JP2000012492A - Polishing method for semiconductor wafer and semiconductor wafer structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To cover the surface of a semiconductor wafer with a reinforcing material to the front part of a die cage and to protect a semiconductor device by making the reinforcing material having a specified elastic modulus to the surface of the semiconductor wafer at the time of polishing the back of the semiconductor wafer. SOLUTION: A semiconductor device is formed on the main surface of a semiconductor wafer 100. A reinforcing material 110 for protecting the semiconductor device is adhered onto the main surface of the semiconductor wafer 100 with reinforcing material adhesive 120 with adhesion intensity (w). The reinforcing material adhesive 120 is peeled off from the main surface of the semiconductor wafer without affecting the semiconductor device in a subsequent process, and it has to possess the adhesion intensity (w) of a degree that the semiconductor wafer and the reinforcing material do not cause deviation at the time of polishing the back of the semiconductor wafer, 30-40 g/25 mm, for example. The reinforcing material is made of PET and it has the elastic modulus of about 4.6×10E9-4.3×10E9 pascals.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a method for polishing a semiconductor wafer and a semiconductor wafer, and more particularly to a method for protecting a semiconductor wafer with a reinforcing material during polishing and a semiconductor wafer with a reinforcing material bonded to a dicing tape.

[0002]

2. Description of the Related Art In recent years, in order to produce ICs for smart cards and the like, semiconductor chips having a very small thickness have been required, and semiconductor wafers having an increasingly smaller thickness will be required in the future.

Conventionally, when a semiconductor wafer is manufactured, after a semiconductor device is formed on a semiconductor main surface, a soft vinyl tape (typically made of EVA (Ethylene vinyl acetate copolymer)) is used to protect the semiconductor device. Was adhered to the semiconductor main surface, and then the back surface of the semiconductor wafer was polished. FIG. 5 illustrates the process flow. FIG. 5A shows a semiconductor wafer 5
FIG. 10 is a perspective view when a vinyl tape 560 is adhered to the top of the sheet. In detail, the vinyl tape is about 2.1x10
E8 ~ 6.8 × 10E7 Pascal elasticity. In the case of a 6-inch wafer, the thickness of the wafer before backside polishing is about 625 to 6
It is 30 microns and the back side is polished to about 350 microns. However, smart card ICs, etc.
Zero microns is too thick and requires polishing to about 100-150 microns. However, approximately 100
Polishing to ~ 150 microns has the problem that the "deflection" of the wafer becomes very large, even with low elasticity vinyl tape. For example, FIG.
As shown in FIG. 4A, when inserting the semiconductor wafer after back polishing into the carrier box, a portion of the semiconductor wafer that is not supported by the support (eg, arm, belt conveyor, etc.) is bent downward, and FIG. Collision does not fit into the groove of the carrier box as indicated by the arrow B. As a result, there is a problem that the semiconductor wafer falls from the support or the periphery of the semiconductor wafer is broken. In addition, this "deflection or distortion"
It also hinders the backside of the semiconductor wafer from being fixed by vacuum, causing various troubles. In addition, the edge of the semiconductor wafer after the back surface polishing has an acute angle (see FIG. 2).
A) With a soft vinyl tape, the edge of the semiconductor wafer cannot be sufficiently protected, and even if the edge of the semiconductor wafer hits the carrier box, it may be broken even if it fits in the groove of the carrier box. The semiconductor wafer is liable to crack from the crushed portion, causing the wafer to crack. Furthermore, the debris causes process contamination as particles. As the diameter of the semiconductor wafer increases, the moment increases, so that the "deflection" of the conventional method becomes more and more remarkable.

[0004] Conventionally, as a process from the back surface polishing to the die cage, the vinyl tape is peeled off after the back surface polishing,
Next, a dicing tape was attached to the back surface of the semiconductor wafer to perform die cage (A to D in FIG. 5). However, after peeling off the vinyl tape, until the die cage,
The semiconductor devices on the semiconductor wafer are not protected,
There is a possibility that the semiconductor device may be damaged or contaminated. Furthermore, the step of peeling off the vinyl tape and the step of attaching the dicing tape to the back surface of the semiconductor wafer are processed as separate steps, and there is a trouble of hand carry between them.

Accordingly, the present invention provides a method for polishing a wafer to a thickness of about 100 to 150 microns, which is required for a smart card IC or the like, so that the wafer cannot be accommodated in a groove of a carrier box using a transfer system. It is an object of the present invention to provide a polishing method for preventing a "bending" and a crack caused by breaking of an edge of a semiconductor wafer.

Another object of the present invention is to provide a polishing method for protecting a semiconductor device by coating the surface of a semiconductor wafer with a reinforcing material before a die cage.

Further, the present invention makes it possible to reduce the number of steps in a single step from the step of peeling off the vinyl tape to the step of attaching the dicing tape to the back surface of the semiconductor wafer without the need for a hand carry. One of the objectives.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, when polishing the back surface of a semiconductor wafer, a conventional vinyl tape (typically made of EVA (Ethylene vinyl acetate copolymer)) is used instead of the conventional vinyl tape, and a reinforcing material is used for the semiconductor wafer. Attach to and protect the surface. The reinforcement is, for example, PE
It is a synthetic resin such as T, acrylic, and vinyl chloride. Preferably, when the wafer with the reinforcing material is polished to a size of about 150 microns or less, the warp is such that the wafer can be accommodated in at least the groove of the carrier box when transported by the existing wafer transport apparatus. It is a PET with a degree of rigidity. More specifically, for example, conventional vinyl tape is about
2.1x10E8 to 6.8x10E7 with a modulus of Pascal, while PE
The T stiffener has a modulus of about 4.6 × 10E9 to 4.3 × 10E9 Pascal. (Sample thickness: 100 microns, measurement frequency: 11 Hz, measuring machine: RHE0VIBRON DDV-II-EA, manufactured by Toyo Pauldwin Co.) In addition, the thickness of the PET reinforcing material when used is approximately 120 microns. That is, preferably about 200 microns.

In the first embodiment, a semiconductor wafer, a reinforcing material and a dicing tape are used. Please understand that the figures are only schematic.

FIG. 1A shows a semiconductor wafer 100 to which a reinforcing material 110 is attached. Semiconductor wafer 10
A semiconductor device is formed on the main surface of the O. Next, a reinforcing material 110 for protecting the semiconductor device is provided on the main surface of the semiconductor wafer 100 with a reinforcing material adhesive 12 having an adhesive strength w.
Attach at 0. The reinforcing material adhesive 120 exists at the boundary between the semiconductor wafer 100 and the reinforcing material 110. The reinforcing material adhesive 120 is peeled off from the main surface of the semiconductor wafer without affecting the semiconductor device in a later step, and the semiconductor wafer and the reinforcing material are displaced when the back surface of the semiconductor wafer is polished. It must have an inadequate adhesive strength w. For example, the adhesive strength w is 70 g / 25 mm or less, preferably 30 to 40 g / 25 mm. Here, the adhesive strength is 1 hour after adhesion, and the tensile speed is 300m
It was measured under the conditions of m / min and a peel angle of 180 degrees.

FIG. 1B shows the semiconductor wafer 101 after polishing the back surface of the semiconductor wafer 100 and the reinforcing member 110 attached to the main surface thereof.

FIG. 2 shows the semiconductor wafer 10 shown in FIG.
FIG. 1 shows a schematic cross-sectional view of a reinforcing member 110 attached to the main surface 1 and a main surface thereof. In FIG. 2, a cross-sectional view of the back surface of the semiconductor wafer before polishing and a cross-sectional view of the back surface of the semiconductor wafer after polishing are superimposed for easy understanding. The semiconductor wafer 200 before polishing, the semiconductor wafer 201 after polishing, and the reinforcing material 210 are shown. Typically, the semiconductor wafer 200
Has a rounded shape (called beveling) when enlarged. Assuming that the back surface of the semiconductor wafer 201 after polishing of the semiconductor wafer 200 is the back surface 220, the peripheral edge 225 of the back surface 220 has an acute angle as illustrated. More specifically, the thickness of the semiconductor wafer 200 before polishing is about 62
5 to 630 microns, and the polished semiconductor wafer 201 is about 150 microns or less. When the main surface of the semiconductor wafer is coated with a soft material having low elasticity such as a conventional vinyl tape, this sharp peripheral edge 225 is not sufficiently protected and the carrier box used for transport (typically, Teflon) is used. Made of such material)
Often, a portion of the periphery 225 breaks. It is a process of peeling off the vinyl tape, especially after polishing the back side,
This is likely to occur due to hand carry between the step of attaching the dicing tape to the back surface of the semiconductor wafer. Such a lack of a part of the peripheral edge 225 causes cracks in the semiconductor wafer and causes “wafer cracking”. In addition, the broken pieces remain in the carrier box and cause contamination in the semiconductor wafer manufacturing process as particles. Therefore, instead of the vinyl tape, the reinforcing plate 250 having the above rigidity is replaced with the semiconductor wafer 20.
0 on the main surface. This reinforcing plate 210 is the same as the diameter a of the back surface 220 of the polished semiconductor wafer 201,
Or has a larger diameter b. In FIG. 2B,
FIG. 3 illustrates a plan view of A in FIG. 2. As shown in FIG. 2B, the reinforcing plate 250 is attached to the main surface of the semiconductor wafer 200 before polishing so that the peripheral edge 225 of the polished semiconductor wafer 201 does not protrude outside the peripheral edge 215 of the reinforcing plate 210. Let it be. This protects the sharp edge 225, cracking the wafer due to cracks,
Prevents contamination in the semiconductor wafer manufacturing process due to debris.

FIG. 1C shows a dicing tape 1 on the back surface of the polished semiconductor wafer 101 to which the reinforcing material 110 is attached.
30 is a dicing tape adhesive 124 having an adhesive strength z.
FIG. Dicing tape 130 may be a conventional material. The adhesive strength z is larger than the adhesive strength w. Preferably, the adhesive strength w is about 30-40 g / 25 mm
And the adhesive strength z is about 70 g / 25 mm or more. Due to this difference in adhesive strength, the reinforcing member 110 can be peeled off from the main surface of the semiconductor wafer 101 later without the semiconductor wafer 101 being peeled off from the dicing tape 130.

Referring to FIG. 1C, as another embodiment,
A material that transmits ultraviolet light (UV) is used for the reinforcing material 110, and an adhesive whose adhesive strength changes due to irradiation of ultraviolet light is used for the reinforcing material adhesive 120. For example, assuming that the adhesive strength wa of the reinforcing material adhesive 120 before irradiation with ultraviolet light changes to the adhesive strength wb after irradiation with ultraviolet light, the adhesive strength wa
Is the semiconductor wafer 1 when the back side of the semiconductor wafer 100 is polished.
The adhesive strength is such that the adhesion between the reinforcing member 110 and the main surface of the semiconductor wafer 100 is sufficiently maintained so that the reinforcing member 110 sufficiently protects the main surface of the semiconductor wafer 100. Adhesive strength w
b indicates that the reinforcing member 110 is not removed from the dicing tape 130 and the reinforcing material 110 is removed from the semiconductor wafer 10.
The adhesive strength is such that it can be peeled off from No. 1. Preferably, the cohesive strength wa is greater than about 70 grams / 25 mm and the cohesive strength wb is about 30-40 grams / 25 mm. Thereby, before the ultraviolet irradiation, the reinforcing material 110 and the semiconductor wafer 10
0 can be polished with the back surface polished while maintaining sufficient adhesion to the main surface.
10 can be peeled from the semiconductor wafer 101.

FIG. 1D shows how the reinforcing member 110 is peeled off from the semiconductor wafer 101. here,
Adhesive strength w or adhesive strength wb of reinforcing material adhesive 120
Is smaller than the adhesive strength z of the dicing tape 130, so that the reinforcing member 110 can be removed from the semiconductor wafer 10 without peeling the semiconductor wafer 101 from the dicing tape 130.
1 can be peeled off. In particular, when the method of irradiating the ultraviolet rays is used, the step of removing the reinforcing member 110 can be easily processed.

FIG. 1E shows the semiconductor wafer 101 and the dicing tape after the reinforcing member 110 has been peeled off from the semiconductor wafer 101. In this state, die cage processing can be performed. Here, it should be noted that B to E in FIG. 1 (including ultraviolet irradiation) can be processed as a series of steps. For example, a "Tape Manter" manufactured by Lintec Co., Ltd. can be processed as a series of steps by a single apparatus.

According to the present embodiment, a method for protecting the peripheral edge of a semiconductor wafer after backside polishing and preventing the peripheral edge from being broken, which may cause a wafer crack, and a method for protecting a semiconductor wafer having a thickness of about 150 μm or less after backside polishing. A method has been disclosed in which the semiconductor wafer can be securely stored in a carrier box while suppressing "bending" of the semiconductor wafer when the semiconductor wafer is transferred in an automatic transfer system. Further, according to the present embodiment, the process from after polishing the back surface of the semiconductor wafer to immediately before the die cage can be performed as a series of processes. Therefore, conventionally, hand carry from the step of peeling off the protective vinyl tape to the step of attaching the dicing tape is not required, which contributes to shortening the manufacturing process and reducing cycle time. Furthermore, since the semiconductor device is protected by a reinforcing material, an adhesive, etc. until immediately before the die cage, contamination of the semiconductor device is reduced,
It also leads to improved yield.

In the second embodiment, a semiconductor wafer, a reinforcing material, a dicing tape, and a conventionally used protective vinyl tape are used.

FIG. 3A shows a semiconductor wafer 300 before polishing the back surface, a protective vinyl tape 360 thereon, and a reinforcing material 310 on the protective vinyl tape 360 (the reinforcing material 310 is the reinforcing material of FIGS. 1 and 2). The same material as the material may be used, and the reinforcing material 310 is typically a PFT. Vinyl tape 360 for protection
Are adhered on the main surface of the semiconductor wafer 300 by a vinyl tape adhesive 328 having an adhesive strength y. Reinforcement 3
10 is adhered on the protective vinyl tape 360 by the reinforcing material adhesive 320 having an adhesive strength x. The vinyl tape adhesive 328 exists between the protective vinyl tape 360 and the main surface of the semiconductor wafer 300. The reinforcing material adhesive 320 exists between the reinforcing material 310 and the protective vinyl tape 360. The cohesive strength x is very high, more particularly about 300-500 grams / 25 mm. The adhesive 328 for vinyl tape will be used in a later process.
The semiconductor wafer must be peeled off from the main surface of the semiconductor wafer without affecting the semiconductor device, and have such an adhesive strength y that the semiconductor wafer and the reinforcing material do not shift when the back surface of the semiconductor wafer is polished. For example, the adhesive strength y is 70 g / 25 mm or less, preferably 30 to 40
Grams / 25mm.

FIG. 3B shows the polished semiconductor wafer 30.
1, there is shown a diagram in which a protective vinyl tape 360 is provided thereon, and a reinforcing material 310 is attached on the protective vinyl tape 360. Polished semiconductor wafer 30
1 is about 150 microns or less, similar to that shown in FIG. Reinforcing material 310 on protective vinyl tape 360
Also have a size (diameter) as shown in FIG. 2 and are attached to an arrangement as described above (FIG. 2).

FIG. 3C shows a dicing tape 330.
Has an adhesive strength z on the back surface of the polished semiconductor wafer 301.
FIG. 13 is a view attached by a dicing tape adhesive 324 of FIG. The dicing tape adhesive 324 exists between the back surface of the semiconductor wafer 301 and the dicing tape 330. For example, the adhesive strength z is greater than or equal to about 70 grams / 25 mm, and is preferably about 70 grams / 25 mm. Therefore, the relationship of the adhesive strength y <the adhesive strength z <the adhesive strength x is established. Due to this adhesive strength relationship, the reinforcing material 310 and the vinyl tape 360 can be peeled off from the main surface of the semiconductor wafer 301 later without the semiconductor wafer 301 being peeled off from the dicing tape 330. FIG.
D shows how the reinforcing material 310 and the vinyl tape 360 are peeled off.

Here, as another embodiment, the reinforcing material 31
A material that transmits ultraviolet light (UV) is used for the vinyl tape 360 and the protective vinyl tape 360, and an adhesive whose adhesive strength changes by irradiation of ultraviolet light is used for the adhesive 328 for the vinyl tape. For example, when the adhesive strength ya of the adhesive 328 for vinyl tape before ultraviolet irradiation changes to the adhesive strength yb after ultraviolet irradiation, the adhesive strength ya becomes
The adhesive strength is such that the protective vinyl tape 360 and the main surface of the semiconductor wafer 300 are securely adhered to each other so that the protective vinyl tape 360 sufficiently protects the main surface of the semiconductor wafer 300 at the time of polishing the back surface of the semiconductor wafer 300. Also,
The adhesive strength yb is such an adhesive strength that the reinforcing member 310 and the protective vinyl tape 360 can be peeled off from the semiconductor wafer 101 without the semiconductor wafer 301 being peeled off from the dicing tape 330. Preferably, the adhesive strength ya is about 70 grams / 25 mm or more and the adhesive strength wb
Is about 30-40 grams / 25mm. Thereby, before the ultraviolet irradiation, the back surface can be polished while the adhesion between the protective vinyl tape 360 and the main surface of the semiconductor wafer 300 is sufficiently maintained, and after the ultraviolet irradiation, the reinforcing material 310 and the protection can be easily formed. The vinyl tape 360 can be peeled off from the semiconductor wafer 301.

FIG. 3D shows a protective vinyl tape 36.
0 and the state where the reinforcing material 310 is peeled off from the semiconductor wafer 301 are shown. Here, as described above, since the adhesive strength y or the adhesive strength yb of the vinyl tape adhesive 328 is smaller than the adhesive strength z of the dicing tape 330, the semiconductor wafer 301 is
Protective vinyl tape 360 without peeling from zero
In addition, the reinforcing member 310 can be peeled off from the semiconductor wafer 301. By the way, as described above, the adhesive strength x is
In the present embodiment, only the reinforcing material 310 is peeled off from the vinyl tape 360 because the adhesive strength is much larger than the adhesive strengths y and w, and the vinyl tape 360 is
Does not remain on the main surface of the

FIG. 3E shows a protective vinyl tape 36.
Semiconductor wafer 301 and dicing tape 3 after peeling off reinforcing material 310 from semiconductor wafer 301.
30 is shown. In this state, die cage processing can be performed. Here, it should be noted that B to E in FIG.
(Including ultraviolet irradiation) can be processed as a series of steps. For example, by Lintec's "Tape Manter", a single device, as a series of processes,
Can be processed.

In this embodiment, the semiconductor wafer 300
By applying a conventional low-elasticity protective vinyl tape between the semiconductor device 300 and the reinforcing member 310, the semiconductor devices on the semiconductor wafer 300 can be better protected than in the first embodiment. Here, the protective vinyl tape is
It does not need to be a conventional one, nor does it need to be a vinyl tape. Further, the third embodiment has the same effect as the first embodiment. That is, according to the present embodiment, a method for protecting the peripheral edge of the semiconductor wafer after the rear surface polishing and preventing the peripheral edge from being broken, which causes a wafer crack, and a thickness of about 150 after the rear surface polishing.
When a semiconductor wafer of submicron size is transferred by an automatic transfer system, the semiconductor wafer can be securely stored in a carrier box while suppressing "bending" of the semiconductor wafer. Further, according to the present embodiment, the process from after polishing the back surface of the semiconductor wafer to immediately before the die cage can be performed as a series of processes. Therefore, conventionally, hand carry from the step of peeling off the protective vinyl tape to the step of attaching the dicing tape is not required, which contributes to shortening the manufacturing process and reducing cycle time. Furthermore, since the semiconductor device is protected by a reinforcing material, an adhesive, or the like until immediately before the die cage, contamination of the semiconductor device is reduced, which leads to improvement in yield.

The adhesive 120 for reinforcing material of FIG. 1A or the adhesive 328 for vinyl tape of FIG. 3A remains on the surface of the semiconductor wafer after the reinforcing material or the protective vinyl tape is peeled off. There may be a problem. However, in the state of the art, such adhesive residue has been largely improved. In particular, the adhesive that changes at the stage of ultraviolet irradiation becomes rubber-like after ultraviolet irradiation, and can cope with most irregularities on the surface of the semiconductor wafer. Therefore, in a process that does not use the stage of ultraviolet irradiation, it is considered that washing with die cage is sufficient,
In the process using the stage of ultraviolet irradiation, it is considered that even washing with water at the time of the die cage is not required. Therefore, adhesive residue on the semiconductor wafer surface is not a problem.

[Brief description of the drawings]

FIG. 1 is a flow chart before and after a back surface polishing step of a semiconductor wafer according to the present invention.

FIG. 2 is an enlarged sectional view and a plan view of FIG. 1B according to the present invention;

FIG. 3 is a flowchart before and after a back surface polishing step of a semiconductor wafer according to the present invention.

FIG. 4 is a diagram of a problem in the related art.

FIG. 5 is a flow chart before and after a back surface polishing step of a semiconductor wafer in a conventional technique.

[Explanation of symbols]

100, 101, 200, 201, 300, 301
Semiconductor wafer 110, 210, 310 Reinforcing material 120 First adhesive 130, 330 Dicing tape 250 Back surface 124, 324 Fourth adhesive 215, 225 Peripheral 220, 320, Second adhesive 328 Third adhesive 360 Tape

Claims (14)

[Claims] 1. A method for polishing a semiconductor wafer, comprising:
A step of attaching a reinforcing material (110) to the surface of the semiconductor wafer (100) on which the semiconductor devices are formed with a first adhesive (120) having an adhesive strength w, wherein the reinforcing material (1) is provided.
10) has an elastic modulus of 1.0 × 10E9 to 4.6 × 10E9 Pascal, where the bonding step;
A polishing step of polishing a back surface of the semiconductor wafer (100) having the 0) deposited thereon. 2. The method according to claim 1, wherein the semiconductor wafer after polishing the back surface of the semiconductor wafer.
When the maximum diameter a of 1) and the diameter b of the reinforcing member (210) are set, b ≧ a, and the periphery (215) of the reinforcing member (210) causes the back surface ( 250) The edge (225) of the semiconductor wafer (201) after polishing is protected; 3. The method according to claim 1, wherein the attaching step comprises the step of transmitting a stiffener (11) permeable to UV light.
0) on the surface of the semiconductor wafer (100); and further, through the reinforcing material (110), a first adhesive (120).
A step of irradiating the substrate with ultraviolet light, wherein the adhesive strength after ultraviolet irradiation becomes smaller than the adhesive strength before ultraviolet irradiation w by irradiation with ultraviolet light. 4. A method for polishing a semiconductor wafer, comprising:
A tape (360) is adhered to the surface of the semiconductor wafer (300) on which the semiconductor devices are formed with a third adhesive (328) having an adhesive strength y, and then a reinforcing material (310) is adhered on the tape. adhering with a second adhesive (320) having an adhesive strength x greater than y, wherein the reinforcing material (310) has an elastic modulus of 1.0 x 10E9 to 4.6 x 10E9 pascal; and Polishing the back surface of the semiconductor wafer (300) to which the reinforcing material (310) has been attached. 5. The method according to claim 4, wherein the back side of the semiconductor wafer is polished.
When the maximum diameter a of 1) and the diameter b of the reinforcing member (310) are set, b ≧ a, and the peripheral edge of the reinforcing member (310) causes the back surface of the semiconductor wafer (300) to be polished after polishing. A method wherein the periphery of the semiconductor wafer (301) is protected. 6. A method for polishing a semiconductor wafer, comprising:
An ultraviolet-permeable tape (360) is adhered to the surface of the semiconductor wafer (300) on which the semiconductor devices are formed with a third adhesive (328) having an adhesive strength y, and thereafter, a reinforcing material (310) that transmits ultraviolet light. ) Is attached to the tape with a second adhesive (320) having an adhesive strength x, and the reinforcing material (310) is 1.0 × 10E9 to 4.6 × 10E.
An attaching step having an elastic modulus of 9 Pascal; the semiconductor wafer (10) to which the reinforcing material (110) is attached;
0) polishing the back surface; and said tape (3)
60) and irradiating the second and third adhesives (320, 328) with ultraviolet light through the reinforcing material (310), and after the irradiation of the ultraviolet light, the adhesive strength y becomes smaller than the adhesive strength x.
An ultraviolet irradiation step. 7. The method according to claim 1, wherein:
After the polishing step, the polished semiconductor wafer (10
A dicing tape (130) is applied to the back surface of 1) with adhesive strength z
The step of attaching with a fourth adhesive (124), wherein the adhesive strength w is smaller than the adhesive strength z. 8. The method according to claim 3, wherein after the polishing step, a dicing tape is applied to the back surface of the polished semiconductor wafer (101) with a fourth adhesive (12) having an adhesive strength z.
A step of attaching a dicing tape to be attached in 4); and a step of irradiating the first adhesive (120) with ultraviolet rays through the reinforcing material (110). Wherein the method comprises the steps of: 9. The method according to claim 4, wherein after the polishing step, the polished semiconductor wafer (3).
01) adhering a dicing tape (330) to the back surface of the substrate with a fourth adhesive (324) having an adhesive strength z,
Adhesive strength y <Adhesive strength z and Adhesive strength y <Adhesive strength x
A step of applying a dicing tape. 10. The method according to claim 6, wherein after the polishing step, a dicing tape (330) is applied to the back surface of the polished semiconductor wafer (301) by a fourth adhesive (324) having an adhesive strength z. Dicing tape attaching step; and the reinforcing material (310) and tape (32)
0), and irradiating the second and third adhesives (320, 328) with ultraviolet light. After the irradiation of the ultraviolet light, the adhesive strength y <the adhesive strength z and the adhesive strength y <the adhesive strength x, A method comprising the steps of: 11. A semiconductor wafer structure comprising: a semiconductor wafer (101); and a 1.0 × 10 9 adhesive deposited on a surface of the semiconductor wafer (101) by a first adhesive (120).
Reinforcing material with elastic modulus of E9 to 4.6 x 10E9 Pascal (11
0); a semiconductor wafer structure comprising: 12. A semiconductor wafer structure comprising: a semiconductor wafer (101); which is attached to a surface of the semiconductor wafer (101) by a first adhesive (120) having an adhesive strength w, and is 1.0 × 10E9 or more. Has an elastic modulus of 4.6 x 10E9 Pascal,
And an ultraviolet-permeable reinforcing material (110); adhesive strength after ultraviolet irradiation w <adhesive strength before ultraviolet irradiation w
A semiconductor wafer structure. 13. A semiconductor wafer structure comprising: a semiconductor wafer (301); a tape (360) adhered on a surface of the semiconductor wafer (301) by a third adhesive (328) having an adhesive strength y; And a reinforcing material (310) adhered on the surface of the tape (360) by a second adhesive (320) having an adhesive strength x greater than the adhesive strength y, wherein the reinforcing material (310) is 1.0 x 10E9 to 4.6 x 10E9
Reinforcing material having elasticity of Pascal (31
0); a semiconductor wafer structure comprising: 14. A semiconductor wafer structure comprising: a semiconductor wafer (301); a tape (360) adhered to a surface of the semiconductor wafer (301) by a third adhesive (328) having an adhesive strength y. A tape (360) where UV light is transmitted; attached to the surface of the tape (360) by a second adhesive (320) having an adhesive strength of x, and 1.0 × 10E9 to 4.6 × 10E9 Pascal A reinforcing material (310) having an elastic modulus of:
A semiconductor wafer structure, comprising: a reinforcing material (310); and the adhesive strength y <the adhesive strength x after ultraviolet irradiation.