JPH10154686A - Method of cleaning semiconductor substrate processing device - Google Patents

Method of cleaning semiconductor substrate processing device

Info

Publication number
JPH10154686A
JPH10154686A JP31153596A JP31153596A JPH10154686A JP H10154686 A JPH10154686 A JP H10154686A JP 31153596 A JP31153596 A JP 31153596A JP 31153596 A JP31153596 A JP 31153596A JP H10154686 A JPH10154686 A JP H10154686A
Authority
JP
Japan
Prior art keywords
wafer
adhesive
adhesive tape
substrate processing
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31153596A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Shioyama
善之 塩山
Mikiko Hori
幹子 堀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP31153596A priority Critical patent/JPH10154686A/en
Publication of JPH10154686A publication Critical patent/JPH10154686A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To effectively remove foreign matters from a semiconductor substrate processing device without deteriorating it in operating efficiency by a method wherein a substrate to which self-adhesive material is fixed is transferred. SOLUTION: Self-adhesive materials 101, 104, and 105 are pasted on the primary surface, backside, and sides of a semiconductor wafer 103 so as to cover the wafer's wide area which comes into contact with a semiconductor processing device in transit. A double-sided adhesive tape releasing non-adhesive protrudent thin film 102 is fixed to the adhesive tape 101. A tape is replaced with a new one through such a manner that the non-adhesive thin film 102 is pulled to separate the adhesive tape 101 from the wafer 103, a new adhesive tape 101 is pasted in place of an old one, and reuse is realized. By this setup, a dummy wafer is deteriorated in foreign matter removing capacity with a decrease in cleanness as foreign matter deposited on the dummy wafer is increased in amount, but the dummy wafer is capable of easily recovering its original cleanness and being enhanced in foreign matter removing capability.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、装置のクリーニン
グに関し、例えば半導体製造装置及び半導体検査装置
等、基板処理装置のクリーニング方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to apparatus cleaning, and more particularly, to a method of cleaning a substrate processing apparatus such as a semiconductor manufacturing apparatus and a semiconductor inspection apparatus.

【0002】[0002]

【従来の技術】基板処理装置は、各処理部の間が図8の
様な(A)ベルト式,(B)ローラ式,(C)メカニカ
ル式等の搬送系で連結されており、各搬送系は基板を、
物理的に接触することにより搬送する。その際、基板に
異物が付着していると、その異物が搬送系を構成してい
るベルト801や搬送アーム806に付着し、異物が溜
まって発塵の原因になる。そして、後続の基板に対する
逆汚染つまり再付着する事があり、それが高い清浄度を
必要とされる基板であった場合に、歩留り上致命的な欠
陥を生じさせる原因にもなりかねなかった。この悪影響
を避けるために、搬送系や各処理部を定期的にメンテナ
ンスつまり洗浄処理を施すが、その間装置が停止する
為、稼働率を下げる原因となっていた。特に、真空チャ
ンバー内にこの様な搬送系を有している装置において
は、真空系を立ち下げてから分解・洗浄する必要がある
為、メンテナンスが非常に繁雑であり、洗浄処理は稼働
率を大幅に下げる要因となっていた。
2. Description of the Related Art In a substrate processing apparatus, each processing section is connected by a transport system such as a belt type (A), a roller type (B), and a mechanical type (C) as shown in FIG. The system is a substrate,
It is transported by physical contact. At this time, if foreign matter adheres to the substrate, the foreign matter adheres to the belt 801 and the transfer arm 806 constituting the transfer system, and the foreign matter collects and causes dust. Then, there is a case where reverse contamination, that is, re-adhesion, occurs on a subsequent substrate, and if the substrate is required to have high cleanliness, it may cause a fatal defect in yield. In order to avoid this adverse effect, the transport system and each processing unit are periodically subjected to maintenance, that is, a cleaning process. However, the apparatus is stopped during that time, which causes a reduction in the operation rate. In particular, in an apparatus having such a transfer system in a vacuum chamber, maintenance is very complicated because it is necessary to disassemble and clean after shutting down the vacuum system. This was a significant factor.

【0003】また、このメンテナンスの頻度と労力を減
らす為に、処理基板の合間にダミーの基板を空搬送して
搬送系や各処理部に付着した異物を付着させて除去する
方法があるが、十分に異物の除去効果があるとは言えな
かった。
In order to reduce the frequency and labor of the maintenance, there is a method in which a dummy substrate is transported empty between processing substrates to remove foreign substances that have adhered to a transport system or each processing section. It could not be said that the foreign matter removing effect was sufficient.

【0004】[0004]

【発明が解決しようとする課題】上記の様に、従来の基
板処理装置のクリーニング方法では、搬送系や各処理部
を定期的にメンテナンスつまり洗浄処理を施す為に、装
置の稼働率を下げる原因となっていた。また、ダミーの
基板を空搬送する方法に於いては、異物の除去効果が十
分とは言えなかった。本発明は、装置の稼働率を落とさ
ずに、且つ異物の除去効果を向上させる基板処理装置の
クリーニング方法を提供する事を目的としている。
As described above, in the conventional method of cleaning a substrate processing apparatus, the maintenance of the transport system and each processing section is periodically performed, that is, a cleaning process is performed. Had become. Further, in the method of carrying the dummy substrate empty, the effect of removing foreign substances cannot be said to be sufficient. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of cleaning a substrate processing apparatus which does not reduce the operation rate of the apparatus and improves the effect of removing foreign substances.

【0005】[0005]

【課題を解決するための手段】本発明は上記の問題を解
決すべくなされたもので、粘着性の物質を固着した基板
を搬送する事により基板処理装置内のクリーニングを行
なうものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and is to perform cleaning in a substrate processing apparatus by transporting a substrate to which an adhesive substance is fixed.

【0006】[0006]

【発明の実施の形態】以下、図1乃至7を参照して本発
明に係る半導体基板処理装置のクリーニング方法の実施
例を、基板がウエハである場合を例に詳細に説明する。
図1及び図2に粘着性の物質を固着したウエハの構造体
の一例を示す。ウエハ上異物の付着は、ウエハと装置内
搬送経路の接触する部分に偏っているがその分布は多少
の広がりがある。従って、半導体ウエハの主面, 裏面,
側面の搬送過程で接触する部分を包括する様な広い範囲
に、各々粘着性の物質(ここでは両面粘着テープ)を貼
り付ける。ここでの搬送過程で接触する部分とは、図8
の様なベルト式,ローラ式,メカニカル式等の搬送系に
おけるウエハとの接触部分や、ウエハ保持用のツメまた
はクランプ,ウエハのストッパー,ウエハチャック等が
ある。図1は、本発明に係る半導体基板処理装置のクリ
ーニングに用いる粘着性のテープを固着したウエハの構
造体の一例を示したものであり、(A)は各要素を分離
した状態における斜視図、(B)は断面図である。半導
体ウエハ103の主面, 裏面, 側面の搬送過程で接触す
る部分を包括する様な広い範囲に、各々粘着性の物質
(ここでは両面粘着テープ)101, 104, 105を
貼り付けている。この粘着性のテープを固着したダミー
ウエハの異物除去能力は、搬送系や処理部の接触部分の
異物付着を行うにつれその清浄度が劣化する為、何等か
の方法で異物除去能力を回復する必要がある。ここで
は、テープを貼り換える事を異物能力の回復手段とす
る。その為、粘着テープ101に非粘着性の突起状薄膜
である両面粘着テープ剥離用非粘着部102を固着す
る。テープの貼り換えは、非粘着性の薄膜102を引っ
張ることにより粘着テープ101をウエハ103から引
き剥がし、新しい粘着テープ101を貼り付けることに
より、再利用が可能となる。上記粘着性の物質の着脱は
手で行なってもよいし、治具か装置で行なっても構わな
い。図2は本発明に係る半導体基板処理装置のクリーニ
ングに用いる粘着性のテープを固着したウエハの第2の
実施例を示したものであり、(A)は各要素を分離した
状態における斜視図、(B)は断面図である。半導体ウ
エハ203の主面, 裏面, 側面の搬送過程で接触する部
分を包括する様な広い範囲に、各々粘着性の物質(ここ
では両面粘着テープ)201, 204, 205を貼り付
けている。図1の場合は、搬送過程において例えばツメ
と接触するといった様に、ウエハ裏面のテープによる被
膜がドーナッツ状に必要となる場合を示しているのに対
し、図2の場合は、搬送過程においてウエハチャック等
と接触するといった様に、裏面全体がテープによる被膜
を必要とする場合を示している。この際、上記の様に、
装置の搬送系及び各処理部におけるウエハに接触する部
分の異物を、確実に吸着除去する為に、ウエハがテープ
によって覆われる範囲は、この接触部を包括する様な広
い範囲にする。この範囲は装置により異なり、ウエハ主
面に貼り付ける両面粘着テープの範囲の例を図3に示
す。図3は、本発明に係る半導体基板処理装置のクリー
ニングに用いる粘着性のテープを固着したウエハの第3
の実施例の上面図であり、(A)は周辺全周クランプ等
ウエハ周辺のドーナッツ状の部分に粘着テープを必要と
する場合(B)は周辺のつめ状クランプ等ウエハ周辺の
散在する領域に粘着テープを必要とする場合を示してい
る。また、図4は本発明に係る半導体基板処理装置のク
リーニングに用いる粘着性のテープを固着したウエハの
第4の実施例の断面図を示したものであり、(A)はウ
エハ全体の断面図、(B)は(A)a部の拡大断面図で
ある。図4(B)は、粘着剤402,支持体405,粘
着剤404の3層構造の両面粘着テープをウエハ403
の両面に貼り付けたものである。支持体の材料として
は、アセテートフィルム(マットフィニッシュ; 住友ス
リーエム),ポリエチレンテレフタレート(PET; フ
ジカラー),ふっ素樹脂,テフロン樹脂(テフロンスカ
イブドテープ)等があり、粘着剤としては真空プロセス
で不活性が必要とされる場合はシリコン系粘着剤が適当
であるが、常温・常圧プロセスでガスの発生をある程度
許容する場合はアクリル系粘着剤を使用する事も可能で
ある。尚、図4に示す両面体をウエハに貼り付ける場
合、基板側の粘着テープの剥離強度(f1)が最表面側
の剥離強度(f2)と同等か大きい事つまりf1≧f2
である事が必要となる。その理由は、f2の方がf1よ
りも大きい場合、搬送過程で両面テープ自身が剥離を起
こして接触部に付着する危険性が高く、異物除去という
目的に反するばかりか逆に搬送過程を汚染する事になる
為である。以上の例では、両面粘着テープを用いたが、
粘着性の薄膜であれば、他のものであっても構わない。
次に他の実施例として粘着剤をウエハに塗布により形成
する場合の一例を図5に示す。図5は本発明に係る半導
体基板処理装置のクリーニングに用いる粘着性の物質を
塗布により固着したウエハの一例の断面図を示したもの
であり、(A)はウエハ全体の断面図、(B)(C)は
(A)a部の拡大断面図で、(B)は塗布層が一層、
(C)は塗布層が2層の場合であり、ウエハの両面に対
し、アクリル系またはシリコン系の粘着剤を形成するも
のである。図5(C)の様に2層以上の粘着剤により粘
着層を形成する理由は、粘着性の物質による搬送過程の
汚染に対する危険性を回避する為には、上記と同様に剥
離強度がf1≧f2(f1:基板側の粘着剤の剥離強
度,f2:最表面側の粘着剤の剥離強度)の関係を満た
す様に各層の材料を選択する必要がある為。また、異物
除去能力の回復の手段としては、例えば02アッシャー
や硫酸過水処理により粘着剤を剥離し、再塗布する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a method for cleaning a semiconductor substrate processing apparatus according to the present invention will be described in detail with reference to FIGS.
1 and 2 show an example of a wafer structure to which an adhesive substance is fixed. Adhesion of foreign matter on the wafer is biased toward a portion where the wafer and the transfer path in the apparatus are in contact with each other, but the distribution is somewhat widened. Therefore, the main surface, back surface,
An adhesive substance (here, a double-sided adhesive tape) is attached to a wide area covering a portion that comes into contact in the side transport process. Here, the portion that comes into contact during the transport process is shown in FIG.
There are a contact portion with a wafer in a transfer system of a belt type, a roller type, a mechanical type, and the like, a claw or clamp for holding a wafer, a stopper for a wafer, a wafer chuck, and the like. 1A and 1B show an example of a wafer structure to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. (B) is a sectional view. Adhesive substances (here, double-sided adhesive tapes) 101, 104, and 105 are applied over a wide range so as to cover portions that come into contact with the main surface, the back surface, and the side surface of the semiconductor wafer 103 in the transfer process. The foreign matter removal ability of the dummy wafer to which the adhesive tape is adhered deteriorates as the foreign matter adheres to the contact portion of the transport system and the processing unit. Therefore, it is necessary to restore the foreign matter removal ability by some method. is there. Here, the replacement of the tape is used as a means for restoring the ability of foreign matter. Therefore, the non-adhesive portion 102 for peeling the double-sided adhesive tape, which is a non-adhesive protrusion-like thin film, is fixed to the adhesive tape 101. The tape can be re-used by pulling the non-adhesive thin film 102 to peel off the adhesive tape 101 from the wafer 103 and attaching a new adhesive tape 101. The attachment and detachment of the above-mentioned adhesive substance may be performed by hand, or may be performed by a jig or an apparatus. 2A and 2B show a second embodiment of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. 2A is a perspective view in a state where each element is separated, (B) is a sectional view. Adhesive substances (here, double-sided adhesive tapes) 201, 204, and 205 are applied over a wide range so as to cover portions that come into contact with the main surface, the back surface, and the side surface of the semiconductor wafer 203 in the transfer process. FIG. 1 shows a case in which a tape coating on the back surface of the wafer is required in a donut shape, such as contact with a claw in the transfer process, whereas FIG. This shows a case where the entire back surface needs to be coated with a tape, such as contact with a chuck or the like. At this time, as described above,
In order to surely adsorb and remove foreign matters in the transport system of the apparatus and the portions in contact with the wafer in each processing section, the area where the wafer is covered with the tape is set to a wide range including the contact section. This range differs depending on the apparatus, and FIG. 3 shows an example of the range of the double-sided adhesive tape to be attached to the main surface of the wafer. FIG. 3 is a view showing a third example of the wafer to which the adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed.
FIG. 7A is a top view of the embodiment of the present invention. FIG. 7A shows a case where an adhesive tape is required at a donut-shaped portion around a wafer such as a clamp around the entire periphery. FIG. The case where an adhesive tape is required is shown. FIG. 4 is a cross-sectional view of a fourth embodiment of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed, and (A) is a cross-sectional view of the entire wafer. (B) is an enlarged sectional view of (A) a part. FIG. 4B shows a double-sided pressure-sensitive adhesive tape having a three-layer structure of a pressure-sensitive adhesive 402, a support 405, and a pressure-sensitive adhesive 404.
It is attached to both sides of. Examples of the material of the support include an acetate film (mat finish; Sumitomo 3M), polyethylene terephthalate (PET; Fujicolor), a fluororesin, a Teflon resin (Teflon skived tape), and the like. When necessary, a silicone-based pressure-sensitive adhesive is suitable, but when gas generation is allowed to some extent in a normal temperature and normal pressure process, an acrylic pressure-sensitive adhesive can be used. When the double-sided body shown in FIG. 4 is attached to the wafer, the peel strength (f1) of the adhesive tape on the substrate side is equal to or greater than the peel strength (f2) on the outermost surface side, that is, f1 ≧ f2.
It is necessary to be. The reason is that when f2 is larger than f1, there is a high risk that the double-sided tape itself peels off and adheres to the contact portion in the transporting process, which is not only against the purpose of removing foreign substances but also contaminates the transporting process. It is because it becomes. In the above example, a double-sided adhesive tape was used,
Other materials may be used as long as they are sticky thin films.
Next, FIG. 5 shows another example in which an adhesive is formed on a wafer by coating. 5A and 5B are cross-sectional views of an example of a wafer to which an adhesive substance used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed by coating. FIG. 5A is a cross-sectional view of the entire wafer, and FIG. (C) is an enlarged cross-sectional view of (A) part a, (B) is a single coating layer,
(C) shows a case where the coating layer has two layers, in which an acrylic or silicon-based adhesive is formed on both surfaces of the wafer. The reason why the adhesive layer is formed by two or more adhesives as shown in FIG. 5C is that the peel strength is f1 in the same manner as described above in order to avoid the danger of the adhesive substance from being contaminated during the transportation process. This is because it is necessary to select the material of each layer so as to satisfy the relationship of ≧ f2 (f1: peel strength of the pressure-sensitive adhesive on the substrate side, f2: peel strength of the pressure-sensitive adhesive on the outermost surface side). As a means for restoring the ability to remove foreign substances, the adhesive is peeled off by, for example, 02 asher or sulfuric acid / hydrogen peroxide treatment, and then applied again.

【0007】次に、図6を参照して本発明に係る半導体
ウエハ処理装置のクリーニング方法の実施例を詳細に説
明する。半導体基板処理装置は、処理ウエハ603の搬
送の繰り返しにより搬送過程でウエハ603と接触する
部分、つまり搬送経路やウエハ保持用のツメやブレード
のツメ或いはウエハチャック(静電チャック)上にダス
トが溜り発塵の原因になる為、上記粘着性の物質を固着
したウエハ603を処理ウエハの合間にウエハ処理装置
の搬送系に空搬送する。処理を行うウエハ603をウエ
ハカセット601に載せた状態でカセットチャンバー6
02内のカセットホルダー607にセットする。カセッ
トチャンバー602が真空に引かれウエハローディング
チャンバー605との差圧が一定値以下になったところ
でカセットチャンバー602とウエハローディングチャ
ンバー605を隔てているゲートバルブ606が開きウ
エハカセット601はカセットホルダー607とともに
ウエハローディングチャンバー605へ移送される。移
送完了後ゲートバルブ606を閉じる。次にエッチング
チャンバー608とウエハローディングチャンバー60
5を隔てているゲートバルブを開いてウエハカセット6
01にセットされているウエハ603を一枚づつエッチ
ングチャンバー608内に搬送する。以下図7を用いて
ウエハローディングチャンバー605からエッチングチ
ャンバー608へのウエハ603の受け渡し搬送の過程
を説明する。図7(A)のブレード706によりウエハ
カセット701から持ち上げられたウエハ703は、図
7(B)に示した様に、搬送用アーム705のウエハ保
持用のツメ702により保持され、しかるのちブレード
706は元の位置に下がる。次に図7(C)に示した様
に、ウエハ703はゲートバルブ708が開かれた後、
搬送用アーム705によりウエハチャック(静電チャッ
ク)704の直上まで運ばれ、この位置までウエハチャ
ック704が移動することによりウエハはウエハチャッ
ク704にチャッキングされ、ウエハチャック704は
後退する。その後、図7(D)に示した様に、搬送アー
ム705はウエハ703との接触回避の為ウエハローデ
ィングチャンバー605へ移動する。しかるのちにゲー
トバルブ708を閉じ、ウエハのエッチングを開始す
る。処理後の受け渡し搬送は上記の逆の動作により、ウ
エハチャック704からウエハカセット701までウエ
ハ703を搬送する。粘着性物質を固着したダミーウエ
ハ搬送処理の頻度に関しては、処理間隔を時間で管理し
ても良いし、また処理ロット数で管理しても良い。ま
た、クリーニング処理のみの為に搬送しても良い。ま
た、枚数については、他工程から受ける汚染の程度及び
次の空搬送迄の間に処理されるウエハに必要とされる清
浄度のレベルにより決められる。従って、ウエハ数枚毎
に織り込む事も考えられる。この様に、粘着性の物質を
固着したウエハの搬送は、任意の時間に任意の枚数行う
ことが出来る。
Next, an embodiment of a method for cleaning a semiconductor wafer processing apparatus according to the present invention will be described in detail with reference to FIG. In the semiconductor substrate processing apparatus, dust accumulates on a portion that comes into contact with the wafer 603 in the transfer process by repeating the transfer of the processed wafer 603, that is, on a transfer path, a claw of a wafer holding claw or a blade, or a wafer chuck (electrostatic chuck). In order to cause dust, the wafer 603 to which the above-mentioned adhesive substance is adhered is transported empty to the transport system of the wafer processing apparatus between the processing wafers. With the wafer 603 to be processed placed on the wafer cassette 601, the cassette chamber 6
02 in the cassette holder 607. When the cassette chamber 602 is evacuated and the pressure difference between the wafer loading chamber 605 and the wafer loading chamber 605 becomes lower than a predetermined value, the gate valve 606 separating the cassette chamber 602 and the wafer loading chamber 605 opens, and the wafer cassette 601 and the cassette holder 607 are moved together. It is transferred to the loading chamber 605. After the transfer is completed, the gate valve 606 is closed. Next, the etching chamber 608 and the wafer loading chamber 60
5 is opened to open the wafer cassette 6
The wafers 603 set at 01 are transferred one by one into the etching chamber 608. Hereinafter, the process of transferring and transferring the wafer 603 from the wafer loading chamber 605 to the etching chamber 608 will be described with reference to FIG. The wafer 703 lifted from the wafer cassette 701 by the blade 706 in FIG. 7A is held by the wafer holding claw 702 of the transfer arm 705 as shown in FIG. Goes down to its original position. Next, as shown in FIG. 7 (C), after the gate valve 708 is opened,
The wafer is transferred to a position directly above the wafer chuck (electrostatic chuck) 704 by the transfer arm 705, and the wafer chuck 704 is moved to this position, whereby the wafer is chucked by the wafer chuck 704, and the wafer chuck 704 is retracted. Thereafter, as shown in FIG. 7D, the transfer arm 705 moves to the wafer loading chamber 605 in order to avoid contact with the wafer 703. Thereafter, the gate valve 708 is closed, and etching of the wafer is started. In the transfer operation after the processing, the wafer 703 is transferred from the wafer chuck 704 to the wafer cassette 701 by the reverse operation. Regarding the frequency of the dummy wafer transfer processing to which the adhesive substance is fixed, the processing interval may be managed by time or the number of processing lots. Further, it may be transported only for the cleaning process. Further, the number of sheets is determined by the degree of contamination received from another process and the level of cleanliness required for the wafers to be processed until the next empty transfer. Therefore, weaving may be considered for every several wafers. In this manner, the transfer of the wafer to which the adhesive substance is fixed can be performed at an arbitrary time and in an arbitrary number.

【0008】尚、上記は真空チャンバーを有する処理装
置の場合を上げたが 、大気下における処理装置にも適
用できることは言うまでもない。また枚葉式かバッチ式
どちらの形態にも適用することが出来るし、フォトマス
ク或いはレティクル等ウエハ以外の基板を搬送する装置
にも適用できる。また、基板に貼り付ける粘着性物質
は、上記においては粘着性及びガスの発生を考慮して上
記の様な選択をしたが、装置及び処理基板の必要に応じ
て耐熱性,耐水性,耐薬品性,帯油性等、様々な条件が
考えられる為、支持体を含め使用目的に適合した素材を
選択すべきことは言うまでもない。
Although the above description has been given of a processing apparatus having a vacuum chamber, it goes without saying that the present invention can be applied to a processing apparatus in the atmosphere. Further, the present invention can be applied to either a single wafer type or a batch type, and can also be applied to an apparatus for transferring a substrate other than a wafer such as a photomask or a reticle. In the above, the adhesive substance to be attached to the substrate is selected as described above in consideration of the adhesiveness and generation of gas. However, heat resistance, water resistance, and chemical resistance may be used according to the requirements of the apparatus and the processing substrate. Since various conditions such as properties and oiliness can be considered, it is needless to say that a material suitable for the purpose of use including the support should be selected.

【0009】[0009]

【発明の効果】上述した様に本発明によれば、ウエハ処
理装置の搬送系及び各処理部における、ウエハに接触す
る部分の異物を確実に吸着除去出来る。またその結果、
従来行われていたメンテナンスを人が行なう方法に対し
ては、ウエハの搬送経路のセミオートクリーニング, イ
ンサイチュクリーニングが、高い清浄度レベルで達成さ
れる為、オペレーターの負担つまり頻度と労力を大幅に
省き、且つ稼働率を向上する事が可能となる。これは、
特に真空系を使った装置に対して真空系を立ち下げてか
ら分解・洗浄する必要性等の作業性の差から効果度が高
く、将来的には、装置又はユニットの局所クリーン化を
行う際にも、同様の理由で高い効果度が得られる。ま
た、この方法は任意のウエハ枚数間隔でローディングす
る事が可能であり、ダミーウエハのローディングの頻度
を高める事により、搬送経路のコンタミネーションコン
トロールのリアルタイム制御が可能となる。また従来の
ダミーウエハを空搬送する方法に対しては、使用するダ
ミーウエハの枚数の大幅な削減が可能となる為、前記ウ
エハ処理装置の稼働率を向上する事が出来る。また本発
明によれば、装置内清浄度の信頼性が向上する為、安定
した製品歩留りを得ることが出来る。
As described above, according to the present invention, it is possible to surely adsorb and remove a foreign substance at a portion in contact with a wafer in a transfer system and each processing section of a wafer processing apparatus. As a result,
Compared to the conventional method of performing maintenance manually, semi-automatic cleaning and in-situ cleaning of the wafer transfer path are achieved at a high cleanliness level, greatly reducing the burden on the operator, that is, the frequency and labor, In addition, it is possible to improve the operation rate. this is,
In particular, it is highly effective due to the difference in workability, such as the necessity of bringing down the vacuum system and then disassembling and cleaning the equipment using a vacuum system. Also, a high degree of effectiveness can be obtained for the same reason. In addition, this method allows loading at an arbitrary wafer number interval, and increases the frequency of loading of dummy wafers, thereby enabling real-time control of contamination control of a transfer path. In addition, in contrast to the conventional method of carrying dummy wafers by empty transfer, the number of dummy wafers to be used can be greatly reduced, so that the operation rate of the wafer processing apparatus can be improved. Further, according to the present invention, since the reliability of the cleanliness in the apparatus is improved, a stable product yield can be obtained.

【0010】また、本発明においてはダミーウエハに固
着される粘着性の物質に非粘着性の突起状薄膜を固着す
る事により、粘着性の物質を容易に剥がす事が出来る
為、再度の貼り付けが可能となり、粘着性の物質を固着
したダミーウエハの再生利用が可能となる。
In the present invention, since the non-adhesive projection-like thin film is fixed to the adhesive substance fixed to the dummy wafer, the adhesive substance can be easily peeled off. This makes it possible to reuse a dummy wafer to which an adhesive substance is fixed.

【図面の簡単な説明】[Brief description of the drawings]

【図1 】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの構造体の
一例を示したものであり、(A)は各要素を分離した状
態における斜視図、(B)は断面図ある。
FIG. 1 shows an example of a wafer structure to which an adhesive tape used for cleaning a semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. 1 (A) is a perspective view in a state where each element is separated; (B) is a sectional view.

【図2 】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの第2の実
施例を示したものであり、(A)は各要素を分離した状
態における斜視図、(B)は断面図ある。
FIG. 2 shows a second embodiment of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed, and FIG. 2 (A) is a perspective view in a state where each element is separated. , (B) are cross-sectional views.

【図3 】は、本発明に係る半導体基板処理装置のクリー
ニングに用いる粘着性のテープを固着したウエハの第3
の実施例の上面図であり、(A)はウエハ周辺のドーナ
ッツ状部分に(B)はウエハ周辺の散在する領域に、各
々粘着テープを必要とする場合を示している。
FIG. 3 is a view showing a third example of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed.
FIGS. 3A and 3B are top views of the embodiment, in which FIG. 3A shows a case where an adhesive tape is required for a donut-shaped portion around the wafer, and FIG.

【図4 】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性のテープを固着したウエハの第4の実
施例の断面図を示したものであり、(A)はウエハ全体
の断面図、(B)は(A)a部の拡大断面図である。
FIG. 4 is a cross-sectional view of a fourth embodiment of a wafer to which an adhesive tape used for cleaning the semiconductor substrate processing apparatus according to the present invention is fixed, wherein (A) is a cross-sectional view of the entire wafer, (B) is an enlarged sectional view of (A) a part.

【図5】本発明に係る半導体基板処理装置のクリーニン
グに用いる粘着性の物質を塗布により固着したウエハの
一例の断面図を示したものであり、(A)はウエハ全体
の断面図、(B)(C)は(A)a部の断面図で、
(B)は塗布層が一層、(C)は塗布層が2層の場合で
ある。
FIGS. 5A and 5B are cross-sectional views of an example of a wafer to which an adhesive substance used for cleaning of the semiconductor substrate processing apparatus according to the present invention is fixed by coating; FIG. 5A is a cross-sectional view of the entire wafer; (C) is a cross-sectional view of (A) a part,
(B) shows the case where there is one coating layer, and (C) shows the case where there are two coating layers.

【図6】本発明の一実施例に則した半導体基板処理装置
のクリーニングを行う装置概略構成における断面図であ
る。
FIG. 6 is a sectional view of a schematic configuration of an apparatus for cleaning a semiconductor substrate processing apparatus according to an embodiment of the present invention.

【図7】本発明の一実施例に則した半導体基板処理装置
のクリーニングを行う装置のウエハ搬送にかかわる内部
構造図であり、(A)(B)(C)(D)はウエハがロ
ーディングされる過程におけるシーケンス経過毎の状態
を示している。
FIG. 7 is an internal structural view related to wafer transfer of an apparatus for cleaning a semiconductor substrate processing apparatus according to an embodiment of the present invention, wherein (A), (B), (C), and (D) show wafers loaded; 2 shows the state of each sequence in the process.

【図8】従来の一般的なウエハ搬送系の斜視図である。FIG. 8 is a perspective view of a conventional general wafer transfer system.

【符号の説明】[Explanation of symbols]

101 201 301 401 501: ウエハ主
面に貼り付ける両面粘着テープ 102 202 : 両面粘着テープ
剥離用非粘着部 103 203 403 503 603 7
03:半導体ウエハ 104 204 :ウエハ裏面に貼り
付ける両面粘着テープ 105 205 :ウエハ側面に貼り
付ける両面粘着テープ 301 :ウエハ表面のテープ貼り付け範囲 302 :ウエハ端部 401:両面テープ 402 502:粘着剤1 404 504:粘着剤2 405 505:支持体 601 701 :ウエハカセット 602 :カセットチャンバ
ー 604 704 :ウエハチャック 605 :ウエハローディン
グチャンバー 606 708 :ゲートバルブ 607 :カセットホルダー 608 :エッチングチャン
バー 702 :ウエハ保持用ツメ 705 :ウエハ搬送アーム 706 :ウエハ搬送用ブレード 707 :ウエハ搬送用ブレードのツ
メ 709 :チャンバー壁 801 :ベルト 802 :プーリー 804 :駆動モーター 805 :ローラー 806 :搬送アーム 807 :ウエハ接触面 808 :バキューム穴 809 :スライドボックス 810 :スライドステージ
101 201 301 401 501: Double-sided adhesive tape to be attached to the main surface of the wafer 102 202: Non-adhesive portion for peeling off double-sided adhesive tape 103 203 403 503 603 7
03: Semiconductor wafer 104 204: Double-sided adhesive tape to be attached to the back of the wafer 105 205: Double-sided adhesive tape to be attached to the side of the wafer 301: Tape attachment range on the wafer surface 302: Wafer end 401: Double-sided tape 402 502: Adhesive 1 404 504: Adhesive 2 405 505: Support 601 701: Wafer cassette 602: Cassette chamber 604 704: Wafer chuck 605: Wafer loading chamber 606 708: Gate valve 607: Cassette holder 608: Etching chamber 702: Wafer holding claw 705 : Wafer transfer arm 706: Wafer transfer blade 707: Wafer transfer blade tab 709: Chamber wall 801: Belt 802: Pulley 804: Drive motor 05: Roller 806: transfer arm 807: wafer contact surface 808: Vacuum holes 809: slide box 810: slide stage

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】表面,裏面,側面の内、少なくとも一面に
粘着性の物質を固着した基板を、基板処理装置本体内に
搬送する事を特徴とする前記基板処理装置のクリーニン
グ方法。
1. A method of cleaning a substrate processing apparatus, comprising: transporting a substrate having an adhesive substance adhered to at least one of a front surface, a rear surface, and a side surface into a substrate processing apparatus main body.
【請求項2】前記粘着性の物質は、粘着性を有するテー
プ状の薄膜であることを特徴とする請求項1記載のクリ
ーニング方法。
2. The cleaning method according to claim 1, wherein the sticky substance is a tape-like thin film having stickiness.
【請求項3】前記粘着性の物質に対し、非粘着性の突起
状物質が固着されていることを特徴とする請求項1又は
2記載のクリーニング方法。
3. The cleaning method according to claim 1, wherein a non-adhesive protruding substance is fixed to the adhesive substance.
【請求項4】前記テープ状の薄膜の基板側の剥離強度
が、表面側の剥離強度と同等かそれよりも大きい事を特
徴とする請求項2乃至3記載のクリーニング方法。
4. The cleaning method according to claim 2, wherein the peel strength of the tape-shaped thin film on the substrate side is equal to or greater than the peel strength on the surface side.
【請求項5】前記粘着性の物質は、粘着剤を塗布したも
のであることを特徴とする請求項1記載のクリーニング
方法。
5. The cleaning method according to claim 1, wherein said adhesive substance is one coated with an adhesive.
【請求項6】前記粘着剤は、剥離強度の異なる少なくと
も2種類以上の粘着剤を塗布した積層構造であることを
特徴とする請求項5記載のクリーニング方法。
6. The cleaning method according to claim 5, wherein said adhesive has a laminated structure in which at least two or more adhesives having different peel strengths are applied.
【請求項7】前記粘着剤は、基板側の粘着剤の剥離強度
が表面側の粘着剤の剥離強度と同等かそれよりも大きい
事を特徴とする請求項6記載のクリーニング方法。
7. The cleaning method according to claim 6, wherein the pressure-sensitive adhesive has a peel strength of the pressure-sensitive adhesive on the substrate side equal to or greater than a peel strength of the pressure-sensitive adhesive on the surface side.
【請求項8】表面,裏面,側面の内、少なくとも一面に
粘着性の物質を固着したダミーウエハを、基板処理装置
本体内搬送経路に搬送する事を特徴とする基板処理装置
のクリーニング方法。
8. A method for cleaning a substrate processing apparatus, comprising: transferring a dummy wafer having an adhesive substance adhered to at least one of the front, rear, and side surfaces to a transfer path in a substrate processing apparatus main body.
JP31153596A 1996-11-22 1996-11-22 Method of cleaning semiconductor substrate processing device Pending JPH10154686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31153596A JPH10154686A (en) 1996-11-22 1996-11-22 Method of cleaning semiconductor substrate processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31153596A JPH10154686A (en) 1996-11-22 1996-11-22 Method of cleaning semiconductor substrate processing device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2001155467A Division JP2002033251A (en) 2001-05-24 2001-05-24 Substrate for cleaning semiconductor treating apparatus, its manufacturing method, and its regenerating method
JP2001155468A Division JP2002047466A (en) 2001-05-24 2001-05-24 Double-sided self-adhesive tape for cleaning for semiconductor substrate-treating device
JP2002296731A Division JP2003209034A (en) 2002-10-09 2002-10-09 Cleaning method of semiconductor substrate treatment device

Publications (1)

Publication Number Publication Date
JPH10154686A true JPH10154686A (en) 1998-06-09

Family

ID=18018417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31153596A Pending JPH10154686A (en) 1996-11-22 1996-11-22 Method of cleaning semiconductor substrate processing device

Country Status (1)

Country Link
JP (1) JPH10154686A (en)

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