JPWO2018087990A1 - ジアミン化合物、それを用いた耐熱性樹脂および樹脂組成物 - Google Patents
ジアミン化合物、それを用いた耐熱性樹脂および樹脂組成物 Download PDFInfo
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- JPWO2018087990A1 JPWO2018087990A1 JP2017545773A JP2017545773A JPWO2018087990A1 JP WO2018087990 A1 JPWO2018087990 A1 JP WO2018087990A1 JP 2017545773 A JP2017545773 A JP 2017545773A JP 2017545773 A JP2017545773 A JP 2017545773A JP WO2018087990 A1 JPWO2018087990 A1 JP WO2018087990A1
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- -1 Diamine compound Chemical class 0.000 title claims abstract description 96
- 239000011342 resin composition Substances 0.000 title claims abstract description 83
- 229920006015 heat resistant resin Polymers 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000010410 layer Substances 0.000 claims abstract description 45
- 239000011229 interlayer Substances 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims description 83
- 239000011347 resin Substances 0.000 claims description 83
- 125000003118 aryl group Chemical group 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 66
- 150000001875 compounds Chemical class 0.000 claims description 65
- 125000000962 organic group Chemical group 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 125000001931 aliphatic group Chemical group 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 52
- 229920001721 polyimide Polymers 0.000 claims description 42
- 239000004642 Polyimide Substances 0.000 claims description 40
- 239000002243 precursor Substances 0.000 claims description 35
- 239000000126 substance Substances 0.000 claims description 28
- 125000004432 carbon atom Chemical group C* 0.000 claims description 25
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 25
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- 239000011737 fluorine Substances 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 23
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 125000005843 halogen group Chemical group 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 125000002723 alicyclic group Chemical group 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 125000002947 alkylene group Chemical group 0.000 claims description 11
- 239000004952 Polyamide Substances 0.000 claims description 10
- 125000004185 ester group Chemical group 0.000 claims description 10
- 125000005462 imide group Chemical group 0.000 claims description 10
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 10
- 229920002647 polyamide Polymers 0.000 claims description 10
- 229920002577 polybenzoxazole Polymers 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims description 9
- 125000004849 alkoxymethyl group Chemical group 0.000 claims description 9
- 125000003368 amide group Chemical group 0.000 claims description 9
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000004693 Polybenzimidazole Substances 0.000 claims description 3
- 238000010828 elution Methods 0.000 claims description 3
- 229920002480 polybenzimidazole Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 2
- 150000004985 diamines Chemical class 0.000 abstract description 28
- 230000001681 protective effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 153
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 88
- 239000000243 solution Substances 0.000 description 44
- 230000015572 biosynthetic process Effects 0.000 description 40
- 238000003786 synthesis reaction Methods 0.000 description 39
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 34
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 33
- 239000000203 mixture Substances 0.000 description 32
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 23
- 239000007787 solid Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 22
- 239000002253 acid Substances 0.000 description 21
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 20
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 19
- 150000003949 imides Chemical group 0.000 description 19
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 16
- 239000002244 precipitate Substances 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- 238000006798 ring closing metathesis reaction Methods 0.000 description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 13
- 238000001914 filtration Methods 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 12
- 125000004427 diamine group Chemical group 0.000 description 12
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 12
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000002981 blocking agent Substances 0.000 description 9
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 8
- 238000001723 curing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000002148 esters Chemical class 0.000 description 8
- 125000003709 fluoroalkyl group Chemical group 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000006116 polymerization reaction Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000002966 varnish Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 6
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N acetaldehyde dimethyl acetal Natural products COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 6
- 150000008065 acid anhydrides Chemical class 0.000 description 6
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 6
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 238000007865 diluting Methods 0.000 description 6
- 229940116333 ethyl lactate Drugs 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 6
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 125000005011 alkyl ether group Chemical group 0.000 description 5
- 150000001408 amides Chemical class 0.000 description 5
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- 239000003054 catalyst Substances 0.000 description 5
- 238000006358 imidation reaction Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
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- MNUOZFHYBCRUOD-UHFFFAOYSA-N 3-hydroxyphthalic acid Chemical compound OC(=O)C1=CC=CC(O)=C1C(O)=O MNUOZFHYBCRUOD-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- NIDNOXCRFUCAKQ-UHFFFAOYSA-N bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2C(O)=O NIDNOXCRFUCAKQ-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
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- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
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- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 4
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 4
- 239000011976 maleic acid Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
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- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- LAGVOJJKZPIRMS-UHFFFAOYSA-N (1,2,2,6,6-pentamethylpiperidin-3-yl) 2-methylprop-2-enoate Chemical compound CN1C(C)(C)CCC(OC(=O)C(C)=C)C1(C)C LAGVOJJKZPIRMS-UHFFFAOYSA-N 0.000 description 2
- AJOJTMNIQSTBAP-UHFFFAOYSA-N (1,2,2,6,6-pentamethylpiperidin-3-yl) prop-2-enoate Chemical compound CN1C(C)(C)CCC(OC(=O)C=C)C1(C)C AJOJTMNIQSTBAP-UHFFFAOYSA-N 0.000 description 2
- SEOSQBZZSQXYDO-UHFFFAOYSA-N (2,2,6,6-tetramethylpiperidin-1-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)ON1C(C)(C)CCCC1(C)C SEOSQBZZSQXYDO-UHFFFAOYSA-N 0.000 description 2
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 2
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
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- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
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- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 2
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- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
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- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- DDDGGJDPYJAFSW-UHFFFAOYSA-N nitroformyl chloride Chemical class [O-][N+](=O)C(Cl)=O DDDGGJDPYJAFSW-UHFFFAOYSA-N 0.000 description 1
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- 239000002798 polar solvent Substances 0.000 description 1
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- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
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- 230000002194 synthesizing effect Effects 0.000 description 1
- OAXARSVKYJPDPA-UHFFFAOYSA-N tert-butyl 4-prop-2-ynylpiperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(CC#C)CC1 OAXARSVKYJPDPA-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- DXNCZXXFRKPEPY-UHFFFAOYSA-N tridecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCC(O)=O DXNCZXXFRKPEPY-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
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- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C237/00—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups
- C07C237/28—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atom of at least one of the carboxamide groups bound to a carbon atom of a non-condensed six-membered aromatic ring of the carbon skeleton
- C07C237/40—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atom of at least one of the carboxamide groups bound to a carbon atom of a non-condensed six-membered aromatic ring of the carbon skeleton having the nitrogen atom of the carboxamide group bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C235/00—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by oxygen atoms
- C07C235/02—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by oxygen atoms having carbon atoms of carboxamide groups bound to acyclic carbon atoms and singly-bound oxygen atoms bound to the same carbon skeleton
- C07C235/04—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by oxygen atoms having carbon atoms of carboxamide groups bound to acyclic carbon atoms and singly-bound oxygen atoms bound to the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C235/18—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by oxygen atoms having carbon atoms of carboxamide groups bound to acyclic carbon atoms and singly-bound oxygen atoms bound to the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the singly-bound oxygen atoms further bound to a carbon atom of a six-membered aromatic ring, e.g. phenoxyacetamides
- C07C235/24—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by oxygen atoms having carbon atoms of carboxamide groups bound to acyclic carbon atoms and singly-bound oxygen atoms bound to the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the singly-bound oxygen atoms further bound to a carbon atom of a six-membered aromatic ring, e.g. phenoxyacetamides having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C237/00—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups
- C07C237/02—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atoms of the carboxamide groups bound to acyclic carbon atoms of the carbon skeleton
- C07C237/04—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atoms of the carboxamide groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/08—Polyhydrazides; Polytriazoles; Polyaminotriazoles; Polyoxadiazoles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
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Abstract
Description
[1]一般式(1)で表される、ジアミン化合物。
p、qはそれぞれ独立に0〜3の範囲内の整数である。)
[2]一般式(1)で表され、前記一般式(1)におけるR1、R2がそれぞれ独立に一般式(2)または一般式(3)で表される2価の脂肪族基である、[1]に記載のジアミン化合物。
p、qはそれぞれ独立に0〜3の範囲内の整数である。)
[3]一般式(1)で表され、前記一般式(1)におけるR3が式(4)で表される二価の有機基であり、前記一般式(1)におけるR4が式(5)で表される二価の有機基である、[1]または[2]に記載のジアミン化合物。
p、qはそれぞれ独立に0〜3の範囲内の整数である。)
[4][1]〜[3]のいずれかに記載のジアミン化合物に由来する構造を有する耐熱性樹脂。
[5]ポリイミド、ポリアミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール、ポリベンゾチアゾール、それらの前駆体、およびそれらの共重合体、から選ばれる少なくとも1種類を含む、[4]に記載の耐熱性樹脂。
[6][4]または[5]に記載の耐熱性樹脂と、(b)感光性化合物および(c)溶剤を含有することを特徴とする樹脂組成物。
[7]さらに、(d)アルコキシメチル基およびメチロール基のうち少なくともいずれか1つの基を2つ以上有する化合物を含有する、[6]に記載の樹脂組成物。
[8][6]または[7]に記載の樹脂組成物から形成された樹脂シート。
[9][6]または[7]に記載の樹脂組成物を硬化した硬化膜。
[10][8]に記載の樹脂シートを硬化した硬化膜。
[11][6]または[7]に記載の樹脂組成物を基板上に塗布し、または[8]に記載の樹脂シートを基板上にラミネートし、乾燥して樹脂膜を形成する工程と、
マスクを介して露光する工程と、
照射部をアルカリ溶液で溶出または除去して現像する工程と、
および現像後の樹脂膜を加熱処理する工程を含む、硬化膜のレリーフパターンの製造方法。
[12]前記樹脂組成物を基板上に塗布し、乾燥して樹脂膜を形成する工程が、スリットノズルを用いて基板上に塗布する工程を含む、[11]に記載の硬化膜のレリーフパターンの製造方法。
[13][9]または[10]に記載の硬化膜が、パターン化されまたはされないで、駆動回路上の平坦化層および第1電極上の絶縁層のいずれかまたは両方に配置された有機EL表示装置。
[14][9]または[10]に記載の硬化膜が、パターン化されまたはされないで、再配線間の層間絶縁膜として配置された、電子部品または半導体装置。
[15]前記再配線が銅金属配線であり、前記銅金属配線の幅と隣り合う配線同士の間隔が5μm以下である、[14]に記載の電子部品または半導体装置。
[16][9]または[10]に記載の硬化膜が、パターン化されまたはされないで、シリコンチップが配置された封止樹脂基板上に、再配線間の層間絶縁膜として配置された、電子部品または半導体装置。
[17] 前記再配線が銅金属配線であって、更にバンプを介して半導体チップと銅金属配線とを接続している[14]〜[16]の何れかに記載の半導体電子部品または半導体装置。
[18]再配線層が、半導体チップに近づくにつれ、金属配線の幅と隣り合う配線同士の間隔が狭くなる[14]〜[17]の何れかに記載の半導体電子部品または半導体装置。
[19]再配線間に配置された層間絶縁膜の厚みが、半導体チップに対して近づくにつれ、薄くなる[14]〜[18]の何れかに記載の半導体電子部品または半導体装置。
[20][9]または[10]に記載の硬化膜を、仮貼り材料が配置された支持基板上に再配線間の層間絶縁膜として配置する工程と、
その上にシリコンチップと封止樹脂を配置する工程と、
その後、仮貼り材料が配置された支持基板と再配線を剥離する工程を含む、
電子部品または半導体装置の製造方法。
本発明は上記一般式(1)で表されるジアミン化合物である。一般式(1)で表される、ジアミン化合物において、R1、R2は2価の脂肪族基を示す。
R3〜R6、Aは芳香族基を有する有機基である場合、水酸基を含み、芳香族環上の水素の一部または全部が水酸基で置換されていても差し支えない。p、qはそれぞれ独立に0〜3の範囲内の整数である。
柔軟性の観点から、R11、R12は、水素、または炭素数1〜2のアルキル基であることが好ましい。
ここで、式(4)の酸素はR1の側に、式(5)の酸素はR2の側に好ましく結合する。
一般式(1)で表されるジアミン化合物は、公知のジアミン化合物の製造方法に倣って製造することができる。特に限定はされないが、下記方法をとることができる。
p、qはそれぞれ独立に0〜3の範囲内の整数である。)
R3が式(4)で表される二価の有機基であり、前記一般式(1)におけるR4が式(5)で表される場合については、以下の方法により製造することが好ましい。
p、qは0〜3の範囲内の整数である。)
反応溶媒としては、例えばメチルイソブチルケトン、ジイソブチルケトン、シクロヘキサノン、メチルエチルケトン、アセトンなどのケトン類、酢酸エチル、酢酸ブチル、酢酸イソブチルなどのエステル類、テトラヒドロフラン、ジメトキシエタン、ジエトキシエタン、ジブチルエーテル、ジエチレングリコールジメチルエーテルなどのエーテル類を挙げることができる。このうち溶解性と汎用性の点から、アセトンを使用することがより好ましい。これらは単独でも2種類以上を混合して使用することもできる。反応溶媒の使用量はジアミン化合物100質量部に対して、溶解性の点から、100〜5000質量部の範囲で使用することが好ましい。
本発明の耐熱性樹脂は、一般式(1)に記載のジアミン化合物に由来する構造を有する、耐熱性樹脂であり、また耐熱性樹脂の前駆体であってもよい。
上記一般式(6)中、X1、X4は炭素数2以上の2価〜6価の有機基を示し、酸の構造成分を表している。X1、X4は、テレフタル酸、イソフタル酸、ジフェニルエーテルジカルボン酸、ナフタレンジカルボン酸、ビス(カルボキシフェニル)プロパンなどの芳香族ジカルボン酸、シクロブタンジカルボン酸、シクロヘキサンジカルボン酸、マロン酸、ジメチルマロン酸、エチルマロン酸、イソプロピルマロン酸、ジ−n−ブチルマロン酸、スクシン酸、テトラフルオロスクシン酸、メチルスクシン酸、2,2−ジメチルスクシン酸、2,3−ジメチルスクシン酸、ジメチルメチルスクシン酸、グルタル酸、ヘキサフルオログルタル酸、2−メチルグルタル酸、3−メチルグルタル酸、2,2−ジメチルグルタル酸、3,3−ジメチルグルタル酸、3−エチル−3−メチルグルタル酸、アジピン酸、オクタフルオロアジピン酸、3−メチルアジピン酸、オクタフルオロアジピン酸、ピメリン酸、2,2,6,6−テトラメチルピメリン酸、スベリン酸、ドデカフルオロスベリン酸、アゼライン酸、セバシン酸、ヘキサデカフルオロセバシン酸、1,9−ノナン二酸、ドデカン二酸、トリデカン二酸、テトラデカン二酸、ペンタデカン二酸、ヘキサデカン二酸、ヘプタデカン二酸、オクタデカン二酸、ノナデカン二酸、エイコサン二酸、ヘンエイコサン二酸、ドコサン二酸、トリコサン二酸、テトラコサン二酸、ペンタコサン二酸、ヘキサコサン二酸、ヘプタコサン二酸、オクタコサン二酸、ノナコサン二酸、トリアコンタン二酸、ヘントリアコンタン二酸、ドトリアコンタン二酸、ジグリコール酸などの脂肪族ジカルボン酸や、さらに下記一般式で示されるジカルボン酸や、トリメリット酸、トリメシン酸などのトリカルボン酸、これらの芳香族環や炭化水素の水素原子の一部を、炭素数1〜10のアルキル基やフルオロアルキル基、ハロゲン原子などで置換されているものや、―S―、―SO―、―SO2―、―NH―、―NCH3―、―N(CH2CH3)―、―N(CH2CH2CH3)―、―N(CH(CH3)2)―、―COO―、―CONH―、―OCONH―、または―NHCONH―などの結合を含んでいるものを由来とする構造である。
この中でも、X1、X4が、芳香族を有するジカルボン酸を由来とする構造は、熱硬化時に閉環が起こりにくいため、膜収縮による応力上昇を抑え、密着性を高められるため好ましい。
本発明において、肪族基を有するジアミンは、アルキレン基、およびアルキルエーテル基から選ばれる少なくとも1つを有する有機基であって、これらは、主鎖が直鎖となっている非環化構造である方が、柔軟性および伸縮性が得られ、硬化膜としたときに低応力化、高伸度化を達成できるため好ましい
アルキルエーテルの中でも、テトラメチレンエーテル基は耐熱性に優れるため、信頼性評価後の金属密着性を付与できるため好ましい。例としては、RT−1000、HE−1000、HT−1100、HT−1700、(以上商品名、HUNTSMAN(株)製)などがあげられるが、これに限定されない。
ジカルボキシフェニル)エーテル二無水物、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン二無水物、3,3’,4,4’−ジフェニルスルホンテトラカルボン酸二無水物、9,9−ビス(3,4−ジカルボキシフェニル)フルオレン酸二無水物、9,9−ビス{4−(3,4−ジカルボキシフェノキシ)フェニル}フルオレン酸二無水物、ブタンテトラカルボン酸二無水物、1,2,3,4−シクロペンタンテトラカルボン酸二無水物、1,2,4,5−シクロヘキサンテトラカルボン酸二無水物、1,3,3a,4,5,9b−ヘキサヒドロ−5(テトラヒドロ−2,5−ジオキソ−3−フラニル)ナフト[1,2−c]フラン−1,3−ジオンが好ましい。これらは単独でまたは2種以上を組み合わせて使用される。
上記構造の中でも、耐熱性と伸度向上を両立する点から、nは1〜2、mは3〜7であることが好ましい。
次に、本発明の樹脂組成物を用いた、インダクタ装置のコイル部品への応用例3について図面を用いて説明する。図4本発明の絶縁膜を有するコイル部品の断面図である。図3に示すように、基板12には絶縁膜13、その上にパターンとして絶縁膜14が形成される。基板12としてはフェライト等が用いられる。本発明の樹脂組成物は絶縁膜13と絶縁膜14のどちらに使用してもよい。このパターンの開口部に金属(Cr、Ti等)膜15が形成され、この上に金属配線(Ag、Cu等)16がめっき形成される。金属配線16(Ag、Cu等)はスパイラル上に形成されている。13〜16の工程を複数回繰り返し、積層させることでコイルとしての機能を持たせることができる。最後に金属配線16(Ag、Cu等)は金属配線17(Ag、Cu等)によって電極18に接続され、封止樹脂19により封止される。
本発明の樹脂組成物は有機EL表示装置にも好適に用いられる。該有機EL表示装置は、基板上に、駆動回路、平坦化層、第1電極、絶縁層、発光層および第2電極を有し、平坦化層および/または絶縁層が本発明の硬化膜からなる。有機EL発光材料は水分による劣化を受けやすく、発光画素の面積に対する発光部の面積率低下など、悪影響を与える場合があるが、本発明の硬化膜は吸水率が低いため、安定した駆動および発光特性が得られる。アクティブマトリックス型の表示装置を例に挙げると、ガラスや各種プラスチックなどの基板上に、TFTと、TFTの側方部に位置しTFTと接続された配線とを有し、その上に凹凸を覆うようにして平坦化層を有し、さらに平坦化層上に表示素子が設けられている。表示素子と配線とは、平坦化層に形成されたコンタクトホールを介して接続される。
かかる絶縁層29、平坦化層30および/または絶縁層34は、前述の通り本発明の樹脂組成物または樹脂シートからなる感光性樹脂膜を形成する工程、前記感光性樹脂膜を露光する工程、露光した感光性樹脂膜を現像する工程および現像した感光性樹脂膜を加熱処理する工程により形成することができる。これらの工程を有する製造方法より、有機EL表示装置を得ることができる。
耐熱性樹脂の分子量は、GPC(ゲルパーミエーションクロマトグラフィー)装置Waters2690−996(日本ウォーターズ(株)製)を用い、展開溶媒をN−メチル−2−ピロリドン(以降NMPと呼ぶ)として測定し、ポリスチレン換算で重量平均分子量(Mw)を計算した。
閉環率の算出は、ワニスをシリコンウエハ上にスピンコートして、120℃で3分間乾燥し、膜厚5μmの塗布膜を得た。さらにこの塗布膜を180℃で10分、または300〜350℃で10分加熱して硬化膜(180℃で加熱した硬化膜(A)、300〜350℃で加熱した硬化膜(B))を得た。これらの硬化膜(A)、および硬化膜(B)の赤外吸収スペクトルを測定し、1050cm−1付近のC−O伸縮振動に起因するピークの吸光度を求めた。硬化膜(B)のポリヒドロキシアミドの閉環率を100%として、硬化膜(A)の閉環率を算出した。
ワニスを6インチのシリコンウエハ上に塗布した。塗布現像装置Mark−7を用い、120℃で3分間プリベークした後の膜厚が11μmとなるようにした。塗布方法はスピンコート法を用いた。プリベークした後、イナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で180℃まで昇温し、180℃で1時間加熱処理を行なった。温度が50℃以下になったところでウエハを取り出し、膜厚を測定後、60℃でレジスト剥離液ST−120(東京応化工業製)の溶剤にそれぞれウエハを30分浸漬した。溶剤から取り出したウエハを純水で洗浄した後、再度膜厚を測定し、その変化率の絶対値が20%を超えるものや硬化膜が剥離したものを不十分(C)、20%以内であって10%を超えるものを可(B)、10%以内であるものをより良好(A)とした。
ワニスを8インチのシリコンウエハ上に、120℃で3分間のプリベーク後の膜厚が11μmとなるように塗布現像装置ACT−8を用いてスピンコート法で塗布およびプリベークした後、イナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で190℃まで昇温し、180℃で1時間加熱処理を行なった。温度が50℃以下になったところでウエハを取り出し、45質量%のフッ化水素酸に5分間浸漬することで、ウエハより樹脂組成物の膜を剥がした。この膜を幅1cm、長さ9cmの短冊状に切断し、テンシロンRTM−100((株)オリエンテック製)を用いて、室温23.0℃、湿度45.0%RH下で引張速度50mm/分で引っ張り、破断点伸度の測定を行なった。測定は1検体につき10枚の短冊について行ない、結果から上位5点の平均値を求めた。破断点伸度の値が、破断点伸度の値が、90%以上のものを非常に良好(A)、70%以上90%未満のものを良好(B)、40%以上70%未満のものを可(C)、40%未満のものを不十分(D)とした。
ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン18.3g(0.05モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに2−(4―ニトロフェノキシ)アセチルクロライド20.41g(0.11モル)をアセトン100mlに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。溶液をロータリーエバポレーターで濃縮し、得られた固体をテトラヒドロフランとエタノールの溶液で再結晶した。
FT−IR/cm−1:3350〜3005、2938、2875、1650、1604,1550、1501、1420、1299、1130、820。
1H−NMR(DMSO):δ ( p p m ):10.3(s、2H)、9.2(s、2H)、8.0(s、2H)、6.5−6.9(m、12H)、4.6(s、4H)、4.2(s、4H)。
ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン18.3g(0.05モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに6−(4―ニトロフェノキシ)ヘキサノイルクロライド26.6g(0.11モル)をアセトン100mlに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。溶液をロータリーエバポレーターで濃縮し、得られた固体をテトラヒドロフランとエタノールの溶液で再結晶した。
FT−IR/cm−1:3350〜3005、2940、2880、1650、1604,1550、1501、1420、1299、1130、820。
1H−NMR(DMSO):δ ( p p m ):10.3(s、2H)、9.2(s、2H)、8.0(s、2H)、6.5−6.9(m、12H)、4.6(s、4H)、3.8(t、4H)、2.5(t、4H)、1.4−1.7(m、12H)。
ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン18.3g(0.05モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに3−(1、3―ジオキソイソインドリンー2−イル)プロパノイルクロライド26.1g(0.11モル)をアセトン100mlに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。溶液をロータリーエバポレーターで濃縮し、得られた固体をテトラヒドロフランとエタノールの溶液で再結晶した。
FT−IR/cm−1:3350〜3005、2943、2900、1650、1604,1550、1501、1420、1299、1130、820。
1H−NMR(DMSO):δ ( p p m ):10.3(s、2H)、9.2(s、2H)、8.0(s、2H)、6.5−6.9(m、4H)、4.6(s、4H)、4.0(m、4H)、2.5(t、4H)。
乾燥窒素気流下、合成例1で得られた(A−1)33.21g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体の(I)を得た。重量平均分子量は32,300であった。
乾燥窒素気流下、合成例2で得られた(A−2)34.63g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体の(II)を得た。重量平均分子量は35,300であった。
乾燥窒素気流下、合成例3で得られた(A−3)25.41g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体の(III)を得た。重量平均分子量は29,400であった。
乾燥窒素気流下、合成例2で得られた(A−2)34.63g(0.05モル)、をNMP100gに溶解させた。ここに、酸A(13.51g、0.045モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)をNMP25gとともに加えて、85℃で3時間反応させた。反応終了後、室温まで冷却し、酢酸(13.20g、0.25モル)をNMP25gとともに加えて、室温で1時間撹拌した。撹拌終了後、溶液を水1.5Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミドの(IV)を得た。重量平均分子量は37,400であった。
乾燥窒素気流下、合成例2で得られた(A−2)34.63g(0.05モル)、をNMP100gに溶解させた。ここに、酸A(6.76g、0.023モル)、ODPA6.98g(0.023モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)をNMP25gとともに加えて、85℃で3時間反応させた。反応終了後、室温まで冷却し、酢酸(13.20g、0.25モル)をNMP25gとともに加えて、室温で1時間撹拌した。撹拌終了後、溶液を水1.5Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミドーポリイミド共重合体(V)を得た。重量平均分子量は35,500であった。
乾燥窒素気流下、合成例2で得られた(A−2)17.32g(0.025モル)、BAHF9.16g(0.025モル)をNMP100gに溶解させた。ここに、酸A(6.76g、0.023モル)、ODPA6.98g(0.023モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)をNMP25gとともに加えて、85℃で3時間反応させた。反応終了後、室温まで冷却し、酢酸(13.20g、0.25モル)をNMP25gとともに加えて、室温で1時間撹拌した。撹拌終了後、溶液を水1.5Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミドーポリイミド共重合体(VI)を得た。重量平均分子量は37,200は.1.9であった。
乾燥窒素気流下、合成例2で得られた(A−2)17.32g(0.025モル)、BAHF7.33g(0.020モル)、RT−1000(5.0g、0.005モル)をNMP100gに溶解させた。ここに、酸A(6.76g、0.023モル)、ODPA6.98g(0.023モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)をNMP25gとともに加えて、85℃で3時間反応させた。反応終了後、室温まで冷却し、酢酸(13.20g、0.25モル)をNMP25gとともに加えて、室温で1時間撹拌した。撹拌終了後、溶液を水1.5Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミドーポリイミド共重合体(VII)を得た。重量平均分子量は39,200であった。
乾燥窒素気流下、BAHF18.31g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体(VIII)を得た。重量平均分子量は29,500であった。
乾燥窒素気流下、HFHA30.23g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体(IX)を得た。重量平均分子量は29,500であった。
乾燥窒素気流下、BAHF18.31g(0.05モル)をNMP100gに溶解させた。ここに、ドデカン二酸ジクロリド(酸B)14.67g(0.045モル)をNMP25gとともに加えて、85℃で3時間反応させた。反応終了後、室温まで冷却し、酢酸(13.20g、0.25モル)をNMP25gとともに加えて、室温で1時間撹拌した。撹拌終了後、溶液を水1.5Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリヒドロキシアミド(X)を得た。重量平均分子量は31,400であった。
ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン18.3g(0.05モル)をアセトン100ml、プロピレンオキシド17.4g(0.3モル)に溶解させ、−15℃に冷却した。ここに3−(2−(2−(2−(1,3−ジオキソイソインドリン−2−イル)エトキシ)エトキシ)エトキシ)プロピルクロライド 40.6g(0.11モル)をアセトン100mlに溶解させた溶液を滴下した。滴下終了後、−15℃で4時間反応させ、その後室温に戻した。溶液をロータリーエバポレーターで濃縮し、得られた固体をテトラヒドロフランとエタノールの溶液で再結晶した。
FT−IR/cm−1:3350〜3005、2943、2900、1650、1604,1550、1501、1420、1299、1130、820。
1H−NMR(DMSO): δ ( p p m ):10.3(s、2H)、9.2(s、2H)、8.0(s、2H)、6.5−6.9(m、4H)、4.6(s、4H)、4.3−4.5(4.0(m、24H)、2.3(t、4H)。
乾燥窒素気流下、合成例14で得られた(A−4)38.61g(0.05モル)をN−メチル−2−ピロリドン(NMP)80gに溶解させた。ここに3,3’,4,4’−ジフェニルエーテルテトラカルボン酸無水物(ODPA)13.95g(0.045モル)をNMP10gとともに加えて、40℃で1時間反応させた。その後、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(NA)1.64g(0.01モル)を加え、さらに40℃で1時間反応させた。その後、N,N’−ジメチルホルムアミドジメチルアセタール12.50g(0.11モル)をNMP15gで希釈した溶液を10分かけて滴下した。滴下後、40℃で2時間撹拌した。反応終了後、溶液を水2Lに投入して、ポリマー固体の沈殿をろ過で集めた。ポリマー固体を50℃の真空乾燥機で72時間乾燥しポリイミド前駆体の(III)を得た。重量平均分子量は45,300であった。
上記樹脂(I)〜(XI)10gに対し、感光性化合物2.0g、熱架橋剤3.0g、溶剤としてγ−ブチロラクトンを20g加えてワニスを作製した。
2 Alパッド
3 パッシベーション膜
4 絶縁膜
5 金属(Cr、Ti等)膜
6 金属配線(Al、Cu等)
7 絶縁膜
8 バリアメタル
9 スクライブライン
10 ハンダバンプ
11 封止樹脂
12 基板
13 絶縁膜
14 絶縁膜
15 金属(Cr、Ti等)膜
16 金属配線(Ag、Cu等)
17 金属配線(Ag、Cu等)
18 電極
19 封止樹脂
20 支持基板(ガラス基板、シリコンウェハ)
21 電極バッド(Cu)
22 絶縁膜
23 金属配線(Cu)
24 Cuポスト
25 ハンダバンプ
26 半導体チップ
27 TFT(薄膜トランジスタ)
28 配線
29 TFT絶縁層
30 平坦化層
31 ITO(透明電極)
32 基板
33 コンタクトホール
34 絶縁層
Claims (20)
- 一般式(1)で表される、ジアミン化合物。
R3、R4は、2価の脂肪族基、脂環基、芳香族基、
芳香族基が−O−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基、
複数ある芳香族基が単結合で結合された2価の有機基、
または複数ある芳香族基が−O−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基を示す。
R5、R6は、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、脂肪族基、芳香族基、アセチル基、カルボキシル基、エステル基、アミド基、イミド基、ウレア基のいずれかを有する有機基を表す。
Aは、2価の脂肪族基、脂環式基、芳香族基、複数ある芳香族基が単結合で結合された2価の有機基、
または複数ある芳香族基が−O−、−S−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基を示す。
p、qは0〜3の範囲内の整数である。) - 一般式(1)で表され、前記一般式(1)におけるR1、R2がそれぞれ独立に一般式(2)または一般式(3)で表される2価の脂肪族基である、請求項1に記載のジアミン化合物。
芳香族基が−O−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基、
複数ある芳香族基が単結合で結合された2価の有機基、
または複数ある芳香族基が−O−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基を示す。
R5、R6は、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、脂肪族基、芳香族基、アセチル基、カルボキシル基、エステル基、アミド基、イミド基、ウレア基のいずれかを有する有機基を表す。
Aは、2価の脂肪族基、脂環式基、芳香族基、複数ある芳香族基が単結合で結合された2価の有機基、
または複数ある芳香族基が−O−、−S−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基を示す。
p、qは0〜3の範囲内の整数である。)
- 一般式(1)で表され、前記一般式(1)におけるR3が式(4)で表される二価の有機基であり、前記一般式(1)におけるR4が式(5)で表される二価の有機基である、請求項1または2に記載のジアミン化合物。
R5、R6は、水素原子、ハロゲン原子、水酸基、ニトロ基、シアノ基、脂肪族基、芳香族基、アセチル基、カルボキシル基、エステル基、アミド基、イミド基、ウレア基のいずれかを有する有機基を表す。
Aは、2価の脂肪族基、脂環式基、芳香族基、複数ある芳香族基が単結合で結合された2価の有機基、
または複数ある芳香族基が−O−、−S−、−CO−、−SO2−、−CH2−、−C(CH3)2−、もしくは−C(CF3)2−:(ここでFはフッ素)で結合された2価の有機基である場合、を示す。
p、qは0〜3の範囲内の整数である。)
- 請求項1〜3のいずれかに記載のジアミン化合物に由来する構造を有する耐熱性樹脂。
- ポリイミド、ポリアミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール、ポリベンゾチアゾール、それらの前駆体、およびそれらの共重合体、からなる群から選ばれる少なくとも1種類を含む、請求項4に記載の耐熱性樹脂。
- 請求項4または5に記載の耐熱性樹脂と、(b)感光性化合物および(c)溶剤を含有する樹脂組成物。
- さらに、(d)アルコキシメチル基およびメチロール基のうち少なくともいずれか1つの基を2つ以上有する化合物を含有する、請求項6に記載の樹脂組成物。
- 請求項6または7に記載の樹脂組成物から形成された樹脂シート。
- 請求項6または7に記載の樹脂組成物を硬化した硬化膜。
- 請求項8に記載の樹脂シートを硬化した硬化膜。
- 請求項6または7に記載の樹脂組成物を基板上に塗布し、または、請求項8に記載の樹脂シートを基板上にラミネートし、乾燥して樹脂膜を形成する工程と、
マスクを介して露光する工程と、
照射部をアルカリ溶液で溶出または除去して現像する工程と、
現像後の樹脂膜を加熱処理する工程とを含む、硬化膜のレリーフパターンの製造方法。 - 前記樹脂組成物を基板上に塗布し、乾燥して樹脂膜を形成する工程が、スリットノズルを用いて基板上に塗布する工程を含む、請求項11に記載の硬化膜のレリーフパターンの製造方法。
- 請求項9または10に記載の硬化膜が、パターン化されまたはされないで、駆動回路上の平坦化層および第1電極上の絶縁層のいずれかまたは両方に配置された有機EL表示装置。
- 請求項9または10に記載の硬化膜が、パターン化されまたはされないで、再配線間の層間絶縁膜として配置された、電子部品または半導体装置。
- 前記再配線が銅金属配線であり、前記銅金属配線の幅と隣り合う配線同士の間隔が5μm以下である、請求項14に記載の電子部品または半導体装置。
- 請求項9または10に記載の硬化膜が、パターン化されまたはされないで、シリコンチップが配置された封止樹脂基板上に、再配線間の層間絶縁膜として配置された、電子部品または半導体装置。
- 前記再配線が銅金属配線であって、更にバンプを介して半導体チップと銅金属配線とを接続している請求項14〜16の何れかに記載の半導体電子部品または半導体装置。
- 再配線層が、半導体チップに近づくにつれ、金属配線の幅と隣り合う配線同士の間隔が狭くなる請求項14〜17の何れかに記載の半導体電子部品または半導体装置。
- 再配線間に配置された層間絶縁膜の厚みが、半導体チップに対して近づくにつれ、薄くなる請求項14〜18の何れかに記載の半導体電子部品または半導体装置。
- 請求項9または10に記載の硬化膜を、仮貼り材料が配置された支持基板上に再配線間の層間絶縁膜として配置する工程と、
その上にシリコンチップと封止樹脂を配置する工程と、
その後、仮貼り材料が配置された支持基板と再配線を剥離する工程を含む、
電子部品または半導体装置の製造方法。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1124271A (ja) * | 1997-06-30 | 1999-01-29 | Kurarianto Japan Kk | 高耐熱性放射線感応性レジスト組成物 |
JPH11199557A (ja) * | 1998-01-05 | 1999-07-27 | Toray Ind Inc | 樹脂原料用ジアミン |
JP2008106083A (ja) * | 2006-10-23 | 2008-05-08 | Toray Ind Inc | 耐熱樹脂前駆体組成物およびそれを用いた半導体装置 |
JP2008224984A (ja) * | 2007-03-12 | 2008-09-25 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP2011197362A (ja) * | 2010-03-19 | 2011-10-06 | Toray Ind Inc | ポジ型感光性樹脂組成物 |
JP2014181311A (ja) * | 2013-03-21 | 2014-09-29 | Toray Ind Inc | 樹脂組成物 |
JP2015168739A (ja) * | 2014-03-06 | 2015-09-28 | 東レ株式会社 | 樹脂組成物の製造方法 |
JP2016117688A (ja) * | 2014-12-22 | 2016-06-30 | 東レ・ファインケミカル株式会社 | ジアミン化合物の製造方法 |
WO2016152794A1 (ja) * | 2015-03-24 | 2016-09-29 | 東レ株式会社 | 感光性樹脂組成物 |
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1124271A (ja) * | 1997-06-30 | 1999-01-29 | Kurarianto Japan Kk | 高耐熱性放射線感応性レジスト組成物 |
JPH11199557A (ja) * | 1998-01-05 | 1999-07-27 | Toray Ind Inc | 樹脂原料用ジアミン |
JP2008106083A (ja) * | 2006-10-23 | 2008-05-08 | Toray Ind Inc | 耐熱樹脂前駆体組成物およびそれを用いた半導体装置 |
JP2008224984A (ja) * | 2007-03-12 | 2008-09-25 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP2011197362A (ja) * | 2010-03-19 | 2011-10-06 | Toray Ind Inc | ポジ型感光性樹脂組成物 |
JP2014181311A (ja) * | 2013-03-21 | 2014-09-29 | Toray Ind Inc | 樹脂組成物 |
JP2015168739A (ja) * | 2014-03-06 | 2015-09-28 | 東レ株式会社 | 樹脂組成物の製造方法 |
JP2016117688A (ja) * | 2014-12-22 | 2016-06-30 | 東レ・ファインケミカル株式会社 | ジアミン化合物の製造方法 |
WO2016152794A1 (ja) * | 2015-03-24 | 2016-09-29 | 東レ株式会社 | 感光性樹脂組成物 |
WO2016158674A1 (ja) * | 2015-03-27 | 2016-10-06 | 東レ株式会社 | ジアミン化合物、それを用いた耐熱性樹脂または耐熱性樹脂前駆体 |
Non-Patent Citations (2)
Title |
---|
"RN:894347-90-1", REGISTRY(STN), JPN6017035454, 19 July 2006 (2006-07-19), ISSN: 0004700639 * |
"RN:894348-30-2", REGISTRY(STN), JPN6017035451, 19 July 2006 (2006-07-19), ISSN: 0004700638 * |
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CN109906217B (zh) | 2022-05-10 |
US11802181B2 (en) | 2023-10-31 |
SG11201903455QA (en) | 2019-05-30 |
CN109906217A (zh) | 2019-06-18 |
KR20190083329A (ko) | 2019-07-11 |
WO2018087990A1 (ja) | 2018-05-17 |
KR102460973B1 (ko) | 2022-11-02 |
TW201829372A (zh) | 2018-08-16 |
TWI726165B (zh) | 2021-05-01 |
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JP7073717B2 (ja) | 2022-05-24 |
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