KR100192188B1 - 멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로 - Google Patents

멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로 Download PDF

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Publication number
KR100192188B1
KR100192188B1 KR1019950031591A KR19950031591A KR100192188B1 KR 100192188 B1 KR100192188 B1 KR 100192188B1 KR 1019950031591 A KR1019950031591 A KR 1019950031591A KR 19950031591 A KR19950031591 A KR 19950031591A KR 100192188 B1 KR100192188 B1 KR 100192188B1
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KR
South Korea
Prior art keywords
esd
well
diode
power
vss
Prior art date
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Expired - Fee Related
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KR1019950031591A
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English (en)
Korean (ko)
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KR960012546A (ko
Inventor
하워드 볼드맨 스티븐
Original Assignee
포만 제프리 엘
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR960012546A publication Critical patent/KR960012546A/ko
Application granted granted Critical
Publication of KR100192188B1 publication Critical patent/KR100192188B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019950031591A 1994-09-26 1995-09-25 멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로 Expired - Fee Related KR100192188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31225594A 1994-09-26 1994-09-26
US8/312,255 1994-09-26

Publications (2)

Publication Number Publication Date
KR960012546A KR960012546A (ko) 1996-04-20
KR100192188B1 true KR100192188B1 (ko) 1999-06-15

Family

ID=23210595

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031591A Expired - Fee Related KR100192188B1 (ko) 1994-09-26 1995-09-25 멀티 레일의 파워 격자 응용을 위한 정전기 방전 보호회로

Country Status (5)

Country Link
US (1) US5945713A (enExample)
EP (1) EP0703622A2 (enExample)
JP (1) JPH08111508A (enExample)
KR (1) KR100192188B1 (enExample)
TW (1) TW289153B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100386079B1 (ko) * 1996-06-14 2003-09-19 주식회사 하이닉스반도체 정전방전(esd)구조

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US6388857B1 (en) 1999-07-23 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device with improved surge resistance
JP3926975B2 (ja) 1999-09-22 2007-06-06 株式会社東芝 スタック型ｍｏｓトランジスタ保護回路
JP3450244B2 (ja) * 1999-12-03 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体保護装置
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US6366435B1 (en) * 2000-02-04 2002-04-02 United Microelectronics Corp. Multiple sources ESD protection for an epitaxy wafer substrate
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US7280332B2 (en) * 2002-01-18 2007-10-09 The Regents Of The University Of California On-chip ESD protection circuit for compound semiconductor heterojunction bipolar transistor RF circuits
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US6849479B2 (en) * 2002-12-03 2005-02-01 Taiwan Semiconductor Manufacturing Company Substrate based ESD network protection method for flip chip design
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US7112853B2 (en) * 2003-12-17 2006-09-26 Broadcom Corporation System for ESD protection with extra headroom in relatively low supply voltage integrated circuits
KR100605580B1 (ko) 2003-12-29 2006-07-28 주식회사 하이닉스반도체 정전기 보호회로
JP4590888B2 (ja) 2004-03-15 2010-12-01 株式会社デンソー 半導体出力回路
US20050275037A1 (en) * 2004-06-12 2005-12-15 Chung Shine C Semiconductor devices with high voltage tolerance
US7405445B2 (en) * 2004-06-18 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for ESD protection
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US7566914B2 (en) 2005-07-07 2009-07-28 Intersil Americas Inc. Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits
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US7813092B2 (en) * 2005-09-19 2010-10-12 The Regents Of The University Of California ESD unit protection cell for distributed amplifiers
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DE102005047000A1 (de) * 2005-09-30 2007-04-12 Infineon Technologies Ag Halbleiterstruktur zur Ableitung eines Überspannungsimpulses und Verfahren zur Herstellung desselben
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JP4822292B2 (ja) 2008-12-17 2011-11-24 三菱電機株式会社 半導体装置
US7989282B2 (en) * 2009-03-26 2011-08-02 International Business Machines Corporation Structure and method for latchup improvement using through wafer via latchup guard ring
TWI422007B (zh) * 2010-01-18 2014-01-01 Macronix Int Co Ltd 一種包含環繞井之具有靜電放電容忍的輸入／輸出墊電路
CN102142412B (zh) * 2010-02-02 2013-06-19 旺宏电子股份有限公司 一种包含环绕井的具有静电放电容忍的输入/输出垫电路
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Also Published As

Publication number Publication date
JPH08111508A (ja) 1996-04-30
EP0703622A2 (en) 1996-03-27
US5945713A (en) 1999-08-31
KR960012546A (ko) 1996-04-20
TW289153B (enExample) 1996-10-21

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