JPWO2014178094A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JPWO2014178094A1 JPWO2014178094A1 JP2014541459A JP2014541459A JPWO2014178094A1 JP WO2014178094 A1 JPWO2014178094 A1 JP WO2014178094A1 JP 2014541459 A JP2014541459 A JP 2014541459A JP 2014541459 A JP2014541459 A JP 2014541459A JP WO2014178094 A1 JPWO2014178094 A1 JP WO2014178094A1
- Authority
- JP
- Japan
- Prior art keywords
- trench
- substrate
- angle
- semiconductor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 194
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 155
- 230000001154 acute effect Effects 0.000 claims abstract description 11
- 210000000746 body region Anatomy 0.000 claims description 71
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 48
- 238000000137 annealing Methods 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 123
- 230000004048 modification Effects 0.000 description 30
- 238000012986 modification Methods 0.000 description 30
- 238000011144 upstream manufacturing Methods 0.000 description 30
- 239000007789 gas Substances 0.000 description 19
- 239000000969 carrier Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本発明者らは、トレンチゲート構造を有する縦型MISFET(以下、トレンチ型MISFETと略称する。)である典型的な半導体装置について検討を行った。
一実施形態に係る半導体装置は、オフ角を有する基板と、基板の主面上に配置され、第1導電型の第1の半導体領域を含み、底部が第1の半導体領域に位置するトレンチを有する半導体層と、半導体層におけるトレンチの内部に配置されたゲート電極とを備え、半導体層におけるトレンチは、基板の主面に対する法線方向と基板のc軸方向とに対して平行な断面において、オフ方向側の第1の側壁のうち少なくとも一部が基板の主面に対してなす第1の角が鈍角であり、第1の側壁に対向する第2の側壁のうち少なくとも一部が基板の主面に対してなす第2の角が鋭角である。
「オフ角」とは、基板の主面に対する法線と基板のc軸方向とがなす角を意味する。また、基板の主面と結晶面(c軸に垂直な面)とがなす角をオフ角と呼ぶ場合もある。例えば、c軸方向が<0001>方向である場合、基板の主面と{0001}面とがなす角もオフ角と呼ぶ。
−半導体装置の構造−
以下、本実施形態に係る半導体装置について図1(a)及び図1(b)を参照しながら説明する。
ができる。
以下に、本実施形態に係る半導体装置の製造方法について図2(a)、図2(b)、図3(a)、図3(b)、図4(a)及び図4(b)を参照しながら説明する。
以下、本実施形態に係る半導体装置の製造方法の一変形例として、図5(a)及び図5(b)を参照しながら説明する。
以下、本実施形態の第1変形例に係る半導体装置について図7(a)及び図7(b)を参照しながら説明する。
以下、一実施形態の第2変形例に係る半導体装置について図8(a)及び図8(b)を参照しながら説明する。
2 SiC層
2d ドリフト領域
3 ボディ領域
4 ソース領域
5 トレンチ
5B 下部コーナ部
5L、5L0 オフ角上流側のトレンチ側壁(第2の側壁)
5R、5R0 オフ角下流側のトレンチ側壁(第1の側壁)
5T 上部コーナ部
8 ゲート絶縁膜
9 ゲート電極
10 ソース電極
11 ドレイン電極
12 チャネル層
52 主面
61 マスク層
62 土台
63 対向電極(アノード)
64 平面電極(カソード)
100、200、300 半導体装置
100A 試料
Claims (18)
- オフ角を有する基板と、
前記基板の主面上に配置され、第1導電型の第1の半導体領域を含み、底部が前記第1の半導体領域に位置するトレンチを有する半導体層と、
前記半導体層における前記トレンチの内部に配置されたゲート電極とを備え、
前記半導体層における前記トレンチは、前記基板の主面に対する法線方向と前記基板のc軸方向とに対して平行な断面において、オフ方向側の第1の側壁のうち少なくとも一部が前記基板の主面に対してなす第1の角が鈍角であり、前記第1の側壁に対向する第2の側壁のうち少なくとも一部が前記基板の主面に対してなす第2の角が鋭角である半導体装置。 - 前記第1の側壁の前記少なくとも一部及び前記第2の側壁の前記少なくとも一部は共に、{11−20}面又は{1−100}面に対する方位のずれが前記オフ角よりも小さい請求項1に記載の半導体装置。
- 前記半導体層における前記トレンチの上部コーナ部の上面は、前記トレンチの内側に向かって下方に傾斜している請求項1又は2に記載の半導体装置。
- 前記半導体層における前記トレンチの側壁と前記ゲート電極との間に配置されたゲート絶縁膜をさらに備え、
前記半導体層は、前記第1の半導体領域であるドリフト領域と、前記ドリフト領域の上に配置された第2導電型のボディ領域と、前記ボディ領域の上部に配置された第1導電型の第2の半導体領域とを有し、
前記トレンチは、前記第2の半導体領域及び前記ボディ領域を貫通して前記ドリフト領域に達しており、
前記第1の側壁の前記少なくとも一部及び前記第2の側壁の前記少なくとも一部には、前記ボディ領域が配置されている請求項1から3のいずれか1項に記載の半導体装置。 - 前記基板における前記半導体層と反対側の面上に配置されたドレイン電極と、
前記第2の半導体領域上及び前記ボディ領域上に配置されたソース電極とをさらに備え、
前記第2の半導体領域は、ソース領域であり、
前記基板は、第1導電型を有している請求項4に記載の半導体装置。 - 前記半導体層における前記トレンチの前記第1の側壁の前記少なくとも一部及び前記第2の側壁の前記少なくとも一部は共に、{11−20}面又は{1−100}面に対する方位のずれが4°以下である請求項1に記載の半導体装置。
- 前記半導体層は、少なくとも前記ボディ領域と前記ゲート絶縁膜との間に配置された第1導電型の半導体からなるチャネル層を含む請求項4から6のいずれか1項に記載の半導体装置。
- 前記チャネル層は、前記第1の側壁上の厚さと前記第2の側壁上の厚さとが互いに異なる請求項7に記載の半導体装置。
- オフ角を有する基板の主面上に、第1導電型の第1の半導体領域を含む半導体層を形成する工程と、
前記半導体層に、底部が前記第1の半導体領域に達するトレンチを形成する工程と、
前記トレンチを形成した後に、前記半導体層に対してアニール処理を行う工程とを備え、
前記アニール処理を行う工程において、
前記半導体層における前記トレンチの上部コーナ部の上面を、前記トレンチの内側に向かって下方に傾斜させ、且つ、
前記トレンチの側壁のうち、前記基板の主面に対する法線方向と前記基板のc軸方向とに対して平行な断面におけるオフ方向側の第1の側壁を、所定の面方位に近づくように矯正することにより、前記断面において、前記第1の側壁のうち少なくとも一部が前記基板の主面に対してなす第1の角が鈍角となり、前記第1の側壁に対向する第2の側壁のうち少なくとも一部が前記基板の主面に対してなす第2の角が鋭角となる半導体装置の製造方法。 - 前記アニール処理を行う工程よりも後に、
前記トレンチの側壁を覆うようにゲート絶縁膜を形成する工程と、
前記トレンチの内部の前記ゲート絶縁膜の上にゲート電極を形成する工程とをさらに備え、
前記半導体層は、前記第1の半導体領域であるドリフト領域と、前記ドリフト領域の上に形成された第2導電型のボディ領域と、前記ボディ領域の上部に形成された第1導電型の第2の半導体領域とを有しており、
前記トレンチは、前記第2の半導体領域及び前記ボディ領域を貫通して前記ドリフト領域に達しており、
前記第1の側壁の前記少なくとも一部及び前記第2の側壁の前記少なくとも一部には、前記ボディ領域が形成される請求項9に記載の半導体装置の製造方法。 - 前記基板における前記半導体層と反対側の面上にドレイン電極を形成する工程と、
前記第2の半導体領域及び前記ボディ領域の上に跨がるようにソース電極を形成する工程とをさらに備え、
前記第2の半導体領域は、ソース領域であり、
前記基板は、第1導電型を有している請求項10に記載の半導体装置の製造方法。 - 前記トレンチを形成する工程において、
前記トレンチはドライエッチングによって形成され、当該ドライエッチングの際の電圧印加方向と前記基板のc軸方向とがなす角が、前記オフ角よりも小さくなるように設定される請求項9に記載の半導体装置の製造方法。 - 前記アニール処理は、不活性ガス雰囲気で行う請求項9に記載の半導体装置の製造方法。
- 前記アニール処理は、1500℃以上且つ1600℃以下で行う請求項9に記載の半導体装置の製造方法。
- 前記ゲート絶縁膜を形成する工程よりも前であって、前記アニール処理を行う工程よりも後に、前記トレンチの側壁上に、第1導電型の半導体からなるチャネル層を形成する工程をさらに備えている請求項10に記載の半導体装置の製造方法。
- 前記チャネル層を形成する工程において、
前記チャネル層は、前記トレンチの側壁部分における前記ゲート絶縁膜と前記チャネル層との界面のうち、前記オフ方向で対向する面は、{11−20}面又は{1−100}に対する方位のずれが4°以下となるように形成される請求項15に記載の半導体装置の製造方法。 - 前記c軸方向は、<0001>方向であり、
前記オフ方向は、<11−20>方向又は<1−100>方向である請求項9から16のいずれか1項に記載の半導体装置の製造方法。 - 前記基板及び前記半導体層は、炭化珪素により構成されている請求項9から17のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014541459A JP5649152B1 (ja) | 2013-04-30 | 2013-12-06 | 半導体装置及びその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013095663 | 2013-04-30 | ||
JP2013095663 | 2013-04-30 | ||
PCT/JP2013/007196 WO2014178094A1 (ja) | 2013-04-30 | 2013-12-06 | 半導体装置及びその製造方法 |
JP2014541459A JP5649152B1 (ja) | 2013-04-30 | 2013-12-06 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5649152B1 JP5649152B1 (ja) | 2015-01-07 |
JPWO2014178094A1 true JPWO2014178094A1 (ja) | 2017-02-23 |
Family
ID=51843250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014541459A Expired - Fee Related JP5649152B1 (ja) | 2013-04-30 | 2013-12-06 | 半導体装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9130036B2 (ja) |
JP (1) | JP5649152B1 (ja) |
WO (1) | WO2014178094A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9768175B2 (en) * | 2015-06-21 | 2017-09-19 | Micron Technology, Inc. | Semiconductor devices comprising gate structure sidewalls having different angles |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015103070B4 (de) | 2015-03-03 | 2021-09-23 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit trenchgatestrukturen mit zu einer hauptkristallrichtung geneigten längsachsen und herstellungsverfahren |
DE102015117286B4 (de) * | 2015-10-09 | 2018-04-05 | Infineon Technologies Ag | Verfahren zum herstellen einer siliziumcarbidhalbleitervorrichtung durch entfernen amorphisierter abschnitte |
DE102016111998B4 (de) * | 2016-06-30 | 2024-01-18 | Infineon Technologies Ag | Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen |
JP6164672B1 (ja) * | 2016-07-19 | 2017-07-19 | 国立研究開発法人産業技術総合研究所 | 半導体装置およびその製造方法 |
JP6848317B2 (ja) | 2016-10-05 | 2021-03-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7135302B2 (ja) * | 2017-11-08 | 2022-09-13 | 富士電機株式会社 | 炭化シリコン半導体装置及びその製造方法 |
US20200027832A1 (en) * | 2018-07-17 | 2020-01-23 | Varian Semiconductor Equipment Associates, Inc. | Device structure and techniques for forming semiconductor device having angled conductors |
JP7280154B2 (ja) * | 2019-09-18 | 2023-05-23 | 株式会社日立製作所 | 半導体装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1531491A2 (en) * | 1996-04-18 | 2005-05-18 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
SE527205C2 (sv) * | 2004-04-14 | 2006-01-17 | Denso Corp | Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid |
JP4775102B2 (ja) * | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
WO2007032214A1 (ja) * | 2005-09-14 | 2007-03-22 | The Kansai Electric Power Co., Inc. | 炭化珪素半導体素子の製造方法 |
JP5017865B2 (ja) * | 2006-01-17 | 2012-09-05 | 富士電機株式会社 | 半導体装置 |
JP5509520B2 (ja) * | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2010182857A (ja) | 2009-02-05 | 2010-08-19 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP5721351B2 (ja) | 2009-07-21 | 2015-05-20 | ローム株式会社 | 半導体装置 |
JP5761533B2 (ja) * | 2010-08-27 | 2015-08-12 | 国立大学法人 奈良先端科学技術大学院大学 | SiC半導体素子 |
JP5510309B2 (ja) | 2010-12-22 | 2014-06-04 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2012146921A (ja) | 2011-01-14 | 2012-08-02 | Denso Corp | 炭化珪素半導体装置 |
US8563987B2 (en) | 2011-06-28 | 2013-10-22 | Panasonic Corporation | Semiconductor device and method for fabricating the device |
JP5699878B2 (ja) | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5209152B1 (ja) | 2011-09-22 | 2013-06-12 | パナソニック株式会社 | 炭化珪素半導体素子およびその製造方法 |
JP2013219293A (ja) * | 2012-04-12 | 2013-10-24 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP2014007310A (ja) * | 2012-06-26 | 2014-01-16 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
-
2013
- 2013-12-06 US US14/408,954 patent/US9130036B2/en not_active Expired - Fee Related
- 2013-12-06 WO PCT/JP2013/007196 patent/WO2014178094A1/ja active Application Filing
- 2013-12-06 JP JP2014541459A patent/JP5649152B1/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9768175B2 (en) * | 2015-06-21 | 2017-09-19 | Micron Technology, Inc. | Semiconductor devices comprising gate structure sidewalls having different angles |
Also Published As
Publication number | Publication date |
---|---|
WO2014178094A1 (ja) | 2014-11-06 |
US20150137221A1 (en) | 2015-05-21 |
US9130036B2 (en) | 2015-09-08 |
JP5649152B1 (ja) | 2015-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5649152B1 (ja) | 半導体装置及びその製造方法 | |
JP5685736B2 (ja) | 半導体装置及びその製造方法 | |
JP6706767B2 (ja) | 半導体装置 | |
JP5209152B1 (ja) | 炭化珪素半導体素子およびその製造方法 | |
JP5834179B2 (ja) | 炭化珪素半導体装置の製造方法 | |
US9722017B2 (en) | Silicon carbide semiconductor device | |
WO2012169224A1 (ja) | 半導体装置 | |
US20130065384A1 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP2015060859A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6075120B2 (ja) | 炭化珪素半導体装置 | |
JP2018060923A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2012038771A (ja) | 半導体装置およびその製造方法 | |
JP5870672B2 (ja) | 半導体装置 | |
JP2012109348A (ja) | 炭化珪素半導体装置 | |
WO2013094328A1 (ja) | 半導体装置およびその製造方法 | |
JP7290160B2 (ja) | 半導体装置 | |
JP7074173B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US11139377B2 (en) | Method of manufacturing silicon carbide semiconductor device | |
JP2009200335A (ja) | 基板、エピタキシャル層付基板および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20140926 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140930 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141017 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141106 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5649152 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |