JP6249875B2 - コバルト化合物、薄膜形成用原料及び薄膜の製造方法 - Google Patents
コバルト化合物、薄膜形成用原料及び薄膜の製造方法 Download PDFInfo
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- JP6249875B2 JP6249875B2 JP2014100607A JP2014100607A JP6249875B2 JP 6249875 B2 JP6249875 B2 JP 6249875B2 JP 2014100607 A JP2014100607 A JP 2014100607A JP 2014100607 A JP2014100607 A JP 2014100607A JP 6249875 B2 JP6249875 B2 JP 6249875B2
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- thin film
- cobalt
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- 239000010409 thin film Substances 0.000 title claims description 134
- 150000001869 cobalt compounds Chemical class 0.000 title claims description 78
- 239000002994 raw material Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title description 28
- 230000015572 biosynthetic process Effects 0.000 title description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008016 vaporization Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 description 73
- -1 alkoxide compound Chemical class 0.000 description 58
- 239000002243 precursor Substances 0.000 description 40
- 150000001875 compounds Chemical class 0.000 description 34
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 30
- 229910052719 titanium Inorganic materials 0.000 description 30
- 239000010936 titanium Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 28
- 229910017052 cobalt Inorganic materials 0.000 description 26
- 239000010941 cobalt Substances 0.000 description 26
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 25
- 239000007788 liquid Substances 0.000 description 25
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 24
- 238000005755 formation reaction Methods 0.000 description 24
- 239000012808 vapor phase Substances 0.000 description 23
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 19
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 238000002844 melting Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 239000000047 product Substances 0.000 description 14
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 229910000428 cobalt oxide Inorganic materials 0.000 description 12
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 12
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 11
- 229910052801 chlorine Inorganic materials 0.000 description 11
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 11
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000003446 ligand Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000000921 elemental analysis Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 7
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 7
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 7
- 239000013110 organic ligand Substances 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000012434 nucleophilic reagent Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000009834 vaporization Methods 0.000 description 6
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 5
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 4
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 4
- 239000012048 reactive intermediate Substances 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 150000001414 amino alcohols Chemical class 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- LEQVBGOJANWCKL-UHFFFAOYSA-N bis(trimethylsilyl)azanide;cobalt(2+) Chemical compound [Co+2].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C LEQVBGOJANWCKL-UHFFFAOYSA-N 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 150000002334 glycols Chemical class 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- TXGJTWACJNYNOJ-UHFFFAOYSA-N hexane-2,4-diol Chemical compound CCC(O)CC(C)O TXGJTWACJNYNOJ-UHFFFAOYSA-N 0.000 description 3
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 3
- 235000015067 sauces Nutrition 0.000 description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 2
- SYTBZMRGLBWNTM-SNVBAGLBSA-N (R)-flurbiprofen Chemical compound FC1=CC([C@H](C(O)=O)C)=CC=C1C1=CC=CC=C1 SYTBZMRGLBWNTM-SNVBAGLBSA-N 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- AKPLTHZVVWBOPT-UHFFFAOYSA-N 2,2-diethylbutane-1,3-diol Chemical compound CCC(CC)(CO)C(C)O AKPLTHZVVWBOPT-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- DSKYSDCYIODJPC-UHFFFAOYSA-N 2-butyl-2-ethylpropane-1,3-diol Chemical compound CCCCC(CC)(CO)CO DSKYSDCYIODJPC-UHFFFAOYSA-N 0.000 description 2
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
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- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
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- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
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- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
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- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052773 Promethium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- 125000004663 dialkyl amino group Chemical group 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
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- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
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- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- JDQLUYWHCUWSJE-UHFFFAOYSA-N methanolate;titanium(3+) Chemical compound [Ti+3].[O-]C.[O-]C.[O-]C JDQLUYWHCUWSJE-UHFFFAOYSA-N 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Description
例えば、特許文献1及び2には、第3級アミノアルコキシドを配位子としたコバルト化合物が報告されている。また、特許文献3には、第1級アミノアルコキシドを配位子としたコバルト化合物が報告されている。
本発明は、上記のような問題を解決するためになされたものであり、融点が低く液体の状態で輸送ができ、低温で分解させることができ、しかも蒸気圧が大きく気化させ易いコバルト化合物及びそれを用いた薄膜形成用原料を提供することを目的とする。
また、本発明は、良質なコバルト含有薄膜を生産性良く製造することができる薄膜の製造方法を提供することを目的とする。
すなわち、本発明は、下記一般式(I):
また、本発明は、上記のコバルト化合物を含有する薄膜形成用原料である。
さらに、本発明は、上記の薄膜形成用原料を気化させることにより、コバルト化合物を含有する蒸気を得る工程と、前記蒸気を基体と接触させることにより、前記コバルト化合物を分解及び/又は化学反応させて前記基体上に薄膜を形成する工程とを含む薄膜の製造方法である。
また、本発明によれば、良質なコバルト含有薄膜を生産性良く製造することができる薄膜の製造方法を提供することができる。
上記のような構造を有するコバルト化合物であれば、融点が低く液体の状態で輸送ができ、低温で分解させることができ、しかも蒸気圧が大きく気化させ易くすることができる。
また、本発明の薄膜形成用原料は、後述するように、有機溶剤及び/又は求核性試薬を更に含有してもよい。
上記の輸送供給方法としては、気相薄膜形成用原料を原料容器中で加熱及び/又は減圧することによって気化させ、必要に応じて用いられるアルゴン、窒素、ヘリウムなどのキャリアガスと共に、基体が設置された成膜チャンバー内へと供給する気体輸送法;気相薄膜形成用原料を液体の状態で気化室まで輸送し、気化室で加熱及び/又は減圧することによって気化させて、基体が設置された成膜チャンバー内へと供給する液体輸送法がある。
また、Rdで表される炭素数2〜18の分岐してもよいアルキレン基とは、グリコールにより与えられる基であり、該グリコールとしては、例えば、1,2−エタンジオール、1,2−プロパンジオール、1,3−プロパンジオール、1,3−ブタンジオール、2,4−ヘキサンジオール、2,2−ジメチル−1,3−プロパンジオール、2,2−ジエチル−1,3−プロパンジオール、2,2−ジエチル−1,3−ブタンジオール、2−エチル−2−ブチル−1,3−プロパンジオール、2,4−ペンタンジオール、2−メチル−1,3−プロパンジオール、1−メチル−2,4−ペンタンジオールなどが挙げられる。
また、Rg、Rh、Rj及びRkで表される炭素数1〜4のアルキル基としては、メチル、エチル、プロピル、イソプロピル、ブチル、第2級ブチル、第3級ブチル、イソブチルが挙げられる。
また、Ra、Rb、Rc、Re、Rf、Rg及びRjで表される基としては、前記のチタニウムなどを金属種として有するプレカーサで例示した基が挙げられる。
求核性試薬の使用量は、プレカーサ1モルに対して、通常0.1モル〜10モル、好ましくは1〜4モルの範囲で使用される。
また、薄膜形成用原料中の水分は、薄膜形成用原料中でのパーティクル発生や、薄膜形成中におけるパーティクル発生の原因となるので、プレカーサ、有機溶剤及び求核性試薬については、それぞれの水分の低減のために、使用の際に予め出来る限り水分を取り除いた方がよい。プレカーサ、有機溶剤及び求核性試薬それぞれの水分量は、10ppm以下が好ましく、1ppm以下が更に好ましい。
反応温度としては、本発明のコバルト化合物などが充分に反応する温度である100℃以上が好ましく、100℃〜400℃がより好ましい。
反応圧力としては、熱CVDや光CVDの場合、大気圧〜10Paが好ましく、プラズマを使用する場合は、2000Pa〜10Paが好ましい。
堆積速度は、原料の供給条件(気化温度、気化圧力)、反応温度、反応圧力によって制御することができる。堆積速度は、大きすぎると、得られる薄膜の特性が悪化する場合があり、小さすぎると、生産性に問題を生じる場合がある。そのため、堆積速度は、0.01〜5000nm/分が好ましく、0.1〜1000nm/分がより好ましい。また、ALD法の場合は、所望の膜厚が得られるようにサイクルの回数で制御すればよい。
200mLの4つ口フラスコに、塩化コバルト(II)10.8g(0.079mol)、及びテトラヒドロフラン55.1gを仕込み、室温下で撹拌した。その中に、1−(エチル(メチル)アミノ)ブタン−2−オールを用いて調製して得たナトリウムアルコキシド25.6g(0.167mol)をテトラヒドロフラン48.6gで希釈した溶液を氷冷下で滴下した。滴下終了後、混合液を室温下で21時間撹拌し、トルエン69.7gを加えて撹拌した後、ろ過を行った。得られたろ液から溶媒を除去し、残渣をバス温度205℃、圧力40Pa、塔頂温度155℃で蒸留して、暗紫色粘性液体である目的物(化合物No.7)を得た。収量は8.23g、収率は34%であった。
コバルト:19.1質量%(理論値18.5質量%)
C:51.3質量%、H:10.3質量%、N:8.5質量%(理論値C:52.7質量%、H:10.1質量%、N:8.8質量%)
塩素:10ppm未満
100mLの3つ口フラスコに、塩化コバルト(II)1.13g(8.27mmol)、及びテトラヒドロフラン15.3gを仕込み、室温下で撹拌した。その中に、1−(エチル(メチル)アミノ)−3−メチルブタン−2−オールを用いて調製して得たナトリウムアルコキシド2.90g(17.3mmol)をテトラヒドロフラン18.0gで希釈した溶液を氷冷下で滴下した。滴下終了後、混合液を室温下で21時間撹拌し、ろ過を行った。得られたろ液から溶媒を除去し、残渣をバス温度145℃、圧力25Pa、塔頂温度107℃で蒸留して、濃紫色粘性液体である目的物(化合物No.12)を得た。収量は0.42g、収率は14%であった。
コバルト:17.4質量%(理論値16.7質量%)
C:55.9質量%、H:10.9質量%、N:7.8質量%(理論値C:55.3質量%、H:10.4質量%、N:8.1質量%)
塩素:10ppm未満
100mLの3つ口フラスコに、ビス(ビス(トリメチルシリル)アミノ)コバルト(II)1.00g(2.63mmol)及びトルエン10gを仕込み、その中に1−ジエチルアミノ)−3−メチルブタン−2−オール0.83g(5.26mmol)を室温下で滴下した。滴下終了後、混合液を室温下で20時間撹拌した。バス温度110℃、減圧下で溶媒及び副生成物であるシラザン化合物を除去して濃紫色粘性液体である目的物(化合物No.14)を得た。収量は0.75g、収率は74%であった。
コバルト:16.2質量%(理論値15.7質量%)
C:57.5質量%、H:10.4質量%、N:7.9質量%(理論値C:57.6質量%、H:10.7質量%、N:7.5質量%)
100mLの3つ口フラスコに、ビス(ビス(トリメチルシリル)アミノ)コバルト(II)1.00g(2.63mmol)及びトルエン10gを仕込み、その中に1−(エチル(メチル)アミノ)−4−メチルペンタン−2−オール0.87g(5.26mmol)を室温下で滴下した。滴下終了後、混合液を室温下で20時間撹拌した。バス温度110℃、減圧下で溶媒及び副生成物であるシラザン化合物を除去して濃紫色粘性液体である目的物(化合物No.17)を得た。収量は0.80g、収率は81%であった。
コバルト:15.4質量%(理論値15.7質量%)
C:57.9質量%、H:10.6質量%、N:7.1質量%(理論値C:57.6質量%、H:10.7質量%、N:7.5質量%)
200mLの3つ口フラスコに、塩化コバルト(II)3.95g(30.4mmol)、及びテトラヒドロフラン29.1gを仕込み、室温下で撹拌した。その中に、1−(エチル(メチル)アミノ)−3−メチルペンタン−2−オールを用いて調製して得たナトリウムアルコキシド10.7g(59.3mmol)をテトラヒドロフラン28.9gで希釈した溶液を氷冷下で滴下した。滴下終了後、混合液を室温下で18時間撹拌し、ろ過を行った。得られたろ液から溶媒を除去し、残渣をバス温度165℃、圧力65Pa、塔頂温度147℃で蒸留して、紫色粘性液体である目的物(化合物No.22)を得た。収量は1.42g、収率は13%であった。
コバルト:15.2質量%(理論値15.7質量%)
C:58.0質量%、H:10.8質量%、N:7.6質量%(理論値C:57.6質量%、H:10.7質量%、N:7.5質量%)
塩素:10ppm未満
100mLの3つ口フラスコに、塩化コバルト(II)2.90g(0.022mol)、及びテトラヒドロフラン17.6gを仕込み、室温下で撹拌した。その中に、1−(エチル(メチル)アミノ)−3,3−ジメチルブタン−2−オールを用いて調製して得たナトリウムアルコキシド7.97g(0.044mol)をテトラヒドロフラン15.6gで希釈した溶液を氷冷下で滴下した。滴下終了後、混合液を室温下で20時間撹拌し、ろ過を行った。得られたろ液から溶媒を除去し、残渣をバス温度135℃、圧力17Paの条件下で蒸留して、暗赤色固体(融点69℃)である目的物(化合物No.27)を得た。収量は3.39g、収率は41%であった。
コバルト:15.9質量%(理論値15.7質量%)
C:57.9質量%、H:10.4質量%、N:7.6質量%(理論値C:57.6質量%、H:10.7質量%、N:7.5質量%)
塩素:10ppm未満
200mLの3つ口フラスコに、塩化コバルト(II)5.95g(45.8mmol)、及びテトラヒドロフラン26.8gを仕込み、室温下で撹拌した。その中に、1−(ジエチルアミノ)−3,3−ジメチルブタン−2−オールを用いて調製して得たナトリウムアルコキシド17.2g(88.3mmol)をテトラヒドロフラン22.9gで希釈した溶液を氷冷下で滴下した。滴下終了後、混合液を室温下で16時間撹拌し、ろ過を行った。得られたろ液から溶媒を除去し、残渣をバス温度150℃、圧力40Pa、塔頂温度115℃で蒸留して、赤紫色粘性液体である目的物(化合物No.29)を得た。収量は7.59g、収率は43%であった。
コバルト:14.4質量%(理論値14.6質量%)
C:59.7質量%、H:10.7質量%、N:7.3質量%(理論値C:59.5質量%、H:11.0質量%、N:6.9質量%)
塩素:10ppm未満
比較例1として下記の比較化合物No.1、比較例2として下記の比較化合物No.2を、周知の方法に準じてそれぞれ製造した。
また、上記の実施例及び比較例で得られたコバルト化合物について、DSC測定装置を用いて熱分解が発生する温度(熱分解発生温度)を測定することにより、コバルト化合物の熱安定性を評価した。
<常圧TG−DTAの測定条件>
Ar流量:100mL/分
昇温速度:10℃/分
サンプル量:約10mg
<減圧TG−DTAの測定条件>
圧力:10Torr
Ar流量:50mL/分
昇温速度:10℃/分
サンプル量:約10mg
上記の評価結果を表1に示す。
また、比較例2のコバルト化合物は、熱分解させるために300℃の加熱が必要であるのに対し、実施例1〜7のコバルト化合物は、比較例2のコバルト化合物よりも20〜30%程度も低い温度で分解させることができることを確認した。その中でも、実施例2及び7のコバルト化合物は、230℃という特に低い温度で分解させることができることがわかった。
さらに、実施例1〜7のコバルト化合物は、サンプルの重量が50%減少した際の温度が低いため、高い蒸気圧を示す薄膜形成用原料であると言える。
実施例1〜7のコバルト化合物を薄膜形成用原料として用い、図1に示すCVD装置において、熱CVD法により、下記の条件にてCu基板及びSiO2基板上に酸化コバルト薄膜を形成した。
<条件>
原料容器温度:70℃
原料容器内圧力:100Pa
反応温度(基体温度):300℃
反応性ガス:なし
キャリアガス:アルゴンガス
<工程>
気化させた薄膜形成用原料の蒸気を成膜チャンバーに供給し、成膜チャンバー内の圧力100Paで8000秒間堆積させた。
また、本発明によれば、良質なコバルト含有薄膜を生産性良く製造することができる薄膜の製造方法を提供することができる。
Claims (3)
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JP2014100607A JP6249875B2 (ja) | 2014-05-14 | 2014-05-14 | コバルト化合物、薄膜形成用原料及び薄膜の製造方法 |
KR1020167030824A KR102376087B1 (ko) | 2014-05-14 | 2015-03-31 | 코발트 화합물, 박막 형성용 원료 및 박막의 제조 방법 |
US15/306,807 US20170050998A1 (en) | 2014-05-14 | 2015-03-31 | Cobalt compound, thin film-forming raw material, and method for producing thin film |
EP15792769.0A EP3144313A4 (en) | 2014-05-14 | 2015-03-31 | Cobalt compound, raw material for forming thin film, and method for producing thin film |
PCT/JP2015/060131 WO2015174153A1 (ja) | 2014-05-14 | 2015-03-31 | コバルト化合物、薄膜形成用原料及び薄膜の製造方法 |
TW104111952A TWI652275B (zh) | 2014-05-14 | 2015-04-14 | 鈷化合物、薄膜形成用原料及薄膜之製造方法 |
IL248518A IL248518A0 (en) | 2014-05-14 | 2016-10-26 | Cobalt compound, raw material forming a thin layer and method for producing a thin layer |
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KR (1) | KR102376087B1 (ja) |
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JPWO2019044448A1 (ja) * | 2017-08-30 | 2020-08-13 | 株式会社Adeka | 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
KR20210070318A (ko) * | 2018-10-04 | 2021-06-14 | 가부시키가이샤 아데카 | 원자층 퇴적법용 박막 형성용 원료, 박막 형성용 원료, 박막의 제조 방법 및 화합물 |
EP3901326A4 (en) * | 2018-12-17 | 2022-09-07 | Adeka Corporation | BASE MATERIAL FOR THE PRODUCTION OF A THIN FILM FOR ATOMIC LAYER DEPOSITION, PROCESS FOR THE PRODUCTION OF A THIN FILM AND ALKOXIDE COMPOUND |
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CN1914150A (zh) * | 2004-02-18 | 2007-02-14 | 株式会社艾迪科 | 烷氧基金属化合物、薄膜形成用原料和薄膜的制造方法 |
KR100593265B1 (ko) | 2004-09-02 | 2006-06-26 | 한국기계연구원 | 플라즈마 아크방전을 이용한 나노분말 제조공정 |
JP4632765B2 (ja) * | 2004-10-21 | 2011-02-16 | 株式会社Adeka | アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
JP4795006B2 (ja) | 2005-11-29 | 2011-10-19 | アイシン・エィ・ダブリュ株式会社 | ブレーキ用油圧サーボ、及びそれを備えた自動変速機 |
KR100675983B1 (ko) | 2006-03-06 | 2007-01-30 | 한국화학연구원 | 신규의 코발트 아미노알콕사이드 화합물 및 그 제조 방법 |
US8871628B2 (en) * | 2009-01-21 | 2014-10-28 | Veeco Ald Inc. | Electrode structure, device comprising the same and method for forming electrode structure |
JP5690684B2 (ja) * | 2011-08-02 | 2015-03-25 | 株式会社Adeka | アルコキシド化合物 |
JP2013216614A (ja) * | 2012-04-09 | 2013-10-24 | Adeka Corp | コバルトアルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 |
US20130330473A1 (en) * | 2012-06-11 | 2013-12-12 | Wayne State University | Atomic Layer Deposition of Transition Metal Thin Films Using Boranes as the Reducing Agent |
CN104470892B (zh) * | 2012-11-13 | 2017-05-17 | 株式会社艾迪科 | 金属醇盐化合物、薄膜形成用原料、薄膜的制造方法和醇化合物 |
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IL248518A0 (en) | 2016-12-29 |
TWI652275B (zh) | 2019-03-01 |
JP2015218116A (ja) | 2015-12-07 |
WO2015174153A1 (ja) | 2015-11-19 |
KR20170007277A (ko) | 2017-01-18 |
EP3144313A1 (en) | 2017-03-22 |
EP3144313A4 (en) | 2017-12-06 |
TW201604200A (zh) | 2016-02-01 |
KR102376087B1 (ko) | 2022-03-17 |
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