WO2019186266A3 - Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain - Google Patents

Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain Download PDF

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Publication number
WO2019186266A3
WO2019186266A3 PCT/IB2019/000205 IB2019000205W WO2019186266A3 WO 2019186266 A3 WO2019186266 A3 WO 2019186266A3 IB 2019000205 W IB2019000205 W IB 2019000205W WO 2019186266 A3 WO2019186266 A3 WO 2019186266A3
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WO
WIPO (PCT)
Prior art keywords
crystal film
aln material
producing
epitaxial growth
substrate
Prior art date
Application number
PCT/IB2019/000205
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English (en)
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WO2019186266A2 (fr
Inventor
Bruno Ghyselen
Original Assignee
Soitec
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Filing date
Publication date
Application filed by Soitec filed Critical Soitec
Priority to CN201980021416.2A priority Critical patent/CN111902571A/zh
Priority to SG11202009411SA priority patent/SG11202009411SA/en
Priority to US17/041,371 priority patent/US20210032772A1/en
Priority to JP2020549815A priority patent/JP7451846B2/ja
Priority to EP19759725.5A priority patent/EP3775333A2/fr
Priority to KR1020207030232A priority patent/KR102640296B1/ko
Publication of WO2019186266A2 publication Critical patent/WO2019186266A2/fr
Publication of WO2019186266A3 publication Critical patent/WO2019186266A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procédé de fabrication d'une couche monocristalline de matériau AIN comprenant le transfert d'une couche germe monocristalline de matériau SiC-6H sur un substrat support de matériau silicium suivi d'une croissance par épitaxie de la couche monocristalline de matériau AIN.
PCT/IB2019/000205 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain WO2019186266A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201980021416.2A CN111902571A (zh) 2018-03-28 2019-03-26 AlN材料单晶层的制造方法和外延生长AlN材料单晶膜的衬底
SG11202009411SA SG11202009411SA (en) 2018-03-28 2019-03-26 Method for producing a single-crystal film of aln material and substrate for the epitaxial growth of a single-crystal film of aln material
US17/041,371 US20210032772A1 (en) 2018-03-28 2019-03-26 Method for producing a single-crystal film of aln material and substrate for the epitaxial growth of a single-crystal film of aln material
JP2020549815A JP7451846B2 (ja) 2018-03-28 2019-03-26 ＡｌＮ材料の単結晶膜を生成するための方法、及びＡｌＮ材料の単結晶膜をエピタキシャル成長させるための基板
EP19759725.5A EP3775333A2 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain
KR1020207030232A KR102640296B1 (ko) 2018-03-28 2019-03-26 AlN 재질의 단결정 층을 제조하는 방법 및 AlN 재질의 단결정 층의 에피택셜 성장을 위한 기판

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800254A FR3079532B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
FR1800254 2018-03-28

Publications (2)

Publication Number Publication Date
WO2019186266A2 WO2019186266A2 (fr) 2019-10-03
WO2019186266A3 true WO2019186266A3 (fr) 2019-11-21

Family

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PCT/IB2019/000205 WO2019186266A2 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain

Country Status (8)

Country Link
US (1) US20210032772A1 (fr)
EP (1) EP3775333A2 (fr)
JP (1) JP7451846B2 (fr)
KR (1) KR102640296B1 (fr)
CN (1) CN111902571A (fr)
FR (1) FR3079532B1 (fr)
SG (1) SG11202009411SA (fr)
WO (1) WO2019186266A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210390A1 (fr) * 2020-04-14 2021-10-21 学校法人関西学院 Procédé de production d'un substrat semi-conducteur, substrat semi-conducteur et procédé de prévention de l'apparition de fissures dans une couche de croissance
EP4137614A4 (fr) * 2020-04-14 2024-05-22 Kwansei Gakuin Educational Found Procédé de production de substrat de nitrure d'aluminium, substrat de nitrure d'aluminium et procédé pour supprimer l'apparition de fissures dans une couche de nitrure d'aluminium

Citations (2)

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EP1468445A2 (fr) * 2002-01-23 2004-10-20 S.O.I.Tec Silicon on Insulator Technologies Procede optimise pour transferer une couche mince de carbure de silicium sur un substrat de reception
US20110171812A1 (en) * 2000-11-27 2011-07-14 Fabrice Letertre Fabrication of substrates with a useful layer of monocrystalline semiconductor material

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CA2220600C (fr) * 1996-11-15 2002-02-12 Canon Kabushiki Kaisha Methode de fabrication d'articles a semi-conducteur
SG67458A1 (en) * 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
FR2767604B1 (fr) * 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
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FR2857982B1 (fr) 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
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EP1468445A2 (fr) * 2002-01-23 2004-10-20 S.O.I.Tec Silicon on Insulator Technologies Procede optimise pour transferer une couche mince de carbure de silicium sur un substrat de reception

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Also Published As

Publication number Publication date
WO2019186266A2 (fr) 2019-10-03
FR3079532B1 (fr) 2022-03-25
EP3775333A2 (fr) 2021-02-17
KR102640296B1 (ko) 2024-02-22
JP2021518324A (ja) 2021-08-02
FR3079532A1 (fr) 2019-10-04
SG11202009411SA (en) 2020-10-29
CN111902571A (zh) 2020-11-06
US20210032772A1 (en) 2021-02-04
JP7451846B2 (ja) 2024-03-19
KR20200138284A (ko) 2020-12-09

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