KR100261986B1 - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR100261986B1
KR100261986B1 KR1019970065750A KR19970065750A KR100261986B1 KR 100261986 B1 KR100261986 B1 KR 100261986B1 KR 1019970065750 A KR1019970065750 A KR 1019970065750A KR 19970065750 A KR19970065750 A KR 19970065750A KR 100261986 B1 KR100261986 B1 KR 100261986B1
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KR
South Korea
Prior art keywords
opening
closing
substrate
processing chamber
conveying means
Prior art date
Application number
KR1019970065750A
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English (en)
Korean (ko)
Other versions
KR19980070132A (ko
Inventor
도시미 가츠라
유키오 소에지마
히데아키 미야자와
Original Assignee
코지마 겐이치
가부시키가이샤 플라즈마 시스템
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코지마 겐이치, 가부시키가이샤 플라즈마 시스템 filed Critical 코지마 겐이치
Publication of KR19980070132A publication Critical patent/KR19980070132A/ko
Application granted granted Critical
Publication of KR100261986B1 publication Critical patent/KR100261986B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019970065750A 1997-01-31 1997-12-04 플라즈마 처리장치 KR100261986B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-019488 1997-01-31
JP01948897A JP3215643B2 (ja) 1997-01-31 1997-01-31 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR19980070132A KR19980070132A (ko) 1998-10-26
KR100261986B1 true KR100261986B1 (ko) 2000-08-01

Family

ID=12000751

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970065750A KR100261986B1 (ko) 1997-01-31 1997-12-04 플라즈마 처리장치

Country Status (5)

Country Link
US (1) US6024800A (ja)
JP (1) JP3215643B2 (ja)
KR (1) KR100261986B1 (ja)
SG (1) SG66424A1 (ja)
TW (1) TW423044B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001205211A (ja) * 2000-01-28 2001-07-31 Sanyo Electric Co Ltd プラズマ洗浄装置
US20030029833A1 (en) * 2000-03-20 2003-02-13 Johnson Wayne L High speed photoresist stripping chamber
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus
US20040221811A1 (en) * 2001-11-30 2004-11-11 Robert Mitchell Method and apparatus for processing wafers
US7246985B2 (en) * 2004-04-16 2007-07-24 Axcelis Technologies, Inc. Work-piece processing system
US7680557B2 (en) * 2004-09-22 2010-03-16 Hantech Co., Ltd. System for processing semiconductor substrate by using laser and method of the same
US7467916B2 (en) * 2005-03-08 2008-12-23 Asm Japan K.K. Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
KR100821781B1 (ko) * 2005-08-05 2008-04-11 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 플라즈마 처리 장치
US7534080B2 (en) * 2005-08-26 2009-05-19 Ascentool, Inc. Vacuum processing and transfer system
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
KR100699539B1 (ko) * 2006-03-31 2007-03-23 세메스 주식회사 기판 처리 시스템 및 이를 이용한 기판 처리 방법
WO2008072997A1 (fr) * 2006-12-15 2008-06-19 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited Installation d'attaque au plasma de plaques semi-conductrices et/ou de formation de films diélectriques sur celles-ci
CN101740441B (zh) * 2008-11-04 2012-04-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种机械手调度方法、装置及等离子体处理设备
US20120288355A1 (en) * 2011-05-11 2012-11-15 Ming-Teng Hsieh Method for storing wafers
CN104008945B (zh) * 2013-02-22 2016-06-01 中微半导体设备(上海)有限公司 用于等离子体处理装置的基片制程方法
CN208240622U (zh) * 2015-05-22 2018-12-14 应用材料公司 用于装载及卸载基板的负载锁定腔室和直列基板处理系统
DE102017105374A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat sowie Verfahren zum Einrichten der Vorrichtung
DE102017105379A1 (de) 2017-03-14 2018-09-20 Aixtron Se Substrathalteranordnung mit Maskenträger
KR102552467B1 (ko) * 2020-10-15 2023-07-05 세메스 주식회사 다이 표면 처리 장치 및 이를 구비하는 다이 본딩 시스템

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
US5021138A (en) * 1985-01-17 1991-06-04 Babu Suryadevara V Side source center sink plasma reactor
JPS61168922A (ja) * 1985-01-17 1986-07-30 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション プラズマ・エツチング装置
JPS63204726A (ja) * 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
JPH0825151B2 (ja) * 1988-09-16 1996-03-13 東京応化工業株式会社 ハンドリングユニット
JP3466607B2 (ja) * 1989-09-13 2003-11-17 ソニー株式会社 スパッタリング装置
KR950010044B1 (ko) * 1990-06-27 1995-09-06 후지쓰 가부시끼가이샤 반도체 집적회로의 제조방법 및 그에 사용된 제조장치
KR0129582B1 (ko) * 1994-06-23 1998-04-06 김주용 다중 기판 전달 장치
JP3165348B2 (ja) * 1995-05-18 2001-05-14 ワイエイシイ株式会社 プラズマ処理装置およびその運転方法

Also Published As

Publication number Publication date
KR19980070132A (ko) 1998-10-26
US6024800A (en) 2000-02-15
JP3215643B2 (ja) 2001-10-09
TW423044B (en) 2001-02-21
SG66424A1 (en) 1999-07-20
JPH10219455A (ja) 1998-08-18

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