JP2008210894A - Wafer processor - Google Patents

Wafer processor Download PDF

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Publication number
JP2008210894A
JP2008210894A JP2007044539A JP2007044539A JP2008210894A JP 2008210894 A JP2008210894 A JP 2008210894A JP 2007044539 A JP2007044539 A JP 2007044539A JP 2007044539 A JP2007044539 A JP 2007044539A JP 2008210894 A JP2008210894 A JP 2008210894A
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Prior art keywords
wafer
rubbing
elastic
processing apparatus
rubbing member
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Japanese (ja)
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Masanori Goto
正憲 後藤
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NEC Electronics Corp
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NEC Electronics Corp
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Priority to JP2007044539A priority Critical patent/JP2008210894A/en
Priority to US12/028,844 priority patent/US20080207095A1/en
Priority to CNA2008100813317A priority patent/CN101252082A/en
Publication of JP2008210894A publication Critical patent/JP2008210894A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces
    • B08B1/32—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer processor in which re-adhesion of slurry deposited to an elastic rubbing member to a wafer edge is controlled and moreover wear of the elastic rubbing member can also be controlled by avoiding intensive contact of the rotating elastic rubbing member with the wafer edge when the same elastic rubbing member enters the front surface of the wafer. <P>SOLUTION: The wafer processor is provided for rubbing at least a single surface of a disk-shaped wafer 30 and includes a wafer rotating mechanism 50 for rotationally driving the wafer 30, a rubbing unit 33 in the structure where the elastic rubbing member 32 for rubbing the front surface of wafer 30 is supported with a supporting member 31, and a rubbing rotation mechanism 51 for rotationally driving, in the constant direction, the rubbing unit 33 at the location where at least a part of the revolting elastic rubbing member 32 moves to the internal side and external side on the front surface of the wafer 30. With the rotational drive in the constant direction, the axial center of the wafer rotating mechanism 50 and the rubbing rotation mechanism 51 is relatively inclined in the direction in which an interval between the supporting member 31 and the wafer 30 at the position where the elastic rubbing member 32 enters the front surface of the wafer 30 becomes larger than that at the position where the elastic rubbing member 32 is separated from the wafer 30. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、円盤状のウェハの少なくとも片面を擦過するウェハ処理装置に関する。   The present invention relates to a wafer processing apparatus for rubbing at least one surface of a disk-shaped wafer.

従来、ウェハ処理装置としてはたとえば、特許文献１に記載されたものがある。同文献に記載されたウェハ処理装置を図４に示す。
このウェハ処理装置では、ウェハ１０がローラーチャックで挟持され、スポンジ状のブラシ１２がディスク状のブラシベース１１に取り付けられている。さらに、ウェハ１０の表面とブラシベース１１の下面とは平行になっている。ウェハ１０のエッジ部までスクラブ洗浄するために、ウェハ１０の軸心とブラシベース１１の軸心の位置関係は、ずれた状態となっている。また、ブラシベース１１に取り付けられたブラシ１２の一部は、ウェハ１０の表面からはみ出ている。
ウェハ１０がスクラブ洗浄される際、ウェハ１０およびブラシベース１１はいずれも回転し、スポンジ状のブラシ１２はウェハ１０の表裏面に押付けられる。そして、ブラシベース１１の中央部から洗浄用液体Ｌが吐出されて、ウェハ１０は洗浄される。
特開２００２−１７７８９８号公報 Conventionally, as a wafer processing apparatus, for example, there is one described in Patent Document 1. FIG. 4 shows a wafer processing apparatus described in this document.
In this wafer processing apparatus, a wafer 10 is held by a roller chuck, and a sponge-like brush 12 is attached to a disk-like brush base 11. Furthermore, the surface of the wafer 10 and the lower surface of the brush base 11 are parallel. In order to scrub clean the edge of the wafer 10, the positional relationship between the axis of the wafer 10 and the axis of the brush base 11 is shifted. A part of the brush 12 attached to the brush base 11 protrudes from the surface of the wafer 10.
When the wafer 10 is scrubbed, both the wafer 10 and the brush base 11 rotate, and the sponge-like brush 12 is pressed against the front and back surfaces of the wafer 10. Then, the cleaning liquid L is discharged from the central portion of the brush base 11, and the wafer 10 is cleaned.
JP 2002-177898 A

しかしながら、特許文献１に記載のウェハ処理装置は、スラリーなどのパーティクルの再付着において改善の余地を残している。   However, the wafer processing apparatus described in Patent Document 1 leaves room for improvement in reattachment of particles such as slurry.

たとえば、特許文献１に記載のウェハ処理装置は、ブラシ１２（ブラシベース１１）の下面とウェハ１０の表面が平行に配置されているため、図５（ｂ）のようにウェハ１０表面にブラシ１２の下面全体が均一に圧接される構造となっている。図５に示すように、ウェハの軸心２０とブラシベースの軸心２１は、相対的に傾斜していない。そして、スクラブ洗浄する際、スクラブ性向上のため、ブラシ１２は一定圧力でウェハ１０の表面に押し付けられる。そのため、ウェハ１０の表面上にあるブラシ１２の先端部は図６に示すように押しつぶされ、ブラシ１２の高さは低くなっている（ウェハ裏面側のブラシは図示なし）。   For example, in the wafer processing apparatus described in Patent Document 1, since the lower surface of the brush 12 (brush base 11) and the surface of the wafer 10 are arranged in parallel, the brush 12 is applied to the surface of the wafer 10 as shown in FIG. The entire lower surface of the structure is pressed against the surface uniformly. As shown in FIG. 5, the axis 20 of the wafer and the axis 21 of the brush base are not relatively inclined. In scrub cleaning, the brush 12 is pressed against the surface of the wafer 10 with a constant pressure in order to improve scrubbing properties. Therefore, the tip of the brush 12 on the surface of the wafer 10 is crushed as shown in FIG. 6, and the height of the brush 12 is reduced (the brush on the back side of the wafer is not shown).

一方、ウェハ１０からはみ出た部分のブラシ１２の先端部は押しつぶされていない。ブラシベース１１は回転しているため、ブラシ１２の一部は公転しながら、「ウェハ１０表面」から「はみ出し部分（ウェハ１０無し）」へ、「はみ出し部分（ウェハ１０無し）」から「ウェハ１０表面」へ移動する動作を繰り返す。この「はみ出し部分（ウェハ１０無し）」から「ウェハ１０表面」へ移動する際、ブラシ１２のはみ出し部は、ウェハ１０のエッジ部と強く接触し、押しつぶされながら徐々にウェハ１０の表面に乗り上げていく。図７中の太線で示した区間Ｚは、ブラシ１２が回転することにより、ブラシ１２のはみ出し部がウェハ１０の表面上に侵入する際に、ブラシ１２がウェハ１０に強く接触する区間を示している。したがって、区間Ｚで、ブラシ１２に付着していたスラリーなどのパーティクルは、ウェハ１０のエッジ部に再付着する場合がある。   On the other hand, the tip portion of the brush 12 that protrudes from the wafer 10 is not crushed. Since the brush base 11 is rotating, a part of the brush 12 revolves, and from the “surface of the wafer 10” to the “protruding portion (without the wafer 10)” and from the “protruding portion (without the wafer 10)” to the “wafer 10. Repeat the movement to “surface”. When moving from the “protruding portion (no wafer 10)” to the “wafer 10 surface”, the protruding portion of the brush 12 is in strong contact with the edge portion of the wafer 10 and gradually climbs onto the surface of the wafer 10 while being crushed. Go. A section Z indicated by a thick line in FIG. 7 indicates a section in which the brush 12 strongly contacts the wafer 10 when the protruding portion of the brush 12 enters the surface of the wafer 10 by the rotation of the brush 12. Yes. Therefore, in the section Z, particles such as slurry attached to the brush 12 may reattach to the edge portion of the wafer 10.

このような再付着は、ブラシ１２のウェハ１０への押付け圧が大きくなるほど顕著になる。また、ブラシ１２のはみ出し部とウェハ１０のエッジ部との強い接触は、ウェハ１０の外側に位置するブラシ１２の先端部の磨耗を促進する。   Such reattachment becomes more prominent as the pressing pressure of the brush 12 against the wafer 10 increases. Further, the strong contact between the protruding portion of the brush 12 and the edge portion of the wafer 10 promotes the wear of the tip portion of the brush 12 located outside the wafer 10.

また、ブラシ１２のウェハ１０への押付け圧が小さくなると、スラリー除去性能が不十分となり、品質低下などといった問題が生じうる。   In addition, when the pressing pressure of the brush 12 against the wafer 10 is reduced, the slurry removal performance becomes insufficient, and problems such as deterioration in quality may occur.

本発明によれば、円盤状のウェハの少なくとも片面を擦過するウェハ処理装置であって、ウェハを回転駆動するウェハ回転機構と、ウェハの表面を擦過する弾性擦過部材が支持部材で支持されている構造の擦過ユニットと、公転する弾性擦過部材の少なくとも一部がウェハの表面の内側と外側とに移動する位置で擦過ユニットを一定方向に回転駆動する擦過回転機構と、一定方向の回転駆動により弾性擦過部材がウェハの表面に侵入する位置での支持部材とウェハとの間隔が離脱する位置での間隔より大きくなる方向にウェハ回転機構と擦過回転機構との軸心が相対的に傾斜しているウェハ処理装置が提供される。   According to the present invention, there is provided a wafer processing apparatus for rubbing at least one surface of a disk-shaped wafer, wherein a wafer rotating mechanism for rotating the wafer and an elastic rubbing member for rubbing the surface of the wafer are supported by the support member. A rubbing unit of structure, a rubbing rotation mechanism that rotates the rubbing unit in a certain direction at a position where at least a part of the revolving elastic rubbing member moves to the inside and the outside of the wafer surface, and elastic by a rotation driving in a certain direction The axes of the wafer rotating mechanism and the rubbing rotation mechanism are relatively inclined in a direction in which the distance between the support member and the wafer at the position where the rubbing member enters the wafer surface is larger than the distance at the position where the rubbing member leaves. A wafer processing apparatus is provided.

このウェハ処理装置においては、弾性擦過部材がウェハの表面に侵入する位置での支持部材とウェハとの間隔が離脱する位置での間隔より大きくなることにより、回転する弾性擦過部材がウェハの表面に侵入する際のウェハエッジ部との強い接触が回避される。   In this wafer processing apparatus, when the distance between the support member and the wafer at the position where the elastic rubbing member enters the wafer surface becomes larger than the distance at the position where the elastic rubbing member separates, the rotating elastic rubbing member is placed on the surface of the wafer. Strong contact with the wafer edge when entering is avoided.

本発明によれば、回転する弾性擦過部材がウェハの表面に侵入する際のウェハエッジ部との強い接触が回避されるので、弾性擦過部材に付着したスラリーのウェハエッジ部への再付着が抑制でき、あわせて弾性擦過部材の磨耗も抑制することができるウェハ処理装置が提供される。   According to the present invention, since strong contact with the wafer edge portion when the rotating elastic rubbing member enters the surface of the wafer is avoided, reattachment of the slurry adhering to the elastic rubbing member to the wafer edge portion can be suppressed, In addition, there is provided a wafer processing apparatus capable of suppressing wear of the elastic rubbing member.

本発明の実施の一形態を図１、２を参照して以下に説明する。ただし、本実施の形態に関して前述した一従来例と同一の部分は、同一の名称を使用して詳細な説明は省略する。   An embodiment of the present invention will be described below with reference to FIGS. However, the same portions as those of the conventional example described above with respect to the present embodiment are denoted by the same names, and detailed description thereof is omitted.

図２は、ウェハ処理装置の模式的な平面図を示している。
本実施の形態のウェハ処理装置は、円盤状のウェハ３０の少なくとも片面を擦過するウェハ処理装置であって、前記ウェハ３０を回転駆動するウェハ回転機構５０と、前記ウェハ３０の表面を擦過する弾性擦過部材３２が支持部材３１で支持されている構造の擦過ユニット３３と、公転する前記弾性擦過部材３２の少なくとも一部が前記ウェハ３０の表面の内側と外側とに移動する位置で前記擦過ユニット３３を一定方向に回転駆動する擦過回転機構５１と、一定方向の回転駆動により前記弾性擦過部材３２が前記ウェハ３０の表面に侵入する位置での前記支持部材３１と前記ウェハ３０との間隔が離脱する位置での間隔より大きくなる方向に前記ウェハ回転機構５０と前記擦過回転機構５１との軸心が相対的に傾斜しているウェハ処理装置である。 FIG. 2 is a schematic plan view of the wafer processing apparatus.
The wafer processing apparatus of the present embodiment is a wafer processing apparatus that rubs at least one surface of a disk-shaped wafer 30, and a wafer rotation mechanism 50 that rotates the wafer 30 and an elastic that rubs the surface of the wafer 30. The rubbing unit 33 having a structure in which the rubbing member 32 is supported by the support member 31 and the rubbing unit 33 at a position where at least a part of the revolving elastic rubbing member 32 moves to the inside and the outside of the surface of the wafer 30. And a gap between the wafer 30 and the support member 31 at a position where the elastic rubbing member 32 enters the surface of the wafer 30 by rotation driving in a certain direction. Wafer processing apparatus in which axial centers of the wafer rotation mechanism 50 and the rubbing rotation mechanism 51 are relatively inclined in a direction larger than the interval at the position. A.

ウェハ処理装置は、ウェハ回転機構５０と擦過ユニット３３と擦過回転機構５１とを有する。   The wafer processing apparatus includes a wafer rotation mechanism 50, a rubbing unit 33, and a rubbing rotation mechanism 51.

ウェハ回転機構５０は、軸心４０を中心にウェハ３０を回転駆動させるものである。   The wafer rotation mechanism 50 rotates the wafer 30 around the axis 40.

擦過ユニット３３は、ウェハ３０の表面を擦過する弾性擦過部材３２を支持部材３１で支持した構造を有している。擦過ユニット３３が擦過回転機構５１の軸心４１を中心に回転することにより、弾性擦過部材３２は公転する。公転する弾性擦過部材３２の少なくとも一部は、ウェハ３０の表面の内側と外側とに移動しながら、ウェハ３０の表面を擦過する。このような弾性擦過部材３２の移動により、ウェハ３０の表面全体を洗浄できる。   The rubbing unit 33 has a structure in which an elastic rubbing member 32 for rubbing the surface of the wafer 30 is supported by a support member 31. As the rubbing unit 33 rotates about the axis 41 of the rubbing rotation mechanism 51, the elastic rubbing member 32 revolves. At least a part of the revolving elastic rubbing member 32 rubs the surface of the wafer 30 while moving to the inside and outside of the surface of the wafer 30. By such movement of the elastic rubbing member 32, the entire surface of the wafer 30 can be cleaned.

また、擦過ユニット３３は、支持部材３１で複数の弾性擦過部材３２が放射状に支持されている。複数の弾性擦過部材３２が放射状に支持されていても、回転する弾性擦過部材３２がウェハ３０の表面に侵入する際のウェハ３０のエッジ部との強い接触が回避されるので、弾性擦過部材３２のエッジ部等に付着しうるスラリーの再付着も抑制できる。   In the rubbing unit 33, a plurality of elastic rubbing members 32 are supported radially by the support member 31. Even if the plurality of elastic rubbing members 32 are supported radially, strong contact with the edge portion of the wafer 30 when the rotating elastic rubbing member 32 enters the surface of the wafer 30 is avoided. It is also possible to suppress the re-adhesion of the slurry that can adhere to the edge portion or the like.

擦過回転機構５１は、公転する弾性擦過部材３２の少なくとも一部がウェハ３０の表面の内側と外側とに移動する位置で擦過ユニット３３を一定方向に回転駆動させるものである。   The rubbing rotation mechanism 51 rotates the rubbing unit 33 in a certain direction at a position where at least a part of the revolving elastic rubbing member 32 moves to the inside and the outside of the surface of the wafer 30.

図１は図２中のＡ−Ａ'断面を表す図である。一定方向の回転駆動により弾性擦過部材３２がウェハ３０の表面に侵入する位置での支持部材３１とウェハ３０との間隔が離脱する位置での間隔より大きくなる方向にウェハ回転機構５０の軸心４０と擦過回転機構５１の軸心４１とが相対的に傾斜している。軸心４０と軸心４１との傾斜角度は、たとえば、０．６°から１．２°の範囲が好ましい。   FIG. 1 is a diagram showing a cross section taken along line AA ′ in FIG. The axis 40 of the wafer rotation mechanism 50 is in a direction in which the gap between the support member 31 and the wafer 30 at the position where the elastic rubbing member 32 enters the surface of the wafer 30 by rotation driving in a certain direction is larger than the gap at the position where the wafer 30 is separated. And the axis 41 of the rubbing rotation mechanism 51 are relatively inclined. The inclination angle between the axis 40 and the axis 41 is preferably in the range of 0.6 ° to 1.2 °, for example.

擦過回転機構５１の軸心４１が傾斜していることにより、弾性擦過部材３２の押付け圧はウェハ３０の表面に侵入する区間で最小となり、その対角側のウェハ３０上で最大となる。これにより、弾性擦過部材３２がウェハ３０の表面に侵入する際にウェハ３０のエッジ部に強く接触することを防止できる。すなわち、弾性擦過部材３２に付着したスラリーのウェハ３０のエッジ部への再付着が抑制でき、あわせて弾性擦過部材３２の磨耗も抑制することができる。   Since the axis 41 of the rubbing rotation mechanism 51 is inclined, the pressing pressure of the elastic rubbing member 32 is minimized in the section entering the surface of the wafer 30 and is maximized on the wafer 30 on the diagonal side. Thereby, it is possible to prevent the elastic rubbing member 32 from coming into strong contact with the edge portion of the wafer 30 when entering the surface of the wafer 30. That is, the reattachment of the slurry adhering to the elastic rubbing member 32 to the edge portion of the wafer 30 can be suppressed, and the wear of the elastic rubbing member 32 can also be suppressed.

また、本実施形態では、軸心４０に対して擦過回転機構５１の軸心４１が傾斜している例を示したが、軸心４１に対してウェハ回転機構５０の軸心４０が傾斜していてもよい（図３）。
すなわち区間Ｚで弾性擦過部材３２の先端部がウェハ３０のエッジ部に押し付けられない程度に、ウェハ回転機構５０の軸心４０と擦過回転機構５１の軸心４１とが相対的に傾斜していればよい。 In this embodiment, the example in which the axis 41 of the rubbing rotation mechanism 51 is inclined with respect to the axis 40 is shown. However, the axis 40 of the wafer rotation mechanism 50 is inclined with respect to the axis 41. (FIG. 3).
That is, the axis 40 of the wafer rotating mechanism 50 and the axis 41 of the rubbing rotating mechanism 51 are relatively inclined so that the tip of the elastic rubbing member 32 is not pressed against the edge of the wafer 30 in the section Z. That's fine.

本実施形態では、弾性擦過部材３２が放射状に支持されている場合を示したが、弾性擦過部材３２が支持部材３１上に一様に支持されている場合でもよい。弾性擦過部材３２としては、ブラシ、スポンジなど弾性のある材料が挙げられる。また、傾ける方向・角度、各軸心の位置、擦過ユニットの径、形状・大きさ等は上記問題解決のため、最適化される。   In the present embodiment, the case where the elastic rubbing member 32 is supported radially is shown, but the elastic rubbing member 32 may be uniformly supported on the support member 31. Examples of the elastic rubbing member 32 include elastic materials such as brushes and sponges. Further, the direction and angle of tilting, the position of each axis, the diameter, shape and size of the rubbing unit are optimized to solve the above problems.

また、本実施の形態では、ウェハ３０が３つのウェハ回転機構５０によって回転する場合について説明したが、ウェハ回転機構５０の数、位置はこの場合に限られない。   In the present embodiment, the case where the wafer 30 is rotated by the three wafer rotation mechanisms 50 has been described. However, the number and position of the wafer rotation mechanisms 50 are not limited to this case.

また、本実施の形態では、擦過ユニット３３と擦過回転機構５１がウェハ３０の表面にある場合について説明したが、ウェハ３０の表裏両面であっても同様の効果が得られる。   Further, in the present embodiment, the case where the rubbing unit 33 and the rubbing rotation mechanism 51 are on the surface of the wafer 30 has been described, but the same effect can be obtained even on both the front and back surfaces of the wafer 30.

また、本実施の形態では、ウェハ処理装置が洗浄に用いられる場合について説明したが、洗浄以外にも研磨などに用いることもできる。   Further, although the case where the wafer processing apparatus is used for cleaning has been described in this embodiment, it can also be used for polishing or the like in addition to cleaning.

本実施の形態および変形例は、その内容が相反しない範囲で組み合わせることができる。   This embodiment and the modification can be combined as long as the contents do not conflict with each other.

ウェハ処理装置を示す模式的な断面図である。It is typical sectional drawing which shows a wafer processing apparatus. ウェハ処理装置を示す模式的な平面図である。It is a typical top view which shows a wafer processing apparatus. ウェハ処理装置を示す模式的な断面図である。It is typical sectional drawing which shows a wafer processing apparatus. 従来例のウェハ処理装置を示す模式的な斜視図である。It is a typical perspective view which shows the wafer processing apparatus of a prior art example. 従来例のウェハ処理装置を示す模式的な平面図（ａ）と断面図（ｂ）である。It is the typical top view (a) and sectional drawing (b) which show the wafer processing apparatus of a prior art example. 従来例のウェハ処理装置を示す模式的な断面図である。It is typical sectional drawing which shows the wafer processing apparatus of a prior art example. 従来例のウェハ処理装置を示す模式的な平面図である。It is a typical top view which shows the wafer processing apparatus of a prior art example.

符号の説明Explanation of symbols

１０ ウェハ
１１ ブラシベース
１２ ブラシ
２０ ウェハの軸心
２１ ブラシベースの軸心
３０ ウェハ
３１ 支持部材
３２ 弾性擦過部材
３３ 擦過ユニット
４０ ウェハ回転機構の軸心
４１ 擦過回転機構の軸心
５０ ウェハ回転機構
５１ 擦過回転機構 DESCRIPTION OF SYMBOLS 10 Wafer 11 Brush base 12 Brush 20 Wafer axis 21 Brush base axis 30 Wafer 31 Support member 32 Elastic rubbing member 33 Rub unit 40 Wafer rotation axis 41 Rub rotation mechanism axis 50 Wafer rotation mechanism 51 Abrasion Rotating mechanism

Claims (3)

円盤状のウェハの少なくとも片面を擦過するウェハ処理装置であって、
前記ウェハを回転駆動するウェハ回転機構と、
前記ウェハの表面を擦過する弾性擦過部材が支持部材で支持されている構造の擦過ユニットと、
公転する前記弾性擦過部材の少なくとも一部が前記ウェハの表面の内側と外側とに移動する位置で前記擦過ユニットを一定方向に回転駆動する擦過回転機構と、
一定方向の回転駆動により前記弾性擦過部材が前記ウェハの表面に侵入する位置での前記支持部材と前記ウェハとの間隔が離脱する位置での間隔より大きくなる方向に前記ウェハ回転機構と前記擦過回転機構との軸心が相対的に傾斜しているウェハ処理装置。 A wafer processing apparatus for rubbing at least one surface of a disk-shaped wafer,
A wafer rotation mechanism for rotating the wafer;
A rubbing unit having a structure in which an elastic rubbing member for rubbing the surface of the wafer is supported by a support member;
A rubbing rotation mechanism that rotationally drives the rubbing unit in a fixed direction at a position where at least a part of the revolving elastic rubbing member moves to the inside and outside of the surface of the wafer;
The wafer rotation mechanism and the rubbing rotation in a direction in which the distance between the support member and the wafer at a position where the elastic rubbing member enters the surface of the wafer by a rotational drive in a certain direction is larger than a distance at a position where the wafer is separated. A wafer processing apparatus in which an axis center with a mechanism is relatively inclined. 前記擦過ユニットは、前記支持部材で複数の前記弾性擦過部材が放射状に支持されている請求項１に記載のウェハ処理装置。   The wafer processing apparatus according to claim 1, wherein the rubbing unit includes a plurality of elastic rubbing members supported radially by the support member. 前記擦過ユニットの前記弾性擦過部材により前記ウェハの表面を擦過することで洗浄する請求項１または２に記載のウェハ処理装置。   The wafer processing apparatus according to claim 1, wherein the wafer is cleaned by rubbing the surface of the wafer with the elastic rubbing member of the rubbing unit.
JP2007044539A 2007-02-23 2007-02-23 Wafer processor Pending JP2008210894A (en)

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JP2007044539A JP2008210894A (en) 2007-02-23 2007-02-23 Wafer processor
US12/028,844 US20080207095A1 (en) 2007-02-23 2008-02-11 Apparatus for processing wafer
CNA2008100813317A CN101252082A (en) 2007-02-23 2008-02-25 Apparatus for processing wafer

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