JPWO2023189930A5 - - Google Patents

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Publication number
JPWO2023189930A5
JPWO2023189930A5 JP2024511951A JP2024511951A JPWO2023189930A5 JP WO2023189930 A5 JPWO2023189930 A5 JP WO2023189930A5 JP 2024511951 A JP2024511951 A JP 2024511951A JP 2024511951 A JP2024511951 A JP 2024511951A JP WO2023189930 A5 JPWO2023189930 A5 JP WO2023189930A5
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JP
Japan
Prior art keywords
layer
semiconductor device
opening
thickness direction
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511951A
Other languages
English (en)
Japanese (ja)
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JPWO2023189930A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/011189 external-priority patent/WO2023189930A1/ja
Publication of JPWO2023189930A1 publication Critical patent/JPWO2023189930A1/ja
Publication of JPWO2023189930A5 publication Critical patent/JPWO2023189930A5/ja
Pending legal-status Critical Current

Links

JP2024511951A 2022-03-31 2023-03-22 Pending JPWO2023189930A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022058713 2022-03-31
PCT/JP2023/011189 WO2023189930A1 (ja) 2022-03-31 2023-03-22 半導体素子および半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023189930A1 JPWO2023189930A1 (https=) 2023-10-05
JPWO2023189930A5 true JPWO2023189930A5 (https=) 2024-12-13

Family

ID=88201958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511951A Pending JPWO2023189930A1 (https=) 2022-03-31 2023-03-22

Country Status (3)

Country Link
US (1) US20250022822A1 (https=)
JP (1) JPWO2023189930A1 (https=)
WO (1) WO2023189930A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
CN105051886B (zh) * 2013-03-25 2018-06-08 瑞萨电子株式会社 半导体装置及其制造方法
JP6210482B2 (ja) * 2013-04-04 2017-10-11 ローム株式会社 半導体装置および半導体装置の製造方法
JP2016004877A (ja) * 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
JP2017033984A (ja) * 2015-07-29 2017-02-09 セイコーエプソン株式会社 半導体装置及びその製造方法、並びに、電子機器
JP6814698B2 (ja) * 2017-06-05 2021-01-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7611155B2 (ja) * 2019-09-30 2025-01-09 ローム株式会社 半導体装置

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