JPWO2016104401A1 - 波長変換部材及びその製造方法 - Google Patents
波長変換部材及びその製造方法 Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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Abstract
Description
PETフィルム/SiO2層/PETフィルムの3層構造フィルムで、水蒸気透過度が6×10−3(g/m2・day)のバリア層。バリア層の厚みは49μm。
PETフィルム/SiO2層/PETフィルムの3層構造で、水蒸気透過度が9(g/m2・day)のバリア層。バリア層の厚みは50μm。
シクロオレフィン系のフィルム。
バリア層がない量子ドット層のみで構成された波長変換部材。
図8に示す波長変換部材。なお、量子ドット層の上面で、バリア層の巻き始端と巻き終端とを重ねて熱圧着した。
図9に示す波長変換部材。なお、バリア層の巻き始端と巻き終端とを量子ドット層の両脇にて重ねて熱圧着した。
[サンプル12]
バリア層がない量子ドット層のみで構成された波長変換部材。
図8に示す波長変換部材。なお、量子ドット層の上面で、バリア層の巻き始端と巻き終端とを重ねて熱圧着した。
図9に示す波長変換部材。なお、バリア層の巻き始端と巻き終端とを量子ドット層の両脇にて重ねて熱圧着した。
Claims (23)
- 量子ドットを有する量子ドット層と、
少なくとも前記量子ドット層の両側に形成されたバリア層と、を有し、
前記バリア層の水蒸気透過度は、9(g/m2・day)よりも低いことを特徴とする波長変換部材。 - 前記水蒸気透過度は、0.1(g/m2・day)以下であることを特徴とする請求項1に記載の波長変換部材。
- 前記バリア層は前記量子ドット層の全周に形成されていることを特徴とする請求項1又は請求項2に記載の波長変換部材。
- 前記量子ドット層に対する同じ側の脇にて前記バリア層の巻き始端と巻き終端とが接合されていることを特徴とする請求項3に記載の波長変換部材。
- 前記量子ドット層の両脇で前記量子ドット層の上下両側に配置された前記バリア層同士が接合されていることを特徴とする請求項3に記載の波長変換部材。
- 前記量子ドット層は成形体で形成され、あるいはインクジェット法により形成されることを特徴とする請求項1ないし請求項5のいずれかに記載の波長変換部材。
- 前記バリア層は、少なくとも有機層を有して形成されていることを特徴とする請求項1ないし請求項6のいずれかに記載の波長変換部材。
- 前記バリア層は、積層構造からなり、前記量子ドット層と対向する最内側層に前記有機層が形成されていることを特徴とする請求項7に記載の波長変換部材。
- 前記バリア層には、前記最内側層の外側に無機層が設けられていることを特徴とする請求項8に記載の波長変換部材。
- 前記有機層は、複数層設けられ、前記有機層と前記有機層との間に無機層が介在していることを特徴とする請求項7に記載の波長変換部材。
- 前記無機層は、SiO2層で形成されることを特徴とする請求項9又は請求項10に記載の波長変換部材。
- 前記有機層は、前記量子ドット層と接して形成されていることを特徴とする請求項7ないし請求項11のいずれかに記載の波長変換部材。
- 前記有機層は、PETフィルムで形成されることを特徴とする請求項7ないし請求項12のいずれかに記載の波長変換部材。
- 前記量子ドット層には増粘剤が含まれていることを特徴とする請求項1ないし請求項13のいずれかに記載の波長変換部材。
- 前記量子ドット層には光散乱剤が含まれていることを特徴とする請求項1ないし請求項14のいずれかに記載の波長変換部材。
- 前記バリア層の表面にマット処理が施されていることを特徴とする請求項1ないし請求項15のいずれかに記載の波長変換部材。
- 量子ドットを有する量子ドット層の少なくとも両側に水蒸気透過度が9(g/m2・day)よりも低い材質からなるバリア層を形成することを特徴とする波長変換部材の製造方法。
- 前記量子ドット層の全周を前記バリア層にて覆うことを特徴とする請求項17に記載の波長変換部材の製造方法。
- 下側のバリア層の表面に間隔を空けて複数の前記量子ドット層を形成する工程、
前記下側のバリア層の表面から複数の前記量子ドット層の表面にかけて上側のバリア層を形成する工程、
前記量子ドット層の間の前記下側のバリア層と前記上側のバリア層とを切断して各量子ドット層毎に分断する工程、を有することを特徴とする請求項18に記載の波長変換部材の製造方法。 - 前記量子ドット層を成形体で形成し、あるいはインクジェット法により形成することを特徴とする請求項17ないし請求項19のいずれかに記載の波長変換部材の製造方法。
- 前記バリア層は有機層を有し、前記有機層を前記量子ドット層と対向する最内側に向けることを特徴とする請求項17ないし請求項20のいずれかに記載の波長変換部材の製造方法。
- 複数の有機層と、前記有機層と前記有機層との間に介在する無機層とを有する前記バリア層を用いて、前記量子ドット層と対向する最内側及び前記バリア層の最表面を前記有機層とすることを特徴とする請求項17ないし請求項20のいずれかに記載の波長変換部材の製造方法。
- 前記量子ドット層に、増粘剤を含めることを特徴とする請求項17ないし請求項22のいずれかに記載の波長変換部材の製造方法。
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