JPWO2024252971A5 - - Google Patents
Info
- Publication number
- JPWO2024252971A5 JPWO2024252971A5 JP2025526057A JP2025526057A JPWO2024252971A5 JP WO2024252971 A5 JPWO2024252971 A5 JP WO2024252971A5 JP 2025526057 A JP2025526057 A JP 2025526057A JP 2025526057 A JP2025526057 A JP 2025526057A JP WO2024252971 A5 JPWO2024252971 A5 JP WO2024252971A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor device
- gate structure
- bottom wall
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023093514 | 2023-06-06 | ||
| PCT/JP2024/019425 WO2024252971A1 (ja) | 2023-06-06 | 2024-05-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024252971A1 JPWO2024252971A1 (https=) | 2024-12-12 |
| JPWO2024252971A5 true JPWO2024252971A5 (https=) | 2026-03-10 |
Family
ID=93795897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025526057A Pending JPWO2024252971A1 (https=) | 2023-06-06 | 2024-05-27 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20260090037A1 (https=) |
| JP (1) | JPWO2024252971A1 (https=) |
| WO (1) | WO2024252971A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015103072B4 (de) * | 2015-03-03 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet |
| JP6453188B2 (ja) * | 2015-09-04 | 2019-01-16 | 株式会社豊田中央研究所 | 炭化珪素半導体装置 |
| US10622446B2 (en) * | 2016-08-05 | 2020-04-14 | Fuji Electric Co., Ltd. | Silicon carbide based power semiconductor device with low on voltage and high speed characteristics |
| JP6830627B2 (ja) * | 2016-12-22 | 2021-02-17 | 国立研究開発法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
| DE112018002873T5 (de) * | 2017-06-06 | 2020-02-27 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandler |
| JP7512920B2 (ja) * | 2021-02-05 | 2024-07-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
-
2024
- 2024-05-27 WO PCT/JP2024/019425 patent/WO2024252971A1/ja not_active Ceased
- 2024-05-27 JP JP2025526057A patent/JPWO2024252971A1/ja active Pending
-
2025
- 2025-12-05 US US19/409,917 patent/US20260090037A1/en active Pending
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