JP3728356B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3728356B2
JP3728356B2 JP29269596A JP29269596A JP3728356B2 JP 3728356 B2 JP3728356 B2 JP 3728356B2 JP 29269596 A JP29269596 A JP 29269596A JP 29269596 A JP29269596 A JP 29269596A JP 3728356 B2 JP3728356 B2 JP 3728356B2
Authority
JP
Japan
Prior art keywords
pad
circuit
signal
potential
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29269596A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10132908A5 (enExample
JPH10132908A (ja
Inventor
正之 池谷
茂樹 大林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP29269596A priority Critical patent/JP3728356B2/ja
Priority to US08/787,803 priority patent/US5764573A/en
Priority to DE19706534A priority patent/DE19706534B4/de
Priority to CN97109942A priority patent/CN1110095C/zh
Priority to KR1019970011762A priority patent/KR100235284B1/ko
Publication of JPH10132908A publication Critical patent/JPH10132908A/ja
Publication of JPH10132908A5 publication Critical patent/JPH10132908A5/ja
Application granted granted Critical
Publication of JP3728356B2 publication Critical patent/JP3728356B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP29269596A 1996-11-05 1996-11-05 半導体装置 Expired - Fee Related JP3728356B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP29269596A JP3728356B2 (ja) 1996-11-05 1996-11-05 半導体装置
US08/787,803 US5764573A (en) 1996-11-05 1997-01-23 Semiconductor device capable of externally and readily identifying set bonding optional function and method of identifying internal function of semiconductor device
DE19706534A DE19706534B4 (de) 1996-11-05 1997-02-19 Halbleitereinrichtung, bei der eine interne Funktion entsprechend einem Potential einer speziellen Anschlußfläche bestimmt wird, und Verfahren des Bestimmens einer internen Funktion einer Halbleitereinrichtung
CN97109942A CN1110095C (zh) 1996-11-05 1997-03-31 半导体装置及半导体装置的内部功能识别方法
KR1019970011762A KR100235284B1 (ko) 1996-11-05 1997-03-31 반도체 장치 및 반도체 장치의 내부 기능 식별 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29269596A JP3728356B2 (ja) 1996-11-05 1996-11-05 半導体装置

Publications (3)

Publication Number Publication Date
JPH10132908A JPH10132908A (ja) 1998-05-22
JPH10132908A5 JPH10132908A5 (enExample) 2004-10-21
JP3728356B2 true JP3728356B2 (ja) 2005-12-21

Family

ID=17785111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29269596A Expired - Fee Related JP3728356B2 (ja) 1996-11-05 1996-11-05 半導体装置

Country Status (5)

Country Link
US (1) US5764573A (enExample)
JP (1) JP3728356B2 (enExample)
KR (1) KR100235284B1 (enExample)
CN (1) CN1110095C (enExample)
DE (1) DE19706534B4 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505574B1 (ko) * 1997-12-30 2005-09-26 삼성전자주식회사 내부 선택 사양의 확인이 가능한 반도체 장치
KR100310418B1 (ko) * 1999-01-18 2001-11-02 김영환 데이타 출력버퍼
KR100344838B1 (ko) * 2000-07-24 2002-07-20 주식회사 하이닉스반도체 본딩 옵션 회로
KR100725092B1 (ko) * 2000-12-07 2007-06-04 삼성전자주식회사 반도체 메모리 장치의 칩 내부 신호선 감지장치
KR100402388B1 (ko) * 2001-09-24 2003-10-17 삼성전자주식회사 칩선택 출력 시간이 단축된 반도체 메모리 장치
JP2003257199A (ja) * 2001-12-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
JP5841035B2 (ja) * 2012-10-12 2016-01-06 日本電信電話株式会社 ディジタル／アナログ変換器
CN109143022B (zh) * 2018-04-24 2024-06-07 赛凯诺技术（深圳）有限公司 防护单片机芯片被倒插致损的方法和电路
JP7179165B2 (ja) * 2019-04-23 2022-11-28 日立Astemo株式会社 半導体集積回路装置および半導体集積回路装置の検査方法
US12488856B2 (en) 2023-01-11 2025-12-02 Samsung Electronics Co., Ltd. Memory device, operation method of memory device, and operation method of test device configured to test memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159583A (ja) * 1988-12-13 1990-06-19 Nec Corp 半導体集積回路
JP3039053B2 (ja) * 1991-11-19 2000-05-08 日本電気株式会社 半導体集積回路
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
JPH06275094A (ja) * 1993-03-23 1994-09-30 Mitsubishi Electric Corp 半導体装置および半導体メモリ装置

Also Published As

Publication number Publication date
US5764573A (en) 1998-06-09
DE19706534B4 (de) 2005-09-22
KR19980041695A (ko) 1998-08-17
JPH10132908A (ja) 1998-05-22
CN1110095C (zh) 2003-05-28
DE19706534A1 (de) 1998-05-07
CN1181505A (zh) 1998-05-13
KR100235284B1 (ko) 1999-12-15

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