KR102775932B1 - 원자층 퇴적법용 박막 형성용 원료, 박막 형성용 원료, 박막의 제조 방법 및 화합물 - Google Patents

원자층 퇴적법용 박막 형성용 원료, 박막 형성용 원료, 박막의 제조 방법 및 화합물 Download PDF

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KR102775932B1
KR102775932B1 KR1020217012355A KR20217012355A KR102775932B1 KR 102775932 B1 KR102775932 B1 KR 102775932B1 KR 1020217012355 A KR1020217012355 A KR 1020217012355A KR 20217012355 A KR20217012355 A KR 20217012355A KR 102775932 B1 KR102775932 B1 KR 102775932B1
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thin film
raw material
atomic layer
layer deposition
gallium
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KR20210070318A (ko
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나나 오카다
도모하루 요시노
아츠시 야마시타
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가부시키가이샤 아데카
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020217012355A 2018-10-04 2019-09-24 원자층 퇴적법용 박막 형성용 원료, 박막 형성용 원료, 박막의 제조 방법 및 화합물 Active KR102775932B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018189092 2018-10-04
JPJP-P-2018-189092 2018-10-04
PCT/JP2019/037274 WO2020071175A1 (ja) 2018-10-04 2019-09-24 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜の製造方法および化合物

Publications (2)

Publication Number Publication Date
KR20210070318A KR20210070318A (ko) 2021-06-14
KR102775932B1 true KR102775932B1 (ko) 2025-03-04

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Country Status (8)

Country Link
US (1) US11555044B2 (https=)
EP (1) EP3862462A4 (https=)
JP (1) JP7368372B2 (https=)
KR (1) KR102775932B1 (https=)
CN (1) CN112789367A (https=)
IL (1) IL281975B2 (https=)
TW (1) TWI848976B (https=)
WO (1) WO2020071175A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240167154A1 (en) * 2021-03-08 2024-05-23 Adeka Corporation Thin-film forming raw material, which is used in atomic layer deposition method, thin-film, method of producing thin-film, and zinc compound
EP4123061A1 (en) * 2021-07-22 2023-01-25 Siltronic AG Method for producing a gallium oxide layer on a substrate
JPWO2023182313A1 (https=) * 2022-03-25 2023-09-28
JPWO2023182311A1 (https=) * 2022-03-25 2023-09-28
WO2023182312A1 (ja) * 2022-03-25 2023-09-28 国立大学法人東海国立大学機構 β型酸化ガリウム膜付き基板及びその製造方法
CN120476123A (zh) * 2022-11-18 2025-08-12 默克专利有限公司 用于气相薄膜沉积技术的具有改善的热稳定性的分子内稳定的13族金属络合物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276832A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 被膜形成方法およびそれを用いた半導体装置の製造方法
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US5149853A (en) * 1986-09-16 1992-09-22 Merck Patent Gesellschaft Mit Beschraenkter Haftung Organometallic compounds
DE3907579A1 (de) * 1989-03-09 1990-09-13 Merck Patent Gmbh Verwendung von metallorganischen verbindungen zur abscheidung duenner filme aus der gasphase
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
US8101237B2 (en) * 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
EP2492273A1 (en) * 2011-02-23 2012-08-29 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of gallium containing thin films using gallium alkylamide precursor
JP6199292B2 (ja) 2011-09-23 2017-09-20 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ活性化されるコンフォーマル誘電体膜
WO2015103358A1 (en) 2014-01-05 2015-07-09 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
JP6249875B2 (ja) * 2014-05-14 2017-12-20 株式会社Adeka コバルト化合物、薄膜形成用原料及び薄膜の製造方法
KR20160082321A (ko) * 2014-12-31 2016-07-08 주식회사 유진테크 머티리얼즈 알루미늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법
EP4092154A1 (en) 2015-06-16 2022-11-23 Versum Materials US, LLC Processes for depositing silicon-containing films using same
CA2920646A1 (en) * 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method
JP6703269B2 (ja) 2016-07-12 2020-06-03 富士通株式会社 化合物半導体装置及びその製造方法

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Publication number Publication date
CN112789367A (zh) 2021-05-11
US20210340162A1 (en) 2021-11-04
JP7368372B2 (ja) 2023-10-24
EP3862462A4 (en) 2022-06-15
US11555044B2 (en) 2023-01-17
IL281975B2 (en) 2025-06-01
IL281975B1 (en) 2025-02-01
EP3862462A1 (en) 2021-08-11
WO2020071175A1 (ja) 2020-04-09
IL281975A (en) 2021-05-31
TWI848976B (zh) 2024-07-21
JPWO2020071175A1 (ja) 2021-09-02
KR20210070318A (ko) 2021-06-14
TW202026452A (zh) 2020-07-16

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