JPWO2014208352A1 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
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- JPWO2014208352A1 JPWO2014208352A1 JP2015523973A JP2015523973A JPWO2014208352A1 JP WO2014208352 A1 JPWO2014208352 A1 JP WO2014208352A1 JP 2015523973 A JP2015523973 A JP 2015523973A JP 2015523973 A JP2015523973 A JP 2015523973A JP WO2014208352 A1 JPWO2014208352 A1 JP WO2014208352A1
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- epoxy resin
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
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- 229920003235 aromatic polyamide Polymers 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
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- 235000010233 benzoic acid Nutrition 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
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- 238000007664 blowing Methods 0.000 description 1
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- 238000009835 boiling Methods 0.000 description 1
- XSEUMFJMFFMCIU-UHFFFAOYSA-N buformin Chemical compound CCCC\N=C(/N)N=C(N)N XSEUMFJMFFMCIU-UHFFFAOYSA-N 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N butadiene group Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
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- DAQREMPZDNTSMS-UHFFFAOYSA-M butyl(triphenyl)phosphanium;thiocyanate Chemical compound [S-]C#N.C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 DAQREMPZDNTSMS-UHFFFAOYSA-M 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 150000001868 cobalt Chemical class 0.000 description 1
- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 1
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- 239000011231 conductive filler Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-FDGPNNRMSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O ZKXWKVVCCTZOLD-FDGPNNRMSA-N 0.000 description 1
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- DEKLIKGLDMCMJG-UHFFFAOYSA-M decanoate;tetrabutylphosphanium Chemical compound CCCCCCCCCC([O-])=O.CCCC[P+](CCCC)(CCCC)CCCC DEKLIKGLDMCMJG-UHFFFAOYSA-M 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
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- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- GIOMRLALSSVJPB-UHFFFAOYSA-N diethoxy-phenyl-propylsilane Chemical compound CCC[Si](OCC)(OCC)C1=CC=CC=C1 GIOMRLALSSVJPB-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
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- OJLGWNFZMTVNCX-UHFFFAOYSA-N dioxido(dioxo)tungsten;zirconium(4+) Chemical compound [Zr+4].[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O OJLGWNFZMTVNCX-UHFFFAOYSA-N 0.000 description 1
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- 150000004820 halides Chemical class 0.000 description 1
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- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
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- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
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- AQBLLJNPHDIAPN-LNTINUHCSA-K iron(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Fe+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AQBLLJNPHDIAPN-LNTINUHCSA-K 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
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- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- 150000002696 manganese Chemical class 0.000 description 1
- ZQZQURFYFJBOCE-FDGPNNRMSA-L manganese(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Mn+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZQZQURFYFJBOCE-FDGPNNRMSA-L 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
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- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
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- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
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- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
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- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
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- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
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- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
- CUQCMXFWIMOWRP-UHFFFAOYSA-N phenyl biguanide Chemical compound NC(N)=NC(N)=NC1=CC=CC=C1 CUQCMXFWIMOWRP-UHFFFAOYSA-N 0.000 description 1
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- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
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- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- VMYXFDVIMUEKNP-UHFFFAOYSA-N trimethoxy-[5-(oxiran-2-yl)pentyl]silane Chemical compound CO[Si](OC)(OC)CCCCCC1CO1 VMYXFDVIMUEKNP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- JBCJMTUHAXHILC-UHFFFAOYSA-N zinc;octanoic acid Chemical compound [Zn+2].CCCCCCCC(O)=O JBCJMTUHAXHILC-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
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Abstract
Description
[1] (A)窒化アルミニウム及び窒化ケイ素からなる群から選択される少なくとも1種の高熱伝導性無機充填材、
(B)エポキシ樹脂、及び
(C)硬化剤
を含む樹脂組成物であって、
(A)成分がシラン化合物で処理されている樹脂組成物。
[2] シラン化合物がフェニル基を有する、[1]に記載の樹脂組成物。
[3] シラン化合物の処理量が、高熱伝導性無機充填材100質量部に対して、0.05質量部以上である、[1]又は[2]に記載の樹脂組成物。
[4] (C)成分が、第1の硬化剤と、該第1の硬化剤とは異なる第2の硬化剤とを含み、第1の硬化剤が活性エステル系硬化剤である、[1]〜[3]のいずれかに記載の樹脂組成物。
[5] 第2の硬化剤がトリアジン構造含有硬化剤である、[4]に記載の樹脂組成物。
[6] 第2の硬化剤が、トリアジン構造含有フェノール系硬化剤又はトリアジン構造含有シアネートエステル系硬化剤である、[4]又は[5]に記載の樹脂組成物。
[7] 第2の硬化剤に対する第1の硬化剤の質量比(第1の硬化剤/第2の硬化剤)が、0.3〜2である、[4]〜[6]のいずれかに記載の樹脂組成物。
[8] [1]〜[7]のいずれかに記載の樹脂組成物を熱硬化させて得られる硬化体。
[9] 表面の算術平均粗さ(Ra)が180nm以下である、[8]に記載の硬化体。
[10] 熱伝導率が1W/m・K以上である、[8]又は[9]に記載の硬化体。
[11] [8]〜[10]のいずれかに記載の硬化体を粗化処理して得られる粗化硬化体。
[12] [11]に記載の粗化硬化体と、該粗化硬化体の表面に形成された導体層とを備える積層体。
[13] 粗化硬化体と導体層との剥離強度が0.25kgf/cm以上である、[12]に記載の積層体。
[14] [8]〜[10]のいずれかに記載の硬化体又は[11]に記載の粗化硬化体を含む多層プリント配線板。
[15] [14]に記載の多層プリント配線板を含む半導体装置。
本発明の樹脂組成物は、(A)窒化アルミニウム及び窒化ケイ素からなる群から選択される少なくとも1種の高熱伝導性無機充填材、(B)エポキシ樹脂、及び(C)硬化剤を含み、(A)成分がシラン化合物で処理されていることを特徴とする。
本発明の(A)成分は、窒化アルミニウム及び窒化ケイ素からなる群から選択される少なくとも1種の高熱伝導性無機充填材であり、シラン化合物で処理されていることを特徴とする。
Si(R1)n(R2)4−n (1)
[式中、
R1は、−R11、−R11’−R12、又は−R12’−R11を表し、ここで、R11はアルキル基又はアリール基を表し、R12はアミノ基、エポキシ基若しくはメルカプト基、又はアミノ基、エポキシ基若しくはメルカプト基を含有する1価の基を表し、R11’はR11で表される1価の基から1個の水素原子を除いた2価の基を表し、R12’はR12で表される1価の基から1個の水素原子を除いた2価の基を表し、
R2は、水素原子又はアルコキシ基を表し、
nは1〜3の整数を表す。R1が複数存在する場合、それらは同一でも相異なっていてもよく、R2が複数存在する場合、それらは同一でも相異なっていてもよい。]
なお、本発明において、樹脂組成物中の各成分の含有量は、別途明示のない限り、樹脂組成物中の不揮発成分の合計を100質量%としたときの値である。
本発明の樹脂組成物に含まれる(B)成分はエポキシ樹脂である。
本発明の樹脂組成物に含まれる(C)成分は硬化剤である。
本発明の樹脂組成物は、必要に応じて、(D)窒化アルミニウム及び窒化ケイ素以外の無機充填材(以下、単に「無機充填材」という。)、(E)熱可塑性樹脂、(F)硬化促進剤、(G)難燃剤及び(H)ゴム粒子等の添加剤を含んでいてもよい。
無機充填材としては、例えば、シリカ、アルミナ、ガラス、コーディエライト、シリコン酸化物、硫酸バリウム、炭酸バリウム、タルク、クレー、雲母粉、酸化亜鉛、ハイドロタルサイト、ベーマイト、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、酸化マグネシウム、窒化ホウ素、窒化マンガン、ホウ酸アルミニウム、チタン酸バリウム、炭酸ストロンチウム、チタン酸ストロンチウム、チタン酸カルシウム、チタン酸マグネシウム、チタン酸ビスマス、酸化チタン、酸化ジルコニウム、チタン酸ジルコン酸バリウム、ジルコン酸バリウム、ジルコン酸カルシウム、リン酸ジルコニウム、及びリン酸タングステン酸ジルコニウム等が挙げられる。無機充填材は1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。
熱可塑性樹脂としては、例えば、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリオレフィン樹脂、ポリブタジエン樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリエーテルスルホン樹脂、ポリフェニレンエーテル樹脂、及びポリスルホン樹脂等が挙げられる。熱可塑性樹脂は、1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。
硬化促進剤としては、例えば、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤、グアニジン系硬化促進剤等が挙げられ、リン系硬化促進剤、アミン系硬化促進剤、イミダゾール系硬化促進剤が好ましく、アミン系硬化促進剤、イミダゾール系硬化促進剤がより好ましい。硬化促進剤は、1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。
難燃剤としては、例えば、有機リン系難燃剤、有機系窒素含有リン化合物、窒素化合物、シリコーン系難燃剤、金属水酸化物等が挙げられる。難燃剤は1種単独で使用してもよく、2種以上を組み合わせて使用してもよい。樹脂組成物層中の難燃剤の含有量は特に限定はされないが、0.5質量%〜10質量%が好ましく、1質量%〜9質量%がより好ましく、1.5質量%〜8質量%がさらに好ましい。
ゴム粒子としては、例えば、後述する有機溶剤に溶解せず、上述のエポキシ樹脂、硬化剤、及び熱可塑性樹脂などとも相溶しないものが使用される。このようなゴム粒子は、一般には、ゴム成分の分子量を有機溶剤や樹脂に溶解しないレベルまで大きくし、粒子状とすることで調製される。
本発明の硬化体は、本発明の樹脂組成物を熱硬化させて得られる。
本発明の粗化硬化体は、本発明の硬化体を粗化処理して得られる。
本発明の積層体は、本発明の粗化硬化体と、該粗化硬化体の表面に形成された導体層とを備える。
本発明の多層プリント配線板は、本発明の硬化体又は粗化硬化体を含む。
上記の多層プリント配線板を用いて、半導体装置を製造することができる。
まずは各種測定方法・評価方法について説明する。
(1)内層回路基板の下地処理
内層回路を両面に形成したガラス布基材エポキシ樹脂両面銅張積層板(銅箔の厚さ18μm、基板の厚さ0.3mm、松下電工(株)製「R5715ES」)の両面を、メック(株)製「CZ8100」に浸漬して銅表面の粗化処理(銅エッチング量1μm)をおこなった。
実施例及び比較例で作製した接着フィルムを、バッチ式真空加圧ラミネーター(名機(株)製「MVLP-500」)を用いて、樹脂組成物層が内層回路基板と接合するように、内層回路基板の両面にラミネート処理した。ラミネート処理は、30秒間減圧して気圧を13hPa以下とした後、120℃、圧力0.74MPaで30秒間プレスすることにより行った。
樹脂組成物層のラミネート処理後、支持体であるPETフィルムを剥離した。次いで、樹脂組成物層がラミネートされた内層回路基板を、100℃で30分間予備加熱した後、180℃で30分間加熱し、樹脂組成物層を熱硬化して硬化体を形成した。
両面に硬化体が形成された内層回路基板を、膨潤液(アトテックジャパン(株)製「スエリングディップ・セキュリガントP」、ジエチレングリコールモノブチルエーテル含有の水酸化ナトリウム水溶液)に60℃で5分間浸漬し、次いで酸化剤(アトテックジャパン(株)製「コンセントレート・コンパクトCP」、過マンガン酸カリウム濃度約6質量%、水酸化ナトリウム濃度約4質量%の水溶液)に80℃で20分間浸漬し、最後に中和液(アトテックジャパン(株)製「リダクションソリューション・セキュリガントP」、硫酸ヒドロキシルアミン水溶液)に40℃で5分間浸漬した。その後、80℃で30分間乾燥し、内層回路基板の両面に粗化硬化体を形成した。
セミアディティブ法に従って、粗化硬化体の表面に導体層を形成した。
すなわち、両面に粗化硬化体が形成された内層回路基板を、PdCl2を含む無電解メッキ用溶液に40℃で5分間浸漬し、次いで無電解銅メッキ液に25℃で20分間浸漬して、粗化硬化体表面にメッキシード層を形成した。150℃にて30分間加熱してアニール処理を行った後に、メッキシード層上にエッチングレジストを設け、エッチングによりメッキシード層をパターン形成した。次いで、硫酸銅電解メッキを行い、厚さ30μmの導体層を形成した後、190℃にて60分間アニール処理し、粗化硬化体の表面に導体層を形成した。
硬化体の表面の算術平均粗さ(Ra値)、粗化硬化体の表面の算術平均粗さ(Ra値)及び二乗平均平方根粗さ(Rq値)は、非接触型表面粗さ計(ビーコインスツルメンツ社製「WYKO NT3300」)を用いて、VSIコンタクトモード、50倍レンズにより測定範囲を121μm×92μmとして得られる数値により求めた。各硬化体及び粗化硬化体について、無作為に選んだ10点の平均値を求めた。
評価基板の導体層に、幅10mm、長さ100mmの部分の切込みをいれ、この一端を剥がしてつかみ具(株式会社ティー・エス・イー製のオートコム型試験機「AC−50C−SL」)で掴み、室温中にて、50mm/分の速度で垂直方向に35mmを引き剥がした時の荷重(kgf/cm)を測定し、ピール強度を求めた。
硬化体の熱拡散性は、以下の手順に従って、硬化体の熱伝導率を測定することにより評価した。すなわち、実施例及び比較例で作製した接着フィルムを、190℃で90分間加熱して樹脂組成物層を熱硬化させた。樹脂組成物層の熱硬化後、支持体であるPETフィルムを剥離し、シート状の硬化体を得た。得られた硬化体について、該硬化体の厚さ方向の熱伝導率を、ai−Phase製「ai−Phase Mobile 1u」を用いて温度波分析法により測定した。同一試験片について3回測定を行い、平均値を算出した。そして、平均値が1.5W/m・K以上の場合を「○」、平均値が1W/m・K以上1.5W/m・K未満の場合を「△」、平均値が1W/m・K未満の場合を「×」と評価した。
ナフタレン型エポキシ樹脂(DIC(株)製「HP4032SS」、エポキシ当量約144)12部、ナフチレンエーテル型エポキシ樹脂(DIC(株)製「HP6000」、エポキシ当量約250)6部、ビキシレノール型エポキシ樹脂(三菱化学(株)製「YX4000HK」、エポキシ当量約185)4部、及びフェノキシ樹脂(三菱化学(株)製「YL7553BH30」、固形分30質量%のメチルエチルケトン(MEK)とシクロヘキサノンの1:1溶液)6部を、ソルベントナフサ30部に撹拌しながら加熱溶解させた。室温にまで冷却した後、そこへ、トリアジン構造含有クレゾールノボラック樹脂(DIC(株)製「LA−3018−50P」、水酸基当量151、固形分50%の2-メトキシプロパノール溶液)9部、活性エステル系硬化剤(DIC(株)製「HPC8000−65T」、活性基当量約223、不揮発成分65質量%のトルエン溶液)10部、硬化促進剤(4−ジメチルアミノピリジン、「DMAP」、固形分5質量%のMEK溶液)2部、アミノシラン化合物(信越化学工業(株)製「KBM573」、N−フェニル−3−アミノプロピルトリメトキシシラン)0.7部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)120部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。
次いで、離型層付きPETフィルム(リンテック(株)製「PET501010」、厚さ50μm)の離型層側に、乾燥後の樹脂組成物層の厚さが30μmとなるように樹脂ワニスを均一に塗布し、80〜120℃(平均100℃)で4分間乾燥させて、接着フィルムを作製した。
ビスフェノール型エポキシ樹脂(新日鐵化学(株)製「ZX1059」、ビスフェノールA型とビスフェノールF型の1:1混合品、エポキシ当量約169)6部、ビフェニル型エポキシ樹脂(日本化薬(株)製「NC3000H」、エポキシ当量約288)9部、ビキシレノール型エポキシ樹脂(三菱化学(株)製「YX4000HK」、エポキシ当量約185)12部、フルオレン型エポキシ樹脂(三菱化学(株)製「YL7800BH40」、固形分40質量%のメチルエチルケトン(MEK)とシクロヘキサノンの1:1溶液、エポキシ当量約4100)6部を、ソルベントナフサ40部に撹拌しながら加熱溶解させた。室温にまで冷却した後、そこへ、トリアジン構造含有フェノールノボラック樹脂(DIC(株)製「LA−1356」、水酸基当量146)の固形分60%のMEK溶液10部、活性エステル型硬化剤(DIC(株)製「HPC8000−65T」、活性基当量約223の不揮発成分65質量%のトルエン溶液)10部、硬化促進剤(4−ジメチルアミノピリジン、固形分5質量%のMEK溶液)2部、シラン化合物(信越化学工業(株)製「KBM103」、フェニルトリメトキシシラン)1部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)170部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。次いで、実施例1と同様にして接着フィルムを作製した。
ナフタレン型エポキシ樹脂(DIC(株)製「HP4032SS」、エポキシ当量約144)4部、ビフェニル型エポキシ樹脂(日本化薬(株)製「NC3000H」、エポキシ当量約288)12部、ビキシレノール型エポキシ樹脂(三菱化学(株)製「YX4000HK」、エポキシ当量約185)6部、フェノキシ樹脂(三菱化学(株)製「YL7553BH30」、固形分30質量%のメチルエチルケトン(MEK)とシクロヘキサノンの1:1溶液)9部を、ソルベントナフサ30部に撹拌しながら加熱溶解させた。室温にまで冷却した後、そこへ、トリアジン構造含有シアネートエステル樹脂(ロンザジャパン(株)製「BA230S75」、シアネート当量約232、不揮発成分75質量%のMEK溶液)12部、フェノールノボラック型シアネートエステル樹脂(ロンザジャパン(株)製「PT30S」、シアネート当量約133、不揮発分85質量%のMEK溶液)3部、活性エステル系硬化剤(DIC(株)製「HPC8000−65T」、活性基当量約223の不揮発分65質量%のトルエン溶液)12部、硬化促進剤(4−ジメチルアミノピリジン、固形分5質量%のMEK溶液)0.4部、硬化促進剤(東京化成(株)製、コバルト(III)アセチルアセトナート、固形分1質量%のMEK溶液)3部、難燃剤(三光(株)製「HCA−HQ」、10−(2,5−ジヒドロキシフェニル)−10−ヒドロ−9−オキサ−10−フォスファフェナンスレン−10−オキサイド、平均粒径2μm)3部、アミノシラン化合物(信越化学工業(株)製「KBM573」、N−フェニル−3−アミノプロピルトリメトキシシラン)0.6部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)110部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。次いで、実施例1と同様にして接着フィルムを作製した。
活性エステル系硬化剤(DIC(株)製「HPC8000−65T」、活性基当量約223、不揮発成分65質量%のトルエン溶液)10部に代えて、ナフトール系硬化剤(新日鐵化学(株)製「SN−485」、水酸基当量215、固形分60%のMEK溶液)10部を使用した以外は、実施例2と同様にして樹脂ワニスを調製し、接着フィルムを作製した。
トリアジン構造含有フェノールノボラック樹脂(DIC(株)製「LA−1356」水酸基当量146)の固形分60%のMEK溶液10部を添加しなかった点、及び、活性エステル系硬化剤(DIC(株)製「HPC8000−65T」、活性基当量約223、不揮発成分65質量%のトルエン溶液)の配合量を10部から24部に増量した点以外は、実施例2と同様にして樹脂ワニスを調製し、接着フィルムを作製した。
アミノシラン化合物(信越化学工業(株)製「KBM573」、N−フェニル−3−アミノプロピルトリメトキシシラン)0.7部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)120部に代えて、アミノシラン化合物(信越化学工業(株)製「KBM573」、N−フェニル−3−アミノプロピルトリメトキシシラン)0.7部で表面処理された窒化ケイ素(電気化学工業(株)製「SN−9S」、平均粒径1.1μm、比表面積7m2/g、比重3.4g/cm3)を使用した以外は、実施例1と同様にして樹脂ワニスを調製し、接着フィルムを作製した。
ナフタレン型エポキシ樹脂(DIC(株)製「HP4032SS」、エポキシ当量約144)4部、ビフェニル型エポキシ樹脂(日本化薬(株)製「NC3000H」、エポキシ当量約288)12部、ビキシレノール型エポキシ樹脂(三菱化学(株)製「YX4000HK」、エポキシ当量約185)6部、フェノキシ樹脂(三菱化学(株)製「YL7553BH30」、固形分30質量%のメチルエチルケトン(MEK)とシクロヘキサノンの1:1溶液)9部を、ソルベントナフサ30部に撹拌しながら加熱溶解させた。室温にまで冷却した後、そこへ、トリアジン構造含有シアネートエステル樹脂(ロンザジャパン(株)製「BA230S75」、シアネート当量約232、不揮発成分75質量%のMEK溶液)24部、フェノールノボラック型シアネートエステル樹脂(ロンザジャパン(株)製「PT30S」、シアネート当量約133、不揮発分85質量%のMEK溶液)3部、硬化促進剤(4−ジメチルアミノピリジン、固形分5質量%のMEK溶液)0.4部、硬化促進剤(東京化成(株)製、コバルト(III)アセチルアセトナート、固形分1質量%のMEK溶液)3部、難燃剤(三光(株)製「HCA−HQ」、10−(2,5−ジヒドロキシフェニル)−10−ヒドロ−9−オキサ−10−フォスファフェナンスレン−10−オキサイド、平均粒径2μm)3部、表面処理をしていない窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)100部を混合し、高速回転ミキサーで均一に分散して、樹脂ワニスを調製した。次いで、実施例1と同様にして接着フィルムを作製した。
シラン化合物(信越化学工業(株)製「KBM103」、フェニルトリメトキシシラン)1部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)170部に代えて、表面処理をしていない窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)170部を使用した以外は、実施例5と同様にして樹脂ワニスを調製し、接着フィルムを作製した。
アミノシラン化合物(信越化学工業(株)製「KBM573」、N−フェニル−3−アミノプロピルトリメトキシシラン)0.7部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)120部に代えて、アルミニウム系カップリング剤(味の素ファインテクノ製「プレンアクト AL−M」、アセトアルコキシアルミニウムジイソプロピレート)0.7部で表面処理された窒化アルミニウム((株)トクヤマ製「シェイパルH」、平均粒径1.1μm、比表面積2.6m2/g、比重3.3g/cm3)120部を使用した以外は、実施例1と同様にして樹脂ワニスを調製し、接着フィルムを作製した。
Claims (15)
- (A)窒化アルミニウム及び窒化ケイ素からなる群から選ばれる少なくとも1種の高熱伝導性無機充填材、
(B)エポキシ樹脂、及び
(C)硬化剤
を含む樹脂組成物であって、
(A)成分がシラン化合物で処理されている樹脂組成物。 - シラン化合物がフェニル基を有する、請求項1に記載の樹脂組成物。
- シラン化合物の処理量が、高熱伝導性無機充填材100質量部に対して、0.05質量部以上である、請求項1又は2に記載の樹脂組成物。
- (C)成分が、第1の硬化剤と、該第1の硬化剤とは異なる第2の硬化剤とを含み、第1の硬化剤が活性エステル系硬化剤である、請求項1〜3のいずれか1項に記載の樹脂組成物。
- 第2の硬化剤がトリアジン構造含有硬化剤である、請求項4に記載の樹脂組成物。
- 第2の硬化剤が、トリアジン構造含有フェノール系硬化剤又はトリアジン構造含有シアネートエステル系硬化剤である、請求項4又は5に記載の樹脂組成物。
- 第2の硬化剤に対する第1の硬化剤の質量比(第1の硬化剤/第2の硬化剤)が、0.3〜2である、請求項4〜6のいずれか1項に記載の樹脂組成物。
- 請求項1〜7のいずれか1項に記載の樹脂組成物を熱硬化させて得られる硬化体。
- 表面の算術平均粗さ(Ra)が180nm以下である、請求項8に記載の硬化体。
- 熱伝導率が1W/m・K以上である、請求項8又は9に記載の硬化体。
- 請求項8〜10のいずれか1項に記載の硬化体を粗化処理して得られる粗化硬化体。
- 請求項11に記載の粗化硬化体と、該粗化硬化体の表面に形成された導体層とを備える積層体。
- 粗化硬化体と導体層との剥離強度が0.25kgf/cm以上である、請求項12に記載の積層体。
- 請求項8〜10のいずれか1項に記載の硬化体又は請求項11に記載の粗化硬化体を含む多層プリント配線板。
- 請求項14に記載の多層プリント配線板を含む半導体装置。
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CN105308121A (zh) | 2016-02-03 |
TW201518389A (zh) | 2015-05-16 |
TWI699399B (zh) | 2020-07-21 |
JP6595336B2 (ja) | 2019-10-23 |
WO2014208352A1 (ja) | 2014-12-31 |
KR20160023679A (ko) | 2016-03-03 |
KR102288571B1 (ko) | 2021-08-12 |
CN105308121B (zh) | 2018-09-18 |
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