SG11201805403RA - Method for fabrication of a monocrystalline piezoelectric layer and microelectronic, photonic or optical device comprising such a layer - Google Patents
Method for fabrication of a monocrystalline piezoelectric layer and microelectronic, photonic or optical device comprising such a layerInfo
- Publication number
- SG11201805403RA SG11201805403RA SG11201805403RA SG11201805403RA SG11201805403RA SG 11201805403R A SG11201805403R A SG 11201805403RA SG 11201805403R A SG11201805403R A SG 11201805403RA SG 11201805403R A SG11201805403R A SG 11201805403RA SG 11201805403R A SG11201805403R A SG 11201805403RA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- photonic
- microelectronic
- fabrication
- optical device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000004377 microelectronic Methods 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 210000001654 germ layer Anatomy 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000407 epitaxy Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
METHOD FOR FABRICATION OF A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER The invention relates to a method of fabricating a layer (10) of a monocrystalline piezoelectric layer, characterised in that it comprises: - the supply of a donor substrate (100) of said piezoelectric material, - the supply of a receiving substrate (110), - the transfer of a layer called a “germ layer” (102) from said donor substrate (100) onto the receiving substrate (110), - implementation of an epitaxy of the piezoelectric material on the germ layer (102) until the required thickness for the monocrystalline piezoelectric layer (10) is obtained. Figure 3E
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1563057A FR3045678B1 (en) | 2015-12-22 | 2015-12-22 | METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER |
PCT/EP2016/082259 WO2017109005A1 (en) | 2015-12-22 | 2016-12-21 | Method for manufacturing a monocrystalline piezoelectric layer, and microelectronic, photonic, or optical device including such a layer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805403RA true SG11201805403RA (en) | 2018-07-30 |
Family
ID=55590009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201805403RA SG11201805403RA (en) | 2015-12-22 | 2016-12-21 | Method for fabrication of a monocrystalline piezoelectric layer and microelectronic, photonic or optical device comprising such a layer |
Country Status (8)
Country | Link |
---|---|
US (2) | US11600766B2 (en) |
EP (1) | EP3394323A1 (en) |
JP (2) | JP6812443B2 (en) |
KR (1) | KR102654808B1 (en) |
CN (2) | CN114242885A (en) |
FR (1) | FR3045678B1 (en) |
SG (1) | SG11201805403RA (en) |
WO (1) | WO2017109005A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210100513A1 (en) * | 2018-02-20 | 2021-04-08 | Ip2Ipo Innovations Limited | An apparatus and method |
FR3079346B1 (en) * | 2018-03-26 | 2020-05-29 | Soitec | METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER |
FR3079345B1 (en) | 2018-03-26 | 2020-02-21 | Soitec | METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE |
FR3108439B1 (en) * | 2020-03-23 | 2022-02-11 | Soitec Silicon On Insulator | PROCESS FOR MANUFACTURING A STACKED STRUCTURE |
FR3137792A1 (en) * | 2022-07-07 | 2024-01-12 | Soitec | Process for manufacturing a semiconductor or piezoelectric structure |
CN117156947B (en) * | 2023-10-31 | 2024-02-20 | 北京青禾晶元半导体科技有限责任公司 | Preparation method of composite piezoelectric substrate |
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JPH08153915A (en) * | 1994-11-30 | 1996-06-11 | Matsushita Electric Ind Co Ltd | Composite piezoelectric substrate and its manufacture |
CN1048126C (en) | 1994-12-06 | 2000-01-05 | 株式会社村田制作所 | Electrode forming method for surface acoustic wave device |
US5935641A (en) * | 1996-10-23 | 1999-08-10 | Texas Instruments Incorporated | Method of forming a piezoelectric layer with improved texture |
US6120597A (en) | 1998-02-17 | 2000-09-19 | The Trustees Of Columbia University In The City Of New York | Crystal ion-slicing of single-crystal films |
US6540827B1 (en) | 1998-02-17 | 2003-04-01 | Trustees Of Columbia University In The City Of New York | Slicing of single-crystal films using ion implantation |
JP3704017B2 (en) | 2000-03-28 | 2005-10-05 | ヤマハ株式会社 | Surface acoustic wave device |
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US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
FR2845523B1 (en) | 2002-10-07 | 2005-10-28 | METHOD FOR MAKING A SUBSTRATE BY TRANSFERRING A DONOR WAFER HAVING FOREIGN SPECIES, AND ASSOCIATED DONOR WAFER | |
FR2847076B1 (en) | 2002-11-07 | 2005-02-18 | Soitec Silicon On Insulator | METHOD OF DETACHING A THIN LAYER AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION |
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JP5110092B2 (en) | 2007-12-25 | 2012-12-26 | 株式会社村田製作所 | Manufacturing method of composite piezoelectric substrate |
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FR2951336B1 (en) | 2009-10-09 | 2017-02-10 | Commissariat A L'energie Atomique | ACOUSTIC WAVE DEVICE COMPRISING A SURFACE WAVE FILTER AND A VOLUME WAVE FILTER AND METHOD OF MANUFACTURE |
JP5429200B2 (en) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | Method for manufacturing composite piezoelectric substrate and piezoelectric device |
JP2012106902A (en) | 2010-10-25 | 2012-06-07 | Fujifilm Corp | Perovskite-type oxide film, ferroelectric film using the same, ferroelectric device, and method for manufacturing perovskite-type oxide film |
JP5811173B2 (en) | 2011-03-22 | 2015-11-11 | 株式会社村田製作所 | Method for manufacturing piezoelectric device |
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2015
- 2015-12-22 FR FR1563057A patent/FR3045678B1/en active Active
-
2016
- 2016-12-21 SG SG11201805403RA patent/SG11201805403RA/en unknown
- 2016-12-21 US US16/064,420 patent/US11600766B2/en active Active
- 2016-12-21 CN CN202111570629.6A patent/CN114242885A/en active Pending
- 2016-12-21 JP JP2018532615A patent/JP6812443B2/en active Active
- 2016-12-21 KR KR1020187021277A patent/KR102654808B1/en active IP Right Grant
- 2016-12-21 EP EP16819091.6A patent/EP3394323A1/en active Pending
- 2016-12-21 WO PCT/EP2016/082259 patent/WO2017109005A1/en active Application Filing
- 2016-12-21 CN CN201680081355.5A patent/CN108603306A/en active Pending
-
2020
- 2020-12-04 JP JP2020202217A patent/JP7200199B2/en active Active
-
2023
- 2023-03-06 US US18/179,071 patent/US20230217832A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3045678B1 (en) | 2017-12-22 |
FR3045678A1 (en) | 2017-06-23 |
JP2019506782A (en) | 2019-03-07 |
JP7200199B2 (en) | 2023-01-06 |
CN108603306A (en) | 2018-09-28 |
WO2017109005A1 (en) | 2017-06-29 |
EP3394323A1 (en) | 2018-10-31 |
JP2021048624A (en) | 2021-03-25 |
US20190006577A1 (en) | 2019-01-03 |
KR102654808B1 (en) | 2024-04-05 |
KR20180098344A (en) | 2018-09-03 |
JP6812443B2 (en) | 2021-01-13 |
US20230217832A1 (en) | 2023-07-06 |
CN114242885A (en) | 2022-03-25 |
US11600766B2 (en) | 2023-03-07 |
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