JP2020174144A - Substrate cleaning sponge and manufacturing method therefor - Google Patents

Substrate cleaning sponge and manufacturing method therefor Download PDF

Info

Publication number
JP2020174144A
JP2020174144A JP2019075835A JP2019075835A JP2020174144A JP 2020174144 A JP2020174144 A JP 2020174144A JP 2019075835 A JP2019075835 A JP 2019075835A JP 2019075835 A JP2019075835 A JP 2019075835A JP 2020174144 A JP2020174144 A JP 2020174144A
Authority
JP
Japan
Prior art keywords
cleaning
sponge
diameter portion
substrate cleaning
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019075835A
Other languages
Japanese (ja)
Inventor
哲彦 小佐見
Tetsuhiko Osami
哲彦 小佐見
和美 藤森
Kazumi Fujimori
和美 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiwa Kogyo KK
Original Assignee
Seiwa Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiwa Kogyo KK filed Critical Seiwa Kogyo KK
Priority to JP2019075835A priority Critical patent/JP2020174144A/en
Publication of JP2020174144A publication Critical patent/JP2020174144A/en
Pending legal-status Critical Current

Links

Images

Abstract

To provide a substrate cleaning sponge which is enhanced in cleaning characteristic and cleaning efficiency, and a method for manufacturing the same.SOLUTION: A substrate cleaning sponge has, as a whole shape, a stepped cylindrical shape composed of a small diameter portion 20 and a large diameter portion 30 continuous with the small diameter portion 20. An end surface 21 of any one of the small diameter portion 20 and the large diameter portion 30 is set as a cleaning surface 40 which slides while an end surface of the other portion is in contact with a cleaning target, and the substrate cleaning sponge has continuous exposed pores at least on the cleaning surface 40, and is formed of resin sponge having a hydrophilic property. On the cleaning surface 40 is formed a cross-shaped groove including two linear grooves 50 that pass through an outer edge 41 and a center 42 of the cleaning surface 40, are substantially orthogonal to each other at the position of the center 42, have both side walls perpendicular to the cleaning surface 40, and have a predetermined depth.SELECTED DRAWING: Figure 1

Description

本発明は、シリコンウェーハやガラス基板など、高度の表面平坦性を求められる被研磨物の洗浄工程において使用される基板洗浄用スポンジおよびその製造方法に関する。 The present invention relates to a substrate cleaning sponge used in a process for cleaning an object to be polished, such as a silicon wafer or a glass substrate, which requires a high degree of surface flatness, and a method for manufacturing the same.

近年、技術の高度化に伴い、より高度な半導体等の生産を効率よく行うことが求められており、その原料となるシリコンウェーハ等の表面を高度に平坦化する技術が求められている。 In recent years, with the advancement of technology, it has been required to efficiently produce more advanced semiconductors and the like, and a technology for highly flattening the surface of a silicon wafer or the like as a raw material thereof is required.

シリコンウェーハやガラス基板など、高度の表面平坦性を求められる被研磨物の研磨方法としては、一般的にケミカルメカニカルポリシング(以下、CMPという)が使用されている。このCMPは、回転可能な定盤に固定した被研磨物と、回転可能かつ移動可能に備えた研磨パッドとを用い、前記被研磨物と前記研磨パッドの間にスラリー(研磨液)を供給し、研磨パッドを被研磨物の表面に接触させたままアームが前後左右方向に移動する動作、回転軸及び定盤が軸回転する動作によって相対的に摺動させることで研磨を行う方法である。これにより、スラリーの有する酸性またはアルカリ性の性質による化学的な作用に加えて、スラリーに含まれる砥粒による機械的な作用を利用して研磨加工を行うものである。 Chemical mechanical polishing (hereinafter referred to as CMP) is generally used as a method for polishing an object to be polished, such as a silicon wafer or a glass substrate, which requires a high degree of surface flatness. This CMP uses an object to be polished fixed to a rotatable surface plate and a polishing pad provided to be rotatable and movable, and supplies a slurry (polishing liquid) between the object to be polished and the polishing pad. This is a method of polishing by relatively sliding the arm in the front-back and left-right directions while keeping the polishing pad in contact with the surface of the object to be polished, and the operation of rotating the axis and the surface plate. As a result, in addition to the chemical action due to the acidic or alkaline properties of the slurry, the polishing process is performed by utilizing the mechanical action of the abrasive grains contained in the slurry.

そして、CMPによる研磨工程が終了したら、被研磨物の表面に残留するスラリーや研磨屑などの異物を洗浄するための洗浄工程が実施される(以下、被研磨物を被洗浄物と称する)。 Then, when the polishing step by CMP is completed, a cleaning step for cleaning foreign substances such as slurry and polishing debris remaining on the surface of the object to be polished is carried out (hereinafter, the object to be polished is referred to as an object to be polished).

この際、例えば特開平9−134896号公報(特許文献1)または特開平10−92780号公報(特許文献2)に記載されているように、回転可能な円筒形のスポンジを用い、被洗浄物の表面に前記スポンジの洗浄面を接触させ、洗浄液を前記被洗浄物と前記スポンジの間に供給しつつ前記被洗浄物および前記スポンジを回転させることで相対的に移動させて前記被洗浄物の表面に残留する異物を除去する方法が一般的に知られている。 At this time, for example, as described in JP-A-9-134896 (Patent Document 1) or JP-A-10-92780 (Patent Document 2), a rotatable cylindrical sponge is used to be cleaned. The cleaning surface of the sponge is brought into contact with the surface of the sponge, and the cleaning liquid is supplied between the object to be cleaned and the sponge while the object to be cleaned and the sponge are rotated to relatively move the object to be cleaned. A method for removing foreign matter remaining on the surface is generally known.

具体的には、この洗浄方法は図9に示すように、アーム1の先端に回転軸2を介して備えられたホルダー3に装着した基板洗浄用スポンジSを用いて、回転可能な定盤4に固定した被洗浄物Bに対して、基板洗浄用スポンジSと被洗浄物Bの表面5との間に洗浄液Rを供給し、基板洗浄用スポンジSを被洗浄物Bの表面5に接触させたままアーム2が前後左右方向に移動する動作、回転軸2及び定盤4が軸回転する動作によって相対的に摺動させることで被洗浄物Bの表面5に残留するスラリーや研磨屑などの異物を洗い流して洗浄を行う方法である。 Specifically, as shown in FIG. 9, this cleaning method uses a substrate cleaning sponge S attached to a holder 3 provided at the tip of the arm 1 via a rotating shaft 2, and a rotatable platen 4 The cleaning liquid R is supplied between the substrate cleaning sponge S and the surface 5 of the object B to be cleaned, and the substrate cleaning sponge S is brought into contact with the surface 5 of the object B to be cleaned. Sponge, polishing debris, etc. remaining on the surface 5 of the object to be cleaned B are removed by relatively sliding the arm 2 in the front-back and left-right directions and the rotation shaft 2 and the platen 4 in the axial rotation. This is a method of washing away foreign substances.

このとき、洗浄特性および洗浄効率を向上させるためには、基板洗浄用スポンジ自体が均一に被洗浄物に接触することが重要である。また、新たな洗浄液を均一に供給するとともに使用済の洗浄液を効率よく排出させる必要がある。 At this time, in order to improve the cleaning characteristics and the cleaning efficiency, it is important that the substrate cleaning sponge itself comes into uniform contact with the object to be cleaned. In addition, it is necessary to uniformly supply new cleaning liquid and efficiently discharge used cleaning liquid.

そこで、洗浄特性および洗浄効率の向上を可能とする基板洗浄用スポンジが求められていた。 Therefore, there has been a demand for a substrate cleaning sponge capable of improving cleaning characteristics and cleaning efficiency.

特開平9−134896号公報Japanese Unexamined Patent Publication No. 9-134896 特開平10−92780号公報Japanese Unexamined Patent Publication No. 10-92780

本発明は、洗浄特性および洗浄効率を向上させた基板洗浄用スポンジおよびその製造方法を提供することを課題とする。 An object of the present invention is to provide a substrate cleaning sponge having improved cleaning characteristics and cleaning efficiency, and a method for producing the same.

前記課題を解決するためになされた本発明は、全体が小径部及び該小径部に連続する大径部からなる段付円柱形を呈し、前記小径部または前記大径部のいずれか一方の端面を被洗浄物に接触させたまま摺動する洗浄面とする少なくとも前記洗浄面において露出する連続気孔を有するとともに親水性を有する樹脂スポンジにより形成されている基板洗浄用スポンジであって、前記洗浄面に、前記洗浄面の外縁及び中心を通過するとともに前記中心の位置で互いに略直交して、両側壁が前記洗浄面と直角で所定深さを有する直線状である2本の溝からなる十字溝が形成されていることを特徴とする。 The present invention made to solve the above problems has a stepped columnar shape having a small diameter portion and a large diameter portion continuous with the small diameter portion, and has an end surface of either the small diameter portion or the large diameter portion. Is a substrate cleaning sponge formed of a resin sponge having continuous pores exposed at least on the cleaning surface and having hydrophilicity, which is a cleaning surface that slides while being in contact with the object to be cleaned. A cross groove consisting of two linear grooves that pass through the outer edge and center of the cleaning surface and are substantially orthogonal to each other at the center position, and both side walls are perpendicular to the cleaning surface and have a predetermined depth. Is formed.

また、前記樹脂スポンジが、ポリビニルアルコールスポンジ(PVAスポンジ)である場合、このPVAスポンジは連続気孔を有する立体網目構造の親水性を有する樹脂スポンジであり、吸水性及び保水性に富み、且つ耐薬品性および耐摩耗性に優れた特徴を有する基板洗浄用スポンジとすることができる。 When the resin sponge is a polyvinyl alcohol sponge (PVA sponge), the PVA sponge is a resin sponge having a three-dimensional network structure having continuous pores and having hydrophilicity, and is rich in water absorption and water retention and chemical resistance. It can be a substrate cleaning sponge having excellent properties and abrasion resistance.

更に、前記樹脂スポンジは平均気孔径80μm〜180μmであることが望ましい。 Further, it is desirable that the resin sponge has an average pore diameter of 80 μm to 180 μm.

また、基板洗浄用スポンジを製造する方法は、以下の工程を有することを特徴とする。
1.水または使用する洗浄液により膨潤させた樹脂スポンジのブロック体の外周を切削加工することで小径部及び大径部を形成する。
2.前記小径部または前記大径部のいずれか一方の端面を切削加工して十字溝を形成することで洗浄面を形成する。
Further, the method for producing a substrate cleaning sponge is characterized by having the following steps.
1. 1. A small diameter portion and a large diameter portion are formed by cutting the outer periphery of the block body of the resin sponge swollen with water or the cleaning liquid to be used.
2. A cleaning surface is formed by cutting the end surface of either the small diameter portion or the large diameter portion to form a cross groove.

本発明の基板洗浄用スポンジによれば、全体を単一の樹脂連続気孔体により構成したことで、気孔によって一定の圧力を吸収することで洗浄面全体を均一に被洗浄面に接触させることができる点や、洗浄面に露出した気孔によって異物等を効率よく捕集することができる点において優れるのみならず、洗浄面にエッジが直角となる十字溝を形成したことによって、従来の溝を形成しない基板洗浄用スポンジや、直角以外の溝を形成した基板洗浄用スポンジに比較して各段に洗浄特性および洗浄効率を向上させたのみならず加工も容易としており、製造上の利点も有するものである。 According to the substrate cleaning sponge of the present invention, since the whole is composed of a single resin continuous pore body, the entire cleaning surface can be uniformly brought into contact with the surface to be cleaned by absorbing a certain pressure by the pores. Not only is it excellent in that it can be made and that foreign matter can be efficiently collected by the pores exposed on the cleaning surface, but also a conventional groove is formed by forming a cross groove whose edge is perpendicular to the cleaning surface. Compared to a substrate cleaning sponge that does not have a right angle and a substrate cleaning sponge that has grooves other than right angles, it not only improves cleaning characteristics and cleaning efficiency at each stage, but also facilitates processing and has manufacturing advantages. Is.

本発明の好ましい実施の形態を示す(a)斜視図、(b)平面図、(c)A−A線断面図。(A) perspective view, (b) plan view, and (c) AA line sectional view showing a preferred embodiment of the present invention. 図1(c)を更に拡大した図。FIG. 1 (c) is a further enlarged view. 図1に示した基板洗浄用スポンジの製造工程を示す説明図。The explanatory view which shows the manufacturing process of the substrate cleaning sponge shown in FIG. 本発明の異なる実施の形態を示す(a)斜視図、(b)平面図、(c)A−A線断面図。(A) perspective view, (b) plan view, and (c) AA line sectional view showing different embodiments of the present invention. 図1に示した実施の形態における使用状態を示す要部拡大断面図。An enlarged cross-sectional view of a main part showing a usage state in the embodiment shown in FIG. 図1に示した基盤洗浄用スポンジ(本願発明)と、溝を形成しない基板洗浄用スポンジ(比較例1)と、溝を格子状に形成した基板洗浄用スポンジ(比較例2)とを示す斜視図および平面図の一覧表。A perspective showing a substrate cleaning sponge (invention of the present application) shown in FIG. 1, a substrate cleaning sponge having no grooves (Comparative Example 1), and a substrate cleaning sponge having grooves formed in a grid pattern (Comparative Example 2). List of figures and plan views. 図1に示した基板洗浄用スポンジおよび比較例1,比較例2の基板洗浄用スポンジを洗浄工程に用いた際の洗浄前後の残留パーティクル数を示す表。A table showing the number of residual particles before and after cleaning when the substrate cleaning sponge shown in FIG. 1 and the substrate cleaning sponges of Comparative Examples 1 and 2 are used in the cleaning step. 異なる比較例を示す断面図であり、(a)は溝が洗浄面に対し鈍角である基板洗浄用スポンジ、(b)は溝が洗浄面に対し鋭角である基板洗浄用スポンジである。It is sectional drawing which shows a different comparative example, (a) is a substrate cleaning sponge whose groove is an obtuse angle with respect to a cleaning surface, (b) is a substrate cleaning sponge whose groove is an acute angle with respect to a cleaning surface. 従来の洗浄装置を示す図。The figure which shows the conventional cleaning apparatus.

以下に、本発明の好ましい実施の形態について図面を参照して詳細に説明する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

図1は本発明である基板洗浄用スポンジ10Aを示す図であり、この図に示すように、基板洗浄用スポンジ10Aは小径部20及び小径部20に連続する大径部30からなる段付円柱形である。 FIG. 1 is a diagram showing a substrate cleaning sponge 10A of the present invention. As shown in this figure, the substrate cleaning sponge 10A is a stepped cylinder composed of a small diameter portion 20 and a large diameter portion 30 continuous with the small diameter portion 20. It is a shape.

小径部20の端面21に被洗浄物Bに摺動する洗浄面40を備えており、洗浄面40にはその外縁41及び中心42を通過するとともに前記中心42の位置で互いに略直交する直線状の2本の溝50,50による十字溝が形成されている。 The end surface 21 of the small diameter portion 20 is provided with a cleaning surface 40 that slides on the object to be cleaned B, and the cleaning surface 40 is a linear shape that passes through the outer edge 41 and the center 42 and is substantially orthogonal to each other at the position of the center 42. A cross groove is formed by the two grooves 50 and 50.

溝50は洗浄面40から所定の深さだけ切削加工することにより形成されており、溝50の両側壁51,51は洗浄面40に対し直角になっている。 The groove 50 is formed by cutting a predetermined depth from the cleaning surface 40, and the side walls 51 and 51 of the groove 50 are perpendicular to the cleaning surface 40.

溝50の深さH1は小径部20の高さH2の半分程度であることが望ましいが、特にこれに限るものではなく、小径部20の高さH2を上限として任意に設定することができる(図2参照)。 The depth H1 of the groove 50 is preferably about half of the height H2 of the small diameter portion 20, but is not particularly limited to this, and can be arbitrarily set with the height H2 of the small diameter portion 20 as the upper limit ( See FIG. 2).

溝50の幅W1は小径部20の幅W2に対して10%〜20%の範囲であることが望ましい(図2参照)。 The width W1 of the groove 50 is preferably in the range of 10% to 20% with respect to the width W2 of the small diameter portion 20 (see FIG. 2).

基板洗浄用スポンジ10Aは、前記洗浄面40において露出する連続気孔を有する樹脂スポンジにより全体が形成されており、前記樹脂スポンジとして本実施の形態ではポリビニルアルコールスポンジ(以下、PVAスポンジという)を使用している。 The substrate cleaning sponge 10A is entirely formed of a resin sponge having continuous pores exposed on the cleaning surface 40, and a polyvinyl alcohol sponge (hereinafter referred to as PVA sponge) is used as the resin sponge in the present embodiment. ing.

PVAスポンジは連続気孔を有する立体網目構造の親水性を有する樹脂スポンジであり、吸水性及び保水性に富み、且つ耐薬品性および耐摩耗性に優れた特徴を有するため、基板洗浄用スポンジとして用いた際に非常に適した素材であるが、例えばPVAスポンジ以外のポリビニル系樹脂連続気孔体その他の樹脂スポンジを用いてもよい。 PVA sponge is a resin sponge having a three-dimensional network structure with continuous pores and having hydrophilicity. It is rich in water absorption and water retention, and has excellent chemical resistance and abrasion resistance, so it is used as a sponge for cleaning substrates. Although it is a very suitable material, for example, a polyvinyl-based resin continuous pore body other than the PVA sponge or other resin sponge may be used.

PVAスポンジは、例えばアイオン株式会社製のベルイーターD(D)またはベルイーターY(D)が使用可能であり、その基本物性は下記表1の通りである。 As the PVA sponge, for example, Belle Eater D (D) or Belle Eater Y (D) manufactured by Aion Co., Ltd. can be used, and the basic physical properties thereof are as shown in Table 1 below.

Figure 2020174144
Figure 2020174144

基板洗浄用スポンジ10Aを製造する際の工程は以下の通りである。 The process for manufacturing the substrate cleaning sponge 10A is as follows.

まず、樹脂スポンジを長尺円柱状に成型した後に所定の幅にスライスしてブロック体11を形成する(図3(a)参照)。 First, the resin sponge is molded into a long columnar shape and then sliced to a predetermined width to form the block body 11 (see FIG. 3A).

次に、前記ブロック体11の外周を切削加工することで前記小径部20A及び前記大径部30Aを形成する(図3(b)参照)。 Next, the small diameter portion 20A and the large diameter portion 30A are formed by cutting the outer periphery of the block body 11 (see FIG. 3B).

そして、前記小径部20Aの端面21を切削加工して前記十字溝を形成することで前記洗浄面40を形成する(図3(c)参照)。 Then, the cleaning surface 40 is formed by cutting the end surface 21 of the small diameter portion 20A to form the cross groove (see FIG. 3C).

上記工程は、樹脂スポンジに液体を含侵させたウェット状態で加工することによって、実際に洗浄工程で使用される際の寸法に合わせて成形することが可能であるため特に望ましい。含侵させる液体は、水または使用する洗浄液が使用可能である。 The above step is particularly desirable because it is possible to mold the resin sponge according to the dimensions when it is actually used in the cleaning step by processing it in a wet state in which a liquid is impregnated. As the liquid to be impregnated, water or the cleaning liquid to be used can be used.

このように、長尺円柱状の樹脂スポンジの全面を切削して基板洗浄用スポンジ10Aを成形することで、長尺円柱状に成型した際に型表面のテクスチャが転写され連続気泡が埋没した状態から、連続気孔を表面に露出させることを容易に実現できる。 In this way, by cutting the entire surface of the long columnar resin sponge to form the substrate cleaning sponge 10A, the texture of the mold surface is transferred and open cells are buried when the long columnar resin sponge is molded. Therefore, it is possible to easily expose the continuous pores to the surface.

図4は本発明の異なる実施の形態の基板洗浄用スポンジ10Bを示す図であり、図1に示した基板洗浄用スポンジ10Aと同様に、基板洗浄用スポンジ10Bは小径部20及び小径部20に連続する大径部30からなる段付円柱形である。 FIG. 4 is a diagram showing a substrate cleaning sponge 10B according to a different embodiment of the present invention. Similar to the substrate cleaning sponge 10A shown in FIG. 1, the substrate cleaning sponge 10B has a small diameter portion 20 and a small diameter portion 20. It is a stepped columnar shape composed of continuous large-diameter portions 30.

この基板洗浄用スポンジ10Bは、大径部30の端面31に被洗浄物Bに摺動する洗浄面40を備えている点において前記図1に示した基板洗浄用スポンジ10Aと異なり、洗浄面40にはその外縁41及び中心42を通過するとともに前記中心の位置で互いに略直交しており、両側壁51,51が前記洗浄面40と直角である直線状の2本の溝50,50による十字溝が形成されている。 The substrate cleaning sponge 10B is different from the substrate cleaning sponge 10A shown in FIG. 1 in that the end surface 31 of the large-diameter portion 30 is provided with a cleaning surface 40 that slides on the object to be cleaned B. Is a cross formed by two linear grooves 50, 50 that pass through the outer edge 41 and the center 42 and are substantially orthogonal to each other at the center position, and the side walls 51, 51 are perpendicular to the cleaning surface 40. A groove is formed.

図1に示した基板洗浄用スポンジ10Aおよび図4に示した基板洗浄用スポンジ10Bは、装着する機器に適した形状に応じ使い分けられるものであって、その機能についてはほぼ同等であるため、以降本明細書においては図1に示した基板洗浄用スポンジ10Aについて説明する。 The substrate cleaning sponge 10A shown in FIG. 1 and the substrate cleaning sponge 10B shown in FIG. 4 are used properly according to the shape suitable for the device to be mounted, and their functions are almost the same. In this specification, the substrate cleaning sponge 10A shown in FIG. 1 will be described.

図5は前記図7に示した従来の洗浄装置に基板洗浄用スポンジとして前記図1に示した基板洗浄用スポンジ10Aを用いた使用状態を示す要部拡大断面図であり、前記図7と同一構成の箇所については同一の符号を付する。 FIG. 5 is an enlarged cross-sectional view of a main part showing a usage state in which the substrate cleaning sponge 10A shown in FIG. 1 is used as the substrate cleaning sponge in the conventional cleaning apparatus shown in FIG. 7, and is the same as FIG. The same reference numerals are given to the parts of the configuration.

図5(b)に示すように、供給された洗浄液Rは回転および移動する基板洗浄用スポンジ10Aの溝50の内部を案内されつつ、被洗浄物Bの表面5を洗浄した後に被洗浄物Bの外へ排出されるが、基板洗浄用スポンジ10Aは溝50を洗浄面40に対し直角に形成していることによって、エッジ部52がスクレーパーのごとく洗浄液Rや異物等を案内することができるとともに、直線状の溝であることから切削工具による加工も容易となる。 As shown in FIG. 5B, the supplied cleaning liquid R is guided inside the groove 50 of the rotating and moving substrate cleaning sponge 10A, and after cleaning the surface 5 of the object to be cleaned B, the object to be cleaned B The substrate cleaning sponge 10A has a groove 50 formed at a right angle to the cleaning surface 40, so that the edge portion 52 can guide the cleaning liquid R, foreign matter, etc. like a scraper. Since it is a linear groove, it can be easily machined with a cutting tool.

図6は基盤洗浄用スポンジ10A(本願発明)と、洗浄面に溝を形成しない基板洗浄用スポンジ10C(比較例1)と、洗浄面に溝を格子状に形成した基板洗浄用スポンジ10D(比較例2)とを示す表である。 FIG. 6 shows a substrate cleaning sponge 10A (invention of the present application), a substrate cleaning sponge 10C having no grooves formed on the cleaning surface (Comparative Example 1), and a substrate cleaning sponge 10D having grooves formed in a grid pattern on the cleaning surface (comparison). It is a table which shows Example 2).

図7は基盤洗浄用スポンジ10A(本願発明),基板洗浄用スポンジ10C(比較例1),基板洗浄用スポンジ10D(比較例2)を用いてそれぞれシリコンウェーハの洗浄工程を行った際の洗浄前後の残留パーティクル数および洗浄後の除去率を示す表である。なお、項目名の「0.1up」は0.1ミクロン以上のパーティクルの数を、「0.15up」は0.15ミクロン以上のパーティクルの数を示す欄である。 FIG. 7 shows before and after cleaning of a silicon wafer using a substrate cleaning sponge 10A (invention of the present application), a substrate cleaning sponge 10C (Comparative Example 1), and a substrate cleaning sponge 10D (Comparative Example 2). It is a table which shows the number of residual particles and the removal rate after cleaning. The item name "0.1up" is a column indicating the number of particles of 0.1 micron or more, and "0.15up" is a column indicating the number of particles of 0.15 micron or more.

前記図7に示す通り、溝を形成しない比較例1の基板洗浄用スポンジ10Cは従来一般的に用いられてきたが、その洗浄性能は十分とは言い難く、0.15ミクロン以上のパーティクル除去率が約77%(1回目),約80%(2回目)であり、約2割の0.15ミクロン以上のパーティクルは残留してしまう。 As shown in FIG. 7, the substrate cleaning sponge 10C of Comparative Example 1 which does not form a groove has been generally used in the past, but its cleaning performance is not sufficient, and the particle removal rate of 0.15 micron or more. Is about 77% (first time) and about 80% (second time), and about 20% of the particles of 0.15 micron or more remain.

更に、0.1ミクロン以上のパーティクル除去率が約45%(1回目),約52%(2回目)であることから、0.1ミクロン以上のパーティクルはほぼ半分が残留してしまうこととなる。 Furthermore, since the particle removal rate of 0.1 micron or more is about 45% (first time) and about 52% (second time), almost half of the particles of 0.1 micron or more remain. ..

これに対し、本願発明の基盤洗浄用スポンジ10Aは0.15ミクロン以上のパーティクル除去率が99.64%(1回目),99.21%(2回目)であり、比較例1をはるかに凌駕する洗浄性能を発揮する。更に、0.1ミクロン以上のパーティクル除去率が98%以上であることが示されており、極微細な異物に対しても非常に有効な洗浄性能を発揮することが明らかである。 On the other hand, the substrate cleaning sponge 10A of the present invention has a particle removal rate of 0.15 micron or more of 99.64% (first time) and 99.21% (second time), which far surpasses Comparative Example 1. Demonstrate cleaning performance. Furthermore, it has been shown that the particle removal rate of 0.1 micron or more is 98% or more, and it is clear that the cleaning performance is very effective even for extremely fine foreign substances.

なお、格子状の溝を形成した比較例2は、比較例1よりも良好な洗浄性能を発揮するが、本願発明が0.1ミクロン以上のパーティクル除去率が98%以上であるのに対し、比較例2は85%程度であるため大きな開きがあり、洗浄性能は十分とは言えない。この理由としては、溝の本数が多すぎることで基盤洗浄用スポンジの内部と外部を行き交う洗浄液の流れが乱れ、使用後の洗浄液がうまく排出されないことなどが原因と推測される。 Comparative Example 2 in which the grid-like grooves are formed exhibits better cleaning performance than Comparative Example 1, but the particle removal rate of 0.1 micron or more is 98% or more in the present invention. Since Comparative Example 2 is about 85%, there is a large difference, and it cannot be said that the cleaning performance is sufficient. It is presumed that the reason for this is that the number of grooves is too large, the flow of the cleaning liquid flowing between the inside and the outside of the base cleaning sponge is disturbed, and the cleaning liquid after use is not discharged well.

図8は異なる比較例を示す断面図であり、図8(a)に示した基板洗浄用スポンジ10Eのように溝50Eを洗浄面40に対し鈍角に形成した場合、前記図1に示した基板洗浄用スポンジ10Aと比較してエッジ部がスクレーパーのごとく作用するエッジ効果が少ないとともに、溝50Eの容積が減少するため、洗浄液Rを保持できる量が減少してしまう。また、図8(b)に示した基板洗浄用スポンジ10Fのように溝50Fを洗浄面40に対し鋭角に形成した場合、前記図1に示した基板洗浄用スポンジ10Aと比較してエッジ効果は増すものの、溝10Fの奥へと向かう洗浄液Rの流れが出来てしまうため、洗浄液Rの更新がスムーズではなく、更にアリ溝状になるため加工が困難となる。 FIG. 8 is a cross-sectional view showing a different comparative example, and when the groove 50E is formed at an obtuse angle with respect to the cleaning surface 40 as in the substrate cleaning sponge 10E shown in FIG. 8A, the substrate shown in FIG. 1 Compared with the cleaning sponge 10A, the edge portion acts like a scraper less, and the volume of the groove 50E is reduced, so that the amount of the cleaning liquid R that can be retained is reduced. Further, when the groove 50F is formed at a sharp angle with respect to the cleaning surface 40 as in the substrate cleaning sponge 10F shown in FIG. 8B, the edge effect is higher than that of the substrate cleaning sponge 10A shown in FIG. Although the number increases, the cleaning liquid R flows toward the back of the groove 10F, so that the cleaning liquid R is not updated smoothly, and the groove shape is further formed, which makes processing difficult.

以上のように、本発明の基板洗浄用スポンジによれば、基板洗浄用スポンジを構成するPVAスポンジは連続気孔を有する立体網目構造の樹脂連続気孔体であり、且つ全体を切削加工することにより形成したことで、気孔によって一定の圧力を吸収して洗浄面全体を均一に被洗浄面に接触させることができるのみならず、洗浄面に露出した連続気孔に洗浄液や異物を保持・更新することができるため、より効率的な洗浄ができる。 As described above, according to the substrate cleaning sponge of the present invention, the PVA sponge constituting the substrate cleaning sponge is a resin continuous pore body having a three-dimensional network structure having continuous pores, and is formed by cutting the whole. As a result, not only is it possible to absorb a certain amount of pressure through the pores and bring the entire cleaning surface into uniform contact with the surface to be cleaned, but also to retain and renew the cleaning liquid and foreign matter in the continuous pores exposed on the cleaning surface. Therefore, more efficient cleaning can be performed.

1 アーム、2 回転軸、3 ホルダー、4 定盤、5 表面、10A,10B,10C,10D 基板洗浄用スポンジ、11 ブロック体、20 小径部、21 端面、30 大径部、31 端面、40 洗浄面、41 外縁、42 中心、50,50C,50D 溝、51 側壁、52 エッジ部、B 被洗浄物、S 基板洗浄用スポンジ、R 洗浄液、H1 溝の深さ、H2 小径部の高さ、W1 溝の幅、W2 小径部の幅 1 arm, 2 rotating shaft, 3 holder, 4 surface plate, 5 surface, 10A, 10B, 10C, 10D Substrate cleaning sponge, 11 block body, 20 small diameter part, 21 end face, 30 large diameter part, 31 end face, 40 cleaning Surface, 41 outer edge, 42 center, 50, 50C, 50D groove, 51 side wall, 52 edge part, B object to be cleaned, S sponge for cleaning substrate, R cleaning liquid, H1 groove depth, H2 small diameter part height, W1 Groove width, W2 small diameter part width

Claims (4)

全体が小径部及び該小径部に連続する大径部からなる段付円柱形を呈し、前記小径部または前記大径部のいずれか一方の端面を被洗浄物に接触させたまま摺動する洗浄面とする少なくとも前記洗浄面において露出する連続気孔を有するとともに親水性を有する樹脂スポンジにより形成されている基板洗浄用スポンジであって、
前記洗浄面に、前記洗浄面の外縁及び中心を通過するとともに前記中心の位置で互いに略直交して、両側壁が前記洗浄面と直角で所定深さを有する直線状である2本の溝からなる十字溝が形成されていることを特徴とする基板洗浄用スポンジ。
Cleaning that has a stepped columnar shape as a whole consisting of a small diameter portion and a large diameter portion continuous with the small diameter portion, and slides while the end surface of either the small diameter portion or the large diameter portion is in contact with the object to be cleaned. A substrate cleaning sponge formed of a resin sponge having continuous pores exposed at least on the cleaning surface and having hydrophilicity.
From two grooves that pass through the outer edge and center of the cleaning surface and are substantially orthogonal to each other at the center position, and both side walls are at right angles to the cleaning surface and have a predetermined depth. A sponge for cleaning a substrate, characterized in that a cross groove is formed.
前記樹脂スポンジが、ポリビニルアルコールスポンジ(PVAスポンジ)であることを特徴とする請求項1記載の基板洗浄用スポンジ。 The substrate cleaning sponge according to claim 1, wherein the resin sponge is a polyvinyl alcohol sponge (PVA sponge). 前記樹脂スポンジが、平均気孔径80μm〜180μmであることを特徴とする請求項1または2記載の基板洗浄用スポンジ。 The substrate cleaning sponge according to claim 1 or 2, wherein the resin sponge has an average pore diameter of 80 μm to 180 μm. 前記請求項1,2または3記載の基板洗浄用スポンジを製造する方法であって、以下の工程を有することを特徴とする基板洗浄用スポンジの製造方法。
1.水または使用する洗浄液により膨潤させた樹脂スポンジのブロック体の外周を切削加工することで小径部及び大径部を形成する。
2.前記小径部または前記大径部のいずれか一方の端面を切削加工して十字溝を形成することで洗浄面を形成する。
The method for producing a substrate cleaning sponge according to any one of claims 1, 2 or 3, wherein the method for producing a substrate cleaning sponge includes the following steps.
1. 1. A small diameter portion and a large diameter portion are formed by cutting the outer periphery of the block body of the resin sponge swollen with water or the cleaning liquid to be used.
2. A cleaning surface is formed by cutting the end surface of either the small diameter portion or the large diameter portion to form a cross groove.
JP2019075835A 2019-04-11 2019-04-11 Substrate cleaning sponge and manufacturing method therefor Pending JP2020174144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019075835A JP2020174144A (en) 2019-04-11 2019-04-11 Substrate cleaning sponge and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019075835A JP2020174144A (en) 2019-04-11 2019-04-11 Substrate cleaning sponge and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JP2020174144A true JP2020174144A (en) 2020-10-22

Family

ID=72831840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019075835A Pending JP2020174144A (en) 2019-04-11 2019-04-11 Substrate cleaning sponge and manufacturing method therefor

Country Status (1)

Country Link
JP (1) JP2020174144A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09134896A (en) * 1995-11-08 1997-05-20 Fujitsu Ltd Device and method for cleaning substrate
JP2004273530A (en) * 2003-03-05 2004-09-30 Nec Kyushu Ltd Washing device and method therefor
JP2008028175A (en) * 2006-07-21 2008-02-07 Fujifilm Corp Wafer cleaning apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09134896A (en) * 1995-11-08 1997-05-20 Fujitsu Ltd Device and method for cleaning substrate
JP2004273530A (en) * 2003-03-05 2004-09-30 Nec Kyushu Ltd Washing device and method therefor
JP2008028175A (en) * 2006-07-21 2008-02-07 Fujifilm Corp Wafer cleaning apparatus

Similar Documents

Publication Publication Date Title
CN1583842A (en) Porous polyurethane polishing pads
KR102347711B1 (en) Polishing pads and systems and methods of making and using the same
KR101158137B1 (en) Methods and materials for making a monolithic porous pad cast onto a rotatable base
CN101905448B (en) Polishing pad for chemical mechanical planarization and manufacturing method thereof
TWI453812B (en) Chemical mechanical polishing pad with controlled wetting
EP3961675A1 (en) Printed chemical mechanical polishing pad
EP3359335A1 (en) Polishing pads and systems and methods of making and using the same
TW200526357A (en) Polishing pad with recessed window
KR101420900B1 (en) Cmp apparatuses with polishing assemblies that provide for the passive removal of slurry
US11424138B2 (en) Substrate cleaning tool, substrate cleaning apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate cleaning tool
CN107398779A (en) A kind of final polishing method of wafer
TW200400866A (en) Composite conditioning disk
US11413722B2 (en) Apparatus and method for chemically mechanically polishing
US6726541B2 (en) Cleaning sheet
US20020129834A1 (en) Pad for use in a critical environment
JP2020174144A (en) Substrate cleaning sponge and manufacturing method therefor
KR101237740B1 (en) Method for Manufacturing a High-functional Pad Conditioner for Chemical Mechanical Planarization and High-functional Pad Conditioner produced thereby
JP2020529332A (en) Fine replication polished surface with improved flatness
TW201515816A (en) Production method of mold of column shape for nano-imprint and production method of reproducible mold for nano-imprint
JP2009023018A (en) Chemical machine polishing pad and method
US20160056060A1 (en) Cleaning member, cleaning apparatus, and cleaning method
JP2003243343A (en) POLISHING METHOD AND DEVICE FOR GaAs WAFER
JP2014193518A (en) Abrasive pad production method
JP2015111487A (en) Manufacturing method of glass substrate
KR100666726B1 (en) CMP Process Conditioner and methods for polishing using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220913

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20221110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230418

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20231010