JP2008028175A - Wafer cleaning apparatus - Google Patents

Wafer cleaning apparatus Download PDF

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JP2008028175A
JP2008028175A JP2006199503A JP2006199503A JP2008028175A JP 2008028175 A JP2008028175 A JP 2008028175A JP 2006199503 A JP2006199503 A JP 2006199503A JP 2006199503 A JP2006199503 A JP 2006199503A JP 2008028175 A JP2008028175 A JP 2008028175A
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wafer
cleaning
rotating plate
rotating
cleaning member
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Hiroaki Takao
浩昭 高尾
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Fujifilm Corp
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Fujifilm Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To remove both comparatively large particles firmly adhering on a wafer and comparatively small particles deposited in a recess of the surface of the semiconductor wafer. <P>SOLUTION: The wafer cleaning apparatus 10 is provided with a first cleaning head 12 having a first sponge brush 54 formed to be highly rigid so that it can remove the comparatively large particles 56 firmly adhering on the wafer 14, and a second cleaning head 13 having a second sponge brush 64 formed to be low-rigid so that it can remove the comparatively small particles 68 deposited in the recess of the wafer 14. In cleaning the wafer 14, the first cleaning head 12 is first driven to rotate the first sponge brush 54 in a state of abutting on the wafer 14. After that, the second cleaning head 13 is driven to rotate the second sponge brush 64 in a state of abutting on the wafer 14. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ウエハの表面に付着した異物を除去するウエハ洗浄装置に関するものである。   The present invention relates to a wafer cleaning apparatus that removes foreign matter adhering to the surface of a wafer.

半導体の製造工程は、外径150mm〜300mmの円盤形状のウエハ上に、同一のデバイスを複数形成する前工程と、ウエハからチップを切り出しパッケージ化する後工程との2つに大きく分けることができる。さらに、前工程には、ウエハの表面に付着した微細なゴミや不純物などの異物(パーティクル)を除去して歩留まりを良くするためのウエハ洗浄工程が組み込まれている。そして、ウエハ洗浄工程では、例えば、下記特許文献1、並びに、下記特許文献2に記載されているように、スポンジブラシを、ウエハの表面に摺接させてパ−ティクルを除去するウエハ洗浄装置が用いられる。
特許第3114156号公報 特開2004−273530号公報
Semiconductor manufacturing processes can be broadly divided into two processes: a pre-process for forming a plurality of identical devices on a disk-shaped wafer having an outer diameter of 150 mm to 300 mm, and a post-process for cutting chips from the wafer into a package. . Further, a wafer cleaning step for improving the yield by removing foreign matters (particles) such as fine dust and impurities adhering to the wafer surface is incorporated in the pre-process. In the wafer cleaning process, for example, as described in the following Patent Document 1 and the following Patent Document 2, a wafer cleaning apparatus that removes particles by bringing a sponge brush into sliding contact with the surface of a wafer is provided. Used.
Japanese Patent No. 3114156 JP 2004-273530 A

しかしながら、従来のウエハ洗浄装置では、スポンジブラシの剛性が高いと、ウエハに強固に付着した比較的大きなパーティクルは除去できるが、ウエハの表面の窪みに溜まった比較的小さなパーティクルは除去できない。また、スポンジブラシの剛性が低いと、ウエハの表面の窪みに溜まった比較的小さなパーティクルは除去できるが、ウエハに強固に付着した比較的大きなパーティクルは除去できないといった問題があった。   However, in the conventional wafer cleaning apparatus, when the sponge brush has high rigidity, relatively large particles firmly attached to the wafer can be removed, but relatively small particles accumulated in the recess on the surface of the wafer cannot be removed. Further, when the sponge brush has low rigidity, relatively small particles accumulated in the recesses on the surface of the wafer can be removed, but relatively large particles firmly adhered to the wafer cannot be removed.

本発明は、上記問題を解決するためになされたものであり、ウエハに強固に付着した比較的大きなパーティクル、及び、ウエハの表面の窪みに溜まった比較的小さなパーティクルの両方を除去できるウエハ洗浄装置を提供することを目的としている。   The present invention has been made to solve the above problems, and is a wafer cleaning apparatus capable of removing both relatively large particles firmly attached to a wafer and relatively small particles accumulated in a recess on the surface of the wafer. The purpose is to provide.

上記目的を達成するために、本発明のウエハ洗浄装置は、洗浄液を供給しながらウエハの表面に付着した異物を除去するウエハ洗浄装置において、柔軟な第1洗浄部材の根本側を固定した第1回転板と、前記第1洗浄部材よりも柔軟な第2洗浄部材の根本側を固定した第2回転板と、前記第1、第2の洗浄部材の先端側がともに前記ウエハの表面に略平行となるように、前記ウエハの表面に略平行な方向に前記第1、第2の2つの回転板が並べて取り付けられる回転板支持機構とを備えるとともに、前記回転板支持機構に、前記第1、第2の洗浄部材の一方を選択的に前記ウエハの表面に接触させるように、前記第1、第2の回転板のそれぞれを前記ウエハの表面に略垂直な方向に移動させる移動機構と、前記一方の洗浄部材が取り付けられた回転板を前記ウエハの表面に略平行な面内で回転させる回転機構とを設けたことを特徴としている。   In order to achieve the above object, a wafer cleaning apparatus according to the present invention is a first cleaning apparatus in which a base side of a flexible first cleaning member is fixed in a wafer cleaning apparatus that removes foreign matter adhering to the surface of a wafer while supplying a cleaning liquid. The rotating plate, the second rotating plate that fixes the base side of the second cleaning member that is more flexible than the first cleaning member, and the leading ends of the first and second cleaning members are both substantially parallel to the surface of the wafer. And a rotating plate support mechanism to which the first and second rotating plates are mounted side by side in a direction substantially parallel to the surface of the wafer, and the rotating plate support mechanism includes the first and first rotating plates. A moving mechanism for moving each of the first and second rotating plates in a direction substantially perpendicular to the surface of the wafer so that one of the two cleaning members is selectively brought into contact with the surface of the wafer; The cleaning member is attached It is characterized in that the rotary plate is provided with a rotating mechanism for rotating in a plane substantially parallel to the surface of the wafer.

前記移動機構は、前記第1回転板を移動させる第1アクチュエータと、前記第2回転板を移動させる第2アクチュエータとを備え、前記回転機構は、前記第1回転板を回転させる第1モータと、前記第2回転板を回転させる第2モータとを備えているものでもよい。   The moving mechanism includes a first actuator that moves the first rotating plate, and a second actuator that moves the second rotating plate, and the rotating mechanism rotates a first motor that rotates the first rotating plate; And a second motor that rotates the second rotating plate.

また、前記第1洗浄部材は、前記第1回転板を回転中心から周縁に向かう直線または曲線で区画した領域ごとに分割して配置されるとともに、各領域の境界には隙間が設けられていることが好ましい。   In addition, the first cleaning member is divided and arranged for each region obtained by dividing the first rotating plate by a straight line or a curve from the rotation center to the periphery, and a gap is provided at the boundary of each region. It is preferable.

さらに、前記第2洗浄部材は、前記第2回転板を回転中心から周縁に向かう直線または曲線で区画した領域ごとに分割して配置されるとともに、各領域の境界には隙間が設けられていることが好ましい。   Further, the second cleaning member is divided and arranged for each region obtained by dividing the second rotating plate by a straight line or a curve from the rotation center to the periphery, and a gap is provided at the boundary of each region. It is preferable.

前記第1洗浄部材は、ポリビニルアルコールを主成分として構成され、前記第2洗浄部材は、ポリウレタンを主成分として構成されるものでもよい。   The first cleaning member may be configured with polyvinyl alcohol as a main component, and the second cleaning member may be configured with polyurethane as a main component.

本発明によれば、第1洗浄部材を備えた第1回転板と、第1洗浄部材よりも柔軟な第2洗浄部材を備えた第2回転板とを用いてウエハを洗浄するようにしたので、半導体ウエハに強固に付着した比較的大きなパーティクル、及び、半導体ウエハの表面の窪みに溜まった比較的小さなパーティクルの両方を除去可能なウエハ洗浄装置を提供できる。   According to the present invention, the wafer is cleaned using the first rotating plate provided with the first cleaning member and the second rotating plate provided with the second cleaning member that is more flexible than the first cleaning member. It is possible to provide a wafer cleaning apparatus capable of removing both relatively large particles firmly attached to a semiconductor wafer and relatively small particles accumulated in a recess on the surface of the semiconductor wafer.

また、第1洗浄部材を、第1回転板の回転中心から周縁に向かう直線または曲線により区画された領域毎に分割して配置するとともに、各領域の境界に隙間を設けることによって、この隙間から回転板の外側へ効率よくパーティクルを排出できる。同様に、第2洗浄部材を、第2回転板の回転中心から周縁に向かう直線または曲線により区画された領域毎に分割して配置するとともに、各領域の境界に隙間を設けることによって、この隙間から第2回転板の外側へ効率よくパーティクルを排出できる。   Further, the first cleaning member is divided and arranged for each region partitioned by a straight line or a curve from the rotation center of the first rotating plate toward the periphery, and a clearance is provided at the boundary of each region. Particles can be discharged efficiently to the outside of the rotating plate. Similarly, the second cleaning member is divided and arranged for each region partitioned by a straight line or a curve from the rotation center of the second rotating plate toward the periphery, and a clearance is provided at the boundary of each region. The particles can be efficiently discharged from the outside to the outside of the second rotating plate.

図1において、本発明のウエハ洗浄装置10は、半導体の製造工程に組み込まれたウエハ洗浄工程で用いられる。ウエハ洗浄装置10は、後述する第1洗浄ヘッド12または第2洗浄ヘッド13を順にウエハ14の表面に当接させた状態で回転させて、ウエハ14に付着したパーティクルを除去するものである。ウエハ洗浄装置10は、支持台16と、ノズル17と、ブラシ装置18とを備え、これらが制御部19に接続されて駆動制御される。   In FIG. 1, a wafer cleaning apparatus 10 of the present invention is used in a wafer cleaning process incorporated in a semiconductor manufacturing process. The wafer cleaning apparatus 10 rotates a first cleaning head 12 or a second cleaning head 13, which will be described later, in contact with the surface of the wafer 14 in order to remove particles adhering to the wafer 14. The wafer cleaning apparatus 10 includes a support base 16, a nozzle 17, and a brush device 18, which are connected to a control unit 19 and driven and controlled.

支持台16は、台座20と、下端側が台座20に回転自在に取り付けられた回転台21とから構成される。回転台21の上面には、ウエハ14を吸着するための吸着部(図示せず)が形成されており、ウエハ14は、その背面が吸着部に吸着されて回転台21の上面に固定され、回転台21の回転とともに回転する。ノズル17は、ウエハ14に洗浄液を供給するために設けられ、ウエハ14の洗浄時に純水やアンモニア過水(APM)など周知の洗浄液をウエハ14の表面に吹き付ける。   The support base 16 includes a base 20 and a rotary base 21 whose lower end side is rotatably attached to the base 20. An adsorption part (not shown) for adsorbing the wafer 14 is formed on the upper surface of the turntable 21, and the back surface of the wafer 14 is adsorbed by the adsorption part and fixed to the upper surface of the turntable 21. It rotates with the rotation of the turntable 21. The nozzle 17 is provided to supply a cleaning liquid to the wafer 14, and sprays a known cleaning liquid such as pure water or ammonia perwater (APM) onto the surface of the wafer 14 when cleaning the wafer 14.

ブラシ装置18は、ウエハ14の表面に垂直な水平方向に長いアーム22を備えている。アーム22は、その基端部を構成する軸部22aがアーム保持機構24に取り付けられている。そして、アーム保持機構24により、水平面内で回動自在に、かつ、鉛直方向に移動自在に保持される。   The brush device 18 includes an arm 22 that is long in the horizontal direction perpendicular to the surface of the wafer 14. The arm 22 is attached to an arm holding mechanism 24 with a shaft portion 22 a constituting a base end portion thereof. The arm holding mechanism 24 is held so as to be rotatable in a horizontal plane and movable in the vertical direction.

また、アーム22の先端部には、第1、第2の洗浄ヘッド12、13が取り付けられるマウント部30が設けられている。図2に示すように、マウント部30は、第1駆動機構32と、第2駆動機構33とを備え、第1洗浄ヘッド12は第1駆動機構32に、第2洗浄ヘッド13は第2駆動機構33にそれぞれ取り付けられて保持される。   In addition, a mount portion 30 to which the first and second cleaning heads 12 and 13 are attached is provided at the distal end portion of the arm 22. As shown in FIG. 2, the mount unit 30 includes a first drive mechanism 32 and a second drive mechanism 33, the first cleaning head 12 is in the first drive mechanism 32, and the second cleaning head 13 is in the second drive. Each of the mechanisms 33 is attached and held.

第1駆動機構32は、モータ36と、シリンダ38とから構成され、制御部19によって駆動制御される。モータ36は、シャフト36aが第1洗浄ヘッド12に連結されており、シリンダ38はロッド38aがモータ36に連結されている。制御部19は、モータ36を駆動してシャフト36aを回転させることで、第1洗浄ヘッド12を水平面内で回転させる、また、制御部19は、シリンダ38を駆動してロッド38aを上下させることによって、第1洗浄ヘッド12をウエハ14に当接した洗浄位置と、ウエハ14から離間させ、マウント部30に形成された収納部40に収納する待機位置との間で移動させる。   The first drive mechanism 32 includes a motor 36 and a cylinder 38 and is driven and controlled by the control unit 19. The motor 36 has a shaft 36 a connected to the first cleaning head 12, and the cylinder 38 has a rod 38 a connected to the motor 36. The control unit 19 drives the motor 36 to rotate the shaft 36a, thereby rotating the first cleaning head 12 in the horizontal plane. The control unit 19 drives the cylinder 38 to move the rod 38a up and down. Accordingly, the first cleaning head 12 is moved between the cleaning position where the first cleaning head 12 is in contact with the wafer 14 and the standby position where the first cleaning head 12 is separated from the wafer 14 and stored in the storage unit 40 formed in the mount unit 30.

第2駆動機構33は、第1駆動機構32と同様に、モータ42、シリンダ44とから構成され、制御部19によって駆動制御される。そして、制御部19は、モータ42を駆動してシャフト42aを回転させることによって、第2洗浄ヘッド13を水平面内で回転させる。また、制御部19は、シリンダ44を駆動してロッド44aを上下させることで、第2洗浄ヘッド13をウエハ14に当接させた洗浄位置と、ウエハ14から離間させ、マウンド部30に形成された収納部46に収納する待機位置との間で移動させる。   Similar to the first drive mechanism 32, the second drive mechanism 33 includes a motor 42 and a cylinder 44, and is driven and controlled by the control unit 19. And the control part 19 rotates the 2nd washing | cleaning head 13 in a horizontal surface by driving the motor 42 and rotating the shaft 42a. Further, the control unit 19 drives the cylinder 44 to move the rod 44 a up and down, thereby separating the second cleaning head 13 from the cleaning position where the second cleaning head 13 is brought into contact with the wafer 14, and forming the mound 30. It is moved between the standby position for storing in the storage unit 46.

第1洗浄ヘッド12は、円盤形状に形成されたヘッド本体50の上面にシール部52が設けられている。シール部52は、ヘッド本体50と収納室40の内壁との隙間を埋め、パーティクルや洗浄水のマウント部30内への侵入を阻止する機能を有する。また、ヘッド本体50の下面には、第1スポンジブラシ54が設けられている。第1スポンジブラシ54は、例えば、ポリビニルアルコール(PVA)を主成分として構成され、ウエハ14に強固に付着した比較的大きなパーティクル56(図5(A)参照)を除去できるように高剛性に形成されている。   The first cleaning head 12 is provided with a seal portion 52 on the upper surface of a head main body 50 formed in a disk shape. The seal portion 52 has a function of filling a gap between the head main body 50 and the inner wall of the storage chamber 40 and preventing particles and cleaning water from entering the mount portion 30. A first sponge brush 54 is provided on the lower surface of the head body 50. The first sponge brush 54 is composed of, for example, polyvinyl alcohol (PVA) as a main component, and is formed with high rigidity so as to remove relatively large particles 56 (see FIG. 5A) firmly attached to the wafer 14. Has been.

他方、第2洗浄ヘッド13は、円盤形状に形成されたヘッド本体60の上面にシール部62が設けられ、パーティクルや洗浄水がマウント部30内へ侵入しないようになっている。また、ヘッド本体60の下面には、第2スポンジブラシ64が設けられている。第2スポンジブラシ64は、例えば、ポリウレタンを主成分として構成され、ウエハ14の窪みに溜まった比較的小さなパーティクル66(図5(B)参照)を除去できるように低剛性に形成されている。   On the other hand, the second cleaning head 13 is provided with a seal portion 62 on the upper surface of the head body 60 formed in a disk shape so that particles and cleaning water do not enter the mount portion 30. A second sponge brush 64 is provided on the lower surface of the head body 60. The second sponge brush 64 is made of, for example, polyurethane as a main component, and is formed with low rigidity so that relatively small particles 66 (see FIG. 5B) accumulated in the recesses of the wafer 14 can be removed.

また、図3に示すように、第1スポンジブラシ54には、十字形状の切り欠きが設けられ、この切り欠き部分により溝部58が形成されている。さらに、第2スポンジブラシ64には、十字形状の切り欠きが設けられ、この切り欠き部分により溝部68が形成されている。これら溝部58、68は、ウエハ14の洗浄時に、除去されたパーティクルを洗浄ヘッド12、13の外へスムーズに排出させる機能を有する。   Further, as shown in FIG. 3, the first sponge brush 54 is provided with a cross-shaped cutout, and a groove 58 is formed by the cutout portion. Further, the second sponge brush 64 is provided with a cross-shaped cutout, and a groove 68 is formed by the cutout portion. These grooves 58 and 68 have a function of smoothly discharging the removed particles out of the cleaning heads 12 and 13 when the wafer 14 is cleaned.

以下、上記構成のウエハ洗浄装置10の作用について、図4に示すフローチャートをもとに説明をする。ウエハ14の洗浄を行う際は、先ず、ウエハ14が支持台16にセットされる(S10)。続いて、制御部19がアーム22を駆動してマウント部30をウエハ14の上方へ移動させる。   Hereinafter, the operation of the wafer cleaning apparatus 10 configured as described above will be described with reference to the flowchart shown in FIG. When cleaning the wafer 14, first, the wafer 14 is set on the support base 16 (S10). Subsequently, the control unit 19 drives the arm 22 to move the mount unit 30 above the wafer 14.

次に、制御部19は、第1洗浄ヘッド12によりウエハ14の洗浄を行う(S11)。すなわち、制御部19は、第1駆動機構32を駆動して、第2洗浄ヘッド13を待機位置へ移動させるとともに、第1洗浄ヘッド12を洗浄位置へ移動させ、回転させる。洗浄は、ノズル17からウエハ14に対して洗浄液を吹き付けるとともに、支持台16及びアーム22を回動しながら行われる。これにより、ウエハ14の表面全体が第1洗浄ヘッド12によりまんべんなく洗浄される。   Next, the controller 19 cleans the wafer 14 with the first cleaning head 12 (S11). That is, the control unit 19 drives the first drive mechanism 32 to move the second cleaning head 13 to the standby position, and to move the first cleaning head 12 to the cleaning position and rotate it. The cleaning is performed while spraying the cleaning liquid from the nozzle 17 onto the wafer 14 and rotating the support base 16 and the arm 22. Thereby, the entire surface of the wafer 14 is thoroughly cleaned by the first cleaning head 12.

続いて、制御部19は、第2洗浄ヘッド13によりウエハ14の洗浄を行う(S12)。すなわち、制御部19は、第1洗浄ヘッド12を待機位置へ移動させるとともに、第2洗浄ヘッド13を洗浄位置へ移動させ、回転させる。この洗浄もノズル17からウエハ14に対して洗浄液を吹き付けるとともに、支持台16及びアーム22を回動しながら行われ、ウエハ14の表面全体が第2洗浄ヘッド13によりまんべんなく洗浄される。   Subsequently, the control unit 19 cleans the wafer 14 with the second cleaning head 13 (S12). That is, the control unit 19 moves the first cleaning head 12 to the standby position and moves the second cleaning head 13 to the cleaning position and rotates it. This cleaning is also performed while spraying the cleaning liquid from the nozzle 17 to the wafer 14 and rotating the support base 16 and the arm 22, so that the entire surface of the wafer 14 is thoroughly cleaned by the second cleaning head 13.

図5(A)に示すように、第1洗浄ヘッド12に設けられた第1スポンジブラシ54は、剛性が高く変形しづらい。このため、第1洗浄ヘッド12による洗浄では、ウエハ14に強固に付着した比較的大きなパーティクル56が除去される。また、同図(B)に示すように、第2洗浄ヘッド13に設けられた第2スポンジブラシ64は、剛性が低く、ウエハ14の形状に応じて柔軟に変形する。このため、第2洗浄ヘッド13による洗浄では、ウエハ14の窪みに付着した比較的小さなパーティクル66が除去される。   As shown in FIG. 5A, the first sponge brush 54 provided in the first cleaning head 12 has high rigidity and is difficult to deform. For this reason, in the cleaning by the first cleaning head 12, relatively large particles 56 firmly attached to the wafer 14 are removed. Further, as shown in FIG. 5B, the second sponge brush 64 provided in the second cleaning head 13 has low rigidity and is flexibly deformed according to the shape of the wafer 14. For this reason, in the cleaning by the second cleaning head 13, relatively small particles 66 attached to the recess of the wafer 14 are removed.

このように、ウエハ洗浄装置10では、ウエハに強固に付着した比較的大きなパーティクル56と、ウエハの窪みに付着した比較的小さなパーティクル66との両方を除去できる。また、ウエハ洗浄装置10では、第1洗浄ヘッド12と第2洗浄ヘッド13とにそれぞれ溝部58、68を設けたため、除去されたパーティクルを効率よく洗浄ヘッド12、13外へ排出でき、除去されたパーティクルがウエハ14に再付着してしまうこともない。   As described above, the wafer cleaning apparatus 10 can remove both the relatively large particles 56 firmly attached to the wafer and the relatively small particles 66 attached to the recess of the wafer. Further, in the wafer cleaning apparatus 10, since the grooves 58 and 68 are provided in the first cleaning head 12 and the second cleaning head 13, respectively, the removed particles can be efficiently discharged out of the cleaning heads 12 and 13 and removed. The particles do not reattach to the wafer 14.

なお、上記実施形態では、マウント部にスポンジブラシの剛性が異なる2種類の洗浄ヘッドを設ける例で説明をしたが、マウント部にスポンジブラシの剛性が異なる3種類以上のスポンジヘッドを設けてもよい。また、上記実施形態では、洗浄部材としてスポンジブラシを用いる例で説明をしたが、洗浄部材として複数のブラシ毛を備えた刷毛ブラシを用いてもよい。   In the above embodiment, an example in which two types of cleaning heads having different sponge brush rigidity are provided in the mount portion has been described. However, three or more types of sponge heads having different sponge brush rigidity may be provided in the mount portion. . Moreover, although the said embodiment demonstrated the example which uses a sponge brush as a washing | cleaning member, you may use the brush brush provided with the several brush hair as a washing | cleaning member.

さらに、上記実施形態では、第1、第2の洗浄ヘッドに、下面中央部から端部へ向けて直線状に延びる溝部を設ける例で説明をしたが、図6に示す第1、第2の各洗浄ヘッド72、73のように、洗浄ヘッド72、73の下面中央部から端部へ向けて円弧状に延びる溝部74、75を設けてもよい。もちろんこれに限定されず、溝部の有無や溝部の形状は適宜設定すればよい。なお、図6においては、上述した実施形態と同様の部材については同様の符号を付して説明を省略している。   Furthermore, in the above-described embodiment, the first and second cleaning heads have been described with an example in which the groove portion extending linearly from the lower surface center portion to the end portion has been described. However, the first and second cleaning heads shown in FIG. Like each cleaning head 72 and 73, you may provide the groove parts 74 and 75 extended in circular arc shape toward the edge part from the center part of the lower surface of the cleaning heads 72 and 73. Of course, the present invention is not limited to this, and the presence or absence of the groove and the shape of the groove may be set as appropriate. In FIG. 6, members similar to those in the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

ウエハ洗浄装置の外観図である。It is an external view of a wafer cleaning apparatus. マウント部の断面図である。It is sectional drawing of a mount part. マウント部を下方から観察した平面図である。It is the top view which observed the mount part from the lower part. ウエハの洗浄手順を表すフローチャートである。It is a flowchart showing the washing | cleaning procedure of a wafer. パーティクルが除去される様子を表す説明図である。It is explanatory drawing showing a mode that a particle is removed. マウント部を下方から観察した平面図である。It is the top view which observed the mount part from the lower part.

符号の説明Explanation of symbols

10 洗浄装置
12、72 第1洗浄ヘッド
13、73 第2洗浄ヘッド
14 ウエハ
19 制御部
30 マウント部
32 第1駆動機構
33 第2駆動機構
32、64 第1スポンジブラシ
34、66 第2スポンジブラシ
58、68、74、75 溝部
DESCRIPTION OF SYMBOLS 10 Cleaning apparatus 12, 72 1st cleaning head 13, 73 2nd cleaning head 14 Wafer 19 Control part 30 Mount part 32 1st drive mechanism 33 2nd drive mechanism 32, 64 1st sponge brush 34, 66 2nd sponge brush 58 68, 74, 75 Groove

Claims (5)

洗浄液を供給しながらウエハの表面に付着した異物を除去するウエハ洗浄装置において、
柔軟な第1洗浄部材の根本側を固定した第1回転板と、
前記第1洗浄部材よりも柔軟な第2洗浄部材の根本側を固定した第2回転板と、
前記第1、第2の洗浄部材の先端側がともに前記ウエハの表面に略平行となるように、前記ウエハの表面に略平行な方向に前記第1、第2の2つの回転板が並べて取り付けられる回転板支持機構とを備えるとともに、
前記回転板支持機構に、前記第1、第2の洗浄部材の一方を選択的に前記ウエハの表面に接触させるように、前記第1、第2の回転板のそれぞれを前記ウエハの表面に略垂直な方向に移動させる移動機構と、前記一方の洗浄部材が取り付けられた回転板を前記ウエハの表面に略平行な面内で回転させる回転機構とを設けたことを特徴とするウエハ洗浄装置。
In a wafer cleaning apparatus that removes foreign substances adhering to the wafer surface while supplying a cleaning liquid,
A first rotating plate that fixes the base side of the flexible first cleaning member;
A second rotating plate that fixes a base side of the second cleaning member that is more flexible than the first cleaning member;
The first and second rotating plates are mounted side by side in a direction substantially parallel to the surface of the wafer so that the front ends of the first and second cleaning members are both substantially parallel to the surface of the wafer. A rotating plate support mechanism,
Each of the first and second rotating plates is substantially placed on the surface of the wafer so that the rotating plate support mechanism selectively contacts one of the first and second cleaning members with the surface of the wafer. A wafer cleaning apparatus comprising: a moving mechanism for moving in a vertical direction; and a rotating mechanism for rotating a rotating plate on which the one cleaning member is mounted in a plane substantially parallel to the surface of the wafer.
前記移動機構は、前記第1回転板を移動させる第1アクチュエータと、前記第2回転板を移動させる第2アクチュエータとを備え、
前記回転機構は、前記第1回転板を回転させる第1モータと、前記第2回転板を回転させる第2モータとを備えていることを特徴とする請求項1記載のウエハ洗浄装置。
The moving mechanism includes a first actuator that moves the first rotating plate, and a second actuator that moves the second rotating plate,
2. The wafer cleaning apparatus according to claim 1, wherein the rotating mechanism includes a first motor that rotates the first rotating plate and a second motor that rotates the second rotating plate. 3.
前記第1洗浄部材は、前記第1回転板を回転中心から周縁に向かう直線または曲線で区画した領域ごとに分割して配置されるとともに、各領域の境界には隙間が設けられていることを特徴とする請求項1または2記載のウエハ洗浄装置。   The first cleaning member is divided and arranged for each region divided by a straight line or a curve from the rotation center toward the periphery, and a gap is provided at the boundary of each region. 3. A wafer cleaning apparatus according to claim 1, wherein 前記第2洗浄部材は、前記第2回転板を回転中心から周縁に向かう直線または曲線で区画した領域ごとに分割して配置されるとともに、各領域の境界には隙間が設けられていることを特徴とする請求項1〜3いずれか記載のウエハ洗浄装置。   The second cleaning member is divided and arranged for each region divided by a straight line or a curve from the rotation center toward the periphery, and a gap is provided at the boundary of each region. The wafer cleaning apparatus according to any one of claims 1 to 3. 前記第1洗浄部材は、ポリビニルアルコールを主成分として構成され、前記第2洗浄部材は、ポリウレタンを主成分として構成されることを特徴とする請求項1〜4いずれか記載のウエハ洗浄装置。   5. The wafer cleaning apparatus according to claim 1, wherein the first cleaning member includes polyvinyl alcohol as a main component, and the second cleaning member includes polyurethane as a main component.
JP2006199503A 2006-07-21 2006-07-21 Wafer cleaning apparatus Pending JP2008028175A (en)

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JP2009238861A (en) * 2008-03-26 2009-10-15 Dainippon Screen Mfg Co Ltd Substrate treatment device, and substrate treatment method
WO2010033144A1 (en) * 2008-09-17 2010-03-25 Lam Research Corporation Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications
JP2015023248A (en) * 2013-07-23 2015-02-02 東京エレクトロン株式会社 Substrate cleaning apparatus and method, and recording medium
JP2020174144A (en) * 2019-04-11 2020-10-22 井和工業株式会社 Substrate cleaning sponge and manufacturing method therefor

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JPH10308370A (en) * 1997-05-08 1998-11-17 Dainippon Screen Mfg Co Ltd Wafer cleaner
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JPH10256206A (en) * 1997-03-11 1998-09-25 Dainippon Screen Mfg Co Ltd Cleaning tool, substrate cleaning method and substrate cleaning device
JPH10308370A (en) * 1997-05-08 1998-11-17 Dainippon Screen Mfg Co Ltd Wafer cleaner
JP2002066467A (en) * 2000-08-29 2002-03-05 Tokyo Electron Ltd Apparatus and method for washing substrate
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238861A (en) * 2008-03-26 2009-10-15 Dainippon Screen Mfg Co Ltd Substrate treatment device, and substrate treatment method
WO2010033144A1 (en) * 2008-09-17 2010-03-25 Lam Research Corporation Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications
CN102160150A (en) * 2008-09-17 2011-08-17 朗姆研究公司 Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications
JP2015023248A (en) * 2013-07-23 2015-02-02 東京エレクトロン株式会社 Substrate cleaning apparatus and method, and recording medium
JP2020174144A (en) * 2019-04-11 2020-10-22 井和工業株式会社 Substrate cleaning sponge and manufacturing method therefor

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