JPWO2024252971A5 - - Google Patents

Info

Publication number
JPWO2024252971A5
JPWO2024252971A5 JP2025526057A JP2025526057A JPWO2024252971A5 JP WO2024252971 A5 JPWO2024252971 A5 JP WO2024252971A5 JP 2025526057 A JP2025526057 A JP 2025526057A JP 2025526057 A JP2025526057 A JP 2025526057A JP WO2024252971 A5 JPWO2024252971 A5 JP WO2024252971A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
gate structure
bottom wall
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025526057A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024252971A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/019425 external-priority patent/WO2024252971A1/ja
Publication of JPWO2024252971A1 publication Critical patent/JPWO2024252971A1/ja
Publication of JPWO2024252971A5 publication Critical patent/JPWO2024252971A5/ja
Pending legal-status Critical Current

Links

JP2025526057A 2023-06-06 2024-05-27 Pending JPWO2024252971A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023093514 2023-06-06
PCT/JP2024/019425 WO2024252971A1 (ja) 2023-06-06 2024-05-27 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024252971A1 JPWO2024252971A1 (https=) 2024-12-12
JPWO2024252971A5 true JPWO2024252971A5 (https=) 2026-03-10

Family

ID=93795897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025526057A Pending JPWO2024252971A1 (https=) 2023-06-06 2024-05-27

Country Status (3)

Country Link
US (1) US20260090037A1 (https=)
JP (1) JPWO2024252971A1 (https=)
WO (1) WO2024252971A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015103072B4 (de) * 2015-03-03 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet
JP6453188B2 (ja) * 2015-09-04 2019-01-16 株式会社豊田中央研究所 炭化珪素半導体装置
US10622446B2 (en) * 2016-08-05 2020-04-14 Fuji Electric Co., Ltd. Silicon carbide based power semiconductor device with low on voltage and high speed characteristics
JP6830627B2 (ja) * 2016-12-22 2021-02-17 国立研究開発法人産業技術総合研究所 半導体装置および半導体装置の製造方法
CN110709997B (zh) * 2017-06-06 2023-02-28 三菱电机株式会社 半导体装置以及电力变换装置
JP7512920B2 (ja) * 2021-02-05 2024-07-09 三菱電機株式会社 半導体装置およびその製造方法

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