JPWO2020006459A5 - - Google Patents

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Publication number
JPWO2020006459A5
JPWO2020006459A5 JP2020572708A JP2020572708A JPWO2020006459A5 JP WO2020006459 A5 JPWO2020006459 A5 JP WO2020006459A5 JP 2020572708 A JP2020572708 A JP 2020572708A JP 2020572708 A JP2020572708 A JP 2020572708A JP WO2020006459 A5 JPWO2020006459 A5 JP WO2020006459A5
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JP
Japan
Prior art keywords
die
integrated circuit
circuit
heat sink
chip
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Granted
Application number
JP2020572708A
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English (en)
Japanese (ja)
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JP2021530103A5 (https=
JP2021530103A (ja
JP7665338B2 (ja
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Priority claimed from US16/024,670 external-priority patent/US10629512B2/en
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Publication of JP2021530103A publication Critical patent/JP2021530103A/ja
Publication of JP2021530103A5 publication Critical patent/JP2021530103A5/ja
Publication of JPWO2020006459A5 publication Critical patent/JPWO2020006459A5/ja
Application granted granted Critical
Publication of JP7665338B2 publication Critical patent/JP7665338B2/ja
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JP2020572708A 2018-06-29 2019-06-28 インチップヒートシンクを有する集積回路ダイ Active JP7665338B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/024,670 2018-06-29
US16/024,670 US10629512B2 (en) 2018-06-29 2018-06-29 Integrated circuit die with in-chip heat sink
PCT/US2019/039894 WO2020006459A1 (en) 2018-06-29 2019-06-28 Integrated circuit die with in-chip heat sink

Publications (4)

Publication Number Publication Date
JP2021530103A JP2021530103A (ja) 2021-11-04
JP2021530103A5 JP2021530103A5 (https=) 2022-06-10
JPWO2020006459A5 true JPWO2020006459A5 (https=) 2022-06-10
JP7665338B2 JP7665338B2 (ja) 2025-04-21

Family

ID=67441623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020572708A Active JP7665338B2 (ja) 2018-06-29 2019-06-28 インチップヒートシンクを有する集積回路ダイ

Country Status (6)

Country Link
US (1) US10629512B2 (https=)
EP (1) EP3815135B1 (https=)
JP (1) JP7665338B2 (https=)
KR (1) KR102683078B1 (https=)
CN (1) CN112352311A (https=)
WO (1) WO2020006459A1 (https=)

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US11133263B2 (en) 2019-09-17 2021-09-28 Intel Corporation High-density interconnects for integrated circuit packages
US11460499B2 (en) * 2019-09-17 2022-10-04 Intel Corporation Dual sided thermal management solutions for integrated circuit packages
US11488887B1 (en) 2020-03-05 2022-11-01 Xilinx, Inc. Thermal enablement of dies with impurity gettering
US11769752B2 (en) 2020-07-24 2023-09-26 Micron Technology, Inc. Stacked semiconductor die assemblies with substrate heat sinks and associated systems and methods
CN116420229A (zh) * 2021-02-19 2023-07-11 华为数字能源技术有限公司 封装结构、动力电气控制系统及制造方法
US11246211B1 (en) 2021-03-01 2022-02-08 Xilinx, Inc. Micro device with through PCB cooling
US12154838B2 (en) * 2021-08-27 2024-11-26 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of forming
US12355024B2 (en) 2021-11-17 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Heterogenous integration scheme for III-V/Si and Si CMOS integrated circuits
US12315781B2 (en) 2021-12-28 2025-05-27 Xilinx, Inc. Heat spreader for a semiconductor package
CN115881659A (zh) * 2022-12-07 2023-03-31 成都海光微电子技术有限公司 一种芯片
US20250118706A1 (en) * 2023-10-05 2025-04-10 Advanced Micro Devices, Inc. Chip package with a thermal carrier

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JP3004578B2 (ja) * 1995-05-12 2000-01-31 財団法人工業技術研究院 熱放散増強のための多熱導伝路とパッケージ統合性及び信頼性向上のための縁の周りを囲むキャップからなる集積回路パッケージ
JPH09213696A (ja) * 1996-02-02 1997-08-15 Hitachi Ltd 半導体装置
US6433360B1 (en) 1999-01-15 2002-08-13 Xilinx, Inc. Structure and method of testing failed or returned die to determine failure location and type
US6849940B1 (en) 2000-11-20 2005-02-01 Ati Technologies, Inc. Integrated circuit package for the transfer of heat generated by the inte circuit and method of fabricating same
US20030038344A1 (en) * 2001-08-24 2003-02-27 Mcnc Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
US6822325B2 (en) 2002-08-01 2004-11-23 Altera Corporation Isolating temperature sensitive components from heat sources in integrated circuits
JP3976089B2 (ja) * 2002-08-09 2007-09-12 株式会社リコー 半導体集積回路装置及びその製造方法
JP2006140326A (ja) * 2004-11-12 2006-06-01 Toshiba Corp 半導体装置
JP4688526B2 (ja) * 2005-03-03 2011-05-25 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
FR2901407A1 (fr) 2006-05-18 2007-11-23 Commissariat Energie Atomique Circuit integre sur substrat du type semiconducteur sur isolant, a evacuation laterale de la chaleur
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JP5849478B2 (ja) * 2011-07-11 2016-01-27 富士通セミコンダクター株式会社 半導体装置および試験方法
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