JPWO2020170067A1 - - Google Patents

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Publication number
JPWO2020170067A1
JPWO2020170067A1 JP2021501127A JP2021501127A JPWO2020170067A1 JP WO2020170067 A1 JPWO2020170067 A1 JP WO2020170067A1 JP 2021501127 A JP2021501127 A JP 2021501127A JP 2021501127 A JP2021501127 A JP 2021501127A JP WO2020170067 A1 JPWO2020170067 A1 JP WO2020170067A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021501127A
Other languages
Japanese (ja)
Other versions
JP7480113B2 (ja
JPWO2020170067A5 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020170067A1 publication Critical patent/JPWO2020170067A1/ja
Publication of JPWO2020170067A5 publication Critical patent/JPWO2020170067A5/ja
Priority to JP2024070456A priority Critical patent/JP7702530B2/ja
Application granted granted Critical
Publication of JP7480113B2 publication Critical patent/JP7480113B2/ja
Priority to JP2025105753A priority patent/JP2025138720A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
JP2021501127A 2019-02-22 2020-02-11 半導体装置および当該半導体装置を有する電気機器 Active JP7480113B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024070456A JP7702530B2 (ja) 2019-02-22 2024-04-24 半導体装置
JP2025105753A JP2025138720A (ja) 2019-02-22 2025-06-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019030030 2019-02-22
JP2019030030 2019-02-22
PCT/IB2020/051040 WO2020170067A1 (ja) 2019-02-22 2020-02-11 半導体装置および当該半導体装置を有する電気機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024070456A Division JP7702530B2 (ja) 2019-02-22 2024-04-24 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020170067A1 true JPWO2020170067A1 (enExample) 2020-08-27
JPWO2020170067A5 JPWO2020170067A5 (enExample) 2023-01-31
JP7480113B2 JP7480113B2 (ja) 2024-05-09

Family

ID=72144825

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021501127A Active JP7480113B2 (ja) 2019-02-22 2020-02-11 半導体装置および当該半導体装置を有する電気機器
JP2024070456A Active JP7702530B2 (ja) 2019-02-22 2024-04-24 半導体装置
JP2025105753A Pending JP2025138720A (ja) 2019-02-22 2025-06-23 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024070456A Active JP7702530B2 (ja) 2019-02-22 2024-04-24 半導体装置
JP2025105753A Pending JP2025138720A (ja) 2019-02-22 2025-06-23 半導体装置

Country Status (5)

Country Link
US (2) US11968820B2 (enExample)
JP (3) JP7480113B2 (enExample)
KR (1) KR20210127721A (enExample)
CN (1) CN113454718B (enExample)
WO (1) WO2020170067A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109213774B (zh) * 2018-08-01 2024-03-08 平安科技（深圳）有限公司 数据的存储方法及装置、存储介质、终端
US11968820B2 (en) * 2019-02-22 2024-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
CN114258586A (zh) 2019-08-22 2022-03-29 株式会社半导体能源研究所 存储单元及存储装置
US12322652B2 (en) * 2022-05-09 2025-06-03 International Business Machines Corporation Local interconnect for cross coupling
US20230369218A1 (en) * 2022-05-11 2023-11-16 International Business Machines Corporation Interlevel via for stacked field-effect transistor device
JP2023177534A (ja) * 2022-06-02 2023-12-14 キオクシア株式会社 メモリデバイス
TW202407807A (zh) * 2022-08-02 2024-02-16 日商半導體能源研究所股份有限公司 半導體裝置以及電子裝置
TWI857842B (zh) * 2023-11-08 2024-10-01 旺宏電子股份有限公司 三維記憶體
US12406735B2 (en) 2023-11-08 2025-09-02 Macronix International Co., Ltd. 3D memory

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JP2001185700A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 半導体記憶装置
JP2009071313A (ja) * 2007-09-12 2009-04-02 Samsung Electronics Co Ltd 積層メモリ装置
JP2010263211A (ja) * 2009-05-04 2010-11-18 Samsung Electronics Co Ltd 積層メモリ素子
WO2016181256A1 (ja) * 2015-05-12 2016-11-17 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器

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KR100935936B1 (ko) 2007-09-12 2010-01-11 삼성전자주식회사 적층 메모리 장치
KR20100120080A (ko) 2009-05-04 2010-11-12 삼성전자주식회사 적층 메모리 소자
JP2011204829A (ja) 2010-03-25 2011-10-13 Toshiba Corp 半導体記憶装置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US20120307545A1 (en) * 2011-06-01 2012-12-06 Texas Instruments Incorporated Interleaved Bit Line Architecture for 2T2C Ferroelectric Memories
JP2013065638A (ja) 2011-09-15 2013-04-11 Elpida Memory Inc 半導体装置
JP6635670B2 (ja) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
WO2016055903A1 (en) * 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9786383B2 (en) * 2015-02-25 2017-10-10 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
US10319743B2 (en) 2016-12-16 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
JP2018133016A (ja) 2017-02-17 2018-08-23 株式会社半導体エネルギー研究所 ニューラルネットワークシステム
JP2018201003A (ja) * 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
CN117560925A (zh) 2017-06-02 2024-02-13 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
JP6975560B2 (ja) * 2017-06-23 2021-12-01 株式会社半導体エネルギー研究所 記憶装置
US10395710B1 (en) * 2018-05-21 2019-08-27 Avalanche Technology, Inc. Magnetic memory emulating dynamic random access memory (DRAM)
CN113424310A (zh) * 2019-02-22 2021-09-21 株式会社半导体能源研究所 具有错误检测功能的存储装置、半导体装置以及电子设备
US11968820B2 (en) * 2019-02-22 2024-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185700A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 半導体記憶装置
JP2009071313A (ja) * 2007-09-12 2009-04-02 Samsung Electronics Co Ltd 積層メモリ装置
JP2010263211A (ja) * 2009-05-04 2010-11-18 Samsung Electronics Co Ltd 積層メモリ素子
WO2016181256A1 (ja) * 2015-05-12 2016-11-17 株式会社半導体エネルギー研究所 半導体装置、電子部品および電子機器

Also Published As

Publication number Publication date
JP2025138720A (ja) 2025-09-25
CN113454718B (zh) 2025-10-31
KR20210127721A (ko) 2021-10-22
US11968820B2 (en) 2024-04-23
JP7480113B2 (ja) 2024-05-09
WO2020170067A1 (ja) 2020-08-27
US20220093600A1 (en) 2022-03-24
JP2024097816A (ja) 2024-07-19
US20240268092A1 (en) 2024-08-08
CN113454718A (zh) 2021-09-28
JP7702530B2 (ja) 2025-07-03

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