CN116348631A - 13族元素氮化物结晶层的培养方法、氮化物半导体铸锭以及溅射靶 - Google Patents

13族元素氮化物结晶层的培养方法、氮化物半导体铸锭以及溅射靶 Download PDF

Info

Publication number
CN116348631A
CN116348631A CN202180069232.0A CN202180069232A CN116348631A CN 116348631 A CN116348631 A CN 116348631A CN 202180069232 A CN202180069232 A CN 202180069232A CN 116348631 A CN116348631 A CN 116348631A
Authority
CN
China
Prior art keywords
group
crystal layer
nitride
nitride semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180069232.0A
Other languages
English (en)
Chinese (zh)
Inventor
仓冈义孝
野中健太朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN116348631A publication Critical patent/CN116348631A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180069232.0A 2020-10-15 2021-07-12 13族元素氮化物结晶层的培养方法、氮化物半导体铸锭以及溅射靶 Pending CN116348631A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173913 2020-10-15
JP2020-173913 2020-10-15
PCT/JP2021/026080 WO2022079962A1 (ja) 2020-10-15 2021-07-12 １３族元素窒化物結晶層の育成方法、窒化物半導体インゴットおよびスパッタリングターゲット

Publications (1)

Publication Number Publication Date
CN116348631A true CN116348631A (zh) 2023-06-27

Family

ID=81207915

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180069232.0A Pending CN116348631A (zh) 2020-10-15 2021-07-12 13族元素氮化物结晶层的培养方法、氮化物半导体铸锭以及溅射靶

Country Status (4)

Country Link
US (1) US20230250555A1 (https=)
JP (1) JP7675663B2 (https=)
CN (1) CN116348631A (https=)
WO (1) WO2022079962A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121057718A (zh) 2023-05-09 2025-12-02 日本碍子株式会社 接合体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011105586A (ja) * 2009-10-22 2011-06-02 Ngk Insulators Ltd ３ｂ族窒化物単結晶及びその製法
JP2011157231A (ja) * 2010-02-01 2011-08-18 Nichia Corp 窒化物半導体単結晶及び窒化物半導体基板の製造方法
JP2017100944A (ja) * 2017-02-22 2017-06-08 株式会社リコー １３族窒化物結晶および１３族窒化物結晶基板
JP2018119171A (ja) * 2017-01-23 2018-08-02 株式会社サイオクス 多結晶ｉｉｉ族窒化物ターゲットおよびその製造方法
US10242868B1 (en) * 2017-09-26 2019-03-26 Sixpoint Materials, Inc. Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018043893A (ja) * 2016-09-12 2018-03-22 株式会社リコー １３族窒化物結晶の製造方法及び１３族窒化物結晶基板の製造方法
TWI825187B (zh) * 2018-10-09 2023-12-11 日商東京威力科創股份有限公司 氮化物半導體膜之形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011105586A (ja) * 2009-10-22 2011-06-02 Ngk Insulators Ltd ３ｂ族窒化物単結晶及びその製法
JP2011157231A (ja) * 2010-02-01 2011-08-18 Nichia Corp 窒化物半導体単結晶及び窒化物半導体基板の製造方法
JP2018119171A (ja) * 2017-01-23 2018-08-02 株式会社サイオクス 多結晶ｉｉｉ族窒化物ターゲットおよびその製造方法
JP2017100944A (ja) * 2017-02-22 2017-06-08 株式会社リコー １３族窒化物結晶および１３族窒化物結晶基板
US10242868B1 (en) * 2017-09-26 2019-03-26 Sixpoint Materials, Inc. Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

Also Published As

Publication number Publication date
JP7675663B2 (ja) 2025-05-13
US20230250555A1 (en) 2023-08-10
WO2022079962A1 (ja) 2022-04-21
JPWO2022079962A1 (https=) 2022-04-21

Similar Documents

Publication Publication Date Title
KR101582021B1 (ko) 복합 기판, 그 제조 방법, 13족 원소 질화물로 이루어진 기능층의 제조 방법 및 기능 소자
JP5241855B2 (ja) Ｉｉｉ族窒化物ウエハを製造する方法およびｉｉｉ族窒化物ウエハ
CN108884594B (zh) 晶种基板的制造方法、13族元素氮化物结晶的制造方法及晶种基板
JP7117690B2 (ja) Ｉｉｉ－ｖ族化合物結晶の製造方法および半導体装置の製造方法
JP6526811B2 (ja) Ｉｉｉ族窒化物結晶を加工する方法
US20230250555A1 (en) Group 13 element nitride crystal layer growth method, nitride semiconductor ingot and sputtering target
JP7264343B2 (ja) Ｉｉｉ族窒化物結晶の製造方法および種基板
JP7796020B2 (ja) 高品質なヘテロエピタキシャル単斜晶ガリウム酸化物結晶の成長方法
CN107794567B (zh) 用于制造iii族氮化物半导体的方法
US11437233B2 (en) Base substrate, functional element, and method for manufacturing base substrate
US11245054B2 (en) Base substrate, functional element, and production method for base substrate
JP7855059B2 (ja) Ｉｉｉ族元素窒化物基板およびｉｉｉ族元素窒化物基板の製造方法
JP7855060B2 (ja) Ｉｉｉ族元素窒化物基板およびｉｉｉ族元素窒化物基板の製造方法
TWI894609B (zh) Iii族元素氮化物基板之製造方法
JP2006103997A (ja) 半導体結晶の製造方法
WO2025196855A1 (ja) Ｉｉｉ族元素窒化物基板、貼合せ基板、半導体素子およびｉｉｉ族元素窒化物基板の製造方法
WO2025120853A1 (ja) Ｉｉｉ族元素窒化物基板、半導体素子、ｉｉｉ族元素窒化物基板の加工方法および半導体素子の製造方法
WO2026083764A1 (ja) 基板セット、単結晶基板、基板セットの製造方法および半導体素子の製造方法
JP2010265131A (ja) 窒化物単結晶の製造方法
WO2023157374A1 (ja) １３族元素窒化物単結晶基板を有する積層体
WO2023188742A1 (ja) １３族元素窒化物単結晶基板
CN120712386A (zh) Iii族元素氮化物基板及iii族元素氮化物基板的制造方法
JP2018127385A (ja) Ｉｉｉ族窒化物半導体の製造方法
JP2010222192A (ja) 窒化物単結晶の製造方法、テンプレート基板、および窒化物単結晶基板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination