JP2007329377A - Transport member with cleaning function and cleaning method of substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transport member with a cleaning function which is superior in foreign matter removing performance and transport performance, and especially efficiently removes the foreign matter, even when using a substrate processor holding a substrate in a vacuuming system, and also to provide a method of cleaning a substrate processor using such a transport member with the cleaning function. <P>SOLUTION: The transport member with a cleaning function has a recess at least in one side of the member with a cleaning layer provided in the recess. The cleaning method of a substrate processor comprises transporting the transport member with the cleaning function in the substrate processor. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a conveying member with a cleaning function. More specifically, the present invention relates to a carrying member with a cleaning function that is excellent in foreign matter removing performance and carrying performance, and that can remove foreign matters having a predetermined particle diameter particularly efficiently. The present invention also relates to a method for cleaning a substrate processing apparatus using such a conveying member with a cleaning function.

  In various substrate processing apparatuses that dislike foreign matters, such as manufacturing apparatuses and inspection apparatuses such as semiconductors, flat panel displays, and printed circuit boards, the respective transport systems and the substrate are transported while being physically contacted. At that time, if foreign matter adheres to the substrate or the transport system, subsequent substrates are contaminated one after another, and it is necessary to periodically stop the apparatus and perform a cleaning process. As a result, there has been a problem that the operating rate of the processing apparatus is lowered and a great amount of labor is required for the cleaning process of the apparatus.

  In order to overcome such a problem, a method (see Patent Document 1) for removing foreign substances adhering to the back surface of the substrate by conveying a plate-like member has been proposed. According to such a method, since it is not necessary to stop the substrate processing apparatus and perform the cleaning process, the problem that the operating rate of the processing apparatus is reduced is solved. However, this method cannot sufficiently remove foreign matter.

  On the other hand, there has been proposed a method (see Patent Document 2) for cleaning and removing foreign substances adhering to the processing apparatus by transporting the substrate to which the adhesive substance is fixed as a cleaning member into the substrate processing apparatus. In addition to the advantages of the method described in Patent Document 1, this method is also excellent in removing foreign matters. Therefore, a problem that the operating rate of the processing apparatus is reduced and a great amount of labor is required for the cleaning process of the apparatus. Both of these problems are solved. However, according to the method described in Patent Document 2, the contact portion between the adhesive substance and the apparatus may be strongly bonded and not separated. As a result, a problem that the substrate cannot be reliably transported, a problem that the transport device is damaged, and a problem that the dust removal property is inferior may occur.

  As a method for producing a substrate (cleaning member) to which the above-mentioned adhesive substance is fixed, it can be proposed to provide a cleaning layer on at least one surface of the conveying member. Specifically, for example, a method of applying a liquid material that can form a cleaning layer on the surface of a conveying member such as a silicon wafer can be mentioned. As a means for applying the liquid material to the surface of the conveying member, a coating type application means such as a spin coater or a cycle coater is generally used. However, according to the coating type coating means, the coating thickness of the wafer edge portion becomes extremely larger than that of other portions, and a state called a crown occurs. When the cleaning layer having such a state is used, only the crown portion of the cleaning layer comes into contact with the table to be cleaned, and as a result, there is a problem that most of the table cannot be cleaned.

  As a method for solving the above problem, an edge rinse in which the crown portion is dissolved and removed with a thinner or the like can be mentioned. However, it is difficult to strictly control the thickness of the remaining portion dissolved and removed by applying edge rinse to the same thickness as other portions. In addition, when thinner is applied to a V-notch (about 1.5 mm cut) or an orientation flat of a silicon wafer, the thinner is scattered in all directions, and the scattered entire surface of the cleaning layer is roughened by the scattered thinner. there were. Therefore, when performing edge rinse, it is common to remove all of the coating liquid with a target of about 5 mm from the wafer edge. However, in the case of using the edge-rinsed member as a conveying member with a cleaning function in this way, there is a problem that cleaning cannot be performed in a portion where there is no coating film of about 5 mm from the wafer edge. Depending on the substrate processing apparatus, there is a problem that a large amount of foreign matter is generated in the vicinity of the wafer edge, and in some cases, it is not possible to meet the demand for cleaning only the wafer edge portion.

Moreover, in a substrate processing apparatus that holds a substrate by a vacuum suction method, a ring for maintaining a vacuum is generally provided in the vicinity corresponding to the inside of about 1 to 2 mm from the wafer edge portion. However, as described above, when the coating film is removed by performing edge rinsing, a gap is generated due to the absence of the coating film in a portion in contact with the ring surface for maintaining the vacuum, and thus the vacuum is generated. There is a problem that adsorption cannot be performed and the apparatus cannot be automatically charged.
JP-A-11-87458 JP-A-10-154686

  An object of the present invention is to provide a transport member with a cleaning function that is excellent in foreign matter removal performance and transport performance, and in particular, can remove foreign matter efficiently even when a substrate processing apparatus that holds a substrate by a vacuum suction method is used. There is to do. Another object of the present invention is to provide a cleaning method for a substrate processing apparatus using such a conveying member with a cleaning function.

  The present inventors diligently studied to solve the above problems. As a result, it has been found that the above problem can be solved by providing a recess on at least one side of the conveying member and providing a cleaning layer in the recess, and the present invention has been completed.

  In the transport member with a cleaning function of the present invention, a recess is provided on at least one surface of the transport member, and a cleaning layer is provided in the recess.

  In a preferred embodiment, all of the recesses are embedded with a cleaning layer.

  In a preferred embodiment, the bottom surface of the transport member, the top surface of the cleaning layer, and the top surface of the transport member that is a non-recess and on the same side as the recess are substantially flat, and the top surface of the cleaning layer And the top surface of the non-recessed portion have substantially the same height from the bottom surface of the conveying member.

  In a preferred embodiment, the recess is provided by a grinding means.

  In a preferred embodiment, the cleaning layer is provided by a coating means.

  According to another aspect of the present invention, a cleaning method for a substrate processing apparatus is provided. This method includes transporting the transport member with a cleaning function into the substrate processing apparatus.

  As described above, according to the present invention, the cleaning function is excellent in foreign matter removal performance and transport performance, and can remove foreign matters efficiently even when using a substrate processing apparatus that holds a substrate by a vacuum suction method. An attached conveyance member can be provided. In addition, it is possible to provide a method for cleaning a substrate processing apparatus using such a conveying member with a cleaning function.

A. 1 is a schematic cross-sectional view of a transport member with a cleaning function according to a preferred embodiment of the present invention. As shown in FIG. 1, the conveyance member 200 with a cleaning function includes a conveyance member 50, a recess 10 provided on at least one surface (one surface in the illustrated example) of the conveyance member 50, and a cleaning layer 20 provided on the recess 10. And have. In FIG. 1, d indicates the depth of the recess 10, and w indicates the width of the upper surface (52) on the same side as the recess 10, which is a non-recess of the conveying member. In a substrate processing apparatus that holds a substrate by a vacuum suction method, a ring for maintaining a vacuum is generally provided in the vicinity corresponding to the inside of about 1 to 2 mm from the wafer edge portion. By providing an upper surface (52) which is a non-recessed portion and the same side as the recessed portion 10 with a predetermined width w as shown in FIG. 1, a ring surface for maintaining a vacuum is in contact with the upper surface (52), so that there is a gap. It does not occur and sufficient vacuum adsorption is possible.

  As for the conveyance member with a cleaning function of this invention, it is preferable that all the recessed parts 10 are embed | buried with the cleaning layer 20, as shown in FIG. This is because the effects such as efficient removal of foreign substances can be sufficiently exhibited. However, as shown in FIG. 2, the entire recess 10 may not be embedded in the cleaning layer 20 as long as the effects of the present invention are not impaired.

  As shown in FIG. 1, the conveying member with a cleaning function of the present invention is a bottom surface (51) of the conveying member 50, an upper surface (21) of the cleaning layer 20, and a non-recessed portion of the conveying member on the same side as the recessed portion. It is preferred that all of the upper surfaces (52) are substantially flat. This is because the foreign matter removal performance and the transport performance are excellent, and in particular, even when a substrate processing apparatus that holds a substrate by a vacuum suction method is used, effects such as the ability to efficiently remove foreign matters can be sufficiently exhibited. However, as long as the effects of the present invention are not impaired, the bottom surface (51) of the conveying member 50, the upper surface (21) of the cleaning layer 20, and the upper surface (52) of the non-recessed portion of the conveying member and on the same side as the concave portion. At least one may not be substantially planar. For example, as shown in FIG. 3, the upper surface (21) of the cleaning layer 20 may be wavy as long as the effects of the present invention are not impaired.

  As shown in FIG. 1, the transport member with a cleaning function of the present invention is a bottom surface (51) of the transport member 50, an upper surface (21) of the cleaning layer 20, and a non-recessed portion of the transport member 50, which is the same side as the recess. The upper surface (52) of the cleaning member 20 is substantially flat, and the height of the upper surface (21) of the cleaning layer 20 and the upper surface (52) of the non-recess from the bottom surface (51) of the transport member 50 is substantially the same. Are preferably the same. This is because the foreign matter removal performance and the transport performance are excellent, and in particular, even when a substrate processing apparatus that holds a substrate by a vacuum suction method is used, effects such as the ability to efficiently remove foreign matters can be sufficiently exhibited. However, as long as the effect of the present invention is not impaired, the bottom surface (51) of the transport member 50 is composed of the upper surface (21) of the cleaning layer 20 and the non-recessed surface of the transport member 50 and the upper surface (52) on the same side as the recess. The heights from may not be substantially the same. For example, as shown in FIGS. 4 and 5, the upper surface (21) of the cleaning layer 20 and the upper surface (52) that is a non-recessed portion of the conveying member 50 and is on the same side as the recessed portion as long as the effects of the present invention are not impaired. The height from the bottom surface (51) of the conveying member 50 may be different.

  By transporting the transporting member with the cleaning function as described above in the apparatus and contacting / moving it to the site to be cleaned, it can be easily and reliably cleaned and removed without causing a transport trouble due to foreign matter adhering to the apparatus. it can. In particular, foreign matters can be efficiently removed even when a substrate processing apparatus that holds a substrate by a vacuum suction method is used.

B. Transport Member As the transport member 50, any appropriate substrate is used depending on the type of substrate processing apparatus that is a target for removing foreign matter. Specific examples include semiconductor wafers (for example, silicon wafers), flat panel display substrates such as LCDs and PDPs, substrates such as compact disks and MR heads.

  The conveying member 50 is provided with a recess 10 on at least one side. Any appropriate means can be adopted as means for providing the recess 10. Preferably, the recess 10 is provided by grinding means using a back grinder or the like.

  Any appropriate depth can be adopted as long as the depth d of the recess 10 is smaller than the thickness of the transport substrate 50. Preferably, it is 0.1-100 micrometers, More preferably, it is 0.1-50 micrometers.

  Any appropriate length can be adopted as the width w of the upper surface (52) which is a non-recessed portion of the conveying member 50 and on the same side as the recessed portion 10, as long as the effects of the present invention are not impaired. Preferably, it is 0.1-50 mm, More preferably, it is 0.1-10 mm.

C. Cleaning Layer In the present invention, the cleaning layer 20 is an application layer formed by applying a liquid material by an application means such as a coating type or a jet type, a printing means such as screen printing, or a combination thereof. Preferably, the cleaning layer is provided by application means.

  In the present invention, the recess 10 is provided on at least one surface of the transport member 50, and the cleaning layer 20 is provided in the recess 10. As described above, by providing the cleaning layer 20 in the concave portion 10, the crown of the edge portion does not occur, and a good cleaning layer shape can be obtained.

  Any appropriate coating-type application method can be adopted as the coating-type application means. Typical examples include a spin coater and a cycle coater.

  Any appropriate spraying application method can be adopted as the spraying application means. Typically, for example, ink jet injection is used.

  The cleaning layer 20 preferably has an uneven shape having an arithmetic average roughness Ra of 0.05 μm or less on the surface and a maximum height Rz of 1.0 μm or less. By having such arithmetic average roughness and maximum height, the cleaning layer 20 has a surface shape that is significantly larger than a smooth surface and has a surface shape with a small unevenness (depth). . When the cleaning layer has such a specific surface shape, foreign substances having a predetermined particle diameter (typically 0.2 to 2.0 μm) can be removed very efficiently. The arithmetic average roughness Ra is preferably 0.04 μm or less, more preferably 0.03 μm or less. On the other hand, the lower limit of the arithmetic average roughness Ra is preferably 0.002 μm, and more preferably 0.004 μm. The maximum height Rz is preferably 0.8 μm or less, more preferably 0.7 μm or less. On the other hand, the lower limit of the maximum height Rz is preferably 0.1 μm, more preferably 0.2 μm, and particularly preferably 0.3 μm. Both arithmetic average roughness and maximum height are defined in JIS B0601. The arithmetic average roughness and the maximum height are measured, for example, by the following procedure: In a stylus type surface roughness measuring device (manufactured by Tencor, product name P-11), the tip portion has a curvature of 2 μm. Using a stylus, data is acquired at a needle pressing force of 5 mg, a measurement speed of 1 μm / second (measurement length of 100 μm), and a sampling period of 200 Hz. The arithmetic average roughness is calculated as a cutoff value of 25 to 80 μm.

The actual surface area per 1 mm ² of the cleaning layer 20 is preferably 150% or more, more preferably 160% or more, and most preferably 170% or more with respect to the actual surface area per 1 mm ² of the silicon wafer mirror surface. . On the other hand, the actual surface area per 1 mm ^{2 of the} cleaning layer is preferably 220% or less, more preferably 200% or less, relative to the actual surface area per 1 mm ² of the silicon wafer mirror surface. By having such a surface roughness, foreign substances having a predetermined particle diameter (typically 0.2 μm or more, preferably 0.2 to 2.0 μm) can be removed very efficiently. The real surface area per 1 mm ^{2 of the} plane is measured, for example, by the following procedure: using an ultra-deep color 3D shape measurement microscope (Keyence, VK-9500), the sample is on an 8-inch silicon wafer, on glass or A film having a cleaning layer formed thereon was used, the measurement positions were 10 mm, 50 mm and 90 mm from the center, the measurement area was 1 mm × 1 mm, and the average value of three locations was the surface area.

  As long as it has the surface shape (surface roughness) as described above, any appropriate shape can be adopted as the uneven shape of the cleaning layer 20. Specific examples of the concavo-convex shape include a groove shape, a stripe shape, a protrusion shape, a dimple shape, and a rough surface shape such as a sandpaper surface. A groove shape is preferred. Although it is not theoretically clear, it is because the foreign matter removal performance is excellent.

  The tensile elastic modulus of the cleaning layer 20 is preferably 2000 MPa or less, more preferably 0.5 to 2000 MPa, and further preferably 1 to 1000 MPa in the operating temperature range of the cleaning layer. When the tensile modulus is in such a range, a cleaning layer excellent in the balance between the foreign matter removal performance and the conveyance performance can be obtained. The tensile elastic modulus is measured according to JIS K7127.

  The cleaning layer 20 has, for example, a 180-degree peeling adhesive force with respect to the mirror surface of the silicon wafer, preferably 0.2 N / 10 mm width or less, and more preferably 0.01 to 0.10 N / 10 mm width. Within such a range, the cleaning layer has good foreign matter removal performance and transport performance. 180 degree peeling adhesive strength is measured according to JIS Z0237.

  As the thickness of the cleaning layer 20, any appropriate thickness can be adopted as long as the effects of the present invention are not impaired. Preferably it is 5-100 micrometers, More preferably, it is 10-50 micrometers. If it is such a range, the cleaning layer excellent in the balance of the removal performance of a foreign material and conveyance performance can be obtained.

  The material constituting the cleaning layer 20 will be described. As a material constituting the cleaning layer 20, any appropriate material can be adopted depending on the purpose and the method of forming the unevenness. Specific examples of the material constituting the cleaning layer 20 include a heat resistant resin and an energy ray curable resin. A heat resistant resin is preferred. By adopting a heat-resistant resin, for example, it can be used in equipment used at high temperatures such as ozone asher, resist coater, oxidation diffusion furnace, atmospheric pressure CVD equipment, low pressure CVD equipment, plasma CVD equipment, etc. It can be used without causing poor transport and contamination within the device.

  In the present invention, the material constituting the cleaning layer may be used for coating as it is to form the cleaning layer, or may be dissolved in any appropriate solvent to form the cleaning layer.

  The heat resistant resin is preferably a resin that does not contain a substance that contaminates the substrate processing apparatus. An example of such a resin is a heat resistant resin used in a semiconductor manufacturing apparatus. Specific examples include polyimide and fluororesin. Polyimide is preferred.

  Preferably, the polyimide can be obtained by imidizing a polyamic acid having a butadiene-acrylonitrile copolymer skeleton in the main chain. The polyamic acid can be obtained by reacting a tetracarboxylic dianhydride component and a diamine component in a substantially equimolar ratio in any appropriate organic solvent.

  Examples of the tetracarboxylic dianhydride component include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3 , 3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxy) Eniru) sulfone dianhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic acid dianhydride. These may be used alone or in combination of two or more.

Examples of the diamine component include diamines having a butadiene-acrylonitrile copolymer skeleton. Specific examples include aliphatic diamines represented by the following chemical formula. Such aliphatic diamines may be used alone or in combination with other diamines. Examples of the diamine used in combination include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, and p-phenylene. Diamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'- Diaminodiphenyl sulfide, 4,4′-diaminodiphenylsulfone, 3,3′-diaminodiphenylsulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1, 3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2 2-dimethylpropane, hexamethylenediamine, 1,8-diaminooctane, 1,12-diaminododecane, 4,4′-diaminobenzophenone, 1,3-bis (3-aminopropyl) -1,1,3,3 -Tetramethyldisiloxane.

  Examples of the organic solvent used in the reaction of the tetracarboxylic dianhydride and diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, and N, N-dimethylformamide. In order to adjust the solubility of raw materials and the like, a nonpolar solvent (for example, toluene or xylene) may be used in combination.

  The reaction temperature between the tetracarboxylic dianhydride and the diamine is preferably 100 ° C. or higher, more preferably 110 to 150 ° C., particularly when a diamine containing a butadiene-acrylonitrile copolymer skeleton is used. With such a reaction temperature, gelation can be prevented. As a result, the gel content does not remain in the reaction system, so that clogging or the like during filtration is prevented, and removal of foreign substances from the reaction system is facilitated. Further, at such a reaction temperature, a uniform reaction can be realized, and thus variations in characteristics of the obtained resin can be prevented.

  The imidization of the polyamic acid is typically performed by heat treatment under an inert atmosphere (typically vacuum or nitrogen atmosphere). The heat treatment temperature is preferably 150 ° C. or higher, more preferably 180 to 450 ° C. If it is such temperature, the volatile component in resin can be removed substantially completely. Moreover, oxidation and deterioration of the resin can be prevented by processing in an inert atmosphere.

  The energy ray curable resin is typically a composition containing an adhesive substance, an energy ray curable substance, and an energy ray curing initiator.

  Any appropriate adhesive substance is adopted as the adhesive substance depending on the purpose. The weight average molecular weight of the adhesive substance is preferably 500 to 1,000,000, more preferably 600 to 900,000. The pressure-sensitive adhesive material may be a mixture of appropriate additives such as a crosslinking agent, a tackifier, a plasticizer, a sizing agent, and an anti-aging agent. In one embodiment, a pressure sensitive adhesive polymer is used as the adhesive material. The pressure-sensitive adhesive polymer is suitably used when a nozzle method (described later) is used for forming irregularities on the cleaning layer. A typical example of the pressure-sensitive adhesive polymer is an acrylic polymer having an acrylic monomer such as (meth) acrylic acid and / or (meth) acrylic acid ester as a main monomer. Acrylic polymers can be used alone or in combination. If necessary, an unsaturated double bond may be introduced into the molecule of the acrylic polymer to impart energy ray curability to the acrylic polymer itself. Examples of the method for introducing an unsaturated double bond include a method of copolymerizing an acrylic monomer and a compound having two or more unsaturated double bonds in the molecule, an acrylic polymer and an unsaturated double bond in the molecule. The method of making the functional groups of the compound which has two or more bonds react is mentioned.

  In another embodiment, the adhesive material is rubber, acrylic, vinyl alkyl ether, silicone, polyester, polyamide, urethane, styrene / diene block copolymer, melting point of about 200 ° C. or less, etc. The pressure-sensitive adhesive having improved creep characteristics by blending the above hot-melt resin (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56- No. 13040) is used. These may be used alone or in combination.

  More specifically, the pressure-sensitive adhesive is preferably a rubber-based pressure-sensitive adhesive based on natural rubber or various synthetic rubbers; or methyl group, ethyl group, propyl group, butyl group, amyl group or hexyl group. Alkyl having 20 or less carbon atoms such as heptyl group, 2-ethylhexyl group, isooctyl group, isodecyl group, dodecyl group, lauryl group, tridecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, and eicosyl group. An acrylic pressure-sensitive adhesive comprising a base copolymer of an acrylic copolymer using one or more acrylic acid alkyl esters composed of an ester such as acrylic acid or methacrylic acid having a group.

  As the acrylic copolymer, any appropriate acrylic copolymer is used depending on the purpose. The acrylic copolymer may have cohesive force, heat resistance, crosslinkability, and the like as necessary. For example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itotanic acid, maleic acid, fumaric acid and crotonic acid; ) Hydroxyethyl acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, (meth) acrylic Hydroxyl group-containing monomers such as hydroxydecyl acid, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) -methyl methacrylate; styrene sulfonic acid, allyl sulfonic acid, 2- Sulfonic acid group-containing monomers such as (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid; (meth) acrylamide, N, N -(N-substituted) amide monomers such as dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide; aminoethyl (meth) acrylate, (Meth) acrylic acid aminoethyl, (meth) acrylic acid N, N-dimethylaminoethyl, (meth) acrylic acid alkylylamino monomer such as t-butylaminoethyl (meth) acrylate; (meth) methacrylic acid methoxyethyl, (Meta (Meth) acrylic acid alkoxyalkyl monomers such as ethoxyethyl acrylate; maleimide monomers such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide; N-methylitaconimide, N-ethyl Itaconimide monomers such as itacimide, N-butyl itaconimide, N-octyl itaconimide, N-2-ethylhexylitaconimide, N-cyclohexyl leuconconimide, N-lauryl itaconimide; N- (meth) acryloyloxymethylene succinimide, Succinimide monomers such as N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylene succinimide; acetic acid Vinyl, vinyl propionate, N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, bunyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imidazole, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, styrene , Α-methylstyrene, vinyl monomers such as N-vinylcaprolactam; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy group-containing acrylic monomers such as glycidyl (meth) acrylate; polyethylene glycol (meth) acrylate; Such as (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol Glycol acrylic ester monomers; (meth) acrylic acid tetrahydrofurfuryl, fluorine (meth) acrylate, silicone (meth) acrylate, acrylic acid ester monomers such as 2-methoxyethyl acrylate; hexanediol di (meth) acrylate, (poly ) Ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri ( Multifunctional mono, such as (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate 2 or more kinds of copolymer such as mer; appropriate monomers such as isoprene, butadiene, isobutylene, vinyl ether; The blending ratio of these monomers is appropriately set according to the purpose.

  The energy ray-curable material is an arbitrary material that can function as a crosslinking point (branch point) when reacting with the adhesive material by energy rays (preferably light, more preferably ultraviolet rays) to form a three-dimensional network structure. Any suitable material may be employed. A typical example of the energy ray-curable substance is a compound having one or more unsaturated double bonds in the molecule (hereinafter referred to as a polymerizable unsaturated compound). Preferably, the polymerizable unsaturated compound is non-volatile and has a weight average molecular weight of 10,000 or less, more preferably 5,000 or less. If it is such molecular weight, the said adhesive substance can form a three-dimensional network structure efficiently. Specific examples of energy ray curable materials include phenoxy polyethylene glycol (meth) acrylate, ε-caprolactone (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meta) ) Acrylates, trimethylolpropane tri (meth) acrylate, dipentaerythritol ruhexa (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, oligoester (meth) acrylate Examples thereof include tetramethylolmethane tetra (meth) acrylate, pentaerythritol monohydroxypentaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, and polyethylene glycol diacrylate. These may be used alone or in combination. The energy ray curable substance is preferably used at a ratio of 0.1 to 50 parts by weight with respect to 100 parts by weight of the adhesive substance.

  Moreover, you may use energy-beam curable resin as an energy-beam curable substance. Specific examples of the energy ray curable resin include ester (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, melamine (meth) acrylate, acrylic resin (meth) having a (meth) acryloyl group at the molecular terminal. Photosensitive reactive group-containing polymers such as acrylates, thiol-ene addition type resins having an allyl group at the molecular end, photocationic polymerization type resins, cinnamoyl group-containing polymers such as polyvinyl cinnamate, diazotized amino novolak resins and acrylamide type polymers Or an oligomer etc. are mentioned. Furthermore, examples of the polymer that reacts with energy rays include epoxidized polybutadiene, unsaturated polyester, polyglycidyl methacrylate, polyacrylamide, and polyvinylsiloxane. These may be used alone or in combination. The weight average molecular weight of energy beam curable resin becomes like this. Preferably it is 50-1 million, More preferably, it is 600-900,000.

  Any appropriate curing initiator (polymerization initiator) may be employed as the energy ray curing initiator depending on the purpose. For example, when heat is used as the energy beam, a thermal polymerization initiator is used, and when light is used as the energy beam, a photopolymerization initiator is used. Specific examples of the thermal polymerization initiator include benzoyl peroxide and azobisisobutyronitrile. Specific examples of the photopolymerization initiator include benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and 2,2-dimethoxy-1,2-diphenylethane-1-one; substituted benzoins such as anisole methyl ether Ether; Substituted acetophenone such as 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxy-cyclohexyl ruphenyl ketone; Ketal such as benzylmethyl ketal and acetophenone diethyl ketal; Chlorothioxanthone, dodecylthioxanthone , Xanthones such as cymethylthioxanthone; benzophenones such as benzophenone and Michler's ketone; substituted amides such as 2-methyl-2-hydroxypropiophenone Ferketol; aromatic sulfonyl chlorides such as 2-naphthalenesulfonyl chloride; photoactive oximes such as 1-phenyl-1,1-propanedione-2- (o-ethoxycarbonyl) -oxime; benzoyl; cibenzyl; α-hydroxycyclohexyl Phenylketone; 2-hydroxymethylphenylpropane. The energy ray curing initiator is preferably used at a ratio of 0.1 to 10 parts by weight with respect to 100 parts by weight of the energy ray curable substance.

  The material constituting the cleaning layer may further contain any appropriate additive depending on the purpose. Specific examples of the additive include a surfactant, a plasticizer, an antioxidant, a conductivity imparting material, an ultraviolet absorber, and a light stabilizer. By adjusting the kind and / or amount of the additive used, a cleaning layer having desired characteristics according to the purpose can be obtained. For example, the addition amount of the additive is preferably 0.01 to 100 parts by weight, more preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the adhesive substance.

Any appropriate energy beam can be adopted as the energy beam depending on the purpose. Specific examples include ultraviolet rays, electron beams, radiation, heat and the like. Preferably, it is ultraviolet rays. The wavelength of the ultraviolet light is appropriately selected according to the purpose, and the center wavelength is preferably 320 to 400 nm. Examples of the ultraviolet ray generation source include a high-pressure mercury lamp, a medium-pressure mercury lamp, a Xe-Hg lamp, and a deep UV lamp. The UV integrated light quantity is appropriately set according to the purpose. Specifically, the UV integrated light quantity is preferably 100 to 8000 mJ / cm ² , more preferably 500 to 5000 mJ / cm ² .

  The energy beam may be applied to the entire cleaning layer forming material (energy beam curable resin) or may be selectively applied to a predetermined position. The area ratio between the irradiated portion and the non-irradiated portion can be appropriately set according to the purpose. For example, when emphasis is placed on the transportability within the apparatus, the transportability within the apparatus may be improved by relatively increasing the area ratio of the irradiated portion. On the other hand, when the foreign matter collecting property is more important than the in-apparatus transportability, the foreign matter collecting property may be improved by relatively increasing the area ratio of the non-irradiated portion. By adjusting the area ratio, it is possible to obtain a cleaning layer in which the foreign matter collecting performance and the transport performance have a desired balance. As a method of selectively irradiating energy rays, any appropriate method is adopted depending on the purpose. For example, a method of producing a mask having a predetermined pattern using an energy ray-shielding material and irradiating the energy ray through the mask; And a method of applying energy rays through a separator on the cleaning layer side. Moreover, the pattern which shields an energy ray can be suitably set according to the objective. Specific examples include a lattice shape, a polka dot shape, a checkered shape, and a mosaic shape.

C. Cleaning Method A cleaning method according to a preferred embodiment of the present invention is a method for transporting the transport member with a cleaning function into a desired substrate processing apparatus and bringing it into contact with the site to be cleaned, thereby removing foreign matter adhering to the site to be cleaned. It can be removed easily and reliably. In particular, foreign matters can be efficiently removed even when a substrate processing apparatus that holds a substrate by a vacuum suction method is used.

  The substrate processing apparatus cleaned by the cleaning method is not particularly limited. Specific examples of the substrate processing apparatus include various apparatuses such as an exposure irradiation apparatus for circuit formation, a resist coating apparatus, a sputtering apparatus, an ion implantation apparatus, a dry etching apparatus, and a wafer prober in addition to the apparatuses already described in this specification. And a substrate processing apparatus used at high temperatures such as an ozone asher, an oxidation diffusion furnace, an atmospheric pressure CVD apparatus, a low pressure CVD apparatus, and a plasma CVD apparatus.

EXAMPLES Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited by these Examples. In the examples, “parts” are based on weight.
<Tensile modulus>
The measurement was performed according to JIS K7127. Specifically, after forming a cleaning layer on a predetermined substrate, the cleaning layer was peeled off and measured using a dynamic viscoelasticity measuring apparatus.

  Ethylene-1,2-bistrimellitate, tetracarboxylic dianhydride (manufactured by Shin Nippon Rika Co., Ltd., trade name: TMEG-100), diamine (manufactured by Ube Industries, trade name: ATBN, Mw = 1800), 2, 2'-bis [4- (4-aminophenoxy) phenyl] propane (manufactured by Wakayama Seika Co., Ltd.) was blended in a molar ratio of 1: 0.5: 0.5, and N-methyl-2-pyrrolidone A varnish A of polyamic acid (polyimide precursor) having a solid content of 30% and a viscosity of 720 mPa was obtained using (NMP) as a solvent.

  The mirror surface of the 8-inch silicon wafer (thickness: 725 μm) was ground with a grinder (manufactured by DISCO, model number: DAG810) leaving an outer peripheral portion of 2 mm to form a recess having a depth of 5 μm. Thereafter, standard RCA cleaning was performed to obtain a recessed silicon wafer.

  The resulting concave silicon wafer was set on a spin coater (model number: 1H-DX2 manufactured by Mikasa Co., Ltd.) with the concave side facing upward, and varnish A was applied to the concave so that the wet thickness was 17 μm. Next, after drying at 90 ° C. for 10 minutes on a hot plate, curing was performed at 282 ° C. × 90 minutes in a vacuum drying furnace to obtain an 8-inch wafer-like transport member A with a cleaning function. When the boundary between the non-ground part and the cleaning layer was observed with a 50 × optical microscope, it was confirmed that the boundary was buried without any gap.

  As a result of measuring the tensile elastic modulus (according to JIS K7127) of the cleaning layer of the conveying member A with a cleaning function, it was 390 MPa.

  After transporting this transport member A with a cleaning function to a dry etching apparatus (manufactured by Tokyo Electron, model number: TE-8500) having an electrostatic attraction mechanism with the cleaning surface facing downward, the wafer stage was confirmed and the wafer edge The reaction product existing in the vicinity of the part was removed. Moreover, when the conveyance member A with a cleaning function was confirmed, the reaction product was confirmed by the cleaning surface.

In addition, when another transport member A with a cleaning function is transported to an I-line stepper device (manufactured by Nikon Corporation, model number: NSR-2205i11) having a vacuum suction mechanism with a cleaning surface facing downward, the device causes a suction error. Never stopped.
[Comparative Example 1]

  An 8-inch silicon wafer was set on a spin coater (manufactured by Mikasa, model number: 1H-DX2), and varnish A was applied in the same manner as in Example 1. Next, after drying at 90 ° C for 10 minutes on a hot plate, while rotating at 500 rpm, NMP is dropped for 10 minutes with a syringe so that it is directly applied to the crown portion, and the coating film is removed with a width of 5 mm from the wafer edge. did. Subsequently, it was cured at 282 ° C. for 90 minutes in a vacuum drying furnace to obtain an 8-inch wafer-like transport member B with a cleaning function.

  After this transport member B with a cleaning function was transported to a dry etching apparatus (manufactured by Tokyo Electron, model number: TE-8500) having an electrostatic attraction mechanism with the cleaning surface facing downward, the wafer stage was confirmed and the wafer edge The reaction product remained fixed in the vicinity of the part.

  Also, when another new transport member B with a cleaning function is transported to an I-line stepper device (Nikon Corporation, model number: NSR-2205i11) having a vacuum suction mechanism, a suction error occurs. The device stopped.

  The carrying member with a cleaning function of the present invention is suitably used for cleaning substrate processing apparatuses such as various manufacturing apparatuses and inspection apparatuses.

It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention. It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention. It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention. It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention. It is a schematic sectional drawing of the conveyance member with a cleaning function by preferable embodiment of this invention.

Explanation of symbols

10 Concave portion 20 Cleaning layer 50 Conveying member 200 Conveying member with cleaning function

Claims (6)

A recess is provided on at least one side of the conveying member, and a cleaning layer is provided in the recess.
Conveying member with cleaning function.   The conveying member with a cleaning function according to claim 1, wherein all of the recesses are embedded with a cleaning layer. The bottom surface of the transport member, the top surface of the cleaning layer, and the top surface of the transport member that is a non-recess and on the same side as the recess are all substantially flat,
The conveying member with a cleaning function according to claim 1 or 2, wherein the upper surface of the cleaning layer and the upper surface of the non-recessed portion have substantially the same height from the bottom surface of the conveying member.   The conveyance member with a cleaning function according to claim 1, wherein the concave portion is provided by a grinding means.   The conveyance member with a cleaning function according to claim 1, wherein the cleaning layer is provided by an application unit. A method for cleaning a substrate processing apparatus, comprising transporting the transport member with a cleaning function according to claim 1 into the substrate processing apparatus.

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