JPWO2020170067A5 - - Google Patents
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- Publication number
- JPWO2020170067A5 JPWO2020170067A5 JP2021501127A JP2021501127A JPWO2020170067A5 JP WO2020170067 A5 JPWO2020170067 A5 JP WO2020170067A5 JP 2021501127 A JP2021501127 A JP 2021501127A JP 2021501127 A JP2021501127 A JP 2021501127A JP WO2020170067 A5 JPWO2020170067 A5 JP WO2020170067A5
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- directly connected
- bit line
- local bit
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000006870 function Effects 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024070456A JP7702530B2 (ja) | 2019-02-22 | 2024-04-24 | 半導体装置 |
| JP2025105753A JP2025138720A (ja) | 2019-02-22 | 2025-06-23 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019030030 | 2019-02-22 | ||
| JP2019030030 | 2019-02-22 | ||
| PCT/IB2020/051040 WO2020170067A1 (ja) | 2019-02-22 | 2020-02-11 | 半導体装置および当該半導体装置を有する電気機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024070456A Division JP7702530B2 (ja) | 2019-02-22 | 2024-04-24 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020170067A1 JPWO2020170067A1 (enExample) | 2020-08-27 |
| JPWO2020170067A5 true JPWO2020170067A5 (enExample) | 2023-01-31 |
| JP7480113B2 JP7480113B2 (ja) | 2024-05-09 |
Family
ID=72144825
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021501127A Active JP7480113B2 (ja) | 2019-02-22 | 2020-02-11 | 半導体装置および当該半導体装置を有する電気機器 |
| JP2024070456A Active JP7702530B2 (ja) | 2019-02-22 | 2024-04-24 | 半導体装置 |
| JP2025105753A Pending JP2025138720A (ja) | 2019-02-22 | 2025-06-23 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024070456A Active JP7702530B2 (ja) | 2019-02-22 | 2024-04-24 | 半導体装置 |
| JP2025105753A Pending JP2025138720A (ja) | 2019-02-22 | 2025-06-23 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11968820B2 (enExample) |
| JP (3) | JP7480113B2 (enExample) |
| KR (1) | KR20210127721A (enExample) |
| CN (1) | CN113454718B (enExample) |
| WO (1) | WO2020170067A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109213774B (zh) * | 2018-08-01 | 2024-03-08 | 平安科技（深圳）有限公司 | 数据的存储方法及装置、存储介质、终端 |
| WO2020170067A1 (ja) * | 2019-02-22 | 2020-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置および当該半導体装置を有する電気機器 |
| US12457732B2 (en) | 2019-08-22 | 2025-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory cell and memory device |
| US12322652B2 (en) * | 2022-05-09 | 2025-06-03 | International Business Machines Corporation | Local interconnect for cross coupling |
| US20230369218A1 (en) * | 2022-05-11 | 2023-11-16 | International Business Machines Corporation | Interlevel via for stacked field-effect transistor device |
| JP2023177534A (ja) * | 2022-06-02 | 2023-12-14 | キオクシア株式会社 | メモリデバイス |
| WO2024028682A1 (ja) * | 2022-08-02 | 2024-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| TWI857842B (zh) * | 2023-11-08 | 2024-10-01 | 旺宏電子股份有限公司 | 三維記憶體 |
| US12406735B2 (en) | 2023-11-08 | 2025-09-02 | Macronix International Co., Ltd. | 3D memory |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001185700A (ja) * | 1999-12-27 | 2001-07-06 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100935936B1 (ko) | 2007-09-12 | 2010-01-11 | 삼성전자주식회사 | 적층 메모리 장치 |
| US7898893B2 (en) * | 2007-09-12 | 2011-03-01 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
| KR20100120080A (ko) | 2009-05-04 | 2010-11-12 | 삼성전자주식회사 | 적층 메모리 소자 |
| JP2010263211A (ja) | 2009-05-04 | 2010-11-18 | Samsung Electronics Co Ltd | 積層メモリ素子 |
| JP2011204829A (ja) | 2010-03-25 | 2011-10-13 | Toshiba Corp | 半導体記憶装置 |
| JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| US20120307545A1 (en) * | 2011-06-01 | 2012-12-06 | Texas Instruments Incorporated | Interleaved Bit Line Architecture for 2T2C Ferroelectric Memories |
| JP2013065638A (ja) | 2011-09-15 | 2013-04-11 | Elpida Memory Inc | 半導体装置 |
| JP6635670B2 (ja) | 2014-04-11 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2015170220A1 (en) | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| CN106796918A (zh) * | 2014-10-10 | 2017-05-31 | 株式会社半导体能源研究所 | 半导体装置、电路板及电子设备 |
| US9786383B2 (en) * | 2015-02-25 | 2017-10-10 | Ememory Technology Inc. | One time programmable non-volatile memory and read sensing method thereof |
| WO2016181256A1 (ja) * | 2015-05-12 | 2016-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品および電子機器 |
| US10319743B2 (en) | 2016-12-16 | 2019-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display system, and electronic device |
| JP2018133016A (ja) | 2017-02-17 | 2018-08-23 | 株式会社半導体エネルギー研究所 | ニューラルネットワークシステム |
| JP2018201003A (ja) * | 2017-05-26 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| WO2018220491A1 (ja) | 2017-06-02 | 2018-12-06 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品及び電子機器 |
| JP6975560B2 (ja) * | 2017-06-23 | 2021-12-01 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US10395710B1 (en) * | 2018-05-21 | 2019-08-27 | Avalanche Technology, Inc. | Magnetic memory emulating dynamic random access memory (DRAM) |
| WO2020170067A1 (ja) * | 2019-02-22 | 2020-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置および当該半導体装置を有する電気機器 |
| JP7535032B2 (ja) * | 2019-02-22 | 2024-08-15 | 株式会社半導体エネルギー研究所 | エラー検出機能を有する記憶装置、半導体装置、および、電子機器 |
-
2020
- 2020-02-11 WO PCT/IB2020/051040 patent/WO2020170067A1/ja not_active Ceased
- 2020-02-11 KR KR1020217029009A patent/KR20210127721A/ko not_active Ceased
- 2020-02-11 CN CN202080014280.5A patent/CN113454718B/zh active Active
- 2020-02-11 US US17/427,934 patent/US11968820B2/en active Active
- 2020-02-11 JP JP2021501127A patent/JP7480113B2/ja active Active
-
2024
- 2024-04-18 US US18/638,994 patent/US20240268092A1/en active Pending
- 2024-04-24 JP JP2024070456A patent/JP7702530B2/ja active Active
-
2025
- 2025-06-23 JP JP2025105753A patent/JP2025138720A/ja active Pending
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