JPWO2021097121A5 - - Google Patents

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JPWO2021097121A5
JPWO2021097121A5 JP2022528071A JP2022528071A JPWO2021097121A5 JP WO2021097121 A5 JPWO2021097121 A5 JP WO2021097121A5 JP 2022528071 A JP2022528071 A JP 2022528071A JP 2022528071 A JP2022528071 A JP 2022528071A JP WO2021097121 A5 JPWO2021097121 A5 JP WO2021097121A5
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先述は、本開示の特定の実施形態を参照しているが、この実施形態における変更は、本開示の原則及び趣旨から逸脱することなくなされ得、本開示の範囲は、添付の請求項によって規定されるということは当業者により理解されるものとする。
本発明は、以下の態様を含んでいる。
（１）ウェハレベル又はパッケージレベルＩＣ半導体デバイス試験のために使用される試験インターフェースの接触素子及び支持構造体を清浄するための機能化面を伴う清浄材であって、前記清浄材は、
複数の機能化された微細特徴部を有する清浄媒体であって、前記複数の機能化された微細特徴部の各々が本体部を有し、前記本体部は、接触領域及び周囲の支持ハードウェアが変更又は損傷なしに清浄されるように前記清浄媒体を最適化する、幅、高さ、各本体部間の間隔、及び寸法特性を有し、各微細特徴部は、前記清浄媒体の上面から離れる方へ延び、前記清浄媒体は、各微細特徴部の前記本体部内に均一に分布される７以上のモース硬度を有する複数の研磨粒子を有する、清浄媒体と、
前記ピン接触素子及び支持ハードウェアから汚染物を清浄する予め決められた特徴を有する、前記清浄媒体の前記上面にわたって適用される清浄層と、
前記清浄媒体の下の１つ又は複数の中間剛性又はコンプライアント下層であって、各下層は、４０ＭＰａ超～６００ＭＰａの範囲の弾性係数を有し、各層は、２５μｍ～３００μｍの厚さを有し、各層は、３０ショアＡ～９０ショアＡの硬度を有する、１つ又は複数の中間剛性又はコンプライアント下層と
を備える、清浄材。
（２）前記複数の機能化された微細特徴部は、前記清浄媒体にわたって１つ又は均一に成形され、前記清浄媒体にわたって可変に離間される、（１）に記載の清浄材。
（３）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数の種類の粒子をさらに含む、（１）に記載の清浄材。
（４）前記清浄層は、予め決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する１０～１００μｍ厚であるポリマー層をさらに備える、（１）に記載の清浄材。
（５）前記清浄層は、前記清浄媒体の上面にわたって、１０～１００μｍ厚の、７以上のモース硬度を有する複数の研磨粒子を有する研磨ポリマーの層をさらに備える、（１）に記載の清浄材。
（６）それぞれの微細特徴部が、前記清浄媒体の上面から上方に離れて延びる正の微細特徴部をさらに含む、（１）に記載の清浄材。
（７）それぞれの正の微細特徴部は、マイクロピラミッド、マイクロカラム、及び湾曲マイクロピラミッドのうちの１つである、（６）に記載の清浄材。
（８）前記清浄層は、各正の微細特徴部の本体部を覆って適用され、各正の微細特徴部の本体部は、表側を有し、前記清浄層は、各正の微細特徴部の前記表側を覆って適用される、（６）に記載の清浄材。
（９）前記清浄層は、各正の微細特徴部の上面にわたって、及び各正の微細特徴部の前記本体部に沿って適用される、１０μｍ未満の厚さで７以上のモース硬度を有する複数の研磨粒子をさらに含む、（６）に記載の清浄材。
（１０）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物である、（９）に記載の清浄材。
（１１）各微細特徴部は、前記清浄媒体の前記上面から離れる方へ下方に延びる負の微細特徴部をさらに備える、（１）に記載の清浄材。
（１２）各負の微細特徴部は、マイクロピラミッド、マイクロカラム、及び湾曲マイクロピラミッドのうちの１つである、（１１）に記載の清浄材。
（１３）前記清浄層は、前記清浄媒体の前記上面にわたって、及び各負の微細特徴部の腔内へ、及び各負の微細特徴部の内面に沿って、適用される、（１１）に記載の清浄材。
（１４）前記清浄層は、前記清浄媒体の前記上面にわたって、及び各負の微細特徴部の腔内へ、及び各負の微細特徴部の内面に沿って適用される、１０μｍ未満の厚さで７以上のモース硬度を有する複数の研磨粒子をさらに含む、（１１）に記載の清浄材。
（１５）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物である、（１４）に記載の清浄材。
（１６）ウェハレベル又はパッケージレベルＩＣ半導体デバイス試験のために使用される試験インターフェースの接触素子及び支持構造体を清浄するための方法であって、
前記ウェハレベル又はパッケージレベルＩＣ半導体デバイスの試験動作を実施することと、
清浄デバイスを使用して清浄動作を実施することと、を含み、前記清浄デバイスは、複数の機能化された微細特徴部を有する清浄媒体であって、前記複数の機能化された微細特徴部の各々が本体部を有し、前記本体部は、接触領域及び周囲の支持ハードウェアが変更又は損傷なしに清浄されるように前記清浄媒体を最適化する幅、高さ、各本体部間の間隔、及び寸法特性を有し、各微細特徴部は、前記清浄媒体の上面から離れる方へ延び、前記清浄媒体は、各微細特徴部の前記本体部内に均一に分布される７以上のモース硬度を有する複数の研磨粒子を有する、清浄媒体と、前記ピン接触素子及び支持ハードウェアから汚染物を清浄する予め決められた特徴を有する、前記清浄媒体の前記上面にわたって適用される清浄層と、前記清浄媒体の下の１つ又は複数の中間剛性又はコンプライアント下層であって、各下層は、４０ＭＰａ超～６００ＭＰａの範囲の弾性係数を有し、各層は、２５μｍ～３００μｍの厚さを有し、各層は、３０ショアＡ～９０ショアＡの硬度を有する、１つ又は複数の中間剛性又はコンプライアント下層と、を有する、方法。
（１７）前記清浄デバイスを使用して清浄動作を実施することは、予め決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する１０～１００μｍ厚であるポリマー層を使用することをさらに含む、（１６）に記載の方法。
（１８）前記清浄デバイスを使用して清浄動作を実施することは、前記清浄媒体の前記上面から離れる方へ上方に延びる複数の正の微細特徴部を使用することをさらに含む、（１６）に記載の方法。
（１９）前記清浄デバイスを使用して清浄動作を実施することは、前記清浄媒体の上面から離れる方へ下方に延びる複数の負の微細特徴部を使用することをさらに含む、（１６）に記載の方法。
（２０）半導体試験装置内のピン接触素子及び支持ハードウェアを清浄するための清浄デバイスであって、
試験下の半導体デバイスのはんだボール、ピラー、銅ピラーバンプ、及び／又は金バンプに倣った複数の幾何学的面特徴部を伴う清浄媒体であって、前記清浄ボール及び清浄ピラーは、試験インターフェースの接触素子及び支持構造体を清浄するための、前記特徴部内に分布され、７以上のモース硬度を有する複数の研磨粒子からさらになる、清浄媒体と、
前記ピン接触素子及び支持ハードウェアから汚染物を清浄する予め決められた特徴を有する、各幾何学的面特徴の上面にわたって、及び各幾何学的面特徴の側面に沿って適用される、清浄層と、
前記試験装置の通常試験動作中、前記試験装置内に導入されるのに好適な構成を有する、前記清浄媒体が装着される基板であって、サロゲート半導体ウェハ又はパッケージ化ＩＣデバイスを備える、基板と
を備える、清浄デバイス。
（２１）各幾何学的面特徴の、前記上面にわたって、及び前記側面に沿って、適用される複数の研磨粒子をさらに備える、（２０）に記載の清浄デバイス。
（２２）前記清浄層は、決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する、１０～１００μｍ厚を有するポリマーの層をさらに備える、（２０）に記載の清浄デバイス。
（２３）前記清浄層は、１０μｍ～１００μｍの厚さで、７以上のモース硬度を有する複数の研磨粒子を伴う研磨ポリマーの層をさらに備える、（２０）に記載の清浄デバイス。
（２４）前記清浄層は、１０μｍ未満の厚さで７以上のモース硬度を有する、複数の研磨粒子を伴う研磨ポリマーの層をさらに備える、（２０）に記載の清浄デバイス。
（２５）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物をさらに含む、（２４）に記載の清浄デバイス。
（２６）半導体試験装置内のピン接触素子及び支持ハードウェアを清浄するための方法であって、
はんだボール、ピラー、銅ピラーバンプ、及び金バンプのうちの１つの予め決められた構成を有する試験下のデバイスの試験を実施することと、
清浄デバイスを使用して前記ピン接触素子及び支持ハードウェアの清浄を実施することと、を含み、前記清浄デバイスは、模倣する複数の幾何学的面特徴部を伴う清浄媒体であって、前記清浄ボール及び清浄ピラーは、試験インターフェースの接触素子及び支持構造体を清浄するための、前記特徴部内に分布され、７以上のモース硬度を有する複数の研磨粒子からさらになる、清浄媒体と、前記ピン接触素子及び支持ハードウェアから汚染物を清浄する予め決められた特徴を有する、各幾何学的面特徴の上面にわたって、及び各幾何学的面特徴の側面に沿って適用される、清浄層と、前記試験装置の通常試験動作中、前記試験装置内に導入されるのに好適な構成を有する、前記清浄媒体が装着される基板であって、サロゲート半導体ウェハ又はパッケージ化ＩＣデバイスを備える、基板と、を有する、方法。
（２７）ワイヤボンディング装置の毛細管チューブを清浄するための機能化面を伴う清浄材であって、
複数の機能化された微細特徴部を有する清浄媒体であって、前記複数の機能化された微細特徴部の各々が本体部を有し、前記本体部は、接触領域及び周囲の支持ハードウェアが変更又は損傷なしに清浄されるように前記清浄媒体を最適化する、幅、高さ、各本体部間の間隔、及び寸法特性を有し、各微細特徴部は、前記清浄媒体の上面から離れる方へ延び、前記清浄媒体は、各微細特徴部の前記本体部内に均一に分布される７以上のモース硬度を有する複数の研磨粒子を有する、清浄媒体と、
前記毛細管チューブの１つ又は複数の面から汚染物を清浄する予め決められた特徴を有する、前記清浄媒体の前記上面にわたって適用される清浄層と、
前記清浄媒体の下の１つ又は複数の中間剛性又はコンプライアント下層であって、各下層は、４０ＭＰａ超～６００ＭＰａの範囲の弾性係数を有し、各層は、２５μｍ～３００μｍの厚さを有し、各層は、３０ショアＡ～９０ショアＡの硬度を有する、１つ又は複数の中間剛性又はコンプライアント下層と
を備える、清浄材。
（２８）前記複数の機能化された微細特徴部は、前記清浄媒体にわたって１つ又は均一に成形され、前記清浄媒体にわたって可変に離間される、（２７）に記載の清浄材。
（２９）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数の種類の粒子をさらに含む、（２７）に記載の清浄材。
（３０）前記清浄層は、予め決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する１０～１００μｍ厚であるポリマー層をさらに備える、（２７）に記載の清浄材。
（３１）前記清浄層は、前記清浄媒体の上面にわたって１０～１００μｍ厚の、７以上のモース硬度を有する複数の研磨粒子を伴う研磨ポリマーの層をさらに備える、（２７）に記載の清浄材。
（３２）各微細特徴部は、前記清浄媒体の前記上面から離れる方へ上方に延びる正の微細特徴部をさらに備える、（２７）に記載の清浄材。
（３３）各正の微細特徴部は、マイクロピラミッド、マイクロカラム、及び湾曲マイクロピラミッドのうちの１つである、（３２）に記載の清浄材。
（３４）前記清浄層は、各正の微細特徴部の本体部を覆って適用され、各正の微細特徴部の本体部は、表側を有し、前記清浄層は、各正の微細特徴部の前記表側を覆って適用される、（３２）に記載の清浄材。
（３５）前記清浄層は、各正の微細特徴部の上面にわたって、及び各正の微細特徴部の前記本体部に沿って適用される、１０μｍ未満の厚さで７以上のモース硬度を有する複数の研磨粒子をさらに備える、（３２）に記載の清浄材。
（３６）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物である、（３５）に記載の清浄材。
（３７）各微細特徴部は、前記清浄媒体の上面から離れる方へ下方に延びる負の微細特徴部をさらに備える、（２７）に記載の清浄材。
（３８）各負の微細特徴部は、マイクロピラミッド、マイクロカラム、及び湾曲マイクロピラミッドのうちの１つである、（３７）に記載の清浄材。
（３９）前記清浄層は、前記清浄媒体の前記上面にわたって、及び各負の微細特徴部の腔内へ、及び各負の微細特徴部の内面に沿って、適用される、（３７）に記載の清浄材。
（４０）前記清浄層は、前記清浄媒体の前記上面にわたって、及び各負の微細特徴部の腔内へ、及び各負の微細特徴部の内面に沿って適用される、１０μｍ未満の厚さで７以上のモース硬度を有する複数の研磨粒子をさらに備える、（３７）に記載の清浄材。
（４１）前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物である、（４０）に記載の清浄材。
（４２）ワイヤボンディング装置の毛細管チューブを清浄するための方法であって、
前記ワイヤボンディング装置の前記毛細管チューブを使用してワイヤボンディング動作を実施することと、
清浄デバイスを使用して清浄動作を実施することと、を含み、前記清浄デバイスは、複数の機能化された微細特徴部を有する清浄媒体であって、前記複数の機能化された微細特徴部の各々が本体部を有し、前記本体部は、前記毛細管チューブの１つ又は複数の面が変更又は損傷なしに清浄されるように前記清浄媒体を最適化する、幅、高さ、各本体部間の間隔、及び寸法特性を有し、各微細特徴部は、前記清浄媒体の上面から離れる方へ延び、前記清浄媒体は、各微細特徴部の前記本体部内に均一に分布される７以上のモース硬度を有する複数の研磨粒子を有する、清浄媒体と、前記毛細管チューブの１つ又は複数の面から汚染物を清浄する予め決められた特徴を有する、前記清浄媒体の前記上面にわたって適用される清浄層と、前記清浄媒体の下の１つ又は複数の中間剛性又はコンプライアント下層であって、各下層は、４０ＭＰａ超～６００ＭＰａの範囲の弾性係数を有し、各層は、２５μｍ～３００μｍの厚さを有し、各層は、３０ショアＡ～９０ショアＡの硬度を有する、１つ又は複数の中間剛性又はコンプライアント下層と、を有する、方法。
（４３）前記清浄デバイスを使用して清浄動作を実施することは、予め決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する１０～１００μｍ厚であるポリマー層を使用することをさらに含む、（４２）に記載の方法。
（４４）前記清浄デバイスを使用して清浄動作を実施することは、前記清浄媒体の上面から離れる方へ上方に延びる正の微細特徴部を使用することをさらに含む、（４２）に記載の方法。
（４５）前記清浄デバイスを使用して清浄動作を実施することは、前記清浄媒体の上面から離れる方へ下方に延びる負の微細特徴部を使用することをさらに含む、（４２）に記載の方法。
（４６）前記清浄動作を実施することは、前記毛細管チューブを前記ワイヤボンディング装置から取り外すことなく前記毛細管チューブの前記清浄動作を実施することをさらに含む、（４２）に記載の方法。
（４７）前記清浄動作が完了すると、前記ワイヤボンディング動作を再開することをさらに含む、（４６）に記載の方法。
（４８）前記清浄動作を実施することは、予め決められた時間期間の後、前記毛細管チューブの前記清浄動作を実施することをさらに含む、（４２）に記載の方法。 Although the foregoing refers to particular embodiments of the disclosure, changes in the embodiments may be made without departing from the principles and spirit of the disclosure, the scope of which is defined by the appended claims. It will be understood by those skilled in the art that
The present invention includes the following aspects.
(1) A cleaning material with a functionalized surface for cleaning contact elements and support structures of a test interface used for wafer-level or package-level IC semiconductor device testing, the cleaning material comprising:
A cleaning medium having a plurality of functionalized microfeatures, each of the plurality of functionalized microfeatures having a body portion, the body portion having a contact area and surrounding support hardware. having width, height, spacing between each body portion, and dimensional characteristics that optimize said cleaning medium to be cleaned without alteration or damage, each microfeature being spaced apart from a top surface of said cleaning medium; a cleaning medium having a plurality of abrasive particles having a Mohs hardness of 7 or more uniformly distributed within the body of each microfeature;
a cleaning layer applied over the top surface of the cleaning medium having predetermined characteristics for cleaning contaminants from the pin contact elements and support hardware;
one or more intermediate rigid or compliant underlayers below the cleaning medium, each underlayer having an elastic modulus in the range of greater than 40 MPa to 600 MPa, each layer having a thickness of 25 μm to 300 μm; , each layer has one or more intermediate stiffness or compliant underlayers having a hardness of 30 Shore A to 90 Shore A.
Cleaning material with.
(2) The cleaning material of (1), wherein the plurality of functionalized microfeatures are singly or uniformly shaped across the cleaning medium and variably spaced across the cleaning medium.
(3) The cleaning material according to (1), wherein the plurality of abrasive particles further include one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(4) The cleaning material according to (1), wherein the cleaning layer further includes a polymer layer having a thickness of 10 to 100 μm and having predetermined specific gravity, elasticity, adhesiveness, flatness, thickness, and porosity. .
(5) The cleaning material according to (1), wherein the cleaning layer further comprises a 10-100 μm thick layer of abrasive polymer having a plurality of abrasive particles having a Mohs hardness of 7 or more over the top surface of the cleaning medium. .
(6) The cleaning material of (1), wherein each microfeature further includes a positive microfeature extending upwardly and away from a top surface of the cleaning medium.
(7) The cleaning material according to (6), wherein each positive microfeature is one of a micropyramid, a microcolumn, and a curved micropyramid.
(8) the cleaning layer is applied over a body of each positive microfeature, the body of each positive microfeature having a front side; and the cleaning layer is applied over a body of each positive microfeature; The cleaning material according to (6), which is applied to cover the front side of the cleaning material.
(9) the cleaning layer has a Mohs hardness of 7 or more with a thickness of less than 10 μm applied over the top surface of each positive microfeature and along the body of each positive microfeature; The cleaning material according to (6), further comprising abrasive particles.
(10) The cleaning material according to (9), wherein the plurality of abrasive particles are a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(11) The cleaning material of (1), wherein each microfeature further comprises a negative microfeature extending downwardly away from the top surface of the cleaning medium.
(12) The cleaning material according to (11), wherein each negative microfeature is one of a micropyramid, a microcolumn, and a curved micropyramid.
(13) The cleaning layer is applied over the top surface of the cleaning medium and into the cavities of each negative microfeature and along the inner surface of each negative microfeature. cleaning material.
(14) the cleaning layer is less than 10 μm thick and applied over the top surface of the cleaning medium and into the cavities of each negative microfeature and along the inner surface of each negative microfeature; The cleaning material according to (11), further comprising a plurality of abrasive particles having a Mohs hardness of 7 or more.
(15) The cleaning material according to (14), wherein the plurality of abrasive particles are a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(16) A method for cleaning contact elements and support structures of a test interface used for wafer level or package level IC semiconductor device testing, the method comprising:
performing a test operation of the wafer level or package level IC semiconductor device;
performing a cleaning operation using a cleaning device, the cleaning device comprising: a cleaning medium having a plurality of functionalized microfeatures; each has a body portion, said body portions having a width, height, and spacing between each body portion that optimizes said cleaning medium so that contact areas and surrounding support hardware are cleaned without alteration or damage. , and dimensional characteristics, each microfeature extending away from a top surface of the cleaning medium, the cleaning media having a Mohs hardness of 7 or more uniformly distributed within the body of each microfeature. a cleaning layer applied over the top surface of the cleaning media having predetermined characteristics for cleaning contaminants from the pin contact elements and support hardware; one or more intermediate rigid or compliant underlayers below the medium, each underlayer having an elastic modulus in the range of greater than 40 MPa to 600 MPa, each layer having a thickness of 25 μm to 300 μm, each layer one or more intermediate stiffness or compliant underlayers having a hardness of 30 Shore A to 90 Shore A.
(17) Performing a cleaning operation using the cleaning device uses a polymer layer that is 10-100 μm thick with predetermined specific gravity, elasticity, adhesion, flatness, thickness, and porosity. The method according to (16), further comprising:
(18) Performing a cleaning operation using the cleaning device further comprises using a plurality of positive microfeatures extending upwardly away from the top surface of the cleaning medium. Method described.
(19) Performing a cleaning operation using the cleaning device further comprises using a plurality of negative microfeatures extending downwardly and away from a top surface of the cleaning medium. the method of.
(20) A cleaning device for cleaning pin contact elements and support hardware in semiconductor test equipment, the cleaning device comprising:
A cleaning medium with a plurality of geometric surface features that mimic solder balls, pillars, copper pillar bumps, and/or gold bumps of a semiconductor device under test, the cleaning balls and cleaning pillars being in contact with the test interface. a cleaning medium further comprising a plurality of abrasive particles distributed within the feature and having a Mohs hardness of 7 or greater for cleaning the device and support structure;
a cleaning layer applied over the top surface of each geometric surface feature and along the sides of each geometric surface feature having predetermined characteristics to clean contaminants from the pin contact elements and support hardware; and,
a substrate on which the cleaning medium is mounted, the substrate comprising a surrogate semiconductor wafer or a packaged IC device, the substrate having a configuration suitable for being introduced into the test apparatus during normal test operation of the test apparatus;
A cleaning device with.
(21) The cleaning device of (20), further comprising a plurality of abrasive particles applied over the top surface and along the sides of each geometric surface feature.
(22) The cleaning layer according to (20), wherein the cleaning layer further comprises a layer of a polymer having a thickness of 10 to 100 μm and having a determined specific gravity, elasticity, adhesiveness, flatness, thickness, and porosity. device.
(23) The cleaning device according to (20), wherein the cleaning layer further comprises a layer of abrasive polymer with a plurality of abrasive particles having a Mohs hardness of 7 or higher, with a thickness of 10 μm to 100 μm.
(24) The cleaning device of (20), wherein the cleaning layer further comprises a layer of abrasive polymer with a plurality of abrasive particles having a thickness of less than 10 μm and a Mohs hardness of 7 or greater.
(25) The cleaning device of (24), wherein the plurality of abrasive particles further comprises a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(26) A method for cleaning pin contact elements and support hardware in semiconductor test equipment, the method comprising:
conducting a test of a device under test having a predetermined configuration of one of solder balls, pillars, copper pillar bumps, and gold bumps;
performing cleaning of the pin contact element and support hardware using a cleaning device, the cleaning device being a cleaning medium with a plurality of geometric surface features that mimic the cleaning The ball and cleaning pillar are in contact with the pin contact with a cleaning medium further comprising a plurality of abrasive particles distributed within the feature and having a Mohs hardness of 7 or higher for cleaning the contact elements and support structure of the test interface. a cleaning layer applied over the top surface of each geometric surface feature and along the sides of each geometric surface feature having predetermined characteristics for cleaning contaminants from the elements and supporting hardware; a substrate on which the cleaning medium is mounted, the substrate comprising a surrogate semiconductor wafer or a packaged IC device, the substrate having a configuration suitable for being introduced into the test apparatus during normal test operation of the test apparatus; A method having.
(27) A cleaning material with a functionalized surface for cleaning a capillary tube of a wire bonding device, comprising:
A cleaning medium having a plurality of functionalized microfeatures, each of the plurality of functionalized microfeatures having a body portion, the body portion having a contact area and surrounding support hardware. having width, height, spacing between each body portion, and dimensional characteristics that optimize said cleaning medium to be cleaned without alteration or damage, each microfeature being spaced apart from a top surface of said cleaning medium; a cleaning medium having a plurality of abrasive particles having a Mohs hardness of 7 or more uniformly distributed within the body of each microfeature;
a cleaning layer applied over the top surface of the cleaning medium having predetermined characteristics for cleaning contaminants from one or more sides of the capillary tube;
one or more intermediate rigid or compliant underlayers below the cleaning medium, each underlayer having an elastic modulus in the range of greater than 40 MPa to 600 MPa, each layer having a thickness of 25 μm to 300 μm; , each layer has one or more intermediate stiffness or compliant underlayers having a hardness of 30 Shore A to 90 Shore A.
Cleaning material with.
(28) The cleaning material of (27), wherein the plurality of functionalized microfeatures are singly or uniformly shaped across the cleaning medium and variably spaced across the cleaning medium.
(29) The cleaning material according to (27), wherein the plurality of abrasive particles further include one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(30) The cleaning material according to (27), wherein the cleaning layer further includes a polymer layer having a predetermined specific gravity, elasticity, adhesiveness, flatness, thickness, and porosity and having a thickness of 10 to 100 μm. .
(31) The cleaning material of (27), wherein the cleaning layer further comprises a layer of abrasive polymer with a plurality of abrasive particles having a Mohs hardness of 7 or more, 10-100 μm thick across the top surface of the cleaning medium.
(32) The cleaning material of (27), wherein each microfeature further comprises a positive microfeature extending upwardly away from the top surface of the cleaning medium.
(33) The cleaning material according to (32), wherein each positive microfeature is one of a micropyramid, a microcolumn, and a curved micropyramid.
(34) the cleaning layer is applied over a body of each positive microfeature, the body of each positive microfeature having a front side; and the cleaning layer is applied over a body of each positive microfeature; The cleaning material according to (32), which is applied to cover the front side of the cleaning material.
(35) The cleaning layer has a Mohs hardness of 7 or more with a thickness of less than 10 μm applied over the top surface of each positive microfeature and along the body of each positive microfeature. The cleaning material according to (32), further comprising abrasive particles.
(36) The cleaning material according to (35), wherein the plurality of abrasive particles are a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(37) The cleaning material of (27), wherein each microfeature further comprises a negative microfeature extending downwardly away from the top surface of the cleaning medium.
(38) The cleaning material according to (37), wherein each negative microfeature is one of a micropyramid, a microcolumn, and a curved micropyramid.
(39) The cleaning layer is applied over the top surface of the cleaning medium and into the cavities of each negative microfeature and along the inner surface of each negative microfeature. cleaning material.
(40) the cleaning layer has a thickness of less than 10 μm applied over the top surface of the cleaning medium and into the cavities of each negative microfeature and along the inner surface of each negative microfeature; The cleaning material according to (37), further comprising a plurality of abrasive particles having a Mohs hardness of 7 or more.
(41) The cleaning material according to (40), wherein the plurality of abrasive particles are a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
(42) A method for cleaning a capillary tube of a wire bonding device, the method comprising:
performing a wire bonding operation using the capillary tube of the wire bonding device;
performing a cleaning operation using a cleaning device, the cleaning device comprising: a cleaning medium having a plurality of functionalized microfeatures; each body has a width, height, and height that optimizes the cleaning medium such that one or more surfaces of the capillary tube are cleaned without alteration or damage. each microfeature extending away from the top surface of the cleaning medium, the cleaning media having seven or more microfeatures uniformly distributed within the body of each microfeature. a cleaning medium having a plurality of abrasive particles having a Mohs hardness and a cleaning applied over the upper surface of the cleaning medium having predetermined characteristics for cleaning contaminants from one or more surfaces of the capillary tube; and one or more intermediate rigid or compliant sublayers below the cleaning medium, each sublayer having a modulus of elasticity in the range of greater than 40 MPa to 600 MPa, and each layer having a thickness of 25 μm to 300 μm. and one or more intermediate stiffness or compliant sublayers, each layer having a hardness of 30 Shore A to 90 Shore A.
(43) Performing a cleaning operation using the cleaning device uses a polymer layer that is 10-100 μm thick with predetermined specific gravity, elasticity, adhesion, flatness, thickness, and porosity. The method according to (42), further comprising:
(44) The method of (42), wherein performing a cleaning operation using the cleaning device further comprises using positive microfeatures extending upwardly away from a top surface of the cleaning medium. .
(45) The method of (42), wherein performing a cleaning operation using the cleaning device further comprises using negative microfeatures extending downwardly and away from a top surface of the cleaning medium. .
(46) The method of (42), wherein performing the cleaning operation further comprises performing the cleaning operation of the capillary tube without removing the capillary tube from the wire bonding apparatus.
(47) The method of (46), further comprising restarting the wire bonding operation once the cleaning operation is completed.
(48) The method of (42), wherein performing the cleaning operation further comprises performing the cleaning operation of the capillary tube after a predetermined period of time.

Claims (11)

ウェハレベル又はパッケージレベルＩＣ半導体デバイス試験のために使用される試験インターフェースの接触素子及び支持構造体を清浄するための機能化面を伴う清浄材であって、前記清浄材は、
清浄媒体ベース基準平面および、複数の行と複数の列を有するアレイに配置された複数の機能化された微細特徴部を有する清浄媒体であって、前記機能化された微細特徴部の各々が本体部を有し、前記本体部は、接触領域及び周囲の支持ハードウェアが変更又は損傷なしに清浄されるように前記清浄媒体を最適化する、幅および、高さ、各本体部間の間隔、及び寸法特性を有し、各機能化された微細特徴部は、前記清浄媒体ベース基準平面上に延在し、前記清浄媒体は、各機能化された微細特徴部の前記本体部内に均一に分布される７以上のモース硬度を有する複数の研磨粒子を有する、清浄媒体と、
前記ピン接触素子及び支持ハードウェアから汚染物を清浄する予め決められた特徴を有する、前記清浄媒体の上面にわたって適用される清浄層と、前記清浄層は、前記機能化された微細特徴部の全ての上面に、そしてそれぞれの機能化された微細特徴部の間の間隔内に、前記洗浄媒体ベース基準平面まで、適用される、ならびに、
前記清浄媒体の下の１つ又は複数の中間剛性又はコンプライアント下層であって、各下層は、４０ＭＰａ超～６００ＭＰａの範囲の弾性係数を有し、各層は、２５μｍ～３００μｍの厚さを有し、各層は、３０ショアＡ～９０ショアＡの硬度を有する、１つ又は複数の中間剛性又はコンプライアント下層と
を備える、清浄材。 A cleaning material with a functionalized surface for cleaning contact elements and support structures of a test interface used for wafer level or package level IC semiconductor device testing, the cleaning material comprising:
a cleaning medium having a cleaning medium base reference plane and a plurality of functionalized microfeatures arranged in an array having a plurality of rows and a plurality of columns, each of said functionalized microfeatures; has a body portion, the body portions having a width and height between each body portion that optimizes the cleaning medium so that contact areas and surrounding support hardware are cleaned without alteration or damage. each functionalized microfeature has spacing, and dimensional characteristics, wherein each functionalized microfeature extends on the cleaning media base reference plane , and the cleaning media is uniformly within the body of each functionalized microfeature. a cleaning medium having a plurality of abrasive particles having a Mohs hardness of 7 or more distributed;
a cleaning layer applied over the top surface of the cleaning medium having predetermined features for cleaning contaminants from the pin contact elements and support hardware; applied to all top surfaces and within the spacing between each functionalized microfeature up to the cleaning medium base reference plane, and
one or more intermediate rigid or compliant underlayers below the cleaning medium, each underlayer having an elastic modulus in the range of greater than 40 MPa to 600 MPa, each layer having a thickness of 25 μm to 300 μm; , each layer comprising one or more intermediate stiffness or compliant underlayers having a hardness of 30 Shore A to 90 Shore A. 前記複数の機能化された微細特徴部は、前記清浄媒体にわたって均一に成形されたもの、および前記清浄媒体にわたって可変に離間されたもの、の１つである、請求項１に記載の清浄材。 2. The functionalized microfeatures of claim 1, wherein the plurality of functionalized microfeatures are one of uniformly shaped across the cleaning medium and variably spaced across the cleaning medium. Cleaning material. 前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数の種類の粒子をさらに含む、請求項１に記載の清浄材。 The cleaning material of claim 1, wherein the plurality of abrasive particles further include one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond. 前記清浄層は、予め決められた比重、弾性、粘着性、平坦性、厚さ、及び多孔性を有する１０～１００μｍ厚であるポリマー層をさらに備える、請求項１に記載の清浄材。 The cleaning material according to claim 1, wherein the cleaning layer further comprises a polymer layer having a thickness of 10 to 100 μm and having predetermined specific gravity, elasticity, adhesion, flatness, thickness, and porosity. 前記清浄層は、前記清浄媒体の上面にわたって、１０～１００μｍ厚の、７以上のモース硬度を有し、そして１０～１００μｍの厚さである複数の研磨粒子を有する研磨ポリマーの層をさらに備える、請求項１に記載の清浄材。 The cleaning layer further comprises a layer of abrasive polymer having a Mohs hardness of 7 or more, 10-100 μm thick, and having a plurality of abrasive particles 10-100 μm thick, over the top surface of the cleaning medium. The cleaning material according to claim 1. それぞれの正の機能化された微細特徴部は、マイクロピラミッド、マイクロカラム、及び湾曲マイクロピラミッドのうちの１つである、請求項１に記載の清浄材。 2. The cleaning material of claim 1 , wherein each positive functionalized microfeature is one of a micropyramid, a microcolumn, and a curved micropyramid. 前記清浄層は、各正の微細特徴部の本体部を覆って適用され、各正の機能化された微細特徴部の本体部は、表側を有し、前記清浄層は、各正の機能化された微細特徴部の前記表側を覆って適用される、請求項１に記載の清浄材。 The cleaning layer is applied over the body of each positive microfeature, the body of each positive functionalized microfeature having a front side, and the cleaning layer is applied over the body of each positive functionalized microfeature. 2. The cleaning material of claim 1 , wherein the cleaning material is applied over the front side of the microfeatures. 前記清浄層が、前記清浄媒体の前記上面の反対側に平坦な上面を有する、請求項１記載の清浄材。The cleaning material of claim 1, wherein the cleaning layer has a flat top surface opposite the top surface of the cleaning medium. それぞれの機能化された微細特徴部が、前記清浄媒体ベース基準平面上に２５μｍ～５００μｍの範囲で延在しており、前記清浄媒体ベース基準平面から２０μｍ超の最も遠い上面を有しており、そしてそれぞれの機能化された微細特徴部の間の前記間隔が５０μｍ～２５０μｍの範囲である、請求項１記載の清浄材。each functionalized microfeature extends between 25 μm and 500 μm above the clean media base reference plane, and has a top surface furthest from the clean media base reference plane by more than 20 μm; The cleaning material of claim 1, wherein the spacing between each functionalized microfeature is in the range of 50 μm to 250 μm. 前記清浄層は、各正の機能化された微細特徴部の上面にわたって、及び各正の機能化された微細特徴部の前記本体部に沿って適用される、１０μｍ未満の厚さで７以上のモース硬度を有する複数の研磨粒子をさらに含む、請求項１に記載の清浄材。 The cleaning layer is applied over the top surface of each positive functionalized microfeature and along the body of each positive functionalized microfeature, with a thickness of less than 10 μm and 7 or more microfeatures. The cleaning material of claim 1 , further comprising a plurality of abrasive particles having a Mohs hardness. 前記複数の研磨粒子は、酸化アルミニウム、炭化ケイ素、及びダイヤモンドからなる群から選択される１つ又は複数のタイプの粒子の混合物である、請求項１０に記載の清浄材。 11. The cleaning material of claim 10 , wherein the plurality of abrasive particles are a mixture of one or more types of particles selected from the group consisting of aluminum oxide, silicon carbide, and diamond.
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US11434095B2 (en) 2018-02-23 2022-09-06 International Test Solutions, Llc Material and hardware to automatically clean flexible electronic web rolls
US11756811B2 (en) 2019-07-02 2023-09-12 International Test Solutions, Llc Pick and place machine cleaning system and method
US11211242B2 (en) 2019-11-14 2021-12-28 International Test Solutions, Llc System and method for cleaning contact elements and support hardware using functionalized surface microfeatures
TWI805107B (en) * 2021-12-01 2023-06-11 神興科技股份有限公司 Double-layer probe cleaning sheet and manufacturing method of the probe cleaning sheet

Family Cites Families (207)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971208A (en) 1958-06-06 1961-02-14 Harry E Moore Apparatus for scrubbing automobile floor mats
US3453677A (en) 1968-04-15 1969-07-08 Bertie Burger Cutler Dry mop
US3675265A (en) 1969-12-12 1972-07-11 Int Silver Co Brush construction
US3644953A (en) 1970-06-08 1972-02-29 Minnesota Mining & Mfg Sheet-cleaning apparatus
US3717897A (en) 1970-06-18 1973-02-27 H Amos Tacky floor pad
US3945079A (en) 1975-03-31 1976-03-23 Minnesota Mining And Manufacturing Company Laminated photographic film cleaning fabric
US4104755A (en) 1976-08-02 1978-08-08 Smith Judson L Vehicle floor mat washer
US4277160A (en) 1978-09-13 1981-07-07 Tokyo Shibaura Denki Kabushiki Kaisha Electrostatic printer
US4334780A (en) 1979-06-29 1982-06-15 Grumman Aerospace Corporation Optical surface roughness detection method and apparatus
JPS5788742A (en) 1980-11-21 1982-06-02 Nec Corp Device and method for bonding
US4590422A (en) 1981-07-30 1986-05-20 Pacific Western Systems, Inc. Automatic wafer prober having a probe scrub routine
JPS58131743A (en) 1982-01-29 1983-08-05 Shinkawa Ltd Method of ball formation for wire bonder and device thereof
JPS6190434A (en) 1984-10-11 1986-05-08 Hitachi Ltd Manufacture of electronic element
JPS6199336A (en) 1984-10-22 1986-05-17 Hitachi Ltd Manufacture of electron element
JPS61124139A (en) 1984-11-21 1986-06-11 Hitachi Ltd Manufacture of electronical element
JPS61245536A (en) 1985-04-24 1986-10-31 Hitachi Ltd Manufacture of electronic element
JPS62184842A (en) 1986-02-10 1987-08-13 Kanegafuchi Chem Ind Co Ltd Method for surface treatment of film
JPS63204728A (en) 1987-02-20 1988-08-24 Fukuoka Nippon Denki Kk Remover of foreign particle on semiconductor device
JP2708462B2 (en) 1988-04-28 1998-02-04 株式会社日立製作所 Semiconductor substrate surface treatment method, semiconductor substrate surface treatment device, and semiconductor substrate surface treatment film
US5011513A (en) 1989-05-31 1991-04-30 Norton Company Single step, radiation curable ophthalmic fining pad
JPH0435778A (en) 1990-05-31 1992-02-06 Fujitsu Ltd Method for cleaning nozzle
JP2827060B2 (en) 1991-05-20 1998-11-18 株式会社新川 Bonding equipment
JPH04364746A (en) 1991-06-12 1992-12-17 Tokyo Electron Yamanashi Kk Probe apparatus
US5192455A (en) 1991-08-26 1993-03-09 Marcel Jr Raymond C Pollution pad reconditioning/recycling system
JPH05211195A (en) 1991-11-29 1993-08-20 Nec Corp Wire bonding apparatus
JPH05326471A (en) 1992-05-19 1993-12-10 Sony Corp Method for cleaning semiconductor devices
JPH0596057U (en) 1992-05-27 1993-12-27 日新電機株式会社 Cleaning wafer
US5444265A (en) 1993-02-23 1995-08-22 Lsi Logic Corporation Method and apparatus for detecting defective semiconductor wafers during fabrication thereof
US5485949A (en) 1993-04-30 1996-01-23 Matsushita Electric Industrial Co., Ltd. Capillary for a wire bonding apparatus and a method for forming an electric connection bump using the capillary
JP2511806B2 (en) 1994-03-03 1996-07-03 日本電子材料株式会社 Probe tip cleaning material
US5507874A (en) 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors
JP3188935B2 (en) 1995-01-19 2001-07-16 東京エレクトロン株式会社 Inspection device
JP2813147B2 (en) 1995-02-14 1998-10-22 三菱電機株式会社 Method for analyzing minute foreign matter, analyzer and method for producing semiconductor element or liquid crystal display element using the same
US5597346A (en) 1995-03-09 1997-01-28 Texas Instruments Incorporated Method and apparatus for holding a semiconductor wafer during a chemical mechanical polish (CMP) process
JPH08310080A (en) 1995-03-10 1996-11-26 Seiko Epson Corp Cleaning sheet and recording medium sheet including cleaning sheet
JP3417721B2 (en) 1995-04-04 2003-06-16 三菱電機株式会社 How to use a scanning probe microscope
WO1996033419A2 (en) 1995-04-19 1996-10-24 Philips Electronics N.V. Method of cleaning probe tips of probe cards and apparatus for implementing the method
US5699584A (en) 1995-07-24 1997-12-23 Xerox Corporation Web system
US5685043A (en) 1995-07-24 1997-11-11 Xerox Corporation Removal of particulates from cylindrical members
JPH09102453A (en) 1995-10-03 1997-04-15 Nikon Corp Substrate holding member and aligner
JP2808261B2 (en) 1995-10-31 1998-10-08 株式会社コバックス Polishing sheet and method for producing the same
KR100392730B1 (en) 1995-12-28 2003-10-30 주식회사 하이닉스반도체 Capillary cleaning apparatus and method
US5690749A (en) 1996-03-18 1997-11-25 Motorola, Inc. Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material
US5671119A (en) 1996-03-22 1997-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Process for cleaning an electrostatic chuck of a plasma etching apparatus
US5783018A (en) 1996-04-05 1998-07-21 Motorola, Inc. Apparatus for cleaning labels and method therefor
US5746928A (en) 1996-06-03 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd Process for cleaning an electrostatic chuck of a plasma etching apparatus
TW334609B (en) 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
US5766061A (en) 1996-10-04 1998-06-16 Eco-Snow Systems, Inc. Wafer cassette cleaning using carbon dioxide jet spray
JPH10154686A (en) 1996-11-22 1998-06-09 Toshiba Corp Method of cleaning semiconductor substrate processing device
TW377482B (en) 1997-04-08 1999-12-21 Tokyo Electron Ltd Cleaner with protuberances for inspection, inspection apparatus and inspection method for integrated circuits
US6306187B1 (en) 1997-04-22 2001-10-23 3M Innovative Properties Company Abrasive material for the needle point of a probe card
JP3923589B2 (en) 1997-04-22 2007-06-06 住友スリーエム株式会社 Probe card needle tip cleaning method
US6118290A (en) 1997-06-07 2000-09-12 Tokyo Electron Limited Prober and method for cleaning probes provided therein
DE69832010T2 (en) 1997-07-24 2006-07-13 Mitsubishi Denki K.K. Probe for semiconductor circuits and process for their manufacture
JPH1187438A (en) 1997-09-03 1999-03-30 Mitsubishi Electric Corp Member and method for cleaning of probe tip, and test method for semiconductor wafer
US6573702B2 (en) 1997-09-12 2003-06-03 New Wave Research Method and apparatus for cleaning electronic test contacts
US5930857A (en) 1997-10-14 1999-08-03 Eastman Kodak Company Apparatus for cleaning a surface of a moving web
JPH11133116A (en) 1997-11-04 1999-05-21 Mitsubishi Electric Corp Polishing member and cleaning device for probe needle for probe card
JP3366239B2 (en) 1997-11-07 2003-01-14 松下電器産業株式会社 Probe card cleaning equipment
JP3429995B2 (en) 1997-11-10 2003-07-28 東京エレクトロン株式会社 Cleaning method
JPH11230989A (en) 1997-12-10 1999-08-27 Mitsubishi Electric Corp Method and apparatus for cleaning probe pin for probe card and cleaning liquid therefor
US6121058A (en) 1998-01-02 2000-09-19 Intel Corporation Method for removing accumulated solder from probe card probing features
WO1999034965A1 (en) 1998-01-09 1999-07-15 Beamech Group Limited Process and apparatus for producing plastics and polymeric foam
US6019663A (en) 1998-02-20 2000-02-01 Micron Technology Inc System for cleaning semiconductor device probe
JPH11238768A (en) 1998-02-20 1999-08-31 Japan Electronic Materials Corp Probe end cleaning sheet
US6246250B1 (en) 1998-05-11 2001-06-12 Micron Technology, Inc. Probe card having on-board multiplex circuitry for expanding tester resources
TW436635B (en) 1998-07-24 2001-05-28 Makoto Matsumura Polishing plate
US6256555B1 (en) 1998-12-02 2001-07-03 Newport Corporation Robot arm with specimen edge gripping end effector
JP2000232125A (en) 1999-02-12 2000-08-22 Fujitsu Ten Ltd Wire bonding device
AU4840300A (en) 1999-05-11 2000-11-21 Audrey Muhr-Sweeney Universal cleaning apparatus
US6507393B2 (en) 1999-05-12 2003-01-14 John Samuel Batchelder Surface cleaning and particle counting
JP4152040B2 (en) 1999-05-21 2008-09-17 株式会社日本マイクロニクス Contact tip cleaning member
US6777966B1 (en) 1999-07-30 2004-08-17 International Test Solutions, Inc. Cleaning system, device and method
US7202683B2 (en) 1999-07-30 2007-04-10 International Test Solutions Cleaning system, device and method
US6224470B1 (en) 1999-09-29 2001-05-01 Applied Materials, Inc. Pad cleaning brush for chemical mechanical polishing apparatus and method of making the same
US6193587B1 (en) 1999-10-01 2001-02-27 Taiwan Semicondutor Manufacturing Co., Ltd Apparatus and method for cleansing a polishing pad
US6733876B1 (en) 1999-10-20 2004-05-11 3M Innovative Properties Company Flexible abrasive article
US6280298B1 (en) 1999-11-24 2001-08-28 Intel Corporation Test probe cleaning
KR20010063275A (en) 1999-12-22 2001-07-09 윤종용 A method of forming a storage electrode in a dram
US6523208B1 (en) 2000-03-24 2003-02-25 Xerox Corporation Flexible web cleaning system
US20020079349A1 (en) 2000-03-27 2002-06-27 Kessem Trade Company Ltd. Wire bonding capillary
EP1301288B1 (en) 2000-07-14 2006-11-08 Nitto Denko Corporation Cleaning sheet, conveying member using the same, and substrate processing equipment cleaning method using them
DE10054159A1 (en) 2000-11-02 2002-05-16 Wacker Siltronic Halbleitermat Method of assembling semiconductor wafers
JP3463043B2 (en) 2001-01-24 2003-11-05 Ｎｅｃセミコンダクターズ九州株式会社 Cleaning method and cleaning apparatus for cleaning capillary of wire bonding apparatus
US6619854B2 (en) 2001-01-31 2003-09-16 Teradyne, Inc. Techniques for cleaning an optical interface of an optical connection system
US6714295B2 (en) 2001-10-23 2004-03-30 Beyond 3, Inc. Optical inspection method and apparatus having an enhanced height sensitivity region and roughness filtering
JP2002248433A (en) 2001-02-27 2002-09-03 Shibaura Mechatronics Corp Substrate cleaning apparatus and panel manufacturing apparatus using the same
KR100857642B1 (en) 2001-04-09 2008-09-08 니혼 미크로 코팅 가부시끼 가이샤 Implement for cleaning tip and lateral surface of contactor
DE60132021T2 (en) 2001-04-09 2008-04-10 Nitto Denko Corp., Ibaraki LABEL LEAF FOR CLEANING, METHOD FOR PRODUCING A LABEL LEAF, CLEANING FUNCTION DELIVERY ELEMENT AND METHOD FOR CLEANING A SUBSTRATE WORKING STATION
JP2002326169A (en) 2001-05-02 2002-11-12 Nihon Micro Coating Co Ltd Contact cleaning sheet and method
JP4832664B2 (en) 2001-05-21 2011-12-07 日本ミクロコーティング株式会社 Contact cleaning sheet and method
JP3888197B2 (en) 2001-06-13 2007-02-28 三菱電機株式会社 Member for removing foreign matter adhering to probe tip, cleaning method and probing device for foreign matter adhering to probe tip
US6776171B2 (en) 2001-06-27 2004-08-17 International Business Machines Corporation Cleaning of semiconductor wafers by contaminate encapsulation
US6908364B2 (en) 2001-08-02 2005-06-21 Kulicke & Soffa Industries, Inc. Method and apparatus for probe tip cleaning and shaping pad
US7514414B2 (en) 2001-09-24 2009-04-07 The United States Of America As Represented By The Department Of Health And Human Services Suppressors of CpG oligonucleotides and methods of use
US6817052B2 (en) 2001-11-09 2004-11-16 Formfactor, Inc. Apparatuses and methods for cleaning test probes
JP3987720B2 (en) 2001-12-19 2007-10-10 日東電工株式会社 Cleaning sheet and method for cleaning substrate processing apparatus using the same
US6813828B2 (en) 2002-01-07 2004-11-09 Gel Pak L.L.C. Method for deconstructing an integrated circuit package using lapping
US6840374B2 (en) 2002-01-18 2005-01-11 Igor Y. Khandros Apparatus and method for cleaning test probes
US6813804B2 (en) 2002-06-06 2004-11-09 Samsung Electronics Co., Ltd. Apparatus and method for cleaning probe card contacts
US20050118414A1 (en) 2002-06-19 2005-06-02 Nitto Denko Corporation Cleaning sheets, transfer member having cleaning function, and method of cleaning substrate-processing apparatus with these
US7306849B2 (en) 2002-07-01 2007-12-11 Formfactor, Inc. Method and device to clean probes
JP2004063669A (en) 2002-07-26 2004-02-26 Oki Electric Ind Co Ltd Semiconductor manufacturing device cleaning wafer and method for manufacturing the same and cleaning method using the same
US6696644B1 (en) * 2002-08-08 2004-02-24 Texas Instruments Incorporated Polymer-embedded solder bumps for reliable plastic package attachment
KR100707567B1 (en) 2002-11-25 2007-04-13 닛토덴코 가부시키가이샤 Cleaning sheet and method for cleaning substrate processing apparatus
JP2004174314A (en) 2002-11-25 2004-06-24 Nitto Denko Corp Cleaning sheet and cleaning method of substrate treating apparatus
JP2004305936A (en) 2003-04-08 2004-11-04 Mitsubishi Electric Corp Probe pin cleaner
ITMI20030292U1 (en) 2003-06-23 2004-12-24 Paperlast Internat S R L DEVICE FOR THE INTRODUCTION OF SHEETS WITH AUTOMATIC CLEANING IN PLASTIC MACHINES
US6899602B2 (en) 2003-07-30 2005-05-31 Rohm And Haas Electronic Materials Cmp Holdings, Nc Porous polyurethane polishing pads
US7718255B2 (en) 2003-08-19 2010-05-18 Nitto Denko Corporation Cleaning sheets and method of cleaning with the same
US7411157B2 (en) 2003-09-26 2008-08-12 Kulicke And Soffa Industries, Inc. Electronic flame-off electrode with ball-shaped tip
KR101122792B1 (en) 2004-01-29 2012-03-21 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for installing a scrubber brush on a mandrel
JP2005249409A (en) 2004-03-01 2005-09-15 Oki Electric Ind Co Ltd Cleaning sheet for probe needle
JP2005254498A (en) 2004-03-09 2005-09-22 Lintec Corp Cleaning sheet and cleaning method using this sheet
JP2005326250A (en) 2004-05-14 2005-11-24 Sumitomo Electric Ind Ltd Cleaning sheet and method for probe
US7180315B2 (en) 2004-06-28 2007-02-20 Sv Probe, Ltd. Substrate with patterned conductive layer
JP2006013185A (en) 2004-06-28 2006-01-12 Nitto Denko Corp Method of reproducing cleaning member for semiconductor device
JP2006015457A (en) 2004-07-02 2006-01-19 Nikon Corp Adsorbing device, polishing device, semiconductor device manufacturing method, and semiconductor device manufactured by the method
JP2006019616A (en) 2004-07-05 2006-01-19 Nitto Denko Corp Conveyance member with cleaning function and cleaning method of substrate processing apparatus
US7655316B2 (en) 2004-07-09 2010-02-02 Applied Materials, Inc. Cleaning of a substrate support
JP4064383B2 (en) 2004-08-09 2008-03-19 シャープ株式会社 Fixing apparatus and image forming apparatus having the same
US20060065290A1 (en) 2004-09-28 2006-03-30 Jerry Broz Working surface cleaning system and method
US9833818B2 (en) 2004-09-28 2017-12-05 International Test Solutions, Inc. Working surface cleaning system and method
JP2006165395A (en) 2004-12-09 2006-06-22 Jsr Corp Probe-cleaning film and probe-cleaning member
JP2006186133A (en) 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd Device and method for inspecting semiconductor device
JP2006216886A (en) 2005-02-07 2006-08-17 Dainippon Screen Mfg Co Ltd Chuck, processing unit, substrate processing apparatus and method for cleaning chucking face
US7671398B2 (en) 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
US20060219754A1 (en) 2005-03-31 2006-10-05 Horst Clauberg Bonding wire cleaning unit and method of wire bonding using same
JP4970835B2 (en) 2005-05-26 2012-07-11 日東電工株式会社 Adhesive layer, manufacturing method thereof, adhesive sheet, cleaning sheet, transport member with cleaning function, and cleaning method
US20060272678A1 (en) 2005-06-06 2006-12-07 Corrado Frank C Method and apparatus for a tape-rewinding substrate cleaner
KR100686793B1 (en) 2005-06-23 2007-02-26 앰코 테크놀로지 코리아 주식회사 Wire bonding machine capable of removing particles from capillary and cleaning method of capillary bottom tip
CN1889240A (en) 2005-06-28 2007-01-03 京元电子股份有限公司 Apparatus and method for automatic cleaning suction nozzle
JP2007035684A (en) 2005-07-22 2007-02-08 Nitto Denko Corp Dust removing member of substrate processing equipment
CN101297395A (en) 2005-10-25 2008-10-29 日东电工株式会社 Cleaning sheet, transfer member provided with cleaning function, and method for cleaning substrate processing apparatus
DE102005052308A1 (en) 2005-11-01 2007-05-03 Tesa Ag Cleaning device for material web with adhesive on one side has at least one cleaning-off element with sticky surface in part region
JP4530975B2 (en) 2005-11-14 2010-08-25 株式会社新川 Wire bonding method
JP4607748B2 (en) 2005-12-02 2011-01-05 東京エレクトロン株式会社 Substrate particle removal method, apparatus and coating and developing apparatus
US20070140754A1 (en) 2005-12-21 2007-06-21 Xerox Corporation. Reusable web cleaning system for a fuser
US20070153062A1 (en) 2005-12-30 2007-07-05 Shie Jin S Monolithic fabrication method and structure of array nozzles on thermal inkjet print head
KR20070074398A (en) 2006-01-09 2007-07-12 삼성전자주식회사 Semiconductor wafer including contamination removal part
KR20070074426A (en) 2006-01-09 2007-07-12 한미반도체 주식회사 Cleaning apparatus for manufacturing semiconductor
US7772830B2 (en) 2006-03-03 2010-08-10 Texas Instruments Incorporated Test handler automatic contactor cleaner methods and surrogate cleaning device
JP2007329377A (en) 2006-06-09 2007-12-20 Nitto Denko Corp Transport member with cleaning function and cleaning method of substrate processor
US7641739B2 (en) 2006-06-13 2010-01-05 The Boeing Company Friction stir welding tool cleaning method
JP4700570B2 (en) 2006-07-14 2011-06-15 株式会社新川 Bonding apparatus, bonding tool tip cleaning method and program
JP2008039706A (en) 2006-08-09 2008-02-21 Nihon Micro Coating Co Ltd Probe cleaning sheet
JP5009065B2 (en) 2006-08-11 2012-08-22 日東電工株式会社 Cleaning member, conveying member with cleaning function, and cleaning method for substrate processing apparatus
JP4509981B2 (en) 2006-08-11 2010-07-21 日東電工株式会社 Cleaning member, conveying member with cleaning function, and cleaning method for substrate processing apparatus
CN101127343B (en) 2006-08-18 2010-12-15 巨擘科技股份有限公司 Structure for integrating IC integration base board and carrier board, its manufacturing method and manufacturing method of electronic device
JP5027468B2 (en) 2006-09-15 2012-09-19 日本ミクロコーティング株式会社 Probe cleaning or probe processing sheet and probe processing method
JP4840118B2 (en) 2006-12-13 2011-12-21 株式会社デンソー Wire bonding method and wire bonding apparatus
JP2008210894A (en) 2007-02-23 2008-09-11 Nec Electronics Corp Wafer processor
JP2008270270A (en) 2007-04-16 2008-11-06 Renesas Technology Corp Process for manufacturing semiconductor device
US9093481B2 (en) 2007-04-23 2015-07-28 GlobalFoundries, Inc. Method for semiconductor wafer fabrication utilizing a cleaning substrate
US7530887B2 (en) 2007-08-16 2009-05-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with controlled wetting
JP2009138027A (en) 2007-12-03 2009-06-25 Nitto Denko Corp Method for producing pressure-sensitive adhesive layer, pressure-sensitive adhesive sheet, cleaning sheet, conveying member with cleaning function, and cleaning method
JP4369507B2 (en) 2007-12-07 2009-11-25 株式会社新川 Bonding apparatus and bonding method
CN101896994B (en) * 2007-12-10 2012-04-04 里纳股份有限公司 Apparatus for, and method of, cleaning articles
WO2009079657A2 (en) 2007-12-18 2009-06-25 Byung Chun Yang High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability
US8163605B2 (en) 2008-02-15 2012-04-24 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
TW200937019A (en) 2008-02-21 2009-09-01 Ipworks Technology Corp Probes of cantilever probe card
US20090227048A1 (en) 2008-03-04 2009-09-10 Powertech Technology Inc. Method for die bonding having pick-and-probing feature
US7881785B2 (en) 2008-03-26 2011-02-01 Cardiac Science Corporation Method and apparatus for defrosting a defibrillation electrode
WO2009155482A2 (en) 2008-06-19 2009-12-23 Zih Corp. Portable printer
KR20100029504A (en) 2008-09-08 2010-03-17 삼성테크윈 주식회사 Unit for cleaning electronic components mounting film and apparatus for manufacturing electronic components mounting film
KR100889297B1 (en) 2008-09-12 2009-03-18 주식회사 코스마 Cleaning jig of capillary for wire bonding, cleaning device of capillary for wire bonding, method for fabricating thereof and method for cleaning using the same
TWM364268U (en) 2008-12-01 2009-09-01 Jtron Technology Corp Adhesive cleaning device of test chip base
US8242431B2 (en) 2008-12-12 2012-08-14 GE Lighting Solutions, LLC Automated de-icing system for low power lighting apparatus
WO2010120956A2 (en) 2009-04-14 2010-10-21 International Test Solutions Wafer manufacturing cleaning apparatus, process and method of use
DE102009017659A1 (en) 2009-04-16 2010-10-28 Schott Ag Method for the conductive connection of a component on a transparent substrate
US8371316B2 (en) 2009-12-03 2013-02-12 International Test Solutions, Inc. Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware
US7866530B1 (en) 2010-06-28 2011-01-11 Valeri Riachentsev Clean tip soldering station
GB2483463B (en) 2010-09-08 2015-01-21 Itw Cs Uk Ltd Wide adhesive sheeted roll for contact cleaning
US20140191618A1 (en) 2011-06-07 2014-07-10 Youtec Co., Ltd. Poling treatment method, plasma poling device, piezoelectric body and manufacturing method thereof, film forming device and etching device, and lamp annealing device
US8876983B2 (en) 2011-09-01 2014-11-04 Ford Global Technologies, Llc In-line cleaning method for ultrasonic welding tools
US8563417B2 (en) * 2011-11-22 2013-10-22 Alpha & Omega Semiconductor, Inc. Method for packaging ultra-thin chip with solder ball thermo-compression in wafer level packaging process
US8768230B2 (en) 2012-06-15 2014-07-01 Xerox Corporation Method an apparatus for reusing a cleaning web to clean a fuser unit
CN102786941B (en) 2012-08-06 2014-10-08 山西鑫立能源科技有限公司 Heat cycle continuous automatic coal pyrolyzing furnace
TWI537094B (en) * 2012-09-08 2016-06-11 西凱渥資訊處理科技公司 Systems and methods related to ablation and cleaning during manufacture of radio-frequency modules
KR101473811B1 (en) 2012-11-23 2014-12-17 일진엘이디(주) Window cleaning kit for wire bonding apparatus, wire bonding apparatus including the same and cleaning method of capillary using the same
JP6086763B2 (en) 2013-03-11 2017-03-01 ファスフォードテクノロジ株式会社 Collet cleaning method and die bonder using the same
GB2515828A (en) 2013-07-05 2015-01-07 Piers St John Spencer Cave Kettle
KR102099359B1 (en) 2013-07-08 2020-04-09 엘에스산전 주식회사 Cleaning Device for Contamination of Contact of Electromagnetic Contactor
KR101883311B1 (en) * 2013-08-07 2018-07-31 인터내셔널 테스트 솔루션즈, 인코포레이티드 Working surface cleaning system and method
US9318362B2 (en) 2013-12-27 2016-04-19 Asm Technology Singapore Pte Ltd Die bonder and a method of cleaning a bond collet
US9190322B2 (en) 2014-01-24 2015-11-17 Infineon Technologies Ag Method for producing a copper layer on a semiconductor body using a printing process
DE102014103262B3 (en) 2014-03-11 2015-06-11 Multitest Elektronische Systeme Gmbh Device for testing electronic components
US11148164B2 (en) 2014-07-25 2021-10-19 Biodot, Inc. Piezoelectric dispenser with a longitudinal transducer and replaceable capillary tube
US20160131702A1 (en) 2014-11-10 2016-05-12 Teradyne, Inc. Assembling devices for probe card testing
GB2532255B (en) 2014-11-13 2020-04-29 Itw Ltd Line cleaner
JP2017537480A (en) 2014-11-23 2017-12-14 エム キューブド テクノロジーズＭ Ｃｕｂｅｄ Ｔｅｃｈｎｏｌｏｇｉｅｓ Manufacture and repair of wafer pin chuck
US20180017748A1 (en) 2015-02-10 2018-01-18 Telefonaktiebolaget Lm Ericsson (Publ) A method and apparatus for interconnecting photonic circuits
KR102328101B1 (en) 2015-07-07 2021-11-17 삼성전자주식회사 Probe card, thermal insulation cover assembly for probe card, and apparatus of testing semiconducotr device including the probe card
TWI655150B (en) 2015-12-01 2019-04-01 耐克創新有限合夥公司 Material tensioning system in manufacturing process and method of tensioning material
MY187430A (en) 2015-12-25 2021-09-22 Kaijo Kk Wire bonding apparatus
KR102653773B1 (en) 2016-05-12 2024-04-01 세메스 주식회사 Collect cleaning module and die bonding apparatus having the same
US9831215B1 (en) 2016-08-03 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and forming method thereof
JP6705765B2 (en) 2017-03-23 2020-06-03 ファスフォードテクノロジ株式会社 Die bonding apparatus and semiconductor device manufacturing method
US9825000B1 (en) * 2017-04-24 2017-11-21 International Test Solutions, Inc. Semiconductor wire bonding machine cleaning device and method
US10766057B2 (en) 2017-12-28 2020-09-08 Micron Technology, Inc. Components and systems for cleaning a tool for forming a semiconductor device, and related methods
US11434095B2 (en) 2018-02-23 2022-09-06 International Test Solutions, Llc Material and hardware to automatically clean flexible electronic web rolls
US11437861B2 (en) 2018-08-22 2022-09-06 Apple Inc. Test object holder
US20200200800A1 (en) 2018-12-20 2020-06-25 International Test Solutions Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware
US10792713B1 (en) 2019-07-02 2020-10-06 International Test Solutions, Inc. Pick and place machine cleaning system and method
US11756811B2 (en) 2019-07-02 2023-09-12 International Test Solutions, Llc Pick and place machine cleaning system and method
US11211242B2 (en) 2019-11-14 2021-12-28 International Test Solutions, Llc System and method for cleaning contact elements and support hardware using functionalized surface microfeatures
US11035898B1 (en) 2020-05-11 2021-06-15 International Test Solutions, Inc. Device and method for thermal stabilization of probe elements using a heat conducting wafer

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