KR0142055B1 - 정전 척 - Google Patents

정전 척

Info

Publication number
KR0142055B1
KR0142055B1 KR1019940031042A KR19940031042A KR0142055B1 KR 0142055 B1 KR0142055 B1 KR 0142055B1 KR 1019940031042 A KR1019940031042 A KR 1019940031042A KR 19940031042 A KR19940031042 A KR 19940031042A KR 0142055 B1 KR0142055 B1 KR 0142055B1
Authority
KR
South Korea
Prior art keywords
dielectric layer
less
clamping
electrostatic chuck
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940031042A
Other languages
English (en)
Korean (ko)
Other versions
KR950015708A (ko
Inventor
테츠오 기타바야시
아츠시 오바라
준 미야지
야수미 사고
마사미 사사키
Original Assignee
시게후치 마사토시
토토기키 가부시키 가이샤
니시히라 슈운지
닛덴 아네루바 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시게후치 마사토시, 토토기키 가부시키 가이샤, 니시히라 슈운지, 닛덴 아네루바 가부시키 가이샤 filed Critical 시게후치 마사토시
Publication of KR950015708A publication Critical patent/KR950015708A/ko
Application granted granted Critical
Publication of KR0142055B1 publication Critical patent/KR0142055B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
KR1019940031042A 1993-11-29 1994-11-24 정전 척 Expired - Lifetime KR0142055B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29838893A JPH07153825A (ja) 1993-11-29 1993-11-29 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
JP298388/1993 1993-11-29

Publications (2)

Publication Number Publication Date
KR950015708A KR950015708A (ko) 1995-06-17
KR0142055B1 true KR0142055B1 (ko) 1998-07-15

Family

ID=17859060

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940031042A Expired - Lifetime KR0142055B1 (ko) 1993-11-29 1994-11-24 정전 척

Country Status (4)

Country Link
US (1) US5530616A (enExample)
JP (1) JPH07153825A (enExample)
KR (1) KR0142055B1 (enExample)
TW (1) TW258827B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626118B1 (ko) * 1998-09-30 2006-09-20 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱 시스템내에 웨이퍼를 유지하기위한 정전 척을 포함하는 음극 어셈블리
KR100709589B1 (ko) * 2005-11-14 2007-04-20 (주)소슬 웨이퍼를 용이하게 탈착시킬 수 있는 엠보싱 척
US7580238B2 (en) 2007-05-18 2009-08-25 Dongbu Hitek Co., Ltd. Electrostatic chuck structure for semiconductor manufacturing apparatus
KR100963722B1 (ko) * 2007-02-14 2010-06-14 도쿄엘렉트론가부시키가이샤 기판 탑재대 및 그 표면 처리 방법

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5631803A (en) * 1995-01-06 1997-05-20 Applied Materials, Inc. Erosion resistant electrostatic chuck with improved cooling system
JP3457477B2 (ja) * 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5781400A (en) * 1995-09-20 1998-07-14 Hitachi, Ltd. Electrostatically attracting electrode and a method of manufacture thereof
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5841623A (en) * 1995-12-22 1998-11-24 Lam Research Corporation Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
JPH09213777A (ja) * 1996-01-31 1997-08-15 Kyocera Corp 静電チャック
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5656093A (en) * 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US5986873A (en) * 1996-07-01 1999-11-16 Packard Hughes Interconnect Co. Creating surface topography on an electrostatic chuck with a mandrel
US6217655B1 (en) * 1997-01-31 2001-04-17 Applied Materials, Inc. Stand-off pad for supporting a wafer on a substrate support chuck
US5870271A (en) * 1997-02-19 1999-02-09 Applied Materials, Inc. Pressure actuated sealing diaphragm for chucks
US5986874A (en) * 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
US5978202A (en) * 1997-06-27 1999-11-02 Applied Materials, Inc. Electrostatic chuck having a thermal transfer regulator pad
US5903428A (en) * 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
JP3983387B2 (ja) * 1998-09-29 2007-09-26 日本碍子株式会社 静電チャック
US6320736B1 (en) 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
JP2000340640A (ja) * 1999-05-31 2000-12-08 Toto Ltd 非接触型静電吸着装置
US6373679B1 (en) 1999-07-02 2002-04-16 Cypress Semiconductor Corp. Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
KR20010018837A (ko) * 1999-08-23 2001-03-15 김영환 반도체 식각장비의 정전척
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP3859937B2 (ja) 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
JP4312394B2 (ja) * 2001-01-29 2009-08-12 日本碍子株式会社 静電チャックおよび基板処理装置
JP3626933B2 (ja) * 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
TWI272689B (en) * 2001-02-16 2007-02-01 Tokyo Electron Ltd Method and apparatus for transferring heat from a substrate to a chuck
JP3758979B2 (ja) * 2001-02-27 2006-03-22 京セラ株式会社 静電チャック及び処理装置
JP2002270681A (ja) * 2001-03-07 2002-09-20 Anelva Corp 基板処理用静電吸着機構
US6628503B2 (en) * 2001-03-13 2003-09-30 Nikon Corporation Gas cooled electrostatic pin chuck for vacuum applications
DE60225135T2 (de) * 2001-05-31 2009-02-26 Shin-Etsu Handotai Co., Ltd. Verfahren zur herstellung eines halbleiterswafers
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6490145B1 (en) 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
JP4094262B2 (ja) 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
JP2003100855A (ja) 2001-09-27 2003-04-04 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ処理装置、シリコン単結晶ウェーハおよびシリコンエピタキシャルウェーハの製造方法
JP4288694B2 (ja) * 2001-12-20 2009-07-01 株式会社ニコン 基板保持装置、露光装置及びデバイス製造方法
JP2003224180A (ja) * 2002-01-28 2003-08-08 Kyocera Corp ウエハ支持部材
KR100511854B1 (ko) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US20040055709A1 (en) * 2002-09-19 2004-03-25 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
JP2004128019A (ja) * 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
TWI254841B (en) * 2002-12-23 2006-05-11 Asml Netherlands Bv Lithographic apparatus
KR20040070008A (ko) 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
US7033443B2 (en) * 2003-03-28 2006-04-25 Axcelis Technologies, Inc. Gas-cooled clamp for RTP
EP1498777A1 (en) * 2003-07-15 2005-01-19 ASML Netherlands B.V. Substrate holder and lithographic projection apparatus
JP4309714B2 (ja) * 2003-08-27 2009-08-05 信越化学工業株式会社 静電吸着機能を有する加熱装置
EP1510868A1 (en) * 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6905984B2 (en) * 2003-10-10 2005-06-14 Axcelis Technologies, Inc. MEMS based contact conductivity electrostatic chuck
US7663860B2 (en) 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI267940B (en) 2004-06-28 2006-12-01 Kyocera Corp Electrostatic chuck
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
USD561206S1 (en) * 2005-11-25 2008-02-05 Momentive Performance Materials Inc. Electrostatic chuck
JP2007173596A (ja) * 2005-12-22 2007-07-05 Ngk Insulators Ltd 静電チャック
US20070217119A1 (en) * 2006-03-17 2007-09-20 David Johnson Apparatus and Method for Carrying Substrates
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP2006303514A (ja) * 2006-05-01 2006-11-02 Fujitsu Ltd 静電チャック、成膜方法及びエッチング方法
US7558045B1 (en) * 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
US8139340B2 (en) * 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
USD708651S1 (en) * 2011-11-22 2014-07-08 Applied Materials, Inc. Electrostatic chuck
JP6359565B2 (ja) * 2013-01-22 2018-07-18 エーエスエムエル ネザーランズ ビー．ブイ． 静電クランプ
US10557190B2 (en) * 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
JP6100564B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 基板処理装置及び載置台
JP6649689B2 (ja) * 2015-03-16 2020-02-19 株式会社ディスコ 減圧処理装置及びウエーハの保持方法
US20170069518A1 (en) * 2015-09-04 2017-03-09 Globalfoundries Inc. Electrostatic substrate holder with non-planar surface and method of etching
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US11152238B2 (en) * 2017-11-30 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing stage profiler jig
KR20200130743A (ko) * 2018-04-04 2020-11-19 램 리써치 코포레이션 시일 표면을 갖는 정전 척
US11133212B2 (en) * 2018-05-16 2021-09-28 Applied Materials, Inc. High temperature electrostatic chuck
US10663871B2 (en) * 2018-07-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Reticle stage and method for using the same
JP6705551B1 (ja) * 2019-03-22 2020-06-03 Toto株式会社 静電チャック
US20230395359A1 (en) * 2020-10-20 2023-12-07 Lam Research Corporation Cold edge low temperature electrostatic chuck
JP2023031456A (ja) * 2021-08-25 2023-03-09 日本特殊陶業株式会社 基板保持部材、およびその製造方法

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JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
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US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
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JP2854453B2 (ja) * 1992-03-27 1999-02-03 京セラ株式会社 半導体ウェハ保持装置
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US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626118B1 (ko) * 1998-09-30 2006-09-20 어플라이드 머티어리얼스, 인코포레이티드 반도체 웨이퍼 프로세싱 시스템내에 웨이퍼를 유지하기위한 정전 척을 포함하는 음극 어셈블리
KR100709589B1 (ko) * 2005-11-14 2007-04-20 (주)소슬 웨이퍼를 용이하게 탈착시킬 수 있는 엠보싱 척
KR100963722B1 (ko) * 2007-02-14 2010-06-14 도쿄엘렉트론가부시키가이샤 기판 탑재대 및 그 표면 처리 방법
US9214376B2 (en) 2007-02-14 2015-12-15 Tokyo Electron Limited Substrate mounting stage and surface treatment method therefor
US7580238B2 (en) 2007-05-18 2009-08-25 Dongbu Hitek Co., Ltd. Electrostatic chuck structure for semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JPH07153825A (ja) 1995-06-16
US5530616A (en) 1996-06-25
KR950015708A (ko) 1995-06-17
TW258827B (enExample) 1995-10-01

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