JP2006013185A - Method of reproducing cleaning member for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for reproducing a cleaning member for a semiconductor device with which particles stuck on the top layer of the used cleaning member are removed, and the surface state of the cleaning member similar to a new article is reproduced. <P>SOLUTION: In a method of reproducing a cleaning member for a semiconductor device, a cleaning layer 2 comprised of a heat resistant resin resulting from heat-curing polyamic acid is provided on at least one side of a wafer 1, and particles stuck on the top layer of the cleaning layer are removed using a dry etching system. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a method for regenerating a cleaning member that has been transferred into a semiconductor device and cleaned to remove particles adhering to the device, that is, a method for removing particles adhering to a cleaning layer and transporting them again into a semiconductor device. .

In the substrate processing apparatus, each transport system and the substrate are transported while being physically contacted by means such as an adsorption mechanism or electrostatic suction. At that time, if particles (foreign matter) adhere to the substrate or transport system, subsequent substrates will be contaminated one after another. Therefore, it is necessary to periodically stop and clean the device, resulting in a decrease in operating rate and a large amount. There was a problem that a lot of labor was required.

In order to solve this problem, a method of transporting a substrate to which an adhesive substance is fixed and cleaning and removing particles adhering to the inside of the apparatus (see Patent Document 1), a plate-like member is transported, and particles adhering to the back surface of the substrate are removed. A removal method (see Patent Document 2) has been proposed.
JP-A-10-154686 Japanese Patent Publication No. 11-87458

The above proposed method is an effective method for avoiding a reduction in operating rate and a great amount of labor without having to stop the apparatus and perform a cleaning process. However, the method of transporting the substrate to which the adhesive substance is fixed has a difficulty in that the adhesive substance adheres strongly to the contact portion in the apparatus, and it is difficult to transport the inside of the apparatus well. Easier to remove particles.

For this reason, the present applicants cleaned at least one surface of a wafer (bare wafer) in a semiconductor device such as a semiconductor manufacturing device or an inspection device in order to clean a wafer transfer device or a wafer fixing chuck table. By providing a heat-resistant resin made of polyimide resin as a layer to produce a cleaning member for a semiconductor device and transporting it into the semiconductor device, there is no trouble such as strong adhesion to the device contact portion. It has been found that particles adhering to can be effectively removed.

By the way, even in a cleaning member provided with such a heat-resistant resin, particles adhered to the device are transported several times in the semiconductor device in the same manner as the conventional substrate to which the adhesive material is fixed. After removing and attaching a considerable amount of particles to the surface of the cleaning layer, the cleaning effect is almost lost. For this reason, the cleaning member after cleaning has been discarded.

However, the above disposal has an environmental problem, and it is desirable to remove attached particles and recycle them as cleaning members. Therefore, attempts have been made to remove the above-mentioned particles by performing brush cleaning or ultrasonic cleaning using pure water. However, such wet cleaning does not sufficiently remove adhered particles, It was very difficult to recycle.

In view of such circumstances, the present invention provides a method for regenerating a cleaning member for a semiconductor device that removes particles adhering to the surface layer of a used cleaning member and regenerates the surface state of a cleaning member similar to a new one. It is an issue.

As a result of diligent investigations on the above problems, the present inventors have cleaned particles adhering to the inside of the semiconductor device by transporting it into the semiconductor device in a cleaning member using a heat-resistant resin made of polyimide resin or the like as a cleaning layer. After removing the particles adhering to the surface layer of the cleaning layer by a dry etching method using plasma or laser, the particles can be effectively removed and new contamination such as the wet method can be removed. Knowing that it can be easily and reliably restored to the surface of a new cleaning member without causing it and can be sufficiently recycled as a cleaning member to be transported again into the semiconductor device, the present invention has been completed.

The present invention is a method for regenerating a cleaning member for a semiconductor device in which a cleaning layer made of a heat-resistant resin obtained by thermosetting polyamic acid is provided on at least one surface of a wafer, wherein particles adhering to the surface layer of the cleaning layer are removed. The present invention relates to a method for regenerating a cleaning member for a semiconductor device, which is removed using a dry etching method.

Further, the present invention transports a cleaning member having a cleaning layer made of a heat-resistant resin obtained by thermosetting polyamic acid on at least one surface of a wafer into a semiconductor device, and cleans particles adhering to the device. The present invention relates to a method for regenerating a cleaning member for a semiconductor device, wherein after the removal, particles adhering to the surface layer of the cleaning layer of the cleaning member are removed using a dry etching method.

Furthermore, the present invention uses a plasma etching apparatus as the dry etching method, and in particular, a method for regenerating a cleaning member for a semiconductor device having the above structure using a medium frequency region in which the oscillation frequency of plasma is 50 kHz or less, and the dry etching. As a method, it is possible to provide a method for regenerating a cleaning member for a semiconductor device having the above-described configuration using a laser beam having a wavelength of light in an ultraviolet region having a wavelength of 600 nm or less.

As described above, the present invention can restore the surface state equivalent to that of a new cleaning layer by using the dry etching method even in a cleaning member in which the particle removal performance is saturated, that is, the removal performance is lost. The particle removal performance itself can be reproduced. If this method is used, it is possible to regenerate a new cleaning member by simply performing a surface layer regeneration process without wasteful use of an expensive silicon wafer, thereby simplifying the process and reducing manufacturing costs. It becomes possible.

Embodiments of the present invention will be described below.
1A and 1B show an example of a cleaning member for a semiconductor device used in the present invention. FIG. 1A is a schematic sectional view and FIG. 1B is a top view.

In FIG. 1, 1 is a wafer (bare wafer), 2 is a cleaning layer made of a heat-resistant resin obtained by thermosetting polyamic acid provided on one side of the wafer 1, and the wafer 1 is exposed at the outer peripheral edge. A portion 12 is provided. The lot management of the cleaning member can be performed by reading a mark (not shown) preliminarily laser-marked on the surface of the wafer 1 of the exposed portion 12.

In the above example, the cleaning layer 2 is provided only on one side of the wafer 1, but the cleaning layer 2 may be provided on both sides of the wafer 1. In this case, the exposed portion 12 may be provided on the cleaning layer 2 on both sides or only on the cleaning layer 2 on one side. Further, when the cleaning layer 2 on one side or both sides of the wafer 1 is provided as described above, the exposed portion 12 may not be provided.

For example, such a cleaning member for a semiconductor device is formed by applying a coating solution made of a polyamic acid solution on the wafer 1 and drying it, followed by thermosetting (curing) at a high temperature for imidization. It can manufacture by forming the cleaning layer 2 which becomes.

A coating solution comprising the above polyamic acid solution can be prepared according to a known method. Specifically, a tetracarboxylic dianhydride, trimellitic anhydride or a derivative thereof and a diamine compound are subjected to a condensation reaction in an appropriate organic solvent such as N-methyl-2-pyrrolidone. It can be prepared as a solution of an imide precursor.

Examples of the tetracarboxylic dianhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3 , 3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 2,2', 3,3'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxy) Eniru) sulfone dianhydride, pyromellitic dianhydride, include ethylene glycol bis trimellitic dianhydride, They may be used alone or in combination of two or more.

Examples of the diamine compound include 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, 4,4'- Diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4 '-Diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-amino Phenoxy) benzene, 1,3-bis (4 Aminophenoxy) -2,2-dimethylpropane, hexamethylenediamine, 1,8-diaminooctane, 1,12-diaminododecane, 4,4'-diaminobenzophenone, 1,3-bis (3-aminopropyl) -1 1,3,3-tetramethyldisiloxane and the like.

The method for applying such a coating solution on the wafer 1 is not particularly limited as long as it can make the film thickness uniform. Specific examples include spin coating, spray coating, die coating, vapor deposition polymerization using a vacuum deposition method, and nozzle coating in which scanning is performed while discharging a coating liquid from a nozzle. Among these, spin coating is particularly preferable. Hereinafter, this spin coating will be described in detail.

In spin coating, a coating solution is dropped onto the center of the wafer 1 by a dispenser, and then the wafer is rotated at high speed. The rotation speed is selected in the range of 500 to 2,000 rpm, preferably in the range of 900 to 1,500 rpm.

In addition, since the time until the set rotational speed is reached also greatly affects the uniformity of the film thickness, the set rotational speed is reached at an acceleration of 5,000 rpm / sec or more, particularly preferably 10,000 rpm / sec or more. It is good.

As the viscosity of the coating solution, a range of 10 to 10,000 mPa · sec can be selected, but it is preferably set to a range of 500 to 3,000 mPa · sec from the viewpoint of a film thickness that can ensure particle dust removal. It is good.

Also, the coating thickness can be adjusted to 1 to 300 μm, but it is better to be thinner in terms of film thickness uniformity, and from the point of dust removal, the thicker the film thickness, the better the unevenness followability. . In consideration of these balances, it is preferable to control in the range of 10 to 100 μm.

In this spin coating, a raised portion is generated at the outer peripheral end of the wafer 1. The portion is flattened by dropping and dissolving the same organic solvent as that used for the coating solution by an edge rinse method as a rinse solution. Further, after this planarization, a coating solution similar to that described above is further dropped, so that the dissolution progresses, and finally reaches the position where the surface of the wafer 1 is exposed, and an uncoated portion is formed at the outer peripheral end. The exposed portion 12 becomes.

The position where the rinse liquid is dropped can be controlled by an actuator using a ball screw. As the accuracy, the uncoated area can be determined by controlling at ± 100 μm, but preferably the uncoated width can be more accurately controlled by controlling at an accuracy of ± 10 μm. Further, it is important that the dropping position is scanned from the inside to the outside of the wafer at a constant speed, and an exposed portion of a wide area can be formed by scanning.

When scanning to the outside, it is inappropriate to scan to the outermost periphery, and it is desirable to stop at a portion of 3 mm from the notched edge existing on the wafer. The reason is that the rinsing liquid jumps up at the notch and scatters to the center. The scattered rinsing liquid may cause a small sag dissolved in the central portion to be kept flat, which may impair the dust removal performance.

After coating in this way, it is dried. Drying is a process for solidifying the coating liquid, which is a fluid, and suppressing the flow of the liquid due to handling in a subsequent process. In this drying step, conditions for drying most of the solvent components are good and 70 to 150 ° C. can be set. However, in terms of film deterioration, the temperature should be low, and the temperature should be high in terms of solvent drying efficiency. Good. In consideration of these balances, it is desirable to set the temperature to 90 to 100 ° C.

After the above drying, curing is performed at a high temperature to imidize. Although the curing temperature and temperature rise profile vary depending on the type of polyimide, it is usually preferable to raise the temperature from room temperature to about 3 ° C./min. The maximum cure temperature is preferably 200 ° C. or higher, and the hold time is set according to the characteristics of the material. At this time, it is desirable to perform the curing in a nitrogen atmosphere in order to prevent the film characteristics from deteriorating. The oxygen concentration is preferably set to 100 ppm or less, and a film having good characteristics can be obtained when the oxygen concentration is preferably lowered to 20 ppm.

After such a curing process, the semiconductor device cleaning of the present invention has a cleaning layer 2 made of a heat-resistant resin obtained by thermosetting polyamic acid on the wafer 1 by further passing through a required process according to a conventional method. A member is manufactured.

In this cleaning member, particles may adhere to the back surface through the above-described required steps, resulting in contamination. The particles must be removed for the original purpose of the cleaning member. The above contamination may be caused by adhesion from the chuck table in each process. In particular, particles adhering to the adsorption table are applied with an external force called adsorption force, so that they adhere more firmly to the back surface of the wafer and deeply penetrate into the SiO _2. It cannot be removed easily.

Examples of the cleaning method for removing particles firmly adhered to the back surface include spin cleaning in which a cleaning agent is applied while rotating the wafer, and dip cleaning in which a plurality of wafers are immersed in a chemical solution simultaneously. In spin cleaning, physical cleaning such as brush, two-fluid, and ultrasonic waves called megasonic can be effectively added.

In chemical cleaning that is used in combination with physical cleaning, it is effective to use alternate treatment of ozone water and dilute hydrofluoric acid, and SiO ₂ around the entrained particles is removed by dilute hydrofluoric acid that has the ability to dissolve SiO ₂ . In addition, the surface of the particles oxidized by ozone water can be dissolved to be detached from the wafer surface.

By repeating such treatment alternately, it is possible to remove particles as well as light metal contaminants adhering to the SiO ₂ surface. In general, it is said that metal atoms must be less than 1.0 × 10 ⁻¹⁰ atoms / cm ² in order to produce a good semiconductor element in a semiconductor process. In order to satisfy this standard, it is desirable to add dilute hydrofluoric acid cleaning.

Further, in the brush cleaning described above, since the brush itself becomes soiled by repeated cleaning, it is necessary to periodically clean the brush. In order to prevent recontamination from the brush, hydrogen water in which hydrogen gas is dissolved in ultrapure water is used together with Megasonic to effectively prevent recontamination. At this time, the pH of the hydrogen water is preferably set to 9.0 or more, and the reattachment of particles can be prevented by an electrostatic repulsive force (zeta potential).

In the present invention, particles adhering to the semiconductor device are removed using the cleaning member manufactured in this way. This removal operation may be carried out in accordance with a conventional method by simply transporting the cleaning member into the semiconductor device.

At that time, the direction of the cleaning layer of the cleaning member is set so as to be in contact with the table surface for fixing the wafer to be cleaned by removing particles, for example. When transported in this way, it is placed on a wafer fixing table by a robot hand. In the case of an electrostatic chuck table, an electrostatic chucking force is applied. In the case of a vacuum chuck table, the vacuum chucking force is applied to the table. Fixed.

The cleaning layer of the cleaning member is pressed against the table surface by the adsorption force at this time, and particles existing on the table surface are transferred to the surface of the cleaning layer by the physical adsorption force or the chemical adsorption force.

Usually, by repeating such a transfer operation a plurality of times, almost all particles adhering to the wafer fixing table can be collected.

In the present invention, the particles are thus collected and the cleaning member whose cleaning ability is saturated, that is, the cleaning ability is lost, is regenerated by the dry etching method. That is, particles adhering to the surface layer of the cleaning layer are removed by a dry etching method, and the surface state of the cleaning member is restored to that of a new member.

The dry etching method is not particularly limited as long as it can etch the surface of the heat resistant resin constituting the cleaning layer. For example, a plasma etching apparatus, an excimer laser apparatus, a YAG laser apparatus, a carbon dioxide gas laser apparatus, a semiconductor laser apparatus, an electron beam irradiation apparatus, a synchrotron radiation irradiation apparatus, or the like is used.

In order to keep the surface shape after dry etching on the cleaning layer as smooth as the state after new coating, it is desirable that the etching ability is not so high, and it is industrially versatile in terms of photon cost. The technology that is being used is desirable. From this point of view, it is particularly desirable to use a plasma etching apparatus, and an excimer laser apparatus or a YAG having an Nd-doped YAG solid crystal as an apparatus that uses a laser beam having a wavelength of light in the ultraviolet region of 600 nm or less. It is suitable to use a laser device.

In the plasma etching apparatus, both the MHz class and the kHz class can be used as the oscillation frequency band, but it is suitable to use a medium frequency region in which the plasma oscillation frequency is 50 kHz or less, more preferably 40 kHz or less. In terms of acceleration of ions in the plasma, the lower the frequency, the higher the ability of the ions to collide with the surface of the cleaning layer, which is the object to be irradiated, and the ability to etch the cleaning layer.

As the buffer gas, which is a medium, a gas having high etching ability such as CF4 can be used. However, an etching ability of about 20 nm / min is sufficient, and particles can be removed using Ar gas or O ₂ gas. can do.

In the excimer laser device, it is preferable to use a laser having an oscillation wavelength of 308 nm using XeCl and an oscillation wavelength of 248 nm using KrF. The excimer laser is suitable for irradiating a large area because the beam size is relatively larger than that of other lasers.

The beam size is increased using an optical element called a beam expander that expands the beam shape, and the beam is shaped into a line-shaped beam with a uniform energy density using an optical element called a beam homogenizer to make the energy distribution of the beam uniform. Thus, it is possible to construct an irradiation system that can irradiate the entire surface of the wafer only by scanning in one axial direction.

In the YAG laser device, it is desirable to use the second harmonic or the third harmonic because the thermal effect is large at the fundamental wave of 1064 nm and the surface layer is damaged. The YAG laser device can oscillate at a high repetition frequency even though the beam size is small, so that the entire wafer can be irradiated by scanning at a high speed. At this time, a large area can be scanned at high speed by using a galvanometer mirror that combines two mirrors for moving the beam to an arbitrary position on the XY plane.

In the present invention, by removing particles adhering to the surface layer of the cleaning layer by such a dry etching method, it can be regenerated to the surface state of the cleaning member like a new one. It can be reused as a cleaning member that is transported and removes particles adhering to the apparatus.

Examples of the present invention will be described below in more detail. However, the present invention is not limited only to the following examples.

30.0 g of ethylene-1,2-bistrimelliteate, tetracarboxylic dianhydride (hereinafter referred to as TMEG) represented by the following chemical structural formula was added to 110 g of N-methyl-2-pyrrolidone (hereinafter referred to as TMEG). NMP), 65.8 g of diamine (trade name “1300 × 16ATBN” manufactured by Ube Industries, Ltd., amine equivalent 900, acrylonitrile content 18% by weight), and 2 represented by the following chemical structural formula The mixture was reacted with 15.0 g of 2'-bis [4- (4-aminophenoxy) phenyl] propane (hereinafter referred to as BAPP) at 120 ° C.

After the reaction, a coating solution composed of a polyamic acid solution obtained by cooling was applied to one side of a 12 inch silicon wafer with a spin coater. At that time, the rotation speed of 1,000 rpm is reached at an acceleration of 10,000 rpm / sec in about 0.1 seconds, and then the rotation speed is maintained until 0.5 seconds after the rotation starts, and then the deceleration is 100 rpm / The speed was reduced to 500 rpm in sec, and held at that speed for 40 seconds.

Next, the nozzle position was automatically controlled, and NMP was dropped on the raised portion generated on the outer periphery to perform edge rinsing and flattened. Then, it dried at 90 degreeC for 20 minutes.

Next, it is put in the spin coater again, and the nozzle position is automatically controlled in the same way as the edge rinse, and the nozzle is scanned from the center side toward the outer peripheral part by the desired width to dissolve a part of the applied resin (outer peripheral part). The wafer surface was exposed. Thereafter, heat treatment was performed at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide resin film having a thickness of 10 μm.

In this manner, a cleaning member for a semiconductor device having the structure shown in FIG. 1 having a cleaning layer made of the above polyimide resin film on one side of a 12-inch silicon wafer and a portion where the outer peripheral portion of the wafer is exposed was produced.

Using this cleaning member for a semiconductor device, dust removal was evaluated as follows. First, a new bare wafer is transported through the semiconductor device, brought into contact with a wafer fixing table, and the number of particles transferred to the bare wafer is counted using a particle counter. The transferred particles are set as the initial number of particles.

Next, the cleaning member is transported in the same manner as described above, and is brought into contact with a wafer fixing table to collect particles. Next, a new bare wafer is conveyed, and the particles are counted in the same manner as when the initial number of particles is counted. This number of particles is taken as the number of particles after cleaning.

From the data of the number of particles adhering to the bare wafer thus measured, the residual particle ratio by the cleaning member is calculated. In this calculation method, the initial particle number was used as a denominator, the number of particles after cleaning was divided into numerators, and a value obtained by multiplying by 100 was evaluated as an index of a particle remaining rate by a cleaning member.

The normal semiconductor manufacturing process was advanced, and the monitoring process as described above was performed periodically. At this time, the cleaning member is used a plurality of times, and when the particle residual ratio exceeds 60% or when the particle residual ratio increases from the previous time, the cleaning member is regarded as being saturated, and the cleaning member is I decided to replace it.

According to the cleaning member for a semiconductor device manufactured by the above method, the residual rate of particles in a new state was 20% for particles of 0.2 μm or more. The particle residual ratio for the fourth time was 65%, and it was determined that the cleaning ability was saturated.

Next, the cleaning member saturated with the cleaning ability was put into a plasma etching apparatus, and the surface layer of the cleaning layer was dry-etched. At this time, Ar was used as the plasma gas, and an oscillator having a frequency of 40 kHz was used. The power during irradiation was 150 W and the irradiation time was 5 minutes.

With respect to the dry-etched cleaning member, the particle removal performance was examined in the same manner as in the case of a new product. In the first round, the residual particle ratio was 23%, and the particle removal performance was almost equivalent. In the multiple test, it was confirmed that the particle remaining rate was 65% at the fourth time, and that the particle removal performance was obtained up to the same number as the new product.

Using the cleaning member produced in the same manner as in Example 1, the semiconductor manufacturing apparatus was cleaned until the particle removal performance was saturated in the same manner as in Example 1.

A KrF excimer laser was used as a dry etching method for removing particles adhering to the surface of the cleaning member. The excimer laser was shaped into a rectangle with an energy per pulse of 400 mJ / pulse, a repetition frequency of 200 Hz, and a beam size of 300 mm × 1 mm. The scanning speed on the wafer was 30 mm / sec, and it took about 10 seconds to irradiate the entire cleaning layer on the wafer.

After the regeneration process as described above, the same particle removal performance evaluation as in Example 1 was performed. The first particle remaining rate after regeneration was 22%, and it was confirmed that almost the same performance as that of a new product was recovered. In the multiple test, it was confirmed that the particle residual rate for the fourth time was 62%, and that the particle removal performance was maintained up to the same number as the new product.

Comparative Example 1
Using the cleaning member produced in the same manner as in Example 1, the semiconductor manufacturing apparatus was cleaned until the particle removal performance was saturated in the same manner as in Example 1.

In order to remove particles adhering to the surface of the cleaning member, cleaning was performed using a wafer single wafer cleaning machine while rotating the brush with pure water. At that time, the rotation speed of the brush was 150 rpm. The brush cleaning time was 10 seconds.

After this brush cleaning, fine scratches were observed on the surface of the cleaning layer of the cleaning member, and it was confirmed that the transparency was lowered overall.

For the cleaning member after the brush cleaning, the same particle removal performance evaluation as in Example 1 was performed. The initial particle remaining rate was 120%, and the phenomenon of an increase in the number of particles, which seems to have been transferred from the cleaning member to the wafer fixing table, occurred. This is considered to be caused by mechanical damage to the cleaning layer on the surface of the cleaning member by brush cleaning, and the material of the cleaning layer becomes particles due to the impact, and conversely adheres. In other words, it was clarified that pure water brush cleaning caused reverse contamination and the cleaning function was completely lost.

Comparative Example 2
The cleaning member manufactured in the same manner as in Example 1 was subjected to the cleaning operation of the semiconductor manufacturing apparatus until the particle removal performance was saturated in the same manner as in Example 1.

In order to remove particles adhering to the surface of the cleaning member, a wafer single wafer washer was used to inject pure water with about 1 MHz ultrasonic waves (megasonic) onto the surface of the cleaning member. At that time, the output of the ultrasonic wave was 100 W. The pure water ultrasonic cleaning time was 30 seconds. Further, the cleaning member was rotated at a speed of 100 rpm so that the cleaning liquid spread throughout.

After this pure water ultrasonic cleaning, it was confirmed that the surface of the cleaning layer of the cleaning member had no fine scratches as seen in Comparative Example 1 and no surface layer damage.

The particle removal performance evaluation similar to Example 1 was performed about the cleaning member after this pure water ultrasonic cleaning. The initial particle residual rate was 80%, and it was found that the particle removal performance was not recovered but was deteriorated. That is, pure water ultrasonic cleaning cannot restore and regenerate the particle removal performance of the cleaning member.

From the above results, when the dry etching method is used as in Examples 1 and 2, it is possible to regenerate the cleaning member with the particle removal performance saturated, and the particle removal performance equivalent to that of a new cleaning member can be restored. Wow.

On the other hand, it was found that in the wet cleaning using pure water as in Comparative Examples 1 and 2, the particle removal performance is not revived, but worsened. In particular, in Comparative Example 1 subjected to brush cleaning, the damage to the surface of the cleaning layer was large, and on the contrary, the number of particles was transferred and increased, which proved inappropriate for the regeneration process.

An example of the cleaning member for semiconductor devices of this invention is shown, (A) is typical sectional drawing, (B) is a top view.

Explanation of symbols

1 Silicon wafer 2 Cleaning layer 12 Exposed portion of wafer surface

Claims (6)

A method for regenerating a cleaning member for a semiconductor device, wherein a cleaning layer made of a heat-resistant resin obtained by thermosetting polyamic acid is provided on at least one surface of a wafer, wherein the particles adhering to the surface layer of the cleaning layer are dry-etched. A method for regenerating a cleaning member for a semiconductor device, comprising: removing the cleaning member using the semiconductor device.
The method for regenerating a cleaning member for a semiconductor device according to claim 1, wherein a plasma etching apparatus is used as the dry etching method.
The method for regenerating a cleaning member for a semiconductor device according to claim 1, wherein a laser beam having a wavelength of light in an ultraviolet region having a wavelength of 600 nm or less is used as the dry etching method.
After a cleaning member having a cleaning layer made of a heat-resistant resin obtained by thermosetting polyamic acid on at least one surface of the wafer is transported into the semiconductor device, particles adhering to the device are removed by cleaning. A method for regenerating a cleaning member for a semiconductor device, wherein particles adhering to a surface layer of a cleaning layer of the cleaning member are removed using a dry etching method.
The method for regenerating a cleaning member for a semiconductor device according to claim 4, wherein a plasma etching apparatus is used as the dry etching method.
The method for regenerating a cleaning member for a semiconductor device according to claim 4, wherein a laser beam having a wavelength of light in an ultraviolet region having a wavelength of 600 nm or less is used as the dry etching method.

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