KR100235284B1 - 반도체 장치 및 반도체 장치의 내부 기능 식별 방법 - Google Patents

반도체 장치 및 반도체 장치의 내부 기능 식별 방법 Download PDF

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Publication number
KR100235284B1
KR100235284B1 KR1019970011762A KR19970011762A KR100235284B1 KR 100235284 B1 KR100235284 B1 KR 100235284B1 KR 1019970011762 A KR1019970011762 A KR 1019970011762A KR 19970011762 A KR19970011762 A KR 19970011762A KR 100235284 B1 KR100235284 B1 KR 100235284B1
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KR
South Korea
Prior art keywords
circuit
signal
semiconductor device
pad
potential
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019970011762A
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English (en)
Korean (ko)
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KR19980041695A (ko
Inventor
마사유키 이케타니
시게키 오바야시
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR19980041695A publication Critical patent/KR19980041695A/ko
Application granted granted Critical
Publication of KR100235284B1 publication Critical patent/KR100235284B1/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019970011762A 1996-11-05 1997-03-31 반도체 장치 및 반도체 장치의 내부 기능 식별 방법 Expired - Fee Related KR100235284B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-292695 1996-11-05
JP29269596A JP3728356B2 (ja) 1996-11-05 1996-11-05 半導体装置

Publications (2)

Publication Number Publication Date
KR19980041695A KR19980041695A (ko) 1998-08-17
KR100235284B1 true KR100235284B1 (ko) 1999-12-15

Family

ID=17785111

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970011762A Expired - Fee Related KR100235284B1 (ko) 1996-11-05 1997-03-31 반도체 장치 및 반도체 장치의 내부 기능 식별 방법

Country Status (5)

Country Link
US (1) US5764573A (enExample)
JP (1) JP3728356B2 (enExample)
KR (1) KR100235284B1 (enExample)
CN (1) CN1110095C (enExample)
DE (1) DE19706534B4 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505574B1 (ko) * 1997-12-30 2005-09-26 삼성전자주식회사 내부 선택 사양의 확인이 가능한 반도체 장치
KR100310418B1 (ko) * 1999-01-18 2001-11-02 김영환 데이타 출력버퍼
KR100344838B1 (ko) * 2000-07-24 2002-07-20 주식회사 하이닉스반도체 본딩 옵션 회로
KR100725092B1 (ko) * 2000-12-07 2007-06-04 삼성전자주식회사 반도체 메모리 장치의 칩 내부 신호선 감지장치
KR100402388B1 (ko) * 2001-09-24 2003-10-17 삼성전자주식회사 칩선택 출력 시간이 단축된 반도체 메모리 장치
JP2003257199A (ja) * 2001-12-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
JP5841035B2 (ja) * 2012-10-12 2016-01-06 日本電信電話株式会社 ディジタル／アナログ変換器
CN109143022B (zh) * 2018-04-24 2024-06-07 赛凯诺技术（深圳）有限公司 防护单片机芯片被倒插致损的方法和电路
JP7179165B2 (ja) * 2019-04-23 2022-11-28 日立Astemo株式会社 半導体集積回路装置および半導体集積回路装置の検査方法
US12488856B2 (en) 2023-01-11 2025-12-02 Samsung Electronics Co., Ltd. Memory device, operation method of memory device, and operation method of test device configured to test memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159583A (ja) * 1988-12-13 1990-06-19 Nec Corp 半導体集積回路
JP3039053B2 (ja) * 1991-11-19 2000-05-08 日本電気株式会社 半導体集積回路
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
JPH06275094A (ja) * 1993-03-23 1994-09-30 Mitsubishi Electric Corp 半導体装置および半導体メモリ装置

Also Published As

Publication number Publication date
US5764573A (en) 1998-06-09
JP3728356B2 (ja) 2005-12-21
DE19706534B4 (de) 2005-09-22
KR19980041695A (ko) 1998-08-17
JPH10132908A (ja) 1998-05-22
CN1110095C (zh) 2003-05-28
DE19706534A1 (de) 1998-05-07
CN1181505A (zh) 1998-05-13

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