CN112789367A - 用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物 - Google Patents

用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物 Download PDF

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Publication number
CN112789367A
CN112789367A CN201980065368.7A CN201980065368A CN112789367A CN 112789367 A CN112789367 A CN 112789367A CN 201980065368 A CN201980065368 A CN 201980065368A CN 112789367 A CN112789367 A CN 112789367A
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CN
China
Prior art keywords
thin film
raw material
compound
atomic layer
gallium
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Pending
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CN201980065368.7A
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English (en)
Chinese (zh)
Inventor
冈田奈奈
吉野智晴
山下敦史
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Adeka Corp
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Adeka Corp
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Publication of CN112789367A publication Critical patent/CN112789367A/zh
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980065368.7A 2018-10-04 2019-09-24 用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物 Pending CN112789367A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018189092 2018-10-04
JP2018-189092 2018-10-04
PCT/JP2019/037274 WO2020071175A1 (ja) 2018-10-04 2019-09-24 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜の製造方法および化合物

Publications (1)

Publication Number Publication Date
CN112789367A true CN112789367A (zh) 2021-05-11

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CN201980065368.7A Pending CN112789367A (zh) 2018-10-04 2019-09-24 用于原子层沉积法的薄膜形成用原料、薄膜形成用原料、薄膜的制造方法及化合物

Country Status (8)

Country Link
US (1) US11555044B2 (https=)
EP (1) EP3862462A4 (https=)
JP (1) JP7368372B2 (https=)
KR (1) KR102775932B1 (https=)
CN (1) CN112789367A (https=)
IL (1) IL281975B2 (https=)
TW (1) TWI848976B (https=)
WO (1) WO2020071175A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240167154A1 (en) * 2021-03-08 2024-05-23 Adeka Corporation Thin-film forming raw material, which is used in atomic layer deposition method, thin-film, method of producing thin-film, and zinc compound
EP4123061A1 (en) * 2021-07-22 2023-01-25 Siltronic AG Method for producing a gallium oxide layer on a substrate
JPWO2023182313A1 (https=) * 2022-03-25 2023-09-28
JPWO2023182311A1 (https=) * 2022-03-25 2023-09-28
WO2023182312A1 (ja) * 2022-03-25 2023-09-28 国立大学法人東海国立大学機構 β型酸化ガリウム膜付き基板及びその製造方法
CN120476123A (zh) * 2022-11-18 2025-08-12 默克专利有限公司 用于气相薄膜沉积技术的具有改善的热稳定性的分子内稳定的13族金属络合物

Citations (7)

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JPS62276832A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 被膜形成方法およびそれを用いた半導体装置の製造方法
US5149853A (en) * 1986-09-16 1992-09-22 Merck Patent Gesellschaft Mit Beschraenkter Haftung Organometallic compounds
US5209952A (en) * 1989-03-09 1993-05-11 Merck Patent Gesellschaft Mit Beschraenkter Haftung Use of organometallic compounds to deposit thin films from the gas phase
CN102046838A (zh) * 2008-05-29 2011-05-04 乔治洛德方法研究和开发液化空气有限公司 用于膜沉积的碲前体
EP2492273A1 (en) * 2011-02-23 2012-08-29 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of gallium containing thin films using gallium alkylamide precursor
KR20160082350A (ko) * 2014-12-31 2016-07-08 주식회사 유진테크 머티리얼즈 유기 13족 전구체 및 이를 이용한 박막 증착 방법
US20170050998A1 (en) * 2014-05-14 2017-02-23 Adeka Corporation Cobalt compound, thin film-forming raw material, and method for producing thin film

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
JP6199292B2 (ja) 2011-09-23 2017-09-20 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ活性化されるコンフォーマル誘電体膜
WO2015103358A1 (en) 2014-01-05 2015-07-09 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
EP4092154A1 (en) 2015-06-16 2022-11-23 Versum Materials US, LLC Processes for depositing silicon-containing films using same
CA2920646A1 (en) * 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method
JP6703269B2 (ja) 2016-07-12 2020-06-03 富士通株式会社 化合物半導体装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62276832A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd 被膜形成方法およびそれを用いた半導体装置の製造方法
US5149853A (en) * 1986-09-16 1992-09-22 Merck Patent Gesellschaft Mit Beschraenkter Haftung Organometallic compounds
US5209952A (en) * 1989-03-09 1993-05-11 Merck Patent Gesellschaft Mit Beschraenkter Haftung Use of organometallic compounds to deposit thin films from the gas phase
CN102046838A (zh) * 2008-05-29 2011-05-04 乔治洛德方法研究和开发液化空气有限公司 用于膜沉积的碲前体
EP2492273A1 (en) * 2011-02-23 2012-08-29 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Deposition of gallium containing thin films using gallium alkylamide precursor
US20170050998A1 (en) * 2014-05-14 2017-02-23 Adeka Corporation Cobalt compound, thin film-forming raw material, and method for producing thin film
KR20160082350A (ko) * 2014-12-31 2016-07-08 주식회사 유진테크 머티리얼즈 유기 13족 전구체 및 이를 이용한 박막 증착 방법

Non-Patent Citations (1)

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Title
HERBERT SCHUMANN ET AL.: "NOVEL INTRAMOLECULARLY STABILIZED ORGANOGALLIUM AND ORGANOINDIUM COMPOUNDS AND THEIR USE IN MOVPE", 《POLYHEDRON》 *

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Publication number Publication date
US20210340162A1 (en) 2021-11-04
KR102775932B1 (ko) 2025-03-04
JP7368372B2 (ja) 2023-10-24
EP3862462A4 (en) 2022-06-15
US11555044B2 (en) 2023-01-17
IL281975B2 (en) 2025-06-01
IL281975B1 (en) 2025-02-01
EP3862462A1 (en) 2021-08-11
WO2020071175A1 (ja) 2020-04-09
IL281975A (en) 2021-05-31
TWI848976B (zh) 2024-07-21
JPWO2020071175A1 (ja) 2021-09-02
KR20210070318A (ko) 2021-06-14
TW202026452A (zh) 2020-07-16

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