JPWO2020071175A5 - - Google Patents

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Publication number
JPWO2020071175A5
JPWO2020071175A5 JP2020550313A JP2020550313A JPWO2020071175A5 JP WO2020071175 A5 JPWO2020071175 A5 JP WO2020071175A5 JP 2020550313 A JP2020550313 A JP 2020550313A JP 2020550313 A JP2020550313 A JP 2020550313A JP WO2020071175 A5 JPWO2020071175 A5 JP WO2020071175A5
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JP
Japan
Prior art keywords
thin film
gallium
oxide
gallium oxide
ppm
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JP2020550313A
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English (en)
Japanese (ja)
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JP7368372B2 (ja
JPWO2020071175A1 (ja
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Priority claimed from PCT/JP2019/037274 external-priority patent/WO2020071175A1/ja
Publication of JPWO2020071175A1 publication Critical patent/JPWO2020071175A1/ja
Publication of JPWO2020071175A5 publication Critical patent/JPWO2020071175A5/ja
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JP2020550313A 2018-10-04 2019-09-24 薄膜の製造方法 Active JP7368372B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018189092 2018-10-04
JP2018189092 2018-10-04
PCT/JP2019/037274 WO2020071175A1 (ja) 2018-10-04 2019-09-24 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜の製造方法および化合物

Publications (3)

Publication Number Publication Date
JPWO2020071175A1 JPWO2020071175A1 (ja) 2021-09-02
JPWO2020071175A5 true JPWO2020071175A5 (https=) 2022-09-21
JP7368372B2 JP7368372B2 (ja) 2023-10-24

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JP2020550313A Active JP7368372B2 (ja) 2018-10-04 2019-09-24 薄膜の製造方法

Country Status (8)

Country Link
US (1) US11555044B2 (https=)
EP (1) EP3862462A4 (https=)
JP (1) JP7368372B2 (https=)
KR (1) KR102775932B1 (https=)
CN (1) CN112789367A (https=)
IL (1) IL281975B2 (https=)
TW (1) TWI848976B (https=)
WO (1) WO2020071175A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240167154A1 (en) * 2021-03-08 2024-05-23 Adeka Corporation Thin-film forming raw material, which is used in atomic layer deposition method, thin-film, method of producing thin-film, and zinc compound
EP4123061A1 (en) * 2021-07-22 2023-01-25 Siltronic AG Method for producing a gallium oxide layer on a substrate
JPWO2023182313A1 (https=) * 2022-03-25 2023-09-28
JPWO2023182311A1 (https=) * 2022-03-25 2023-09-28
WO2023182312A1 (ja) * 2022-03-25 2023-09-28 国立大学法人東海国立大学機構 β型酸化ガリウム膜付き基板及びその製造方法
CN120476123A (zh) * 2022-11-18 2025-08-12 默克专利有限公司 用于气相薄膜沉积技术的具有改善的热稳定性的分子内稳定的13族金属络合物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276832A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 被膜形成方法およびそれを用いた半導体装置の製造方法
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US5149853A (en) * 1986-09-16 1992-09-22 Merck Patent Gesellschaft Mit Beschraenkter Haftung Organometallic compounds
DE3907579A1 (de) * 1989-03-09 1990-09-13 Merck Patent Gmbh Verwendung von metallorganischen verbindungen zur abscheidung duenner filme aus der gasphase
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
US8101237B2 (en) * 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
EP2492273A1 (en) * 2011-02-23 2012-08-29 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of gallium containing thin films using gallium alkylamide precursor
JP6199292B2 (ja) 2011-09-23 2017-09-20 ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated プラズマ活性化されるコンフォーマル誘電体膜
WO2015103358A1 (en) 2014-01-05 2015-07-09 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
JP6249875B2 (ja) * 2014-05-14 2017-12-20 株式会社Adeka コバルト化合物、薄膜形成用原料及び薄膜の製造方法
KR20160082321A (ko) * 2014-12-31 2016-07-08 주식회사 유진테크 머티리얼즈 알루미늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법
EP4092154A1 (en) 2015-06-16 2022-11-23 Versum Materials US, LLC Processes for depositing silicon-containing films using same
CA2920646A1 (en) * 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method
JP6703269B2 (ja) 2016-07-12 2020-06-03 富士通株式会社 化合物半導体装置及びその製造方法

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