KR0138352B1 - 반도체 장치 및 그의 제조방법 - Google Patents

반도체 장치 및 그의 제조방법

Info

Publication number
KR0138352B1
KR0138352B1 KR1019930028221A KR930028221A KR0138352B1 KR 0138352 B1 KR0138352 B1 KR 0138352B1 KR 1019930028221 A KR1019930028221 A KR 1019930028221A KR 930028221 A KR930028221 A KR 930028221A KR 0138352 B1 KR0138352 B1 KR 0138352B1
Authority
KR
South Korea
Prior art keywords
conductive
forming
layer
insulating layer
connection pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930028221A
Other languages
English (en)
Korean (ko)
Other versions
KR950021547A (ko
Inventor
이용희
서영우
신중현
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019930028221A priority Critical patent/KR0138352B1/ko
Priority to US08/352,248 priority patent/US5484739A/en
Priority to TW083111711A priority patent/TW257888B/zh
Priority to DE4444686A priority patent/DE4444686B4/de
Priority to GB9720688A priority patent/GB2315159B/en
Priority to GB9425338A priority patent/GB2285173B/en
Priority to JP31351994A priority patent/JP3741154B2/ja
Publication of KR950021547A publication Critical patent/KR950021547A/ko
Priority to US08/747,378 priority patent/US5818091A/en
Application granted granted Critical
Publication of KR0138352B1 publication Critical patent/KR0138352B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/835—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising LDMOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019930028221A 1993-12-17 1993-12-17 반도체 장치 및 그의 제조방법 Expired - Lifetime KR0138352B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019930028221A KR0138352B1 (ko) 1993-12-17 1993-12-17 반도체 장치 및 그의 제조방법
US08/352,248 US5484739A (en) 1993-12-17 1994-12-08 Method for manufacturing a CMOS semiconductor device
TW083111711A TW257888B (show.php) 1993-12-17 1994-12-14
GB9720688A GB2315159B (en) 1993-12-17 1994-12-15 A semiconductor device
DE4444686A DE4444686B4 (de) 1993-12-17 1994-12-15 Halbleiterbauelement mit MOS-Transistor und Verfahren zu seiner Herstellung
GB9425338A GB2285173B (en) 1993-12-17 1994-12-15 Semiconductor device and manufacturing method thereof
JP31351994A JP3741154B2 (ja) 1993-12-17 1994-12-16 半導体装置の製造方法
US08/747,378 US5818091A (en) 1993-12-17 1996-11-12 Semiconductor device with selectively patterned connection pad layer for increasing a contact margin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930028221A KR0138352B1 (ko) 1993-12-17 1993-12-17 반도체 장치 및 그의 제조방법

Publications (2)

Publication Number Publication Date
KR950021547A KR950021547A (ko) 1995-07-26
KR0138352B1 true KR0138352B1 (ko) 1998-04-28

Family

ID=19371426

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930028221A Expired - Lifetime KR0138352B1 (ko) 1993-12-17 1993-12-17 반도체 장치 및 그의 제조방법

Country Status (6)

Country Link
US (2) US5484739A (show.php)
JP (1) JP3741154B2 (show.php)
KR (1) KR0138352B1 (show.php)
DE (1) DE4444686B4 (show.php)
GB (2) GB2315159B (show.php)
TW (1) TW257888B (show.php)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
US5986314A (en) * 1997-10-08 1999-11-16 Texas Instruments Incorporated Depletion mode MOS capacitor with patterned Vt implants
JP3554483B2 (ja) 1998-04-22 2004-08-18 シャープ株式会社 Ｃｍｏｓ型固体撮像装置
US7019672B2 (en) * 1998-12-24 2006-03-28 Synaptics (Uk) Limited Position sensor
KR100328810B1 (ko) * 1999-07-08 2002-03-14 윤종용 반도체 장치를 위한 콘택 구조 및 제조 방법
EP1412912B1 (en) 2001-05-21 2008-06-18 Synaptics (UK) Limited Position sensor
GB2403017A (en) 2002-03-05 2004-12-22 Synaptics Position sensor
AU2003232360A1 (en) 2002-06-05 2003-12-22 Synaptics (Uk) Limited Signal transfer method and apparatus
KR20040072446A (ko) * 2003-02-12 2004-08-18 삼성전자주식회사 반도체 기판의 가장자리 상의 금속막을 선택적으로제거하는 방법
GB0317370D0 (en) 2003-07-24 2003-08-27 Synaptics Uk Ltd Magnetic calibration array
GB0319945D0 (en) 2003-08-26 2003-09-24 Synaptics Uk Ltd Inductive sensing system
JP2008084901A (ja) * 2006-09-26 2008-04-10 Nec Electronics Corp 半導体装置およびその製造方法
GB2461448B (en) 2007-05-10 2011-08-31 Cambridge Integrated Circuits Ltd Transducer
US8038484B2 (en) 2007-12-11 2011-10-18 Tyco Healthcare Group Lp ECG electrode connector
USD737979S1 (en) 2008-12-09 2015-09-01 Covidien Lp ECG electrode connector
GB2488389C (en) 2010-12-24 2018-08-22 Cambridge Integrated Circuits Ltd Position sensing transducer
WO2013013370A1 (en) 2011-07-22 2013-01-31 Tyco Healthcare Group Lp Ecg electrode connector
GB2503006B (en) 2012-06-13 2017-08-09 Cambridge Integrated Circuits Ltd Position sensing transducer
EP2967396B1 (en) 2013-03-15 2019-02-13 Kpr U.S., Llc Electrode connector with a conductive member
USD771818S1 (en) 2013-03-15 2016-11-15 Covidien Lp ECG electrode connector
US9408546B2 (en) 2013-03-15 2016-08-09 Covidien Lp Radiolucent ECG electrode system

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Publication number Priority date Publication date Assignee Title
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5775453A (en) * 1980-10-29 1982-05-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS60180169A (ja) * 1984-02-27 1985-09-13 Nec Corp 絶縁ゲ−ト型電界効果半導体装置
KR940006668B1 (ko) * 1984-11-22 1994-07-25 가부시끼가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치의 제조방법
JP2559397B2 (ja) * 1987-03-16 1996-12-04 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPH0279462A (ja) * 1988-09-14 1990-03-20 Toshiba Corp 半導体記憶装置
JPH02246369A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
GB2233492A (en) * 1989-06-16 1991-01-09 Philips Nv A method of manufacturing a semiconductor bimos device
US5237187A (en) * 1990-11-30 1993-08-17 Hitachi, Ltd. Semiconductor memory circuit device and method for fabricating same
US5128272A (en) * 1991-06-18 1992-07-07 National Semiconductor Corporation Self-aligned planar monolithic integrated circuit vertical transistor process
JP2966647B2 (ja) * 1992-06-15 1999-10-25 三菱電機株式会社 半導体装置およびその製造方法
US5232874A (en) * 1992-06-22 1993-08-03 Micron Technology, Inc. Method for producing a semiconductor wafer having shallow and deep buried contacts

Also Published As

Publication number Publication date
US5484739A (en) 1996-01-16
JP3741154B2 (ja) 2006-02-01
GB2315159A (en) 1998-01-21
KR950021547A (ko) 1995-07-26
GB9425338D0 (en) 1995-02-15
DE4444686B4 (de) 2009-07-02
GB9720688D0 (en) 1997-11-26
US5818091A (en) 1998-10-06
TW257888B (show.php) 1995-09-21
DE4444686A1 (de) 1995-06-22
GB2315159B (en) 1998-05-13
GB2285173A (en) 1995-06-28
GB2285173B (en) 1998-05-06
JPH07202015A (ja) 1995-08-04

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