JPWO2023162735A5 - - Google Patents
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- Publication number
- JPWO2023162735A5 JPWO2023162735A5 JP2023544601A JP2023544601A JPWO2023162735A5 JP WO2023162735 A5 JPWO2023162735 A5 JP WO2023162735A5 JP 2023544601 A JP2023544601 A JP 2023544601A JP 2023544601 A JP2023544601 A JP 2023544601A JP WO2023162735 A5 JPWO2023162735 A5 JP WO2023162735A5
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gate trench
- conductivity type
- low concentration
- impurity layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 210000000746 body region Anatomy 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims 38
- 239000004020 conductor Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- 230000005669 field effect Effects 0.000 claims 3
- 239000010410 layer Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263313320P | 2022-02-24 | 2022-02-24 | |
| US63/313,320 | 2022-02-24 | ||
| PCT/JP2023/004664 WO2023162735A1 (ja) | 2022-02-24 | 2023-02-10 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023162735A1 JPWO2023162735A1 (https=) | 2023-08-31 |
| JP7393593B1 JP7393593B1 (ja) | 2023-12-06 |
| JPWO2023162735A5 true JPWO2023162735A5 (https=) | 2024-01-31 |
Family
ID=87765761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023544601A Active JP7393593B1 (ja) | 2022-02-24 | 2023-02-10 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12142678B2 (https=) |
| JP (1) | JP7393593B1 (https=) |
| CN (1) | CN118056281B (https=) |
| TW (1) | TWI838119B (https=) |
| WO (1) | WO2023162735A1 (https=) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5580150B2 (ja) | 2010-09-09 | 2014-08-27 | 株式会社東芝 | 半導体装置 |
| JP6022777B2 (ja) * | 2012-02-28 | 2016-11-09 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
| JP5825201B2 (ja) | 2012-03-05 | 2015-12-02 | 株式会社デンソー | 半導体装置およびその製造方法 |
| US9142655B2 (en) * | 2013-03-12 | 2015-09-22 | Infineon Technologies Ag | Semiconductor device |
| JP6679892B2 (ja) | 2015-05-15 | 2020-04-15 | 富士電機株式会社 | 半導体装置 |
| US10217738B2 (en) | 2015-05-15 | 2019-02-26 | Smk Corporation | IGBT semiconductor device |
| JP6509674B2 (ja) | 2015-08-10 | 2019-05-08 | 株式会社東芝 | 半導体装置 |
| WO2018123799A1 (ja) | 2016-12-27 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | 半導体装置 |
| JP6869791B2 (ja) | 2017-04-21 | 2021-05-12 | 三菱電機株式会社 | 半導体スイッチング素子及びその製造方法 |
| JP7055052B2 (ja) | 2018-04-05 | 2022-04-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| TWI761740B (zh) * | 2018-12-19 | 2022-04-21 | 日商新唐科技日本股份有限公司 | 半導體裝置 |
| JP7167717B2 (ja) * | 2019-01-07 | 2022-11-09 | 株式会社デンソー | 半導体装置 |
| JP7118033B2 (ja) * | 2019-06-07 | 2022-08-15 | 三菱電機株式会社 | 半導体装置 |
| WO2021024813A1 (ja) * | 2019-08-02 | 2021-02-11 | ローム株式会社 | 半導体装置 |
| JP7330092B2 (ja) * | 2019-12-25 | 2023-08-21 | 三菱電機株式会社 | 半導体装置 |
| US10910478B1 (en) * | 2020-03-04 | 2021-02-02 | Shuming Xu | Metal-oxide-semiconductor field-effect transistor having enhanced high-frequency performance |
| US11222892B2 (en) * | 2020-06-15 | 2022-01-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside power rail and methods of forming the same |
-
2023
- 2023-02-10 US US18/699,821 patent/US12142678B2/en active Active
- 2023-02-10 TW TW112104689A patent/TWI838119B/zh active
- 2023-02-10 CN CN202380013901.1A patent/CN118056281B/zh active Active
- 2023-02-10 WO PCT/JP2023/004664 patent/WO2023162735A1/ja not_active Ceased
- 2023-02-10 JP JP2023544601A patent/JP7393593B1/ja active Active
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