CN1110095C - 半导体装置及半导体装置的内部功能识别方法 - Google Patents

半导体装置及半导体装置的内部功能识别方法 Download PDF

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Publication number
CN1110095C
CN1110095C CN97109942A CN97109942A CN1110095C CN 1110095 C CN1110095 C CN 1110095C CN 97109942 A CN97109942 A CN 97109942A CN 97109942 A CN97109942 A CN 97109942A CN 1110095 C CN1110095 C CN 1110095C
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China
Prior art keywords
circuit
pad
signal
potential
semiconductor device
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Expired - Fee Related
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CN97109942A
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English (en)
Chinese (zh)
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CN1181505A (zh
Inventor
池谷正之
大林茂树
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1181505A publication Critical patent/CN1181505A/zh
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Publication of CN1110095C publication Critical patent/CN1110095C/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN97109942A 1996-11-05 1997-03-31 半导体装置及半导体装置的内部功能识别方法 Expired - Fee Related CN1110095C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP292695/96 1996-11-05
JP29269596A JP3728356B2 (ja) 1996-11-05 1996-11-05 半導体装置
JP292695/1996 1996-11-05

Publications (2)

Publication Number Publication Date
CN1181505A CN1181505A (zh) 1998-05-13
CN1110095C true CN1110095C (zh) 2003-05-28

Family

ID=17785111

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97109942A Expired - Fee Related CN1110095C (zh) 1996-11-05 1997-03-31 半导体装置及半导体装置的内部功能识别方法

Country Status (5)

Country Link
US (1) US5764573A (enExample)
JP (1) JP3728356B2 (enExample)
KR (1) KR100235284B1 (enExample)
CN (1) CN1110095C (enExample)
DE (1) DE19706534B4 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505574B1 (ko) * 1997-12-30 2005-09-26 삼성전자주식회사 내부 선택 사양의 확인이 가능한 반도체 장치
KR100310418B1 (ko) * 1999-01-18 2001-11-02 김영환 데이타 출력버퍼
KR100344838B1 (ko) * 2000-07-24 2002-07-20 주식회사 하이닉스반도체 본딩 옵션 회로
KR100725092B1 (ko) * 2000-12-07 2007-06-04 삼성전자주식회사 반도체 메모리 장치의 칩 내부 신호선 감지장치
KR100402388B1 (ko) * 2001-09-24 2003-10-17 삼성전자주식회사 칩선택 출력 시간이 단축된 반도체 메모리 장치
JP2003257199A (ja) * 2001-12-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
JP5841035B2 (ja) * 2012-10-12 2016-01-06 日本電信電話株式会社 ディジタル／アナログ変換器
CN109143022B (zh) * 2018-04-24 2024-06-07 赛凯诺技术（深圳）有限公司 防护单片机芯片被倒插致损的方法和电路
JP7179165B2 (ja) * 2019-04-23 2022-11-28 日立Astemo株式会社 半導体集積回路装置および半導体集積回路装置の検査方法
US12488856B2 (en) 2023-01-11 2025-12-02 Samsung Electronics Co., Ltd. Memory device, operation method of memory device, and operation method of test device configured to test memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159583A (ja) * 1988-12-13 1990-06-19 Nec Corp 半導体集積回路
JP3039053B2 (ja) * 1991-11-19 2000-05-08 日本電気株式会社 半導体集積回路
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
JPH06275094A (ja) * 1993-03-23 1994-09-30 Mitsubishi Electric Corp 半導体装置および半導体メモリ装置

Also Published As

Publication number Publication date
US5764573A (en) 1998-06-09
JP3728356B2 (ja) 2005-12-21
DE19706534B4 (de) 2005-09-22
KR19980041695A (ko) 1998-08-17
JPH10132908A (ja) 1998-05-22
DE19706534A1 (de) 1998-05-07
CN1181505A (zh) 1998-05-13
KR100235284B1 (ko) 1999-12-15

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C14 Grant of patent or utility model
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C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20030528

Termination date: 20140331