JP5009065B2 - Cleaning member, conveying member with cleaning function, and cleaning method for substrate processing apparatus - Google Patents

Description

  The present invention relates to a cleaning member for removing fine foreign matters, a transport member with a cleaning function, and a cleaning method for a substrate processing apparatus using the transport member with a cleaning function. More specifically, for example, a cleaning member for removing a foreign substance from a substrate or apparatus that dislikes a fine foreign substance, such as a semiconductor, a flat panel display, a printed board, a substrate processing apparatus, and a conveying member with a cleaning function having the cleaning member And a cleaning method of a substrate processing apparatus using the transport member with a cleaning function.

  In various types of substrate processing apparatuses that dislike foreign matters, such as manufacturing apparatuses and inspection apparatuses for semiconductors, flat panel displays, printed boards, and the like, each of the transfer systems and the substrate are transferred while being physically contacted. At this time, if foreign matter adheres to the substrate or the transport system, subsequent substrates are contaminated one after another, so that it is necessary to periodically stop and clean the apparatus. As a result, there is a problem that the operating rate of the substrate processing apparatus is lowered and a problem that a great deal of labor is required for the cleaning process of the substrate processing apparatus.

  In order to overcome such a problem, a method (see Patent Document 1) for removing foreign substances adhering to the back surface of the substrate by conveying a plate-like member has been proposed. According to such a method, since it is not necessary to stop the substrate processing apparatus and perform the cleaning process, the problem that the operation rate of the substrate processing apparatus is reduced is solved. However, this method cannot sufficiently remove fine foreign matters.

  On the other hand, there has been proposed a method (see Patent Document 2) for cleaning and removing foreign substances adhering to the processing apparatus by transporting the substrate to which the adhesive substance is fixed as a cleaning member into the substrate processing apparatus. In addition to the advantages of the method described in Patent Document 1, this method is also excellent in removing foreign matters. Therefore, a great amount of labor is required for the problem that the operation rate of the substrate processing apparatus is reduced and the cleaning processing of the substrate processing apparatus. Any problems that are necessary are solved.

  As described above, the method of cleaning and removing foreign matter with a cleaning member having a sticky substance is excellent as a method for effectively removing foreign matter, but the sticky substance is too strongly adhered to the cleaning site and peeled off. There is a possibility that a problem that the adhesive is not present or a problem that the adhesive remains in the cleaning site and is contaminated. Moreover, when adhesive force is reduced in order to prevent adhesive residue, there exists a problem that it is inferior to the dust removal property of an important foreign material.

  Moreover, as a method for removing foreign matter, the method of wiping the waste cloth with alcohol (alcohol wiping) has a problem in that it is inferior in dust removal properties, such as leaving foreign matter and unevenness in removing foreign matter.

  Recently, the size of the foreign matter, which is a problem in substrates and devices that dislike fine foreign matters, has become a submicron (1 μm or less) level. With the above method, it is difficult to reliably remove these submicron-size foreign matters.

In order to remove foreign matters having a particle size of about several tens of microns, a cleaning wafer has been proposed in which a dot pattern of about several tens of microns square is formed on the surface by photoresist or cutting and polishing (see Patent Document 3). However, in this cleaning wafer, the foreign matter is removed by holding the foreign matter in the space portion of the dot pattern. Therefore, the foreign matter having a particle size of about several tens of microns can be removed. It is difficult to sufficiently remove such foreign matters.
JP-A-11-87458 JP-A-10-154686 JP 2004-63669 A

  An object of the present invention is to provide a cleaning member that can easily, reliably, and sufficiently remove fine foreign matters, preferably sub-micron level foreign matters, without causing contamination at a cleaning site. It is another object of the present invention to provide a transport member with a cleaning function having the cleaning member, and a cleaning method for a substrate processing apparatus using the transport member with a cleaning function.

  As a result of intensive studies to solve the above problems, the present inventors have provided a plurality of columnar structure protrusions having an aspect ratio of a specific size on the surface of the cleaning layer provided in the cleaning member. The present inventors have found that the above problems can be solved and have completed the present invention.

  The cleaning member of the present invention is a cleaning member having a cleaning layer provided with a plurality of projections having a columnar structure on the surface, and the aspect ratio of the projections of the columnar structure is 5 or more.

  In preferable embodiment, the length of the protrusion part of the convex part of the said columnar structure is 100 nm or more.

In a preferred embodiment, the density of the convex portions of the columnar structure on the surface of the cleaning layer is 1.0 × 10 ⁸ pieces / cm ² or more.

  In a preferred embodiment, the cleaning layer has a specific surface area of 2.0 or more.

  In a preferred embodiment, the cleaning member is used for removing foreign substances on the substrate.

  In a preferred embodiment, the cleaning member is used for removing foreign substances in the substrate processing apparatus.

  According to another aspect of the present invention, a conveyance member with a cleaning function is provided. The transport member with a cleaning function includes a transport member and the cleaning member provided on at least one surface of the transport member.

  According to another aspect of the present invention, a cleaning method for a substrate processing apparatus is provided. The substrate processing apparatus cleaning method includes transporting the transport member with a cleaning function into the substrate processing apparatus.

  According to the present invention, it is possible to provide a cleaning member that can easily, reliably, and sufficiently remove fine foreign matters, preferably sub-micron level foreign matters, without causing contamination at the cleaning site. Furthermore, it becomes possible to provide a transport member with a cleaning function having the cleaning member, and a method for cleaning a substrate processing apparatus using the transport member with a cleaning function.

  The effects as described above can be exhibited by providing a plurality of columnar structure convex portions having an aspect ratio of a specific size on the surface of the cleaning layer provided in the cleaning member. Such an effect is considered to be manifested by the van der Waals force exerted between the cleaning layer provided on the cleaning member and the cleaning site.

A. Cleaning Member FIG. 1 is a schematic sectional view of a cleaning member according to a preferred embodiment of the present invention. The cleaning member 100 includes a support 10 and a cleaning layer 20. The support 10 may be omitted depending on the purpose. That is, the cleaning member may be composed of the cleaning layer alone. The cleaning layer 20 includes a plurality of columnar convex portions 30 on its surface. In the cleaning member of the present invention, when the cleaning layer 20 is provided on the support 10, the surface on which the cleaning layer 20 is provided may be provided on at least one side of the support 10. That is, it may be provided only on one side or on both sides. Further, it may be provided on the entire surface, or may be provided only on a part of the end surface (edge portion).

  The convex part 30 has a columnar structure. The columnar structure referred to in the present invention includes not only a columnar structure but also a substantially columnar structure. For example, a columnar structure, a polygonal columnar structure, a cone-shaped structure, a fibrous structure, and the like are preferable. Moreover, the cross-sectional shape of the columnar structure may be uniform over the entire convex portion or may be non-uniform. Furthermore, the protrusion of the convex portion may be directed along a substantially straight line or may be directed along a curved line.

  Any appropriate angle can be adopted as the angle formed between the protruding direction of the protrusions of the columnar structure and the surface of the cleaning layer as long as the object of the present invention can be achieved. For example, the protrusions of the columnar structure may protrude substantially vertically from the surface of the cleaning layer, or the protrusions of the columnar structure may protrude from the surface of the cleaning layer.

  In the present invention, the aspect ratio of the convex portion of the columnar structure is 5 or more. In the present invention, the “aspect ratio” refers to the ratio of the length (A) of the diameter of the convex portion of the columnar structure to the length (B) of the protruding portion of the convex portion (provided that (A) and (B) is the same unit). In the case where the convex portion of the columnar structure is distorted, the length of the protruding portion of the protruding portion from the surface of the cleaning layer to the portion furthest away in the vertical direction is the length of the protruding portion of the protruding portion. The aspect ratio of the protrusions of the columnar structure is preferably 6 or more, more preferably 8 or more, and still more preferably 10 or more. The upper limit of the aspect ratio of the protrusions of the columnar structure is preferably 1000 or less, more preferably 100 or less, and even more preferably 50 or less. When the aspect ratio of the convex portion of the columnar structure is in the above range, fine foreign matters, preferably, submicron level foreign matters can be easily, reliably and sufficiently removed. Such an effect is considered to be because van der Waals force acts between the cleaning layer provided in the cleaning member and the cleaning portion when the aspect ratio of the convex portion of the columnar structure is in the above range.

  The length of the protruding portion of the protrusions of the columnar structure is preferably 100 nm or more, more preferably 200 nm or more, and further preferably 300 nm or more. The upper limit of the length of the protruding portion of the convex portion of the columnar structure is preferably 100000 nm or less, more preferably 10,000 nm or less, and even more preferably 5000 nm or less. When the length of the protruding portion of the convex portion of the columnar structure is in the above range, fine foreign matters, preferably, submicron level foreign matters can be easily, reliably and sufficiently removed. Such an effect is considered to be because van der Waals force acts between the cleaning layer provided on the cleaning member and the cleaning portion when the length of the protruding portion of the convex portion of the columnar structure is in the above range. It is done.

  What is necessary is just to measure the length of the protrusion part of the convex part of a columnar structure by arbitrary appropriate measuring methods. From the viewpoint of ease of measurement, preferably, measurement using a scanning electron microscope (SEM) is mentioned. The measurement using a scanning electron microscope (SEM) is performed, for example, by attaching a cleaning layer having a plurality of columnar protrusions on the surface of an SEM observation sample stage, and observing from the side surface direction. It is possible to determine the length of the protruding portion.

In the present invention, the density of the convex portions of the columnar structure on the surface of the cleaning layer is preferably 1.0 × 10 ⁸ pieces / cm ² or more, more preferably 2.0 × 10 ⁸ pieces / cm ² or more. Yes, more preferably 3.0 × 10 ⁸ pieces / cm ² or more. The upper limit of the density of the convex portions of the columnar structure on the surface of the cleaning layer is preferably 1.0 × 10 ¹² pieces / cm ² or less, more preferably 1.0 × 10 ¹¹ pieces / cm ² or less, Preferably, it is 3.0 × 10 ¹⁰ pieces / cm ² or less. When the density of the convex portions of the columnar structure on the surface of the cleaning layer is in the above range, fine foreign matters, preferably, submicron level foreign matters can be easily, reliably and sufficiently removed. Such an effect is because van der Waals force acts between the cleaning layer provided on the cleaning member and the cleaning portion when the density of the convex portions of the columnar structure on the surface of the cleaning layer is in the above range. Conceivable.

  In the present invention, the specific surface area of the cleaning layer is preferably 2.0 or more, more preferably 2.2 or more, and further preferably 2.5 or more. The upper limit of the specific surface area of the cleaning layer is preferably 50 or less, more preferably 30 or less, and even more preferably 10 or less. When the specific surface area of the cleaning layer is within the above range, the cleaning layer effectively follows the fine foreign matter present at the site to be cleaned and the unevenness of the site to be cleaned, and the fine foreign matter, preferably at the submicron level. Foreign matter can be removed easily, reliably and sufficiently. Such an effect is considered to be because van der Waals force acts between the cleaning layer provided in the cleaning member and the cleaning portion when the specific surface area of the cleaning layer is in the above range.

  In the present invention, the “specific surface area of the cleaning layer” is a value obtained by dividing the actual surface area of the cleaning layer by the apparent surface area. The actual surface area means an actual surface area based on an increase in the surface area caused by the microstructure formed on the surface of the cleaning layer. The apparent surface area means a surface area obtained from a normal area calculation formula assuming that the surface of the cleaning layer is smooth.

  The actual surface area cannot be obtained by a calculation formula for obtaining a normal area. Therefore, the “BET method” obtained by the amount of adsorption of the inert gas on the surface was used for the actual measurement of the surface area.

  In the BET method, a sample is first placed in a sample tube (adsorption cell), evacuated while being heated, and the weight of the sample after degassing is measured. Thereafter, the adsorption cell is attached to the apparatus again, and gas is fed into the cell. When nitrogen gas is adsorbed on the sample surface and the amount of gas blown is increased, the sample surface is covered with gas molecules. Then, the state in which the gas molecules are adsorbed in a multiple manner is plotted as a change in the adsorption amount with respect to a change in pressure. From this graph, the amount of gas molecules adsorbed only on the sample surface is obtained from the BET adsorption isotherm represented by the equation (1).

P / V (P ₀ −P) = 1 / V _m C + {(C−1) / V _m C} × (P / P ₀ ) (1)
However, each symbol in Formula (1) is as follows.
P: pressure of adsorbate gas in adsorption equilibrium P ₀ : saturated vapor pressure of adsorbate at adsorption temperature V: adsorption amount V _{m at} adsorption equilibrium pressure P: monomolecular layer adsorption amount C: solid surface and adsorbate Constant relating to the magnitude of interaction, BET constant (C = exp {(E ₁ −E ₂ ) / RT}
E ₁ : heat of adsorption of the first layer (kJ / mol)
E ₂ : heat of liquefaction at the measurement temperature of adsorbate (kJ / mol)

  In the present invention, a flow-type specific surface area automatic measuring device (manufactured by Shimadzu Corporation, Flowsorb III2300) is used to measure the actual surface area, and the actual surface area of the sample having a cleaning layer having a fine structure on the surface is measured using krypton gas. It was measured by the BET method used.

  In the present invention, any appropriate method can be adopted as a method for producing a convex portion having a columnar structure on the surface of the cleaning layer as long as the object of the present invention can be achieved. For example, plasma etching treatment, sputtering treatment, laser treatment, photolithography treatment, nanoimprint (stamping) treatment and the like can be mentioned. From the viewpoint of ease of production, etc., plasma etching is preferable.

  In the case of forming columnar structure protrusions on the surface of the cleaning layer by plasma etching, any appropriate gas may be employed as the gas species to be used as long as the object of the present invention can be achieved. Examples thereof include oxygen gas, hydrogen gas, water vapor gas, nitrogen gas, argon gas, and a mixed gas of oxygen and water vapor. In particular, the case where oxygen gas is used is preferable.

  As the gas flow rate in the plasma etching process, any appropriate gas flow rate can be adopted as long as the object of the present invention can be achieved. For example, it is preferably 0.1 sccm or more, more preferably 1 sccm or more.

  As the vacuum gas pressure in the plasma etching process, any appropriate vacuum gas pressure can be adopted as long as the object of the present invention can be achieved. For example, it is preferably 100 Pa or less, more preferably 50 Pa or less.

As the surface treatment conditions in the plasma etching treatment, any appropriate conditions can be adopted as long as the object of the present invention can be achieved. For example, the discharge power energy represented by the product of the discharge power density and the processing time is preferably 100 W · sec / cm ² or more, and more preferably 250 W · sec / cm ² or more. The distance between the electrodes is preferably 0.1 mm or more and 1 m or less. The power source is preferably RF. The discharge power density is preferably 0.01 W / cm ² or more, more preferably 0.1 W / cm ² or more. The treatment time is preferably 60 seconds or longer, more preferably 300 seconds or longer.

  The tensile elastic modulus of the cleaning layer is preferably 0.5 MPa or more, more preferably 1 to 10,000 MPa, and further preferably 10 to 10,000 MPa in the operating temperature range of the cleaning member. When the tensile modulus is in such a range, a cleaning member having an excellent balance between foreign matter removal performance and conveyance performance can be obtained. The tensile elastic modulus is measured according to JIS K7127. By setting the elastic modulus of the cleaning layer within the above range, fine foreign matters, preferably, submicron level foreign matters can be easily, reliably and sufficiently removed.

  The cleaning layer has, for example, a 180-degree peeling adhesive force with respect to the mirror surface of the silicon wafer, preferably 0.2 N / 10 mm width or less, and more preferably 0.01-0.10 N / 10 mm width. Within such a range, the cleaning layer has good foreign matter removal performance and transport performance. 180 degree peeling adhesive strength is measured according to JIS Z0237.

  Arbitrary appropriate conditions can be employ | adopted for the thickness of the said cleaning layer in the range which can achieve the objective of this invention. Preferably it is 1-200 micrometers, More preferably, it is 5-100 micrometers, More preferably, it is 5-50 micrometers, Most preferably, it is 5-20 micrometers. Within such a range, fine foreign matters, preferably, submicron level foreign matters can be easily, reliably and sufficiently removed.

  The cleaning layer preferably has substantially no adhesive force. Here, having substantially no tackiness means that there is no pressure-sensitive tack that represents the function of tackiness when the essence of tackiness is friction that is resistance to slippage. This pressure-sensitive tack is expressed in the range where the elastic modulus of the adhesive substance is up to 1 MPa, for example, according to the Dahlquist standard.

  Any appropriate material can be adopted as the material constituting the cleaning layer as long as the object of the present invention can be achieved. Specific examples of the material constituting the cleaning layer include, for example, polyimide resins, polyester resins, fluorine resins, acrylic resins, epoxy resins, polyolefin resins, polyvinyl chloride, EVA, PEEK, PMMA, POM, and the like. And high molecular resin. In particular, polyimide resins and polyester resins have heat resistance and are preferably used.

  The material constituting the cleaning layer may further contain any appropriate additive as long as the object of the present invention can be achieved. Specific examples of the additive include a surfactant, a plasticizer, an antioxidant, a conductivity imparting material, an ultraviolet absorber, and a light stabilizer. By adjusting the kind and / or amount of the additive used, a cleaning layer having desired characteristics according to the purpose can be obtained.

  The cleaning layer may be formed by any appropriate method as long as the object of the present invention can be achieved. For example, a method of forming the cleaning layer as a single layer film, a method of coating a resin on the support, a method of forming a resin layer separately and then sticking it on the support, etc. More specifically, for example, a method of using a single layer film, a method of directly applying a cleaning layer on a support (eg, a transport member) such as a silicon wafer using a spin coat method, a spray method, or the like, a PET film And a method of forming a cleaning layer on a polyimide film by coating using a comma coating method, a fountain method, a gravure method, or the like.

  Any appropriate support can be adopted as the support as long as it can support the cleaning layer. Any appropriate thickness can be adopted as the thickness of the support as long as the object of the present invention can be achieved. Preferably it is 500 micrometers or less, More preferably, it is 3-300 micrometers, Most preferably, it is 5-250 micrometers.

  The surface of the above-mentioned support is subjected to conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Or a physical treatment or a coating treatment with a primer (for example, the above-mentioned adhesive substance) may be applied. The support may be a single layer or a multilayer body.

  As the material for the support, any appropriate material can be adopted depending on the purpose within a range where the object of the present invention can be achieved. For example, engineering plastic and super engineering plastic films can be mentioned. Specific examples of engineering plastics and super engineering plastics include polyimide, polyethylene, polyethylene terephthalate, acetyl cellulose, polycarbonate, polypropylene, and polyamide. As the physical properties such as molecular weight, any appropriate physical properties can be adopted as long as the object of the present invention can be achieved. Any appropriate method can be adopted as a method of forming the support as long as the object of the present invention can be achieved.

  Typically, a protective film is bonded to the cleaning layer in advance, and can be peeled off at an appropriate stage such as in use. The protective film is typically used for the purpose of protecting the cleaning layer when the cleaning layer is formed or when the cleaning layer and the support are bonded (press-bonded).

  Arbitrary appropriate films are employ | adopted for the protective film in the range which can achieve the objective of this invention. For example, polyolefin such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene vinyl acetate copolymer, ionomer resin, ethylene ) Acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, plastic film, polyimide, and fluororesin film.

  The protective film is preferably subjected to a release treatment with a release treatment agent or the like according to the purpose. Examples of the release treatment agent include silicone compounds, long chain alkyl compounds, fluorine compounds, fatty acid amide compounds, and silica compounds. Silicone compounds are particularly preferred.

  Polyolefin resin-based films such as polyethylene, polypropylene, polybutene, polybutadiene, and polymethylpentene have mold releasability without using a mold release treatment agent, and thus can be used alone as a protective film.

  The thickness of the protective film is preferably 1 to 100 μm, more preferably 10 to 100 μm. Any appropriate method can be adopted as a method for forming the protective film as long as the object of the present invention can be achieved. For example, it can be formed by an injection molding method, an extrusion molding method, or a blow molding method.

  As a use of the cleaning member of the present invention, any appropriate use can be adopted within the scope of the object of the present invention. Preferably, it is used for removing foreign substances on the substrate and removing foreign substances in the substrate processing apparatus. More specifically, for example, it is suitably used for cleaning a substrate processing apparatus that dislikes fine foreign matters, such as a manufacturing apparatus or an inspection apparatus such as a semiconductor, a flat panel display, or a printed board. As a transport member used for cleaning by transporting the substrate processing apparatus, any suitable transport member can be adopted within the scope of the object of the present invention. Specifically, for example, substrates for flat panel displays such as semiconductor wafers, LCDs and PDPs, other compact disks, and substrates such as MR heads can be mentioned.

  In the present invention, the substrate processing apparatus for removing dust is not particularly limited. For example, an exposure apparatus, a resist coating apparatus, a developing apparatus, an ashing apparatus, a dry etching apparatus, an ion implantation apparatus, a PVD apparatus, a CVD apparatus, and an appearance inspection apparatus. And wafer prober.

B. Transport Member with Cleaning Function FIG. 2 is a schematic cross-sectional view of a transport member with a cleaning function in the present invention. As shown in FIG. 2, the carrying member 200 with a cleaning function includes a carrying member 50 and a cleaning layer 20 on at least one side (one side in the illustrated example) of the carrying member 50. That is, in this embodiment, the cleaning layer 20 is directly formed on the transport member 50. By transporting such a transporting member with a cleaning function in the apparatus and contacting / moving it to the site to be cleaned, it can be easily and reliably cleaned and removed without causing a transport trouble due to foreign matter adhering to the apparatus. .

  As the transport member 50, any appropriate substrate is used according to the type of substrate processing apparatus that is a target for removing foreign matter. Specific examples include semiconductor wafers (for example, silicon wafers), flat panel display substrates such as LCDs and PDPs, substrates such as compact disks and MR heads.

  Regarding the cleaning layer 20 in the conveying member with a cleaning function, the description of the cleaning layer in the above section A can be used.

  The transport member with a cleaning function may be manufactured by laminating a cleaning sheet on the transport member, or may be manufactured by directly providing a cleaning layer on at least one surface of the transport member. That is, the curable resin composition described in the above section A as the material for the cleaning layer, or a heat-resistant polymer resin is applied and cured by an active energy source, or heat-treated at a high temperature after drying. The cleaning layer may be formed by this method. After or during the formation of the cleaning layer, the protective film described in the above section A is preferably bonded onto the cleaning layer.

C. Cleaning Method The cleaning method in the present invention includes transporting the transport member with a cleaning function of the present invention into the substrate processing apparatus. By transporting the transport member with a cleaning function of the present invention into a desired substrate processing apparatus and bringing it into contact with the site to be cleaned, the foreign matter adhering to the site to be cleaned can be easily and reliably removed by cleaning.

  The substrate processing apparatus cleaned by the cleaning method is not particularly limited. Specific examples of the substrate processing apparatus include various apparatuses such as an exposure irradiation apparatus for circuit formation, a resist coating apparatus, a sputtering apparatus, an ion implantation apparatus, a dry etching apparatus, and a wafer prober in addition to the apparatuses already described in this specification. And substrate processing apparatuses used at high temperatures such as ozone asher, resist coater, oxidation diffusion furnace, atmospheric pressure CVD apparatus, reduced pressure CVD apparatus, plasma CVD apparatus, and the like.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited by these Examples. In the examples, “parts” are based on weight.

[Specific surface area of the cleaning layer]
The actual surface area was measured using a fluid type specific surface area automatic measuring device (manufactured by Shimadzu Corporation, Flowo III 2300) using krypton gas as the adsorbed gas.
The specific surface area of the cleaning layer having columnar structure convex portions on the surface was determined by the formula (2).
S _X = S _A / S _B (2)
S _X : Specific surface area
S _A : Actual surface area of one side of sample ({Actual surface area of both sides of sample− (Actual surface area of both sides of untreated sample / 2)})
S _B : Apparent surface area of one surface of the sample On the other hand, the specific surface area of the cleaning layer that does not have the convex portion of the columnar structure on the surface was determined by the equation (3).
S _X = S _A / S _B (3)
S _X : Specific surface area S _A : Actual surface area of one surface of sample (actual surface area of both surfaces of sample / 2)
S _B : Apparent surface area of one side of sample

[Density of convex parts of the columnar structure on the surface of the cleaning layer]
The density of the convex portions of the columnar structure on the surface of the cleaning layer was measured by counting the number of convex portions of the columnar structure on 1 cm ^{2 of} the cleaning layer surface.

[Aspect ratio of convex part of columnar structure]
The aspect ratio of the convex portion of the columnar structure on the surface of the cleaning layer was measured by SEM observation of the cleaning layer from the side surface.

[Length of projecting portion of convex part of columnar structure]
The length of the protruding portion of the convex portion of the columnar structure on the surface of the cleaning layer was measured by SEM observation of the cleaning layer from the side.

[Dust removal]
The dust removal property was evaluated by the following method. That is, silicon powder having an average particle diameter of 0.5 μm was uniformly attached on an 8-inch silicon wafer so that the number of particles was about 10,000. Next, a polymer resin film having a cleaning layer having a convex portion with a columnar structure on the surface was cut out to 10 cm × 10 cm, and the cleaning layer was brought into contact with the 8 inch silicon wafer to which silicon powder was adhered for 1 minute. After 2 minutes, the activated film was removed, and the number of 0.5 μm silicon powder particles was measured with a particle counter (manufactured by KLA tencor, SurfScan-6200) to calculate the dust removal rate. The measurement was performed 3 times and the average was obtained.

[Example 1]
A polyimide film (manufactured by Kaneka, Apical NPI25-NPS) is cut so as to have an apparent surface area of 100 cm ² , an oxygen plasma etching process (A) is performed on one surface of the film, and a cleaning layer having a plurality of columnar protrusions on the surface is provided. Produced.

The oxygen plasma etching process (A) is a plasma etching process using oxygen gas, the distance between electrodes of the plasma generator is 10 cm, the RF power source, the oxygen gas flow rate 300 sccm, the discharge power density 0.78 W / cm ² , the processing time 600 seconds, The discharge power energy was 468 W · sec / cm ² .

  For the obtained cleaning layer, the specific surface area of the cleaning layer, the density of the convex portions of the columnar structure on the surface of the cleaning layer, the aspect ratio of the convex portions of the columnar structure, the length of the protruding portion of the convex portions of the columnar structure, and the dust removal property It was measured. The results are shown in Table 1.

[Example 2]
A polyimide film (manufactured by Kaneka, Apical NPI25-NPS) is cut so as to have an apparent surface area of 100 cm ² , an oxygen plasma etching process (B) is performed on one side of the film, and a cleaning layer having a plurality of columnar protrusions on the surface is provided. Produced.

The oxygen plasma etching process (B) is a plasma etching process using oxygen gas. The distance between electrodes of the plasma generator is 10 cm, the RF power source, the oxygen gas flow rate is 300 sccm, the discharge power density is 0.78 W / cm ² , the processing time is 300 seconds, The discharge power energy was 234 W · sec / cm ² .

  For the obtained cleaning layer, the specific surface area of the cleaning layer, the density of the convex portions of the columnar structure on the surface of the cleaning layer, the aspect ratio of the convex portions of the columnar structure, the length of the protruding portion of the convex portions of the columnar structure, and the dust removal property It was measured. The results are shown in Table 1.

Example 3
A polyimide film (manufactured by Kaneka, Apical NPI25-NPS) is cut so as to have an apparent surface area of 100 cm ² , an oxygen plasma etching process (C) is performed on one side of the film, and a cleaning layer having a plurality of columnar protrusions on the surface is provided. Produced.

The oxygen plasma etching process (C) is a plasma etching process using oxygen gas. The distance between the electrodes of the plasma generator is 10 cm, the RF power source, the oxygen gas flow rate is 20 sccm, the discharge power density is 0.07 W / cm ² , the processing time is 6600 seconds, The discharge power energy was 462 W · sec / cm ² .

  For the obtained cleaning layer, the specific surface area of the cleaning layer, the density of the convex portions of the columnar structure on the surface of the cleaning layer, the aspect ratio of the convex portions of the columnar structure, the length of the protruding portion of the convex portions of the columnar structure, and the dust removal property It was measured. The results are shown in Table 1.

[Comparative Example 1]
A polyimide film (manufactured by Kaneka, Apical NPI25-NPS) is cut so as to have an apparent surface area of 100 cm ² , an oxygen plasma etching process (D) is applied to one side of the film, and a cleaning layer having a plurality of columnar structure protrusions on the surface is provided. Produced.

The oxygen plasma etching process (D) is a plasma etching process using oxygen gas. The distance between electrodes of the plasma generator is 10 cm, the RF power source, the oxygen gas flow rate is 300 sccm, the discharge power density is 0.78 W / cm ² , the processing time is 60 seconds, The discharge power energy was 47 W · sec / cm ² .

  For the obtained cleaning layer, the specific surface area of the cleaning layer, the density of the convex portions of the columnar structure on the surface of the cleaning layer, the aspect ratio of the convex portions of the columnar structure, the length of the protruding portion of the convex portions of the columnar structure, and the dust removal property It was measured. The results are shown in Table 1.

[Comparative Example 2]
A polyimide film (manufactured by Kaneka, Apical NPI25-NPS) was cut to an apparent surface area of 100 cm ² to prepare a cleaning layer.

  For the obtained cleaning layer, the specific surface area of the cleaning layer, the density of the convex portions of the columnar structure on the surface of the cleaning layer, the aspect ratio of the convex portions of the columnar structure, the length of the protruding portion of the convex portions of the columnar structure, and the dust removal property It was measured. The results are shown in Table 1.

  As can be seen from Table 1, in Examples 1 to 3, excellent dust removal performance was exhibited, but in Comparative Examples 1 and 2, sufficient dust removal performance was not obtained.

  The cleaning member and the carrying member with a cleaning function of the present invention are suitably used for cleaning substrate processing apparatuses such as various manufacturing apparatuses and inspection apparatuses.

It is a schematic sectional drawing of the cleaning member obtained by preferable embodiment of this invention. It is a schematic sectional drawing of the conveyance member with a cleaning function obtained by preferable embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Support body 20 Cleaning layer 50 Conveying member 100 Cleaning member 200 Conveying member with a cleaning function

Claims (7)

A cleaning member having a cleaning layer having a plurality of columnar structure protrusions on the surface, wherein the aspect ratio of the protrusions of the columnar structure is 5 or more and 50 or less , and the length of the protruding portion of the protrusions of the columnar structure A cleaning member having a thickness of 100 nm or more and 5000 nm or less and used for removing submicron-size foreign matters. The cleaning member according to claim 1, wherein the density of the convex portions of the columnar structure on the surface of the cleaning layer is 1.0 × 10 ⁸ pieces / cm ² or more.   The cleaning member according to claim 1, wherein a specific surface area of the cleaning layer is 2.0 or more.   The cleaning member according to claim 1, which is used for removing foreign matter on the substrate.   The cleaning member according to claim 1, which is used for removing foreign substances in the substrate processing apparatus.   A conveying member with a cleaning function, comprising: a conveying member; and the cleaning member according to claim 5 provided on at least one surface of the conveying member. A method for cleaning a substrate processing apparatus, comprising transporting the transport member with a cleaning function according to claim 6 into the substrate processing apparatus.

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