JPWO2021038363A5 - - Google Patents

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Publication number
JPWO2021038363A5
JPWO2021038363A5 JP2021541742A JP2021541742A JPWO2021038363A5 JP WO2021038363 A5 JPWO2021038363 A5 JP WO2021038363A5 JP 2021541742 A JP2021541742 A JP 2021541742A JP 2021541742 A JP2021541742 A JP 2021541742A JP WO2021038363 A5 JPWO2021038363 A5 JP WO2021038363A5
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Japan
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transistor
always
read
drain
rewrite
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JP2021541742A
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Japanese (ja)
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JPWO2021038363A1 (https=
JP7630430B2 (ja
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Priority claimed from PCT/IB2020/057716 external-priority patent/WO2021038363A1/ja
Publication of JPWO2021038363A1 publication Critical patent/JPWO2021038363A1/ja
Publication of JPWO2021038363A5 publication Critical patent/JPWO2021038363A5/ja
Priority to JP2025016608A priority Critical patent/JP2025069338A/ja
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Publication of JP7630430B2 publication Critical patent/JP7630430B2/ja
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JP2021541742A 2019-08-29 2020-08-17 半導体装置、電子機器 Active JP7630430B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025016608A JP2025069338A (ja) 2019-08-29 2025-02-04 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019156245 2019-08-29
JP2019156245 2019-08-29
JP2019220154 2019-12-05
JP2019220154 2019-12-05
PCT/IB2020/057716 WO2021038363A1 (ja) 2019-08-29 2020-08-17 半導体装置、電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025016608A Division JP2025069338A (ja) 2019-08-29 2025-02-04 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021038363A1 JPWO2021038363A1 (https=) 2021-03-04
JPWO2021038363A5 true JPWO2021038363A5 (https=) 2023-08-07
JP7630430B2 JP7630430B2 (ja) 2025-02-17

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ID=74683610

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JP2021541742A Active JP7630430B2 (ja) 2019-08-29 2020-08-17 半導体装置、電子機器
JP2025016608A Pending JP2025069338A (ja) 2019-08-29 2025-02-04 半導体装置

Family Applications After (1)

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JP2025016608A Pending JP2025069338A (ja) 2019-08-29 2025-02-04 半導体装置

Country Status (3)

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US (1) US20220328487A1 (https=)
JP (2) JP7630430B2 (https=)
WO (1) WO2021038363A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116368602A (zh) 2020-10-02 2023-06-30 株式会社半导体能源研究所 半导体装置
KR20230106849A (ko) * 2022-01-07 2023-07-14 삼성전자주식회사 반도체 장치
CN116206643B (zh) * 2022-07-25 2024-03-15 北京超弦存储器研究院 动态随机存储单元、存储器、存储装置及读取方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121194A (ja) * 1986-11-11 1988-05-25 Hitachi Ltd 半導体記憶装置
US7710765B2 (en) * 2007-09-27 2010-05-04 Micron Technology, Inc. Back gated SRAM cell
KR102480794B1 (ko) * 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
WO2011145738A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8902637B2 (en) * 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
WO2017068478A1 (en) 2015-10-22 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or memory device including the semiconductor device
US9998119B2 (en) * 2016-05-20 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR20180055701A (ko) * 2016-11-17 2018-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US10497712B2 (en) * 2017-03-16 2019-12-03 Toshiba Memory Corporation Semiconductor memory
US10043808B1 (en) 2017-03-16 2018-08-07 Toshiba Memory Corporation Semiconductor memory
JP2018206828A (ja) 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7195068B2 (ja) 2017-06-26 2022-12-23 株式会社半導体エネルギー研究所 半導体装置、電子機器

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