JPWO2015198435A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2015198435A1 JPWO2015198435A1 JP2016528930A JP2016528930A JPWO2015198435A1 JP WO2015198435 A1 JPWO2015198435 A1 JP WO2015198435A1 JP 2016528930 A JP2016528930 A JP 2016528930A JP 2016528930 A JP2016528930 A JP 2016528930A JP WO2015198435 A1 JPWO2015198435 A1 JP WO2015198435A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 10
- 238000002485 combustion reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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Abstract
Description
まず、内燃機関のイグニションシステムについて説明する。
図1は、本発明の実施の形態1による半導体装置1の構成の一例を示す図であり、半導体装置1を上方から見たときの外観図である。図2は、図1のA1−A2の断面図である。図3は、図1のB1−B2の断面図である。
図7は、本発明の実施の形態2による半導体装置19の構成の一例を示す図であり、半導体装置19を上方から見たときの外観図である。
図8は、本発明の実施の形態3による半導体装置20の構成の一例を示す図であり、半導体装置20を上方から見たときの外観図である。また、図9は、図8の等価回路を示す図である。
図10は、本発明の実施の形態4による半導体装置23の構成の一例を示す図であり、半導体装置23を上方から見たときの外観図である。また、図11は、図10の等価回路を示す図である。
図12は、本発明の実施の形態5による半導体装置27の構成の一例を示す図であり、半導体装置27を上方から見たときの外観図である。また、図13は、図12の等価回路を示す図である。
図14は、本発明の実施の形態6による半導体装置28の構成の一例を示す図であり、半導体装置28を上方から見たときの外観図である。また、図15は、図14の等価回路を示す図である。
本発明の実施の形態7では、実施の形態1〜6における半導体基板9を、ケイ素基板に代えて炭化ケイ素基板とすることを特徴としている。構成は、実施の形態1〜6と同様であるため、ここでは説明を省略する。
Claims (7)
- 半導体基板(9)上に複数のトランジスタのセルが配置されたトランジスタセル領域(37)を有する半導体装置(1)であって、
前記半導体基板(9)上に前記トランジスタセル領域(37)を避けて配置され、かつ各前記セルの一方電流電極と電気的に接続された電極パッド(2)を備え、
前記トランジスタセル領域(37)は、前記電極パッド(2)からの距離に依存して電流駆動能力が異なる複数の領域(6,7,8)からなることを特徴とする、半導体装置。 - 前記電極パッド(2)の形状は、円形、楕円形、あるいは少なくとも5つ以上の頂点を有する多角形であることを特徴とする、請求項1に記載の半導体装置。
- 少なくとも一部の前記セルは、前記一方電流電極に加え、当該一方電流電極よりも面積が小さい電流検出電極を備えることを特徴とする、請求項1に記載の半導体装置。
- 前記半導体装置の温度を検出する温度検出用ダイオード(24)をさらに備えることを特徴とする、請求項1に記載の半導体装置。
- 前記温度検出用ダイオード(24)のアノードは、前記電極パッド(2)に接続されることを特徴とする、請求項4に記載の半導体装置。
- 前記半導体装置の温度を検出する温度検出用ダイオード(24)をさらに備えることを特徴とする、請求項3に記載の半導体装置。
- 前記半導体基板(9)は、炭化ケイ素基板であることを特徴とする、請求項1に記載の半導体装置。
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PCT/JP2014/066941 WO2015198435A1 (ja) | 2014-06-26 | 2014-06-26 | 半導体装置 |
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JP (1) | JP6289635B2 (ja) |
CN (1) | CN106463537B (ja) |
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JP6507609B2 (ja) * | 2014-12-08 | 2019-05-08 | 富士電機株式会社 | 半導体装置 |
JP7450330B2 (ja) * | 2018-09-27 | 2024-03-15 | 富士電機株式会社 | 半導体素子及び半導体装置 |
KR102110249B1 (ko) * | 2018-12-07 | 2020-05-13 | 현대오트론 주식회사 | 전력 반도체 칩 |
JP7076387B2 (ja) | 2019-01-16 | 2022-05-27 | 三菱電機株式会社 | 半導体装置 |
JP7024891B2 (ja) * | 2019-02-07 | 2022-02-24 | 富士電機株式会社 | 半導体装置 |
Citations (5)
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JPH10112541A (ja) * | 1996-10-07 | 1998-04-28 | Toshiba Corp | 半導体装置 |
JP2000058820A (ja) * | 1998-08-07 | 2000-02-25 | Hitachi Ltd | パワー半導体素子及びパワーモジュール |
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JP2007529115A (ja) * | 2003-12-30 | 2007-10-18 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
JP2010004003A (ja) * | 2008-05-20 | 2010-01-07 | Mitsubishi Electric Corp | パワー半導体装置 |
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JPS5987828A (ja) | 1982-11-12 | 1984-05-21 | Hitachi Ltd | 半導体装置 |
JP3144585B2 (ja) | 1991-12-10 | 2001-03-12 | 日本インター株式会社 | 半導体装置 |
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- 2014-06-26 CN CN201480080154.4A patent/CN106463537B/zh active Active
- 2014-06-26 US US15/121,499 patent/US9859238B2/en active Active
- 2014-06-26 WO PCT/JP2014/066941 patent/WO2015198435A1/ja active Application Filing
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US9859238B2 (en) | 2018-01-02 |
CN106463537B (zh) | 2020-01-03 |
CN106463537A (zh) | 2017-02-22 |
DE112014006764T5 (de) | 2017-04-27 |
WO2015198435A1 (ja) | 2015-12-30 |
US20160358869A1 (en) | 2016-12-08 |
DE112014006764B4 (de) | 2022-09-01 |
JP6289635B2 (ja) | 2018-03-07 |
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