KR100392730B1 - Capillary cleaning apparatus and method - Google Patents
Capillary cleaning apparatus and method Download PDFInfo
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- KR100392730B1 KR100392730B1 KR1019950060517A KR19950060517A KR100392730B1 KR 100392730 B1 KR100392730 B1 KR 100392730B1 KR 1019950060517 A KR1019950060517 A KR 1019950060517A KR 19950060517 A KR19950060517 A KR 19950060517A KR 100392730 B1 KR100392730 B1 KR 100392730B1
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- 238000004140 cleaning Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000011109 contamination Methods 0.000 claims abstract description 9
- 210000002445 nipple Anatomy 0.000 claims abstract description 8
- 239000000945 filler Substances 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013441 quality evaluation Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7801—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
Description
본 발명은 반도체 제조장치중 골드와이어로 다이와 리드를 전기적으로 접속시키는 와이어본딩 장치에 있어서, 특히 골드와이어가 직접 통과하는 캐필러리에 이물질이 쌓여 오염 및 와이어 볼 막힘 현상이 발생되어 일어날 수 있는 패키지 불량을 막고자 하는 것으로, 캐필러리에 이물질에 의한 오염발생시 에어블로우 스테이션 장치를 구비하여 공기압으로 캐필러리 내부를 클리닝하고 와이어 볼에 의해 캐필러리의 내부가 막힐 경우 리드프레임에 캐필러리 자국내기 방법으로 캐필러리 내부의 막힘을 제거토록 하는 것을 특징으로 하는 캐필러리 클리닝 장치 및 방법에관한 것이다.The present invention relates to a wire bonding device for electrically connecting a die and a lead with a gold wire in a semiconductor manufacturing apparatus. In particular, a package defect that may occur due to foreign matter accumulated in a capillary through which the gold wire passes directly may cause contamination and wire ball clogging. If the capillary is contaminated by foreign matters, it is equipped with an air blow station device to clean the inside of the capillary with pneumatic pressure, and if the inside of the capillary is blocked by the wire ball, the capillary marks are applied to the lead frame. The present invention relates to a capillary cleaning device and method for removing clogging in the capillary.
일반적인 반도체 제조공정에 있어서, 와이어본딩 공정은 리드프레임을 지지하며 열을 가하는 히터블럭에 리드프레임이 정위치 하면 윈도우 클램프로 고정 후 캐필러리로 와이어 본딩을 실시하는 공정이다. 이때 사용되는 캐필러리를 정상적으로 사용할 경우 와이어 본딩 작업을 약 2천번 정도 사용하면 그 수명을 다한다.In a general semiconductor manufacturing process, the wire bonding process is a process of performing wire bonding with a capillary after fixing the window frame when the lead frame is positioned in a heater block that supports and heats the lead frame. In this case, if the capillary used normally is used, the wire bonding work is used for about 2,000 times and its life span is reached.
그러나 와이어 본딩 작업시 캐필러리 내경 보다 미세한 이물질이 캐필러리 내부에 쌓일 때에는 와이어 볼을 형성하는 골드와이어의 테일이 제대로 형성되지 않아 와이어 브레이크가 발생하거나, 테일이 짧은 경우 토치 스파크로 볼을 형성할 때 작게 형성되어 반도체의 품질이 저하되며, 또한 이물질 등이 많아지거나 입자가 크면 캐필러리의 내면이 많이 오염되거나 캐필러리 내면이 막혀서 와이어 본딩 작업을 계속할 수 없게되어 캐필러리의 수명이 단축된다.However, when a finer foreign matter than the capillary inner diameter accumulates inside the capillary during the wire bonding operation, the tail of the gold wire forming the wire ball is not properly formed so that the wire break occurs, or when the tail is short, the ball is formed by the torch spark. When the size of the semiconductor is reduced, the quality of the semiconductor is deteriorated. Also, if the foreign matters are large or the particles are large, the inner surface of the capillary is contaminated or the inner surface of the capillary is clogged so that the wire bonding operation cannot be continued, thereby shortening the life of the capillary .
이를 도면을 참조하여 설명하면, 캐필러리(2)의 내경(DT) 보다 이물질이 미세할 경우 제 1 도의 테일 길이(LT)가 제대로 형성되지 않아서 와이어 루프(3)의 오픈이 발생하거나, 테일이 짧은 경우 즉, 형성된 테일 길이(LT)가 설정된 테일 길이 보다 작을 경우 볼 사이즈의 직경은 제 2 도와 같이 토오치 블레이드(4)의 고전압에 의해 형성된 와이어 볼(5) 사이즈(DB)가 설정된 볼 사이즈 보다 작게 형성되어 반도체의 품질이 저하되며, 또한 제 3 도와 같이 와이어 클램프(1)가 오픈 되었을 때는 캐필러리(2)의 하강과 공기압 상승에 의해 블넥에 인장력(FT)이 발생하며, 제4 도와 같이 볼넥 인장력(FT)에 의한 와이어 볼의 파단 발생으로 와이어 볼(5-1)이 캐필러리(2)를 막아 결국 이물질(6)과 와이어 볼(5-1)에 의해 캐필러리(2)의 불량을 초래한다(제 5 도).If this is described with reference to the drawings, when the foreign matter is finer than the inner diameter (D T ) of the capillary 2, the tail length (L T ) of FIG. 1 is not properly formed, the opening of the wire loop (3) occurs or When the tail is short, that is, when the formed tail length L T is smaller than the set tail length, the diameter of the ball size is the size of the wire ball 5 formed by the high voltage of the torch blade 4 as in the second degree (D B). ) Is formed smaller than the set ball size, and the quality of the semiconductor is deteriorated. Also, when the wire clamp 1 is opened as shown in FIG. 3, the tensile force (F T ) on the neck is caused by the lowering of the capillary 2 and the increase in air pressure. And the wire ball 5-1 blocks the capillary 2 due to the breakage of the wire ball due to the ball neck tension force F T as in the fourth degree, and thus the foreign matter 6 and the wire ball 5-1. ) Causes a failure of the capillary 2 (FIG. 5).
따라서 상기와 같은 에러요인이 발생하면 캐필러리를 교체해야 하고, 결국 캐필러리의 수명이 짧아지기 때문에 고가의 캐필러리를 낭비할 뿐만 아니라, 캐필러리 교체에 따른 시간이 소요되어 생산성이 저하되는 문제를 초래한다. 특히 제 6 도에 도시한 바와 같이 캐필러리(2)가 오염된 상태에서 와이어 본딩 작업시 와이어루프(3)에 긁힘(6-1)이 발생되어 와이어의 본딩 풀 테스트(Bonding Pull Test : B.P.T) 품질평가에서 인장력의 저하로 고품질의 평가를 받지 못한다.Therefore, if the above-mentioned error factors occur, the capillary needs to be replaced. As a result, the life of the capillary is shortened, which not only wastes expensive capillaries, but also takes time due to the replacement of the capillaries. Causes problems. In particular, as shown in FIG. 6, a scratch 6-1 is generated in the wire loop 3 during the wire bonding operation in a state in which the capillary 2 is contaminated, thereby causing a bonding pull test of the wire (BPT). ) In the quality evaluation, it is impossible to receive high quality evaluation due to the decrease in tensile force.
본 발명은 상기와 같은 문제를 해결코자 하는 것으로, 캐필러리 내면의 상태를 클리닝하기 위해 에어 블로우 스테이션 장치를 이용하여 캐필러리 내면의 오염물질을 제거하고, 캐필러리 내면이 완전히 막혀서 잘 제거되지 않으면 특정 파라미터로 캐필러리를 작동시켜 리드프레임의 윗면에 스티칭 자국을 내어 캐필러리 내면의 이물질 입자가 캐필러리 선단에서 떨어지게 한 다음 공기압으로 이를 제거토록 함을 특징으로 한다.The present invention is to solve the above problems, in order to clean the state of the inner surface of the capillary by using an air blow station device to remove the contaminants on the inner surface of the capillary, the capillary inner surface is completely clogged to remove If not, the capillary can be operated with a specific parameter to stitch marks on the upper surface of the leadframe so that foreign matter particles on the inner surface of the capillary fall off the capillary tip and then be removed by air pressure.
즉, 에어클리닝을 위해 공기압을 주입했을 때 캐필러리 선단과 받침대가 밀착되도록 깔대기 형상 홀을 형성하고, 상기 깔대기 형상 홀을 통해 캐필러리에 공기압을 제공하는 에어호스 및 에어호스와 연결되는 니플을 구비한 캐필러리 받침대와; 상기 캐필러리 받침대가 일정한 거리만큼 유격을 가질 수 있도록 고정해주는보조 고정구와; 에어호스와 공기압을 제어하는 솔레노이드로써 에어블로우 스테이션 장지 및; 상기 캐필러리의 사용 횟수와 오염 여부를 판단하고, 이송수단 및 에어블로우 스테이션 장치를 제어하여 캐필러리의 오염 상태를 제거토록 제어하는 클리닝 제어수단으로 구성한 것이다.That is, when the air pressure is injected for air cleaning, a funnel-shaped hole is formed to closely contact the capillary tip and the pedestal, and the air hose and the nipple connected to the air hose provide air pressure to the capillary through the funnel-shaped hole. A capillary pedestal provided; An auxiliary fixture for fixing the capillary pedestal so as to have a clearance by a predetermined distance; An air blow station mounting as a solenoid controlling an air hose and air pressure; The cleaning control means for determining the number of times of use of the capillary and contamination, and controlling the transport means and the air blow station device to remove the contamination state of the capillary.
이하 도면을 참조로 상세히 설명하면 다음과 같다.Hereinafter, described in detail with reference to the drawings.
제 9 도는 본 발명의 전체 구성도로서, 에어클리닝을 위해 공기압을 주입했을 때 캐필러리(2)의 선단과 받침대가 밀착되도록 깔대기 형상 홀(9)을 형성하고, 상기 깔대기 형상 홀(9)을 통해 캐필러리(2)에 공기압을 제공하는 에어호스(12) 및 에어호스와 연결되는 니플(11)을 구비한 캐필러리 받침대(10)와; 상기 캐필러리 받침대(10)가 일정한 거리만큼 유격을 가질 수 있도록 고정해주는 보조 고정구(8)와; 에어호스(12)와 공기압을 제어하는 솔레노이드(S1) 및; 상기 캐필러리의 사용횟수와 오염 여부를 판단하고, 이송수단 및 에어블로우 스테이션 장치를 제어하여 캐필러리의 오염상태를 제거토록 제어하는 클리닝 제어수단(도시하지 않음)으로 구성한다.FIG. 9 is an overall configuration diagram of the present invention, in which a funnel-shaped hole 9 is formed such that the tip and the base of the capillary 2 come into close contact with each other when air pressure is injected for air cleaning, and the funnel-shaped hole 9 A capillary pedestal 10 having an air hose 12 for providing air pressure to the capillary 2 and a nipple 11 connected to the air hose; An auxiliary fixture 8 for fixing the capillary pedestal 10 to have a clearance by a predetermined distance; An air hose 12 and a solenoid S1 for controlling air pressure; And a cleaning control means (not shown) which determines the number of times of use of the capillary and whether it is contaminated, and controls to remove the contaminated state of the capillary by controlling the conveying means and the air blow station device.
본 발명은 상기와 같이 구성하는 에어블로우 스테이션 장치로 캐필러리를 제 11 도의 에어블로우(X0,Y0) 위치로(이때 에어블로우 위치는 티칭되어 있음)제어하고, 제 12 도의 캐필러리(2)처럼 하강하여 정상위치 감지레벨 SG레벨이면 캐필러리 받침대(10)에 안전하게 장착 및 밀착했음을 감지하며, 이때 초음파 촉매 PB와 캐필러리를 누르는 힘 FB로 제 9 도처럼 솔레노이드 S1 동작에 의해서 강력한 에어압력PAIR에 의해 캐필러리 내면의 오염물질을 제거한다.The present invention controls the capillary to the air blow (X0, Y0) position of FIG. 11 (where the air blow position is taught), and the capillary 2 of FIG. ) as falling in, and if the normal position detecting level S G level cache secure the capillary pedestal (10) detects that the mounting and in close contact, wherein the ultrasonic catalyst P B and a cache of claim 9 around the column solenoid S1 operates as force F B presses the capillary strong air pressure by by P AIR cache removes contaminants of capillary inner surface.
즉, 클리닝 제어수단의 제어동작에 따라 캐필러리 내면을 클리닝하게 되는데 만일 캐필러리 위치 제어시 제어오차에 따른 캐필러리가 제 12 도와 같이 보조 고정구(8)에 위치하면 정위치 감지 레벨 SG보다 차이가 많은 SE레벨을 본드헤드 위치제어신호로 감지하여 다시 에어블로우(X0,Y0)위치를 세팅하도록 되어 있다.That is, the capillary inner surface is cleaned according to the control operation of the cleaning control means. If the capillary according to the control error is located in the auxiliary fixture 8 as the twelfth degree when the capillary position is controlled, the exact position detection level S G The more differential S E level is detected by the bond head position control signal and the air blow (X0, Y0) position is set again.
특히 미세 오차를 보완하기 위해 제 9 도처럼 캐필러리 받침대(10)가 보조 고정구(8)와 2t 만큼 유격을 주어 캐필러리 받침대(10)가 접촉을 시작후 t만큼의 범위 내에서 오차가 발생했을 때는 캐필러리 받침대(10)를 오차거리 만큼 이동시켜 에어블로우 스테이션 장치의 깔대기 형상 홀(9)의 중심을 캐필러리 내부 홀과 적절히 맞출 수 있도록 하였다.In particular, in order to compensate for the fine error, as shown in FIG. 9, the capillary pedestal 10 has a clearance of 2t with the auxiliary fixture 8, so that the capillary pedestal 10 has an error within the range of t after starting the contact. When it occurred, the capillary pedestal 10 was moved by an error distance so that the center of the funnel-shaped hole 9 of the air blow station device was properly aligned with the capillary inner hole.
여기서 캐필러리 받침대(10)의 캐필러리 받침 부분을 캐필러리의 각도(chamfer)와 같도록 일정한 각(θ)을 주었으며 재질 또한 캐필러리보다 연한 재질의 플라스틱계의 재질로 하였다.Here, the capillary support portion of the capillary pedestal 10 was given a constant angle θ to be equal to the chamfer of the capillary, and the material was also made of a plastic material of softer material than the capillary.
본 발명은 캐필러리가 완전히 막혔을 때는 제7,8도에 나타낸 것처럼 캐필러리(2)를 연한 재질의 리드면(7)의 특정위치에 파라미터 본드파워 PB, 본드포스 FB, 본드타임 TB로 자국을 내어 캐필러리 내면의 입자(5-1) 캐필러리 선단 내면에서 위쪽으로 이동시켜 에어블로우 과정을 거쳐 제 9 도의 5-1처럼 이물질 입자를 제거토록 하였다.When the capillary is completely blocked, the parameter bond power P B , the bond force F B , and the bond time T are located at a specific position of the lead surface 7 of the soft material of the capillary 2, as shown in FIGS. 7 and 8. A mark was made by B and moved upward from the inner surface of the capillary distal end of the particle 5-1 of the capillary to remove foreign matter particles as shown in 5-1 of FIG. 9 through an air blow process.
그리고 캐필러리 내면의 상태를 오염 이물질이 없도록 하기 위해 와이어 본더에 주기적인 캐필러리 클리닝 설정 데이터를 주어 캐필러리 클리닝을 할 수 있도록 하였으며, 에어블로우 장치가 없는 기존 와이어 본더 머신에는 상기 캐필러리 받침대(8)와 같은 역할을 하는 캐필러리 받침대(8-1)의 측면 일단에 에어호스(12-1)와 에어호스(12-1)를 연결해주는 니플(11-1)을 구비하고 타단에는 손으로 캐필러리 받침대(8-1)를 잡을 수 있는 손잡이(13)를 형성하여 구성한 손잡이(13)가 있는 간이형 에어블로우 장치(제 10 도)를 사용함으로써 캐필러리 위치를 제어하지 않고 캐필러리 받침대(8-1)를 캐필러리(2)에 대고 에어블로잉을 할 수 있도록 하였다.In order to prevent contamination of the inner surface of the capillary, the capillary cleaning setting data is periodically given to the wire bonder so that the capillary cleaning can be performed. In the existing wire bonder machine without the air blower, the capillary A nipple 11-1 connecting the air hose 12-1 and the air hose 12-1 to one end of the side of the capillary pedestal 8-1, which serves as the support pedestal 8; On the other end, the capillary position is controlled by using a simple air blow device (Fig. 10) having a handle 13 formed by forming a handle 13 for holding the capillary stand 8-1 by hand. Instead, the capillary pedestal 8-1 was allowed to be blown against the capillary 2.
에어블로잉 하기 위해서 제 11 도의 본드헤드의 캐필러리 위치 T(X,Y)에서 에어블로우(X0,Y0) 위치로 위치 제어하여 캐필러리를 하강시켰으나 제 12 도의 캐필러리(2-1) 위치 에어블로우(X0',Y0') 즉, 에어블로우(X0-X0', Y0-Y0')의 위치 오차가 발생하였을 때 화상인식 얼라이먼트 보정방법을 이용하여 캐필러리 제어위치 오차값 ｜에어블로우(X0-X0', Y0-Y0')｜을 극소화하였다.For air blowing, the capillary was lowered by controlling the position from the capillary position T (X, Y) of the bond head of FIG. 11 to the air blow (X0, Y0) position, but the capillary 2-1 of FIG. When the position error of the position air blow (X0 ', Y0'), that is, the air blow (X0-X0 ', Y0-Y0') occurs, the capillary control position error value using the image recognition correction method | (X0-X0 ', Y0-Y0') | minimized.
그리고 본 발명에서 제 11 도 캐필러리 위치중심 T(X,Y) 좌표에서 에어블로우 스테이션 위치 에어블로루(X0,Y0)에 캐필러리가 하강하여 제 12 도의 캐필러리(2-1)처럼 오차를 발생하지 않도록 제어하기 위해 카메라 좌표C(X1,Y1)로 인식시키는 화상인식 얼라이먼트 방법과 캐필러리 T(X,Y)를 조그로 수동 이동시켜 확대경으로 캐필러리를 보면서 제 12 도처럼 캐필러리(2)를 하강시켜, 이때 캐필러리의 하강높이 SG레벨값과 에어블로우(X0,Y0) 좌표값을 인식시키는 방법을 사용했으며, 카메라 좌표를 인식시키는 방법에 대해서 구체적으로 설명하면 카메라 좌표C(X1,Y1) 위치를 화상 모니터를 보면서 카메라 커서로 중심이 제 9' 도처럼 캐필러리 받침대의 이미지 중심에 오도록 조그(서브 모터를 수동으로 움직임)로 좌표를 인식하면 이때 머신의 중앙처리장치에서 T(X,Y)에서 에어블로우(X0, Y0)의 거리 L =In the present invention, the capillary descends to the air blow station position air blower (X0, Y0) at the eleventh degree capillary position center T (X, Y) coordinates, as in the capillary 2-1 of FIG. In order to control the error not to occur, the image recognition alignment method that recognizes the camera coordinates C (X1, Y1) and the capillary T (X, Y) are manually moved by jog to see the capillary with a magnifying glass as shown in FIG. The capillary 2 is lowered, and at this time, the method of recognizing the falling height S G level value and the air blow (X0, Y0) coordinate value of the capillary is used. Looking at the camera coordinates C (X1, Y1) position while viewing the image monitor, the camera cursor recognizes the coordinates as a jog (manual movement of the sub-motor) so that the center of gravity is at the center of the image of the capillary cradle as shown in Figure 9 T (X, Y) ) Distance L = air blow (X0, Y0)
이고, 여기서 (X-X1) = △Tx, (Y-Y1) = △Ty는 카메라 중심 C(X1,Y1)와 캐필러리의 중심 T(X,Y)와의 떨어진 캐필러리 오프셋이다.Where (X-X1) = ΔTx, (Y-Y1) = ΔTy is the capillary offset away from the camera center C (X1, Y1) and the center of the capillary T (X, Y).
실제로 캐필러리 에어클리닝을 하기 위해 캐필러리 에어 블로우(X0,Y0)로 위치제어 하였는데 제 12 도의 캐필러리(2-1)처럼 오차가 발생하면 앞에서 설명한 화상인식 얼라이먼트 방법으로 자동 계산하여 캐필러리(2-1)와 캐필러리(2)의 위치제어 오차값을 보정하여 정확한 캐필러리 제어가 되도록 하였다.In order to actually perform capillary air cleaning, capillary air blow (X0, Y0) was used for position control. If an error occurs like capillary (2-1) in FIG. 12, the capillary air cleaning is automatically calculated using the image recognition alignment method described above. The position control error values of the filler 2-1 and the capillary 2 were corrected to obtain accurate capillary control.
이를 동작순서로 나타내면 제 13 도와 같이 도시할 수 있는바, 시스템 작동후 캐필러리 오염신호가 들어오면 캐필러리의 사용횟수를 체크하여 수명이 아직 남아 있는가를 판별하는 제 1 단계(S1)와; 캐필러리 수명이 다하였으면 캐필러리를 교환하고 수명이 아직 남아 있다고 판단되면 캐필러리를 에어블로우 스테이션으로 이송하는 제 2 단계(S2)와; 에어블로우 스테이션으로 이송후 캐필러리를 하강하여 에어블로우 위치에 정확히 도달했는지의 여부를 판단하여 정확히 도달하지 않았을 경우 캐필러리를 상하좌우 방향으로 움직여 에어블로우 위치로 재세팅하는 제 3 단계(S3)와; 솔레노이드를 동작시켜 캐필러리에 공기압을 제공한 후 캐필러리를 정위치에 복귀시키는 제 4 단계(S4)와; 와이어 삽입동작을 취하여 와이어가 삽입되지 않으면 캐필러리가 막힌 것으로 판단하여 캐필러리 스티칭 위치로 이송후 캐필러리를 클리닝하기 위한 파라미터를 선택하여 스티칭하고 제 3 단계(S3)를 반복하는 제 5 단계(S5)와; 와이어를 삽입후 와이어 볼을 형성하여 와이어본딩 작업을 실시하는 제 6 단계(S6)로 이루어져 순차 동작한다.This can be shown as the thirteenth diagram in the order of operation, the first step (S1) of determining whether the service life is still remaining by checking the number of times the capillary used when the capillary contamination signal after the system operation; A second step (S2) of exchanging the capillary if the capillary life is over and transferring the capillary to the air blow station if it is determined that the life remains; After transferring to the air blow station, the capillary is lowered to determine whether the air blow position is reached correctly. If not, the third step of resetting the capillary to the air blow position by moving the capillary in the up, down, left and right directions (S3). )Wow; A fourth step S4 of operating the solenoid to provide air pressure to the capillary and then returning the capillary to the home position; The fifth step of taking the wire inserting operation and determining that the capillary is blocked if the wire is not inserted, transfers to the capillary stitching position, selects and stitches the parameter for cleaning the capillary, and repeats the third step S3. (S5); After inserting the wire is made of a sixth step (S6) to perform a wire bonding operation to form a wire ball to operate sequentially.
상술한 바와 같이 본 발명은 캐필러리에 이물질에 의한 오염 발생시 에어블로우 스테이션 장치를 구비하여 공기압으로 캐필러리 내부를 클리닝하고 와이어 볼에 의해 캐필러리의 내부가 막힐 경우 리드프레임에 캐필러리 자국내기 방법으로 캐필러리 내부의 막힘을 제거할 수 있다.As described above, the present invention includes an air blow station device to clean the inside of the capillary by air pressure when the capillary is contaminated by foreign matters, and the capillary marks on the lead frame when the inside of the capillary is blocked by the wire ball. This can eliminate clogging inside the capillary.
제 1 도는 와이어 테일 형성시 캐필러리의 동작상태를 나타낸 단면도,1 is a cross-sectional view showing the operating state of the capillary when forming the wire tail,
제 2 도는 토치 전극과 스파크로 볼이 형성됨을 보인 캐필러리 동작 상태도,2 is a capillary operation state showing that the ball is formed by the torch electrode and the spark,
제 3 도는 와이어 클램프가 오픈됐을 때 캐필러리 하강과 에어 압력에 의한 볼넥에 인장력이 발생하는 것을 나타낸 캐필러리 동작 상태도,3 is a capillary operation state showing that the tensile force is generated in the ball neck by the capillary lowering and air pressure when the wire clamp is opened,
제 4 도는 인장력에 의한 와이어 볼넥 파단의 발생으로 캐필러리가 막히는 것을 나타낸 캐필러리 동작상태도,4 is a capillary operating state showing that the capillary is clogged by the occurrence of wire ball neck break due to the tensile force,
제 5 도는 볼에 의한 캐필러리 막힘과 캐필러리 내부의 이물질을 도시한 캐필러리 상태도,5 is a capillary state diagram showing the capillary clogging caused by the ball and foreign matter inside the capillary,
제 6 도는 캐필러리 내경면의 이물질에 의해 발생한 와이어 긁힘 예시도,6 is an illustration of scratches on the wire caused by foreign matter on the capillary inner diameter surface,
제 7 도는 캐필러리 선단의 이물질 및 와이어 볼을 제거하기 위해 본드포스와 본드파워 및 본드타임을 주었을 때 리드윗면과 캐필러리와의 관계도,7 is a diagram showing the relationship between the top of the capillary and the capillary when bond force, bond power, and bond time are given to remove foreign matter and wire balls from the capillary tip,
제 8 도는 이물질 및 와이어 볼 제거자국을 낸 후 캐필러리 상승과 와이어 볼이 캐필러리 내부에서 이동한 것을 나타낸 개략도,8 is a schematic diagram showing the capillary rise and the wire ball moved inside the capillary after removing the foreign matter and the wire ball removing marks,
제 9 도는 본 발명의 캐필러리 클리닝 장치를 개략적으로 도시한 단면도,9 is a cross-sectional view schematically showing a capillary cleaning device of the present invention,
제 10 도는 캐필러리 클리닝을 위한 간이용 에어 블로우 장치를 나타낸 단면도,10 is a cross-sectional view showing a simplified air blow device for capillary cleaning,
제 11 도는 본 발명의 와이어 본더의 위치제어를 설명하기 위한 개략도,11 is a schematic view for explaining the position control of the wire bonder of the present invention,
제 12 도는 본 발명의 에어 블로우 스테이션 장치를 나타낸 개략도,12 is a schematic view showing an air blow station apparatus of the present invention,
제 13 도는 본 발명의 제어부의 동작상태도이다.13 is an operation state diagram of the control unit of the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 와이어 클램프 2 : 캐필러리1: wire clamp 2: capillary
3 : 와이어루프 4 : 토오치 블레이드3: wire loop 4: torch blade
5 : 와이어 볼 6 : 이물질5: wire ball 6: foreign matter
7 : 리드면 8 : 보조 고정구7: lead surface 8: auxiliary fixture
9 : 깔대기 형상 홀 10 : 캐필러리 받침대9: funnel shape hole 10: capillary base
11 : 니플 12 : 에어호스11: nipple 12: air hose
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950060517A KR100392730B1 (en) | 1995-12-28 | 1995-12-28 | Capillary cleaning apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950060517A KR100392730B1 (en) | 1995-12-28 | 1995-12-28 | Capillary cleaning apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970053182A KR970053182A (en) | 1997-07-29 |
| KR100392730B1 true KR100392730B1 (en) | 2003-10-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950060517A KR100392730B1 (en) | 1995-12-28 | 1995-12-28 | Capillary cleaning apparatus and method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100392730B1 (en) |
Cited By (7)
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|---|---|---|---|---|
| KR100930290B1 (en) * | 2008-01-25 | 2009-12-09 | 고려대학교 산학협력단 | Capillary Clogging Improvement Device for Wire Bonder |
| KR20150143053A (en) | 2014-06-13 | 2015-12-23 | 에스티에스반도체통신 주식회사 | Air blow apparatus for wire bonding |
| US9825000B1 (en) * | 2017-04-24 | 2017-11-21 | International Test Solutions, Inc. | Semiconductor wire bonding machine cleaning device and method |
| US9833818B2 (en) | 2004-09-28 | 2017-12-05 | International Test Solutions, Inc. | Working surface cleaning system and method |
| US10195648B2 (en) | 2009-12-03 | 2019-02-05 | International Test Solutions, Inc. | Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware |
| WO2021097121A1 (en) * | 2019-11-14 | 2021-05-20 | International Test Solutions, Inc. | System and method for cleaning contact elements and support hardware or wire bonder using functionalized surface microfeatures |
| US11035898B1 (en) | 2020-05-11 | 2021-06-15 | International Test Solutions, Inc. | Device and method for thermal stabilization of probe elements using a heat conducting wafer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100681399B1 (en) * | 2001-01-04 | 2007-02-15 | 삼성전자주식회사 | Apparatus For Cleaning Lead Bonding Tool Used For Manufacture Of Semiconductor Package |
-
1995
- 1995-12-28 KR KR1019950060517A patent/KR100392730B1/en not_active IP Right Cessation
Cited By (11)
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|---|---|---|---|---|
| US9833818B2 (en) | 2004-09-28 | 2017-12-05 | International Test Solutions, Inc. | Working surface cleaning system and method |
| US10239099B2 (en) | 2004-09-28 | 2019-03-26 | International Test Solutions, Inc. | Working surface cleaning system and method |
| KR100930290B1 (en) * | 2008-01-25 | 2009-12-09 | 고려대학교 산학협력단 | Capillary Clogging Improvement Device for Wire Bonder |
| US10195648B2 (en) | 2009-12-03 | 2019-02-05 | International Test Solutions, Inc. | Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware |
| KR20150143053A (en) | 2014-06-13 | 2015-12-23 | 에스티에스반도체통신 주식회사 | Air blow apparatus for wire bonding |
| US9825000B1 (en) * | 2017-04-24 | 2017-11-21 | International Test Solutions, Inc. | Semiconductor wire bonding machine cleaning device and method |
| US10361169B2 (en) | 2017-04-24 | 2019-07-23 | International Test Solutions, Inc. | Semiconductor wire bonding machine cleaning device and method |
| WO2021097121A1 (en) * | 2019-11-14 | 2021-05-20 | International Test Solutions, Inc. | System and method for cleaning contact elements and support hardware or wire bonder using functionalized surface microfeatures |
| US11318550B2 (en) | 2019-11-14 | 2022-05-03 | International Test Solutions, Llc | System and method for cleaning wire bonding machines using functionalized surface microfeatures |
| TWI804773B (en) * | 2019-11-14 | 2023-06-11 | 美商英特格股份有限公司 | System and method for cleaning contact elements and support hardware or wire bonder using functionalized surface microfeatures |
| US11035898B1 (en) | 2020-05-11 | 2021-06-15 | International Test Solutions, Inc. | Device and method for thermal stabilization of probe elements using a heat conducting wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970053182A (en) | 1997-07-29 |
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