JPWO2017057089A1 - 硬化膜およびその製造方法 - Google Patents
硬化膜およびその製造方法 Download PDFInfo
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- JPWO2017057089A1 JPWO2017057089A1 JP2016559450A JP2016559450A JPWO2017057089A1 JP WO2017057089 A1 JPWO2017057089 A1 JP WO2017057089A1 JP 2016559450 A JP2016559450 A JP 2016559450A JP 2016559450 A JP2016559450 A JP 2016559450A JP WO2017057089 A1 JPWO2017057089 A1 JP WO2017057089A1
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- Prior art keywords
- cured film
- photosensitive resin
- group
- film
- bis
- Prior art date
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Abstract
Description
本発明のポリヒドロキシアミドは、アルカリ溶液溶解性の点から、p、またはqの値が1以上、4以下である繰り返し単位を全構造単位中に対し50%以上含むことが好ましく、70%以上含むことがより好ましい。
X1(COZ)2の構造を有するジカルボン酸誘導体としては、Zが炭素数1〜12の有機基、もしくはハロゲン元素から選ばれた基であり、下記の構造式から選ばれた基であることが好ましい。
Y1(NH2)2の構造を有するジアミンとしては、例えば、m−フェニレンジアミン、p−フェニレンジアミン、3,5−ジアミノ安息香酸、1,5−ナフタレンジアミン、2,6−ナフタレンジアミン、9,10−アントラセンジアミン、2,7−ジアミノフルオレン、4,4’−ジアミノベンズアニリド、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、3−カルボキシ−4,4’−ジアミノジフェニルエーテル、3−スルホン酸−4,4’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルメタン、3,3’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルホン、4,4’−ジアミノジフェニルスルホン、3,4’−ジアミノジフェニルスルフィド、4,4’−ジアミノジフェニルスルフィド、4−アミノ安息香酸4−アミノフェニルエステル、9,9−ビス(4−アミノフェニル)フルオレン、1,3−ビス(4−アニリノ)テトラメチルジシロキサン、2,2’−ジメチル−4,4’−ジアミノビフェニル、2,2’−ジエチル−4,4’−ジアミノビフェニル、3,3’−ジメチル−4,4’−ジアミノビフェニル、3,3’−ジエチル−4,4’−ジアミノビフェニル、2,2’,3,3’−テトラメチル−4,4’−ジアミノビフェニル、3,3’,4,4’−テトラメチル−4,4’−ジアミノビフェニル、ビス(4−アミノフェノキシフェニル)スルホン、ビス(3−アミノフェノキシフェニル)スルホン、ビス(4−アミノフェノキシ)ビフェニル、ビス[4−(4−アミノフェノキシ)フェニル]エーテル、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン、2,2−ビス[4−(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン、1,4−ビス(4−アミノフェノキシ)ベンゼン、1,3−ビス(3−アミノフェノキシ)ベンゼン、1,3−ビス(4−アミノフェノキシ)ベンゼン、ビス(3−アミノ−4−ヒドロキシフェニル)スルホン、ビス(3−アミノ−4−ヒドロキシフェニル)プロパン、ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン、ビス(3−アミノ−4−ヒドロキシフェニル)メチレン、ビス(3−アミノ−4−ヒドロキシフェニル)エーテル、ビス(3−アミノ−4−ヒドロキシ)ビフェニル、4,4’−ジアミノ−6,6’−ビス(トリフルオロメチル)−[1,1’−ビフェニル]−3,3’−ジオール、9,9−ビス(3−アミノ−4−ヒドロキシフェニル)フルオレン、2,2’−ビス[N−(3−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]プロパン、2,2’−ビス[N−(3−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]ヘキサフルオロプロパン、2,2’−ビス[N−(4−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]プロパン、2,2’−ビス[N−(4−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]ヘキサフルオロプロパン、ビス[N−(3−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]スルホン、ビス[N−(4−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]スルホン、9,9−ビス[N−(3−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]フルオレン、9,9−ビス[N−(4−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]フルオレン、N、N’−ビス(3−アミノベンゾイル)−2,5−ジアミノ−1,4−ジヒドロキシベンゼン、N、N’−ビス(4−アミノベンゾイル)−2,5−ジアミノ−1,4−ジヒドロキシベンゼン、N、N’−ビス(4−アミノベンゾイル)−4,4’−ジアミノ−3,3−ジヒドロキシビフェニル、N、N’−ビス(3−アミノベンゾイル)−3,3’−ジアミノ−4,4−ジヒドロキシビフェニル、N、N’−ビス(4−アミノベンゾイル)−3,3’−ジアミノ−4,4−ジヒドロキシビフェニル、2−(4−アミノフェニル)−5−アミノベンゾオキサゾール、2−(3−アミノフェニル)−5−アミノベンゾオキサゾール、2−(4−アミノフェニル)−6−アミノベンゾオキサゾール、2−(3−アミノフェニル)−6−アミノベンゾオキサゾール、1,4−ビス(5−アミノ−2−ベンゾオキサゾリル)ベンゼン、1,4−ビス(6−アミノ−2−ベンゾオキサゾリル)ベンゼン、1,3−ビス(5−アミノ−2−ベンゾオキサゾリル)ベンゼン、1,3−ビス(6−アミノ−2−ベンゾオキサゾリル)ベンゼン、2,6−ビス(4−アミノフェニル)ベンゾビスオキサゾール、2,6−ビス(3−アミノフェニル)ベンゾビスオキサゾール、ビス[(3−アミノフェニル)−5−ベンゾオキサゾリル]、ビス[(4−アミノフェニル)−5−ベンゾオキサゾリル]、ビス[(3−アミノフェニル)−6−ベンゾオキサゾリル]、ビス[(4−アミノフェニル)−6−ベンゾオキサゾリル]などの芳香族ジアミンや、これらの芳香族環の水素原子の一部を、炭素数1〜10のアルキル基やフルオロアルキル基、ハロゲン原子などで置換した化合物、下記に示す構造であるものなどを挙げることができるが、これらに限定されない。共重合させる他のジアミンは、そのまま、あるいは対応するジイソシアネート化合物、トリメチルシリル化ジアミンとして使用できる。また、これら2種以上のジアミン成分を組み合わせて用いてもよい。
一般式(2)で表される構造単位を有するジアミンとしては例えば、エチレンジアミン、1,3−ジアミノプロパン、2−メチル−1,3−プロパンジアミン、1,4−ジアミノブタン、1,5−ジアミノペンタン、2−メチル−1,5−ジアミノペンタン、1,6−ジアミノヘキサン、1,7−ジアミノヘプタン、1,8−ジアミノオクタン、1,9−ジアミノノナン、1,10−ジアミノデカン、1,11−ジアミノウンデカン、1,12−ジアミノドデカン、1,2−シクロヘキサンジアミン、1,3−シクロヘキサンジアミン、1,4−シクロヘキサンジアミン、1,2−ビス(アミノメチル)シクロヘキサン、1,3−ビス(アミノメチル)シクロヘキサン、1,4−ビス(アミノメチル)シクロヘキサン、4,4’−メチレンビス(シクロヘキシルアミン)、4,4’−メチレンビス(2−メチルシクロヘキシルアミン)、KH−511、ED−600、ED−900、ED−2003、EDR−148、EDR−176、D−200、D−400、D−2000、THF−100、THF−140、THF−170、RE−600、RE−900、RE−2000、RP−405、RP−409、RP−2005、RP−2009、RT−1000、HE−1000、HT−1100、HT−1700、(以上商品名、HUNTSMAN(株)製)などが挙げられるが、アルキレンオキシド構造を含むことがより柔軟性が増し高伸度化の点で好ましい。また、―S―、―SO―、―SO2―、―NH―、―NCH3―、―N(CH2CH3)―、―N(CH2CH2CH3)―、―N(CH(CH3)2)―、―COO―、―CONH―、―OCONH―、―NHCONH―などの結合を含んでもよい。
また、(D)成分の添加量は、(A)成分100質量部に対し、0.1〜10質量部が好ましい。添加量を0.1質量部以上とすることで、金属材料に対する密着性の効果を十分に得ることができ、また10質量部以下とすることで、本発明に用いられる感光性樹脂組成物がポジ型の場合には、感光剤との相互作用により、硬化前のポジ型感光性樹脂組成物の感度低下を抑制できるため好ましい。
(E)成分は、酸化防止剤として作用することで、(A)成分の脂肪族基やフェノール性水酸基の酸化劣化を抑制する。また、金属材料への防錆作用により、金属材料の酸化を抑制することができる。
本発明で用いる(F)成分のR25およびR26は、各々独立に、水素原子またはメチル基を示す。また、R24は炭素数2以上のアルキレン基を有する2価の有機基であり、直鎖状、分岐状、および環状のいずれでもよい。R24は、アルキル基、シクロアルキル基、アルコキシ基、アルキルエーテル基、アルキルシリル基、アルコキシシリル基、アリール基、アリールエーテル基、カルボキシル基、カルボニル基、アリル基、ビニル基、複素環基、またそれらを組み合わせたものなどが挙げられ、さらに置換基を有していてもよい。
本発明に用いる(F)成分は、上記構造の中でも、耐熱性と機械特性を両立する点から、n2は1〜2、n3は3〜7であることが好ましい。
(A)構造単位を有する樹脂の重量平均分子量(Mw)は、GPC(ゲルパーミエーションクロマトグラフィー)装置Waters2690−996(日本ウォーターズ(株)製)を用いて確認した。展開溶媒をN−メチル−2−ピロリドン(以降NMPと呼ぶ)として測定し、ポリスチレン換算で重量平均分子量(Mw)及び分散度(PDI=Mw/Mn)を計算した。
ワニスを、シリコンウエハ上に120℃で3分間プリベークを行った後の膜厚が10μmとなるように塗布現像装置ACT−8を用いてスピンコート法で塗布し、プリベークした後、イナートオーブンCLH−21CD−Sを用いて、窒素気流下において酸素濃度20ppm以下で毎分3.5℃の昇温速度で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところでシリコンウエハを取り出し、その硬化膜をストレス装置FLX2908(KLA Tencor社製)にて測定した。その結果が、30MPa以上のものを不良として1、20MPa以上30MPa未満の場合は良好として2、20MPa未満のものはきわめて良好として3、と評価した。
ワニスを8インチのシリコンウエハ上に、120℃で3分間のプリベーク後の膜厚が11μmとなるように塗布現像装置ACT−8を用いてスピンコート法で塗布およびプリベークした後、イナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところでシリコンウエハを取り出し、45質量%のフッ化水素酸に5分間浸漬することで、ウエハより樹脂組成物の硬化膜を剥がした。この膜を幅1cm、長さ9cmの短冊状に切断し、テンシロンRTM−100((株)オリエンテック製)を用いて、室温23.0℃、湿度45.0%RH下で引張速度5mm/分で引っ張り、破断点伸度の測定を行なった。測定は1検体につき10枚の短冊について行ない、結果から上位5点の平均値を求めた。破断点伸度の値が60%以上のものを極めて良好として4、20%以上60%未満のものを良好として3、10%以上20%未満のものを可として2、10%未満のものを不良として1、と評価した。
次の方法にて金属銅との密着性評価を行なった。
まず、厚さ約3μmの金属銅めっき基板上にワニスをスピンナ(ミカサ(株)製)を用いてスピンコート法で塗布し、次いでホットプレート(大日本スクリーン製造(株)製D−SPIN)を用いて120℃のホットプレートで3分ベークし、最終的に厚さ8μmのプリベーク膜を作製した。この膜をイナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところで基盤を取り出し、基板を2分割し、それぞれの基板についてキュア後の膜に片刃を使用して2mm間隔で10行10列の碁盤目状の切り込みをいれた。このうち一方のサンプル基板を用い、“セロテープ”(登録商標)による引き剥がしによって100マスのうち何マス剥がれたかで金属材料/樹脂硬化膜間の接着特性の評価を行なった。また、もう一方のサンプル基板については、プレッシャークッカー試験(PCT)装置(タバイエスペエック(株)製HAST CHAMBER EHS−211MD)を用いて121℃、2気圧の飽和条件で400時間PCT処理を行なった後、上記の引き剥がしテストを行なった。いずれの基板についても引き剥がしテストで剥がれ個数が0を極めて良好として4、1以上20未満を良好として3、20以上50未満を可として2、50以上を不良として1とした。
得られた硬化膜(A)を300〜350℃で加熱した硬化膜(B)を得た。これらの硬化膜(A)、および硬化膜(B)の赤外吸収スペクトルを測定し、1050cm−1付近のC−O伸縮振動に起因するピークの吸光度を求めた。赤外吸収スペクトルの測定は、測定装置として「FT−720」(商品名、株式会社堀場製作所製)を使用した。硬化膜(B)の閉環率を100%として、次の式から硬化膜(A)の閉環率を算出した。ここでいう閉環率とは、ポリ(o‐ヒドロキシアミド)構造単位の閉環率を示す。本実施例では、ワニスより硬化膜を作製し、閉環率の算出を行った。本実施例における閉環率の算出は、ワニスシリコンウエハ上にスピンコートして、120℃で3分間乾燥し、膜厚5μmの塗布膜を得た。さらにこの塗布膜を220℃で10分、または3320℃で10分加熱して硬化膜(220℃で加熱した硬化膜(A)、320℃で加熱した硬化膜(B))を得た。これらの硬化膜(A)、および硬化膜(B)を用いて次の式から硬化膜(A)の閉環率を算出した。硬化膜(A)の加熱温度が硬化膜の硬化温度である。硬化膜(B)の加熱温度320℃は、硬化膜中の(A)成分が完全に硬化する(硬化率100%となる)温度である。硬化膜の熱分解温度は熱重量減少測定(TGA)により分析できる。
次の方法にて信頼性評価を行なった。
ワニスを8インチのシリコンウエハ上に、120℃で3分間のプリベーク後の膜厚が11μmとなるように塗布現像装置ACT−8を用いてスピンコート法で塗布およびプリベークした後、イナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところでウエハを取り出し、次に、高温保存試験機を用いて、150℃で500時間処理を行った。ウエハを取り出し、45質量%のフッ化水素酸に5分間浸漬することで、ウエハから樹脂組成物の膜を剥がした。この膜を幅1cm、長さ9cmの短冊状に切断し、テンシロンRTM−100((株)オリエンテック製)を用いて、室温23.0℃、湿度45.0%RH下で引張速度5mm/分で引っ張り、破断点伸度の測定を行なった。測定は1検体につき10枚の短冊について行ない、結果から上位5点の平均値を求めた。破断点伸度の値が60%以上のものをきわめて良好として4、20%以上60%未満のものを良好として3、10%以上20%未満のものを可2、10%未満のものを不良1とした。
厚さ約3μmの金属銅めっき基板上にワニスをスピンナ(ミカサ(株)製)を用いてスピンコート法で塗布し、次いでホットプレート(大日本スクリーン製造(株)製D−SPIN)を用いて120℃のホットプレートで3分ベークし、最終的に厚さ8μmのプリベーク膜を作製した。この膜をイナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で220℃まで昇温し、220℃で1時間加熱処理を行なった。温度が50℃以下になったところで基盤を取り出し、キュア後の膜に片刃を使用して2mm間隔で10行10列の碁盤目状の切り込みをいれた。このサンプル基板について、高温保存試験機を用いて150℃で500時間加熱保存処理を行なった後、上記の引き剥がしテストを行なった。いずれの基板についても引き剥がしテストで剥がれ個数が0を極めて良好として4、1以上20未満を良好として3、20以上50未満を可として2、50以上を不良として1とした。
乾燥窒素気流下、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(以降BAHFと呼ぶ)(27.47g、0.075モル)をNMP257gに溶解させた。ここに、1,1’−(4,4’−オキシベンゾイル)ジイミダゾール(以降PBOMと呼ぶ)(17.20g、0.048モル)をNMP20gとともに加えて、85℃で3時間反応させた。続いて、プロピレンオキシド及びテトラメチレンエーテルグリコール構造を含むRT−1000(20.00g、0.020モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.24g、0.0050モル)、PBOM(14.33g、0.044モル)をNMP50gとともに加えて、85℃で1時間反応させた。さらに、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(3.94g、0.024モル)をNMP10gとともに加えて、85℃で30分反応させた。反応終了後、室温まで冷却し、酢酸(52.82g、0.50モル)をNMP87gとともに加えて、室温で1時間攪拌した。攪拌終了後、溶液を水3Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、アルカリ可溶性ポリアミド樹脂(A−1)の粉末を得た。上記の方法で評価した結果、樹脂(A−1)の重量平均分子量は40,000、PDIは2.2であった。
乾燥窒素気流下、BAHF(29.30g、0.080モル)、プロピレンオキシド及びテトラメチレンエーテルグリコール構造を含むRT−1000(20.00g、0.020モル)をNMP205gに溶解させた。ここに、PBOM(28.67g、0.080モル)をNMP20gとともに加えて、85℃で3時間反応させた。続いて、2,2’−ビス[N−(3−アミノベンゾイル)−3−アミノ−4−ヒドロキシフェニル]ヘキサフルオロプロパン(以降HFHAと呼ぶ)(0.60g、0.0010モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.49g、0.0060モル)をNMP20gとともに加えて、85℃で30分反応させた。続いて、末端封止剤として、5−ノルボルネン−2,3−ジカルボン酸無水物(6.57g、0.040モル)をNMP10gとともに加えて、85℃で30分反応させた。さらに、4,4’−オキシジフタル酸無水物(以降ODPAと呼ぶ)(2.17g、0.0070モル)をNMP30gとともに加えて、85℃で1時間反応させた。反応終了後、室温まで冷却し、酢酸(48.02g、0.50モル)をNMP67gとともに加えて、室温で1時間攪拌した。攪拌終了後、溶液を水3Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、アルカリ可溶性ポリアミド樹脂(A−2)の粉末を得た。上記の方法で評価した結果、樹脂(A−2)の重量平均分子量は31,600、PDIは1.9であった。
前記合成例2に従って、BAHF(32.96g、0.090モル)、PBOM(29.38g、0.082モル)、RT−1000(10.00g、0.010モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.49g、0.0060モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(5.91g、0.036モル)、HFHA(0.60g、0.0010モル)、ODPA(2.17g、0.0070モル)、酢酸(49.22g、0.50モル)、NMP360gを用いて同様に行い、アルカリ可溶性ポリアミド樹脂(A−3)の粉末を得た。上記の方法で評価した結果、樹脂(A−3)の重量平均分子量は30,200、PDIは2.2であった。
前記合成例1に従って、BAHF(34.79g、0.095モル)、PBOM(31.53g、0.088モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.24g、0.0050モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(3.94g、0.024モル)、酢酸(52.82g、0.50モル)、NMP352gを用いて同様に行い、アルカリ可溶性ポリアミド樹脂(A−4)の粉末を得た。上記の方法で評価した結果、樹脂(A−4)の重量平均分子量は35,800、PDIは2.5であった。
乾燥窒素気流下、N−メチルピロリドン100gを仕込み、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(32.96g、0.090モル)、m−アミノフェノール(2.18g、0.020モル)を添加し、室温で攪拌溶解した後、反応溶液の温度を−10〜0℃に保ちながら、ドデカン二酸ジクロリド(20.04g、0.075モル)を10分間で滴下した後、4,4’−ジフェニルエーテルジカルボン酸クロリド(7.38g、0.025モル)を加え、室温で3時間攪拌を続けた。反応溶液を3リットルの水に投入し、析出物を回収、純水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し、ポリ(o−ヒドロキシアミド)(A−5)の粉末を得た。上記の方法で評価した結果、樹脂(A−5)の重量平均分子量は31,000、PDIは2.3であった。
前記合成例2に従って、BAHF(32.96g、0.090モル)、PBOM(29.38g、0.082モル)、HT−1100(11.00g、0.010モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.49g、0.0060モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(5.91g、0.036モル)、HFHA(0.60g、0.0010モル)、ODPA(2.17g、0.0070モル)、酢酸(49.22g、0.50モル)、NMP360gを用いて同様に行い、アルカリ可溶性ポリアミド樹脂(A−6)の粉末を得た。上記の方法で評価した結果、樹脂(A−6)の重量平均分子量は31,200、PDIは2.3であった。
前記合成例2に従って、BAHF(32.96g、0.090モル)、PBOM(29.38g、0.082モル)、HT−1700(17.00g、0.010モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(1.49g、0.0060モル)、5−ノルボルネン−2,3−ジカルボン酸無水物(5.91g、0.036モル)、HFHA(0.60g、0.0010モル)、ODPA(2.17g、0.0070モル)、酢酸(49.22g、0.50モル)、NMP360gを用いて同様に行い、アルカリ可溶性ポリアミド樹脂(A−7)の粉末を得た。上記の方法で評価した結果、樹脂(A−7)の重量平均分子量は32,100、PDIは2.4であった。
乾燥窒素気流下、BAHF(11.9g、0.0325モル)、RT−1000(15.0g、0.015モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(0.62g、0.0025モル)、5−ノルボルネン−2,3−ジカルボン酸(0.82g、0.005モル)、をNMP125gに溶解させた。ここに4,4’−オキシジフタル酸無水物(13.95g、0.045モル)をNMP25gとともに加えて、60℃で1時間攪拌し、次いで180℃で4時間撹拌した。撹拌終了後、溶液を水3Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、50℃の通風乾燥機で3日間乾燥し既閉環ポリイミド樹脂(A−8)の粉末を得た。得られた樹脂のイミド化率は97%であった。上記の方法で評価した結果、樹脂(A−8)の重量平均分子量は38,800、PDIは.1.9であった。
得られた樹脂(A−1〜7)10gに(B)成分として下記式で表される光酸発生剤を2.0g、(C)成分としてHMOM−TPHAP(C1)とMW−100LM(C2)を加え、溶剤としてγ−ブチロラクトンを20g加えてワニスを作製し、これらの特性を上記評価方法により測定した。得られた結果を表1に示す。
得られた樹脂(A−1〜7)10gに(B)成分として下記式で表される光酸発生剤を2.0g、(C)成分としてHMOM−TPHAP(C1)を0.5gとMW−100LM(C2)を0.5g加え、溶剤としてγ−ブチロラクトンを20g加えてワニスを作製し、さらに下記式で表される(D−1)、(D−2)、(E−1)、(E−2)、(F)をそれぞれ表2の質量部で加えてワニスを作製し、これらの特性を上記評価方法により測定した。得られた結果を表2に示す。
2 Alパッド
3 パッシベーション膜
4 絶縁膜
5 金属(Cr、Ti等)膜
6 金属配線(Al、Cu等)
7 絶縁膜
8 バリアメタル
9 スクライブライン
10 ハンダバンプ
Claims (19)
- 感光性樹脂組成物を硬化した硬化膜であって、前記感光性樹脂組成物がポリヒドロキシアミドを含有し、前記硬化膜における前記ポリヒドロキシアミドの閉環率が10%以下であることを特徴とする硬化膜。
- 前記硬化膜におけるポリヒドロキシアミドの閉環率が0.1%以上10%以下である、請求項1に記載の硬化膜。
- 前記一般式(2)で表されるポリエーテル構造単位の分子量が150以上2,000以下である、請求項4に記載の硬化膜。
- 前記一般式(2)で表されるポリエーテル構造単位の含有量が全ジアミン残基中5〜40モル%である請求項4または5に記載の硬化膜。
- 前記感光性樹脂組成物が、さらに、(B)光により酸を発生する化合物、および(C)熱架橋剤を含有する請求項1〜6のいずれかに記載の硬化膜。
- 前記ポリヒドロキシアミドがポリ(o−ヒドロキシアミド)である請求項1〜7のいずれかに記載の硬化膜。
- (F)一般式(5)で表される構造単位を有する熱架橋剤100質量部に対する(E)一般式(4)で表される化合物の含有量が10〜50質量部の範囲内である、請求項1〜11のいずれかに記載の硬化膜。
- 請求項1〜12のいずれかに記載の硬化膜を製造する方法であって、前記感光性樹脂組成物を基板上に塗布し、乾燥して感光性樹脂膜を形成する工程もしくは前記感光性樹脂組成物から形成された感光性シートを基材上にラミネートして感光性樹脂膜を形成する工程と、前記感光性樹脂膜を露光する工程と、現像する工程と、加熱処理する工程を含む、硬化膜の製造方法。
- 前記感光性樹脂膜を加熱処理する工程が170℃以上250℃以下の温度で加熱処理する工程を含む、請求項13に記載の硬化膜の製造方法。
- 請求項1〜12のいずれかに記載の硬化膜が配置された、層間絶縁膜または半導体保護膜。
- 請求項1〜12のいずれかに記載の硬化膜のレリーフパターン層を有する、半導体電子部品または半導体装置。
- 請求項1〜12のいずれかに記載の硬化膜が再配線間の層間絶縁膜として配置された、半導体電子部品または半導体装置。
- 前記再配線と層間絶縁膜が2〜10層繰り返し配置された、請求項17に記載の半導体電子部品または半導体装置。
- 請求項1〜12のいずれかに記載の硬化膜が2種以上の材質で構成される隣接する基板の層間絶縁膜として配置された、半導体電子部品または半導体装置。
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