JPWO2022054327A1 - - Google Patents

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Publication number
JPWO2022054327A1
JPWO2022054327A1 JP2022547390A JP2022547390A JPWO2022054327A1 JP WO2022054327 A1 JPWO2022054327 A1 JP WO2022054327A1 JP 2022547390 A JP2022547390 A JP 2022547390A JP 2022547390 A JP2022547390 A JP 2022547390A JP WO2022054327 A1 JPWO2022054327 A1 JP WO2022054327A1
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JP
Japan
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JP2022547390A
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Japanese (ja)
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JPWO2022054327A5 (https=
JP7435804B2 (ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/936—Multiple bond pads having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476—Organic materials comprising silicon
JP2022547390A 2020-09-11 2021-04-08 半導体装置 Active JP7435804B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020152944 2020-09-11
JP2020152944 2020-09-11
PCT/JP2021/014967 WO2022054327A1 (ja) 2020-09-11 2021-04-08 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022054327A1 true JPWO2022054327A1 (https=) 2022-03-17
JPWO2022054327A5 JPWO2022054327A5 (https=) 2022-11-02
JP7435804B2 JP7435804B2 (ja) 2024-02-21

Family

ID=80631516

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JP2022547391A Active JP7420270B2 (ja) 2020-09-11 2021-04-08 半導体装置
JP2022547390A Active JP7435804B2 (ja) 2020-09-11 2021-04-08 半導体装置
JP2024002288A Active JP7782593B2 (ja) 2020-09-11 2024-01-11 半導体装置

Family Applications Before (1)

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JP2022547391A Active JP7420270B2 (ja) 2020-09-11 2021-04-08 半導体装置

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JP2024002288A Active JP7782593B2 (ja) 2020-09-11 2024-01-11 半導体装置

Country Status (5)

Country Link
US (3) US12165998B2 (https=)
JP (3) JP7420270B2 (https=)
CN (2) CN115176344A (https=)
DE (2) DE112021000466T5 (https=)
WO (2) WO2022054327A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7586796B2 (ja) 2021-09-21 2024-11-19 株式会社東芝 半導体装置及び半導体装置の製造方法
US20260092763A1 (en) * 2023-09-22 2026-04-02 Excelitas Technologies Corp. Detonator with integrated solid-state fireset

Citations (5)

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JPH04100276A (ja) * 1989-12-29 1992-04-02 Nec Corp 電流検出端子付ｍｏｓ　ｆｅｔおよびその製造方法
JP2014192351A (ja) * 2013-03-27 2014-10-06 Mitsubishi Electric Corp 半導体装置の製造方法
WO2017168735A1 (ja) * 2016-03-31 2017-10-05 新電元工業株式会社 パワー半導体装置及びパワー半導体装置の製造方法
WO2019176327A1 (ja) * 2018-03-15 2019-09-19 富士電機株式会社 半導体装置
JP2020098881A (ja) * 2018-12-19 2020-06-25 富士電機株式会社 半導体装置

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US5153696A (en) 1989-12-29 1992-10-06 Nec Corporation MOS FET with current sensing terminal
JP3551947B2 (ja) * 2001-08-29 2004-08-11 サンケン電気株式会社 半導体装置及びその製造方法
JP4205914B2 (ja) * 2002-08-27 2009-01-07 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
JP4791015B2 (ja) * 2004-09-29 2011-10-12 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔ
JP2007227556A (ja) 2006-02-22 2007-09-06 Nec Electronics Corp 半導体装置
JP4600563B2 (ja) * 2007-10-24 2010-12-15 株式会社デンソー 半導体装置及びその製造方法
JP5101575B2 (ja) * 2009-07-28 2012-12-19 株式会社東芝 半導体装置およびその製造方法
JP2011044503A (ja) * 2009-08-19 2011-03-03 Sharp Corp 半導体装置の製造方法、及び、半導体装置
JP2012244071A (ja) * 2011-05-23 2012-12-10 Semiconductor Components Industries Llc 絶縁ゲート型半導体装置
US9209109B2 (en) * 2013-07-15 2015-12-08 Infineon Technologies Ag IGBT with emitter electrode electrically connected with an impurity zone
JP2016004877A (ja) 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
DE102014117780B4 (de) * 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
WO2016114057A1 (ja) * 2015-01-16 2016-07-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2017022311A (ja) 2015-07-14 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置
WO2017029748A1 (ja) * 2015-08-20 2017-02-23 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両
JP6832645B2 (ja) * 2016-07-20 2021-02-24 ローム株式会社 半導体装置
JP6704057B2 (ja) 2016-09-20 2020-06-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6941502B2 (ja) * 2016-09-30 2021-09-29 ローム株式会社 半導体装置および半導体パッケージ
JP2018152514A (ja) 2017-03-14 2018-09-27 富士電機株式会社 半導体装置の製造方法および半導体装置
WO2018167925A1 (ja) * 2017-03-16 2018-09-20 三菱電機株式会社 半導体装置
JP6994991B2 (ja) * 2018-03-16 2022-02-04 株式会社 日立パワーデバイス 半導体装置、パワーモジュールおよび電力変換装置
JP7283036B2 (ja) * 2018-07-13 2023-05-30 富士電機株式会社 半導体装置および製造方法
JP7073984B2 (ja) 2018-08-23 2022-05-24 株式会社デンソー 半導体装置
JP2020035847A (ja) 2018-08-29 2020-03-05 トヨタ自動車株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04100276A (ja) * 1989-12-29 1992-04-02 Nec Corp 電流検出端子付ｍｏｓ　ｆｅｔおよびその製造方法
JP2014192351A (ja) * 2013-03-27 2014-10-06 Mitsubishi Electric Corp 半導体装置の製造方法
WO2017168735A1 (ja) * 2016-03-31 2017-10-05 新電元工業株式会社 パワー半導体装置及びパワー半導体装置の製造方法
WO2019176327A1 (ja) * 2018-03-15 2019-09-19 富士電機株式会社 半導体装置
JP2020098881A (ja) * 2018-12-19 2020-06-25 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
CN115176344A (zh) 2022-10-11
US20220392858A1 (en) 2022-12-08
JP2024038324A (ja) 2024-03-19
US20220392815A1 (en) 2022-12-08
CN115152034A (zh) 2022-10-04
DE112021000466T5 (de) 2022-10-27
JPWO2022054328A1 (https=) 2022-03-17
US12165998B2 (en) 2024-12-10
JP7420270B2 (ja) 2024-01-23
WO2022054327A1 (ja) 2022-03-17
DE112021000458T5 (de) 2022-10-27
US12431448B2 (en) 2025-09-30
CN115152034B (zh) 2026-04-17
JP7782593B2 (ja) 2025-12-09
WO2022054328A1 (ja) 2022-03-17
US20250096169A1 (en) 2025-03-20
JP7435804B2 (ja) 2024-02-21

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