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- heat treatment
- bpsg
- bpsg film
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract description 49
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000011229 interlayer Substances 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 13
- 238000001556 precipitation Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950042291A KR100262400B1 (ko) | 1995-11-20 | 1995-11-20 | 반도체 소자의 평탄화방법 |
| DE19648082A DE19648082C2 (de) | 1995-11-20 | 1996-11-20 | Verfahren zur Einebnung einer Halbleitereinrichtung |
| JP8324638A JP2799858B2 (ja) | 1995-11-20 | 1996-11-20 | 半導体デバイスの平坦化方法 |
| CN96123330A CN1080928C (zh) | 1995-11-20 | 1996-11-20 | 半导体器件的平整方法 |
| GB9624132A GB2307344B (en) | 1995-11-20 | 1996-11-20 | Method for planarization of semiconductor device |
| TW085114291A TW442872B (en) | 1995-11-20 | 1996-11-20 | Method for planarization of semiconductor device |
| US09/065,982 US6169026B1 (en) | 1995-11-20 | 1998-04-24 | Method for planarization of semiconductor device including pumping out dopants from planarization layer separately from flowing said layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950042291A KR100262400B1 (ko) | 1995-11-20 | 1995-11-20 | 반도체 소자의 평탄화방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970030476A KR970030476A (ko) | 1997-06-26 |
| KR100262400B1 true KR100262400B1 (ko) | 2000-09-01 |
Family
ID=19434734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950042291A KR100262400B1 (ko) | 1995-11-20 | 1995-11-20 | 반도체 소자의 평탄화방법 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2799858B2 (de) |
| KR (1) | KR100262400B1 (de) |
| CN (1) | CN1080928C (de) |
| DE (1) | DE19648082C2 (de) |
| GB (1) | GB2307344B (de) |
| TW (1) | TW442872B (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100256232B1 (ko) * | 1997-06-30 | 2000-05-15 | 김영환 | 반도체소자의층간절연막형성방법 |
| JP3229276B2 (ja) * | 1998-12-04 | 2001-11-19 | キヤノン販売株式会社 | 成膜方法及び半導体装置の製造方法 |
| JP3824469B2 (ja) * | 2000-04-03 | 2006-09-20 | シャープ株式会社 | 固体撮像装置、及びその製造方法 |
| KR100506054B1 (ko) * | 2000-12-28 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US7226873B2 (en) * | 2004-11-22 | 2007-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of improving via filling uniformity in isolated and dense via-pattern regions |
| KR20120098095A (ko) * | 2011-02-28 | 2012-09-05 | 에스케이하이닉스 주식회사 | 반도체장치 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930011118A (ko) * | 1991-11-19 | 1993-06-23 | 정몽헌 | 표면결정성 석출물 발생방지를 위한 bpsg층 형성방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237744A (ja) * | 1990-02-14 | 1991-10-23 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JP2874972B2 (ja) * | 1990-07-11 | 1999-03-24 | 株式会社東芝 | 半導体装置の製造方法 |
| US5268333A (en) * | 1990-12-19 | 1993-12-07 | Samsung Electronics Co., Ltd. | Method of reflowing a semiconductor device |
| JP2538722B2 (ja) * | 1991-06-20 | 1996-10-02 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
-
1995
- 1995-11-20 KR KR1019950042291A patent/KR100262400B1/ko not_active IP Right Cessation
-
1996
- 1996-11-20 CN CN96123330A patent/CN1080928C/zh not_active Expired - Fee Related
- 1996-11-20 TW TW085114291A patent/TW442872B/zh not_active IP Right Cessation
- 1996-11-20 GB GB9624132A patent/GB2307344B/en not_active Expired - Fee Related
- 1996-11-20 JP JP8324638A patent/JP2799858B2/ja not_active Expired - Fee Related
- 1996-11-20 DE DE19648082A patent/DE19648082C2/de not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930011118A (ko) * | 1991-11-19 | 1993-06-23 | 정몽헌 | 표면결정성 석출물 발생방지를 위한 bpsg층 형성방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1080928C (zh) | 2002-03-13 |
| CN1159076A (zh) | 1997-09-10 |
| JP2799858B2 (ja) | 1998-09-21 |
| DE19648082C2 (de) | 2000-03-23 |
| TW442872B (en) | 2001-06-23 |
| GB2307344B (en) | 2000-05-17 |
| KR970030476A (ko) | 1997-06-26 |
| GB9624132D0 (en) | 1997-01-08 |
| GB2307344A (en) | 1997-05-21 |
| DE19648082A1 (de) | 1997-05-22 |
| JPH1092826A (ja) | 1998-04-10 |
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| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| B601 | Maintenance of original decision after re-examination before a trial | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19990106 Effective date: 19990930 |
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| S901 | Examination by remand of revocation | ||
| E902 | Notification of reason for refusal | ||
| GRNO | Decision to grant (after opposition) | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120424 Year of fee payment: 13 |
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| LAPS | Lapse due to unpaid annual fee |