JPWO2014192083A1 - 太陽電池セルおよびその製造方法、太陽電池モジュール - Google Patents
太陽電池セルおよびその製造方法、太陽電池モジュール Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 97
- 239000012535 impurity Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 238000009792 diffusion process Methods 0.000 claims abstract description 61
- 239000007769 metal material Substances 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 286
- 229910052709 silver Inorganic materials 0.000 claims description 286
- 239000004332 silver Substances 0.000 claims description 286
- 238000007747 plating Methods 0.000 claims description 106
- 239000010949 copper Substances 0.000 claims description 82
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 38
- 229910052802 copper Inorganic materials 0.000 claims description 38
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000007645 offset printing Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 198
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 49
- 229910052710 silicon Inorganic materials 0.000 description 47
- 239000010703 silicon Substances 0.000 description 47
- 229910052782 aluminium Inorganic materials 0.000 description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 29
- 238000007650 screen-printing Methods 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 23
- 238000007646 gravure printing Methods 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 239000000463 material Substances 0.000 description 17
- 230000007423 decrease Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000010304 firing Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000003848 UV Light-Curing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 4
- 239000002003 electrode paste Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1−1〜図1−4は、本発明の実施の形態1にかかる太陽電池セル1の構成を説明するための図であり、図1−1は、受光面側から見た太陽電池セル1の上面図、図1−2は、受光面と反対側(裏面側)から見た太陽電池セル1の下面図、図1−3は、太陽電池セル1の要部断面図である。図1−3は、図1−1のA−A方向における要部断面図である。図1−4は、図1−3における受光面側電極の表銀グリッド電極近傍を拡大して示す要部断面図である。
実施の形態2ではディスペンサーを用いる場合について説明する。実施の形態2では、実施の形態1で説明した方法において、グラビア印刷の代わりにディスペンサーを用いて銀ペースト21aを塗布し、表銀グリッド電極5の細線化を図る。この場合は、基本的にはディスペンサーのノズルの径により銀ペースト21aの印刷幅を制御して、表銀グリッド電極5の幅を制御できる。ただし、従来の銀ペーストを用いて必要な断面積を得るための吐出量を増やすと、銀ペースト粘度が低いため銀ペーストの広がりが生じ、高アスペクト比の電極形成ができない。
Claims (15)
- 受光面側である一面側に第2導電型の不純物元素が拡散された不純物拡散層を有する第1導電型の半導体基板と、
グリッド電極と前記グリッド電極に導通して前記グリッド電極よりも幅広のバス電極とからなり、前記一面側に形成されて前記不純物拡散層に電気的に接続する受光面側電極と、
前記半導体基板の前記一面側と反対側の裏面に形成されて前記不純物拡散層に電気的に接続する裏面側電極と、
を備える太陽電池セルであって、
前記受光面側電極は、前記半導体基板の一面側に直接接合した金属ペースト電極層である第1金属電極層と、前記第1金属電極層と異なるとともに前記第1金属電極層と略同等の電気抵抗率を有する金属材料からなり前記第1金属電極層上を覆って形成されためっき電極層である第2金属電極層とを備えてなり、
前記グリッド電極の断面積が300μm2以上であり、前記グリッド電極の電極幅が60μm以下であること、
を特徴とする太陽電池セル。 - 前記第1金属電極層が、銀ペースト電極層であり、
前記第2金属電極層が、銅めっき電極層であること、
を特徴とする請求項1に記載の太陽電池セル。 - 前記第2金属電極層の体積が、前記第1金属電極層の3倍以上であること、
を特徴とする請求項2に記載の太陽電池セル。 - 前記第1金属電極層および前記第2金属電極層と異なるとともに前記第1金属電極層と前記第2金属電極層との間の付着強度強化を高める金属材料からなるめっき電極層である第3金属電極層を前記第1金属電極層と前記第2金属電極層との間に有し、
前記第2金属電極層と異なるとともに前記第2金属電極層を保護する金属材料からなるめっき電極層である第4金属電極層を前記第2金属電極層上に有すること、
を特徴とする請求項1〜3のいずれか1つに記載の太陽電池セル。 - 前記第3金属電極層が、ニッケルめっき層であり、
前記第4金属電極層が、錫めっき層であること、
を特徴とする請求項4に記載の太陽電池セル。 - 前記バス電極の電極幅が1.5mm以下であり、
前記バス電極の本数が3本以上であること、
を特徴とする請求項5に記載の太陽電池セル。 - 第1導電型の半導体基板の受光面側となる一面側に第2導電型の不純物元素を拡散して前記半導体基板の一面側に不純物拡散層を形成する第1工程と、
前記不純物拡散層に電気的に接続する受光面側電極を前記半導体基板の一面側に形成する第2工程と、
前記半導体基板の他面側に電気的に接続する裏面側電極を前記半導体基板の他面側に形成する第3工程と、
を含み、
前記第2工程における前記受光面側電極の形成では、
前記半導体基板の一面側にオフセット印刷またはディスペンサーにより金属ペーストを塗布、焼成することにより前記半導体基板の一面側に直接接合した金属ペースト電極層である第1金属電極層を形成する工程と、
前記第1金属電極層の表面上を覆って、めっきにより、前記第1金属電極層と異なるとともに前記第1金属電極層と略同等の電気抵抗率を有する金属材料からなるめっき電極層である第2金属電極層をめっきにより形成する工程と、
を含むことを特徴とする太陽電池セルの製造方法。 - 前記第1金属電極層が、銀ペースト電極層であり、
前記第2金属電極層が、銅めっき電極層であること、
を特徴とする請求項7に記載の太陽電池セルの製造方法。 - 前記第2金属電極層の体積が、前記第1金属電極層の3倍以上であること、
を特徴とする請求項8に記載の太陽電池セルの製造方法。 - 前記第2工程は、
前記第1金属電極層および前記第2金属電極層と異なるとともに前記第1金属電極層と前記第2金属電極層との間の付着強度強化を高める金属材料からなるめっき電極層である第3金属電極層をめっきにより前記第1金属電極層と前記第2金属電極層との間に形成する工程と、
前記第2金属電極層と異なるとともに前記第2金属電極層を保護する金属材料からなるめっき電極層である第4金属電極層をめっきにより前記第2金属電極層上に形成する工程と、
を有することを特徴とする請求項7〜9のいずれか1つに記載の太陽電池セルの製造方法。 - 前記第3金属電極層が、ニッケルめっき層であり、
前記第4金属電極層が、錫めっき層であること、
を特徴とする請求項10に記載の太陽電池セルの製造方法。 - 前記受光面側電極がグリッド電極と前記グリッド電極に導通して前記グリッド電極よりも幅広のバス電極とからなり、
前記第1金属電極層、前記第2金属電極層、前記第3金属電極層および前記第4金属電極層の形成後の前記グリッド電極の断面積が300μm2以上であり、前記グリッド電極の電極幅が60μm以下であること、
を特徴とする請求項11に記載の太陽電池セルの製造方法。 - 前記第1金属電極層、前記第2金属電極層、前記第3金属電極層および前記第4金属電極層の形成後の前記バス電極の電極幅が1.5mm以下であり、
前記バス電極の本数が3本以上であること、
を特徴とする請求項12に記載の太陽電池セルの製造方法。 - 前記第1工程と前記第2工程との間に、前記不純物拡散層上の全面に絶縁膜からなる反射防止膜を形成する工程を有し、
前記第2工程では、前記反射防止膜上に前記金属ペーストを塗布、焼成することにより前記第1金属電極層がファイヤースルー法により形成されること、
を特徴とする請求項7〜13のいずれか1つに記載の太陽電池セルの製造方法。 - 請求項1〜6のいずれか1つに記載の太陽電池セルの少なくとも2つ以上が電気的に直列または並列に接続されてなること、
を特徴とする太陽電池モジュール。
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