JPWO2016199546A1 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JPWO2016199546A1 JPWO2016199546A1 JP2017523170A JP2017523170A JPWO2016199546A1 JP WO2016199546 A1 JPWO2016199546 A1 JP WO2016199546A1 JP 2017523170 A JP2017523170 A JP 2017523170A JP 2017523170 A JP2017523170 A JP 2017523170A JP WO2016199546 A1 JPWO2016199546 A1 JP WO2016199546A1
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Abstract
Description
図1は、本実施の形態のMOSFET501(電力用半導体装置)が有する素子領域100および終端領域200を概略的に示す平面図である。図2は、図1の破線範囲IIの拡大図である。
上記本実施の形態では、図3に示すように、素子トレンチTR1は、保護拡散領域11に覆われた底面を有している。また保護拡散領域11全体は、平面レイアウトにおいて、素子トレンチTR1の底面とほぼ重複している。同様に、終端トレンチTR2は、終端拡散領域12に覆われた底面を有している。また終端拡散領域12全体は、平面レイアウトにおいて、終端トレンチTR2の底面とほぼ重複している。
図17を参照して、本実施の形態のMOSFET502(電力用半導体装置)には、電流拡散層32V(図3:実施の形態1)に代わり電流拡散層32L(第2の電流拡散層)が設けられている。電流拡散層32Lの不純物濃度は、電流拡散層31の不純物濃度よりも低い。すなわち電流拡散層32Lの全領域が、電流拡散層31の不純物濃度よりも低い不純物濃度を有する。また電流拡散層32Lの不純物濃度は、少なくとも電流拡散層32Lの上面(pn接合面JF)において、ドリフト層2の不純物濃度よりも高い。つまり、本実施の形態はドリフト層2と電流拡散層32Lの不純物濃度が異なる形態である。かかる場合、ドリフト層2と電流拡散層32Lとの境界は判然としない場合があるが、本明細書では電流拡散層32Lは電流拡散層31と同じ厚さの領域と定義する。よって、MOSFET502は、保護拡散領域11Aと終端拡散領域12との間において、pベース領域3の下面から電流拡散層31と同じ厚さの領域(電流拡散層32L)における不純物濃度が、電流拡散層31の不純物濃度よりも低く、かつドリフト層2の不純物濃度よりも高くなるように構成されている。
図19を参照して、本実施の形態のMOSFET503(電力用半導体装置)には、電流拡散層32V(図3:実施の形態1)に代わり電流拡散層32P(第2の電流拡散層)が設けられている。電流拡散層32Pは、電流拡散層31の不純物濃度よりも低い不純物濃度を有する領域32h(第1の領域)と、領域32hの不純物濃度よりも高い不純物濃度を有する領域32i(第2の領域)とを含む。領域32hおよび32iの各々はpベース領域3に接している。
図20を参照して、本実施の形態のMOSFET504(電力用半導体装置)には、電流拡散層32V(図3:実施の形態1)に代わり電流拡散層32D(第2の電流拡散層)が設けられている。電流拡散層32Dは電流拡散層31よりも深く位置している。言い換えれば、電流拡散層32Dの全領域は、電流拡散層31よりも深く位置している。このためpn接合面JFは、保護拡散領域11Aおよび11Bの間において深さDP1に位置しており、かつ保護拡散領域11Aおよび終端拡散領域12の間において深さDP2に位置しており、DP2>DP1が満たされている。
図21を参照して、本実施の形態のMOSFET505(電力用半導体装置)には、電流拡散層32D(図20:実施の形態4)に代わり電流拡散層32C(第2の電流拡散層)が設けられている。電流拡散層32Cは、電流拡散層31よりも深く位置する領域32j(第1の領域)と、領域32jよりも浅く位置する領域32k(第2の領域)とを含む。本実施の形態においては領域32kは、電流拡散層31と同じ深さに位置する。
図22および図23は、本実施の形態のMOSFET506(電力用半導体装置)の構成を概略的に示す断面図である。図22の断面の位置は、図3などの断面の位置に対応している。図23の断面は、電流拡散層30が設けられた深さ位置での、図22の断面に直交する断面である。
図24は、本実施の形態のMOSFET507(電力用半導体装置)の構成を概略的に示す断面図である。図24の断面の位置は、図3などの断面の位置に対応しており、図25および図26の線XXIVに沿っている。図25および図26のそれぞれは、電流拡散層30および保護領域11が設けられた深さ位置での、図24の断面に直交する断面である。
Claims (12)
- ワイドバンドギャップ半導体からなる第1導電型のドリフト層(2)と、
素子領域(100)において、前記ドリフト層(2)の上部に形成された第2導電型のベース領域(3)と、
前記ベース領域(3)の上部に形成された第1導電型のソース領域(4)と、
前記ベース領域(3)及び前記ソース領域(4)を貫通し、前記ドリフト層(2)に達するように形成された素子トレンチ(TR1)の側面及び底面に形成されたゲート絶縁膜(6)と、
前記素子トレンチ(TR1)の内部に前記ゲート絶縁膜(6)を介して形成されたゲート電極(7)と、
前記素子領域(100)における前記ドリフト層(2)内に、前記素子トレンチ(TR1)よりも深い位置に形成された第2導電型の保護拡散領域(11)と、
前記ベース領域(3)の下部に形成された第1導電型の電流拡散層(30)と、
前記素子領域(100)を囲む終端領域(200)において、側面が前記ベース領域(3)に接する終端トレンチ(TR2)内に、絶縁膜(6P)を介して形成され、前記ゲート電極(7)と電気的に接続されたゲート引き出し電極(7P)と、
前記終端領域(200)において、前記終端トレンチ(TR2)よりも深い位置に形成された第2導電型の終端拡散領域(12)と、
を備え、
断面視において、
前記保護拡散領域(11)は、前記素子領域(100)内で前記終端領域(200)に最も近い場所に配置された第1の保護拡散領域(11A)と、前記第1の保護拡散領域(11A)と第1間隔(SP1)を介して配置された第2の保護拡散領域(11B)と、を有し、
前記終端拡散領域(12)と前記第1の保護拡散領域(11A)との間の距離である第2間隔(SP2)は、前記第1間隔(SP1)よりも大きく、
前記電流拡散層(30)は、前記第1の保護拡散領域(11A)と前記第2の保護拡散領域(11B)との間に位置し前記ドリフト層(2)の不純物濃度よりも高い不純物濃度を有する第1の電流拡散層(31)と、前記第1の保護拡散領域(11A)と前記終端拡散領域(12)との間に位置する第2の電流拡散層(32V,32L,32P)と、を有し、
前記第2の電流拡散層(32V,32L)は、前記第1の電流拡散層(31)の不純物濃度よりも低い不純物濃度を有する領域を含む、
電力用半導体装置(501〜503,506)。 - 前記第2の電流拡散層(32V)は、前記ドリフト層(2)の不純物濃度と同じ不純物濃度を有する、請求項1に記載の電力用半導体装置(501)。
- 前記第2の電流拡散層(32L)は、前記ドリフト層(2)の不純物濃度よりも高い不純物濃度を有する、請求項1に記載の電力用半導体装置(502)。
- 前記第2の電流拡散層(32P,32Q)は、前記第1の電流拡散層(31)の不純物濃度よりも低い不純物濃度を有する第1の領域(32h,32m)と、前記第1の領域(32h)の不純物濃度よりも高い不純物濃度を有する第2の領域(32i,32n)とを含む、請求項1に記載の電力用半導体装置(503,506)。
- 前記第1の領域(32h)は、前記ドリフト層(2)の不純物濃度と同じ不純物濃度を有する、請求項4に記載の電力用半導体装置(503)。
- 前記第2の領域(32i)は、前記第1の電流拡散層(31)の不純物濃度と同じ不純物濃度を有する、請求項4または5に記載の電力用半導体装置(503)。
- 前記第2の領域(32n)は、前記第1の電流拡散層(31)の不純物濃度と同じ不純物濃度を有し、前記ゲート絶縁膜(6)に接する領域に設けられる、請求項4に記載の電力用半導体装置(506)。
- 前記第2の電流拡散層(32V,32L,32P,32Q)は、前記第1の電流拡散層(31)の厚さと同じ厚さを有する、請求項1から7のいずれか1項に記載の電力用半導体装置(501〜503)。
- ワイドバンドギャップ半導体からなる第1導電型のドリフト層(2)と、
素子領域(100)において、前記ドリフト層(2)の上部に形成された第2導電型のベース領域(3)と、
前記ベース領域(3)の上部に形成された第1導電型のソース領域(4)と、
前記ベース領域(3)及び前記ソース領域(4)を貫通し、前記ドリフト層(2)に達するように形成された素子トレンチ(TR1)の側面及び底面に形成されたゲート絶縁膜(6)と、
前記素子トレンチ(TR1)の内部に前記ゲート絶縁膜(6)を介して形成されたゲート電極(7)と、
前記素子領域(100)における前記ドリフト層(2)内に、前記素子トレンチ(TR1)よりも深い位置に形成された第2導電型の保護拡散領域(11)と、
前記ベース領域(3)の下部に形成された第1導電型の電流拡散層(30)と、
前記素子領域(100)を囲む終端領域(200)において、側面が前記ベース領域(3)に接する終端トレンチ(TR2)内に、絶縁膜(6P)を介して形成され、前記ゲート電極(7)と電気的に接続されたゲート引き出し電極(7P)と、
前記終端領域(200)において、前記終端トレンチ(TR2)よりも深い位置に形成された第2導電型の終端拡散領域(12)と、
を備え、
断面視において、前記保護拡散領域(11)は、前記素子領域(100)内で前記終端領域(200)に最も近い場所に配置された第1の保護拡散領域(11A)と、前記第1の保護拡散領域(11A)と第1間隔(SP1)を介して配置された第2の保護拡散領域(11B)と、を有し、前記終端拡散領域(12)と前記第1の保護拡散領域(11A)との間の距離である第2間隔(SP2)は、前記第1間隔(SP1)よりも大きく、
前記保護拡散領域(11)は、
前記第1間隔(SP1)に直交する方向において、前記第1間隔(SP1)が設けられた領域を挟みかつ第3間隔(SP3)を介して配置された部分と、
前記第2間隔(SP2)に直交する方向において、前記第2間隔(SP2)が設けられた領域を挟みかつ第4間隔(SP4)を介して配置された部分と、
を有し、前記第4間隔(SP4)は前記第3間隔(SP3)よりも小さい、
電力用半導体装置(507)。 - ワイドバンドギャップ半導体からなる第1導電型のドリフト層(2)と、
素子領域(100)において、前記ドリフト層(2)の上部に形成された第2導電型のベース領域(3)と、
前記ベース領域(3)の上部に形成された第1導電型のソース領域(4)と、
前記ベース領域(3)及び前記ソース領域(4)を貫通し、前記ドリフト層(2)に達するように形成された素子トレンチ(TR1)の側面及び底面に形成されたゲート絶縁膜(6)と、
前記素子トレンチ(TR1)の内部に前記ゲート絶縁膜(6)を介して形成されたゲート電極(7)と、
前記素子領域(100)における前記ドリフト層(2)内に、前記素子トレンチ(TR1)よりも深い位置に形成された第2導電型の保護拡散領域(11)と、
前記ベース領域(3)の下部に形成された第1導電型の電流拡散層(31)と、
前記素子領域(100)を囲む終端領域(200)において、側面が前記ベース領域(3)に接する終端トレンチ(TR2)内に、絶縁膜(6P)を介して形成され、前記ゲート電極(7)と電気的に接続されたゲート引き出し電極(7P)と、
前記終端領域(200)において、前記終端トレンチ(TR2)よりも深い位置に形成された第2導電型の終端拡散領域(12)と、
を備え、
断面視において、
前記保護拡散領域(11)は、前記素子領域(100)内で前記終端領域(200)に最も近い場所に配置された第1の保護拡散領域(11A)と、前記第1の保護拡散領域(11A)と第1間隔(SP1)を介して配置された第2の保護拡散領域(11B)と、を有し、
前記終端拡散領域(12)と前記第1の保護拡散領域(11A)との間の距離である第2間隔(SP2)は、前記第1間隔(SP1)よりも大きく、
前記電流拡散層(31)は、前記第1の保護拡散領域(11A)と前記第2の保護拡散領域(11B)との間に位置し前記ドリフト層(2)の不純物濃度よりも高い不純物濃度を有し、
前記ドリフト層(2)と前記ベース領域(3)とは、断面視において、前記第1の保護拡散領域(11A)と前記終端拡散領域(12)との間で直接接している、
電力用半導体装置(501)。 - ワイドバンドギャップ半導体からなる第1導電型のドリフト層(2)と、
素子領域(100)において、前記ドリフト層(2)の上部に形成された第2導電型のベース領域(3)と、
前記ベース領域(3)の上部に形成された第1導電型のソース領域(4)と、
前記ベース領域(3)及び前記ソース領域(4)を貫通し、前記ドリフト層(2)に達するように形成された素子トレンチ(TR1)の側面及び底面に形成されたゲート絶縁膜(6)と、
前記素子トレンチ(TR1)の内部に前記ゲート絶縁膜(6)を介して形成されたゲート電極(7)と、
前記素子領域(100)における前記ドリフト層(2)内に、前記素子トレンチ(TR1)よりも深い位置に形成された第2導電型の保護拡散領域(11)と、
前記ベース領域(3)の下部に形成された第1導電型の電流拡散層(30)と、
前記素子領域(100)を囲む終端領域(200)において、側面が前記ベース領域(3)に接する終端トレンチ(TR2)内に、絶縁膜(6P)を介して形成され、前記ゲート電極(7)と電気的に接続されたゲート引き出し電極(7P)と、
前記終端領域(200)において、前記終端トレンチ(TR2)よりも深い位置に形成された第2導電型の終端拡散領域(12)と、
を備え、
断面視において、
前記保護拡散領域(11)は、前記素子領域(100)内で前記終端領域(200)に最も近い場所に配置された第1の保護拡散領域(11A)と、前記第1の保護拡散領域(11A)と第1間隔(SP1)を介して配置された第2の保護拡散領域(11B)と、を有し、
前記終端拡散領域(12)と前記第1の保護拡散領域(11A)との間の距離である第2間隔(SP2)は、前記第1間隔(SP1)よりも大きく、
前記電流拡散層(30)は、前記第1の保護拡散領域(11A)と前記第2の保護拡散領域(11B)との間に位置し前記ドリフト層(2)の不純物濃度よりも高い不純物濃度を有する第1の電流拡散層(31)と、前記第1の保護拡散領域(11A)と前記終端拡散領域(12)との間に位置し前記第1の電流拡散層(31)の厚さと同じ厚さを有する第2の電流拡散層(32D,32C)と、を有し、
前記第2の電流拡散層(32D,32C)は、前記第1の電流拡散層(31)よりも深く位置する領域を有する、
電力用半導体装置(504,505)。 - 前記第2の電流拡散層(32C)は、前記第1の電流拡散層(31)よりも深く位置する第1の領域(32j)と、前記第1の領域(32j)よりも浅く位置する第2の領域(32k)とを含む、請求項11に記載の電力用半導体装置(505)。
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