JPWO2022079962A5 - - Google Patents
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- Publication number
- JPWO2022079962A5 JPWO2022079962A5 JP2021576608A JP2021576608A JPWO2022079962A5 JP WO2022079962 A5 JPWO2022079962 A5 JP WO2022079962A5 JP 2021576608 A JP2021576608 A JP 2021576608A JP 2021576608 A JP2021576608 A JP 2021576608A JP WO2022079962 A5 JPWO2022079962 A5 JP WO2022079962A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal layer
- group
- nitride
- semiconductor ingot
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 14
- 239000013078 crystal Substances 0.000 claims 12
- 229910052795 boron group element Inorganic materials 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000005477 sputtering target Methods 0.000 claims 2
- 230000004907 flux Effects 0.000 claims 1
- 238000007716 flux method Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020173913 | 2020-10-15 | ||
| JP2020173913 | 2020-10-15 | ||
| PCT/JP2021/026080 WO2022079962A1 (ja) | 2020-10-15 | 2021-07-12 | １３族元素窒化物結晶層の育成方法、窒化物半導体インゴットおよびスパッタリングターゲット |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022079962A1 JPWO2022079962A1 (https=) | 2022-04-21 |
| JPWO2022079962A5 true JPWO2022079962A5 (https=) | 2022-10-04 |
| JP7675663B2 JP7675663B2 (ja) | 2025-05-13 |
Family
ID=81207915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021576608A Active JP7675663B2 (ja) | 2020-10-15 | 2021-07-12 | １３族元素窒化物結晶層の育成方法、窒化物半導体インゴットおよびスパッタリングターゲット |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230250555A1 (https=) |
| JP (1) | JP7675663B2 (https=) |
| CN (1) | CN116348631A (https=) |
| WO (1) | WO2022079962A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121057718A (zh) | 2023-05-09 | 2025-12-02 | 日本碍子株式会社 | 接合体 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5897790B2 (ja) * | 2009-10-22 | 2016-03-30 | 日本碍子株式会社 | ３ｂ族窒化物単結晶及びその製法 |
| JP5446945B2 (ja) * | 2010-02-01 | 2014-03-19 | 日亜化学工業株式会社 | 窒化物半導体単結晶及び窒化物半導体基板の製造方法 |
| JP2018043893A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社リコー | １３族窒化物結晶の製造方法及び１３族窒化物結晶基板の製造方法 |
| JP6861522B2 (ja) * | 2017-01-23 | 2021-04-21 | 株式会社サイオクス | 多結晶ｉｉｉ族窒化物ターゲットおよびその製造方法 |
| JP2017100944A (ja) * | 2017-02-22 | 2017-06-08 | 株式会社リコー | １３族窒化物結晶および１３族窒化物結晶基板 |
| US10242868B1 (en) * | 2017-09-26 | 2019-03-26 | Sixpoint Materials, Inc. | Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method |
| TWI825187B (zh) * | 2018-10-09 | 2023-12-11 | 日商東京威力科創股份有限公司 | 氮化物半導體膜之形成方法 |
-
2021
- 2021-07-12 CN CN202180069232.0A patent/CN116348631A/zh active Pending
- 2021-07-12 WO PCT/JP2021/026080 patent/WO2022079962A1/ja not_active Ceased
- 2021-07-12 JP JP2021576608A patent/JP7675663B2/ja active Active
-
2023
- 2023-04-14 US US18/300,774 patent/US20230250555A1/en active Pending
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