JPWO2016017068A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2016017068A1 JPWO2016017068A1 JP2016537724A JP2016537724A JPWO2016017068A1 JP WO2016017068 A1 JPWO2016017068 A1 JP WO2016017068A1 JP 2016537724 A JP2016537724 A JP 2016537724A JP 2016537724 A JP2016537724 A JP 2016537724A JP WO2016017068 A1 JPWO2016017068 A1 JP WO2016017068A1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
1つの基板上にハーフブリッジ構成の2つの窒化物半導体素子である第1トランジスタと第2トランジスタとを形成し且つパッドオンエレメント構造を作製する場合を考える。前記第1トランジスタであるハイサイドトランジスタのソース電極と前記第2トランジスタであるローサイドトランジスタのドレイン電極とは、前記半導体素子上に形成した配線で接続することでハーフブリッジ構成とする。前記ハーフブリッジ用の出力パッドとして働くスイッチノードパッドは、前記配線に接続して設ける。
本開示の第1実施形態にかかる窒化物半導体装置について、図1A〜図5Fを用いて説明する。
以下、本開示の第1実施形態の第1変形例に係る窒化物半導体装置について、図6A及び図6Bを参照しながら説明する。本変形例において、第1実施形態と実質的に同一の構成については説明を省略する場合がある。
以下、第1実施形態の第2変形例に係る窒化物半導体装置について、図7A及び図7Bを参照しながら説明する。本変形例において、第1実施形態と実質的に同一の構成については、説明を省略することがある。
以下、第1実施形態の第3変形例に係る窒化物半導体装置について、図8A及び図8Bを参照しながら説明する。本変形例において、第1実施形態と実質的に同一の構成については説明を省略する場合がる。
以下、第2実施形態に係る窒化物半導体装置について、図面を参照しながら説明する。本実施形態において、上記実施形態及び変形例と実質的に同一の構成については説明を省略する場合がある。
以下、第3実施形態に係る窒化物半導体装置について、図面を参照しながら説明する。本実施形態において、上記実施形態及び変形例と実質的に同一の構成については説明を省略し、異なる構成についてのみ説明する。
以下、第3実施形態の第1変形例に係る窒化物半導体装置について適宜、図面を参照しながら説明する。本変形例において、上記実施形態及び変形例と実質的に同一の構成については説明を省略する場合がある。
以下、第3実施形態の第2変形例に係る窒化物半導体装置について適宜、図面を参照しながら説明する。本変形例において、上記実施形態及び変形例と実質的に同一の構成については説明を省略する場合がある。
1b 第1ドレイン電極
1c 第1ゲート電極
2a 第2ソース電極
2b 第2ドレイン電極
2c 第2ゲート電極
3 第1ゲート電極配線
4 第2ゲート電極配線
5 第1絶縁膜
5a 開口部
11a 第1ソース配線
11b 第1ドレイン配線
11c 第1ゲート配線
12a 第2ソース配線
12b 第2ドレイン配線
12c 第2ゲート配線
13 第2絶縁膜
13a 開口部
13b 開口部
14 第1ドレインパッド
15 第1ソースパッド
16 第1共通配線
17 第2共通配線
18 第1ゲートパッド
19 第2ゲートパッド
20 第3絶縁膜
21 開口部
22 スイッチノードの回路基板接続部
23 第1ソースパッドの基板接続部
24 第1ドレインパッドの回路基板接続部
25 第1ゲートパッドの回路基板接続部
26 第2ゲートパッドの回路基板接続部
27 配線パッド
30 回路基板側のスイッチノード用メタルプレーン層
31 回路基板側のソース用メタルプレーン層
32 回路基板側のドレイン用メタルプレーン層
33 回路基板側のハイサイドゲート用メタルプレーン層
34 回路基板側のローサイドゲート用メタルプレーン層
41 第1縦配線
42 第2縦配線
43 第3縦配線
44 第1横配線
45a 第2横配線
45b 第2横配線
46 第3横配線
51 第2ドレインパッド
52 第2ソースパッド
53 第3ゲートパッド
54 第4ゲートパッド
60 第1ビア開口部
61 第1メタルプレーン層
62 第1ビア
63 第3共通配線
64 ドレイン用メタルプレーン層
65 ソース用メタルプレーン層
66 ハイサイドゲート用メタルプレーン層
67 ローサイドゲート用メタルプレーン層
68 スイッチノード用メタルプレーン層
70 第2ビア開口部
71 第2メタルプレーン層
72 第2ビア
73 第4共通配線
80 第3ビア開口部
81 第3メタルプレーン層
82 第3ビア
83 第5共通配線
101 ハイサイドトランジスタ
102 ローサイドトランジスタ
103 窒化物半導体層
200 窒化物半導体素子
201 実装用回路基板
Claims (14)
- 基板と、
前記基板の上に配置された半導体層と、
前記半導体層の上方に配置された第1ゲート電極、複数の第1ドレイン電極および複数の第1ソース電極を有する第1トランジスタと、
前記半導体層の上方に配置された第2ゲート電極、複数の第2ドレイン電極および複数の第2ソース電極を有する第2トランジスタと、
前記第1ドレイン電極の上方に配置され、前記第1ドレイン電極と電気的に接続され、かつ第1方向に延びる第1ドレインパッドと、
前記第2ソース電極の上方に配置され、前記第2ソース電極と電気的に接続され、かつ前記第1方向に沿って配置された複数の第1ソースパッドと、
各々が前記第1ソース電極の上方および前記第2ドレイン電極の上方に配置され、前記第1ソース電極および前記第2ドレイン電極と電気的に接続され、かつ前記第1方向に延びる複数の第1共通配線と、
各々が前記第1共通配線と接続され、前記第1方向と交差する第2方向に延びる複数の第2共通配線とを備える
半導体装置。 - 前記第1ソースパッドは、隣接する前記複数の第2共通配線の間に配置されている
請求項1に記載の半導体装置。 - 前記複数の第1共通配線は、第1縦配線、第2縦配線、および第3縦配線を有し、
前記複数の第2共通配線は、第1横配線、第2横配線、および第3横配線を有し、
前記第1縦配線と前記第2縦配線とは、前記第1横配線および前記第2横配線によって接続され、
前記第2縦配線と前記第3縦配線とは、前記第3横配線によって接続され、
平面視において、前記第3横配線は、前記第1方向での前記第1横配線と前記第2横配線との間の位置に配置されている
請求項1または2に記載の半導体装置。 - 前記第1縦配線、前記第2縦配線、および前記第3縦配線は、互いに隣接して配置され、
前記第1横配線、前記第2横配線、および前記第3横配線は、互いに隣接して配置されている
請求項3に記載の半導体装置。 - 前記第2トランジスタの上方、且つ、前記複数の第1共通配線の下方には、前記第2方向に延びる複数の第2ソース配線および複数の第2ドレイン配線が配置されている
請求項1から4のいずれか一項に記載の半導体装置。 - 前記複数の第2共通配線は、前記複数の第2ソース配線の一部および前記複数の第2ドレイン配線の一部を覆う
請求項5に記載の半導体装置。 - 前記半導体装置は、さらに、
前記複数の第1ソースパッドの上方および前記複数の第2共通配線の上方に配置された絶縁膜を備え、
前記絶縁膜には、前記複数の第1ソースパッドおよび前記複数の第2共通配線の一部を露出する複数の開口部が形成されている
請求項1から6のいずれか一項に記載の半導体装置。 - 基板と、
前記基板の上に配置された半導体層と、
前記半導体層の上に配置された第1ゲート電極、複数の第1ドレイン電極および複数の第1ソース電極を有する第1トランジスタと、
前記半導体層の上に配置された第2ゲート電極、複数の第2ドレイン電極および複数の第2ソース電極を有する第2トランジスタと、
前記第1ドレイン電極の上方に配置され、前記第1ドレイン電極と電気的に接続され、かつ第1方向に延びる第1ドレインパッドと、
前記第2ソース電極の上方に配置され、前記第2ソース電極と電気的に接続され、かつ前記第1方向に延びる第1ソースパッドと、
前記複数の第1ソース電極の上方および前記複数の第2ドレイン電極の上方に配置され、前記第1ソース電極および前記第2ドレイン電極と電気的に接続され、かつ前記第1方向に延びる複数の第1共通配線と、
前記複数の第1共通配線と接続され、前記第1方向と交差する第2方向に延びる、単一の第2共通配線とを備える
半導体装置。 - 前記半導体装置は、さらに、
前記第1ソースパッドの上方および前記単一の第2共通配線の上方に配置された絶縁膜を備え、
前記絶縁膜には、前記第1ソースパッドおよび前記単一の第2共通配線の一部を露出する複数の開口部が形成されている
請求項8に記載の半導体装置。 - 前記単一の第2共通配線は、前記複数の第1共通配線の上方に配置されている
請求項8に記載の半導体装置。 - 前記半導体装置は、さらに、
実装用回路基板を備え、
前記実装用回路基板は、少なくとも1つの第1ビア開口部と、
前記複数の第1共通配線と電気的に接続されるフリップチップ実装用の複数の第1メタルプレーン層と、
前記第1ビア開口部内に設けられたビアを介して、前記第1メタルプレーン層と電気的に接続された第3共通配線とを有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体装置は、さらに、
実装用回路基板を備え、
前記実装用回路基板は、少なくとも1つの第2ビア開口部と、
前記複数の第1ソースパッドと電気的に接続されるフリップチップ実装用の複数の第2メタルプレーン層と、
前記第2ビア開口部内に設けられたビアを介して、前記第2メタルプレーン層と電気的に接続された第4共通配線とを有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体装置は、さらに、
実装用回路基板を備え、
前記実装用回路基板は、少なくとも1つの第3ビア開口部と、
前記複数の第2ドレインソースパッドと電気的に接続されるフリップチップ実装用の複数の第3メタルプレーン層と、
前記第3ビア開口部内に設けたビアを介して前記第3メタルプレーン層と電気的に接続された第5共通配線とを有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体層は、窒化物半導体からなる
請求項1から13のいずれか一項に記載の半導体装置。
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