JPWO2013175690A1 - 高周波増幅回路 - Google Patents
高周波増幅回路 Download PDFInfo
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- H—ELECTRICITY
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- H03F—AMPLIFIERS
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- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
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- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
Description
図1は、実施の形態1に係る高周波増幅回路の回路構成図である。本実施の形態に係る高周波増幅回路1は、トランジスタ101と、入力側整合回路102と、出力側整合回路103とで構成されている。
図6は、実施の形態2に係る高周波増幅回路のレイアウト図である。本実施の形態に係る高周波増幅回路は、トランジスタ101と、入力側整合回路102と、出力側整合回路143とで構成されている。本実施の形態に係る高周波増幅回路は、実施の形態1に係る高周波増幅回路1と比較して、出力側整合回路における分布定数線路の構成のみが異なる。以下、実施の形態1に係る高周波増幅回路1と異なる点を中心に説明する。
本実施の形態では、誘導性を有する分布定数線路とリード端子に並列接続された容量素子とを1つの単位伝送線路として、これを複数並列に備えた整合回路を有する高周波増幅回路について説明する。
101、101A、101B、801、901 トランジスタ
102、802、902 入力側整合回路
103、143、153、803、903A、903B 出力側整合回路
104 第2の分布定数線路
105、111、111A、111B 第1の分布定数線路
106、804 リード端子
107 ベース基板
108 容量素子
109 第3の分布定数線路
110 封止樹脂
112、212、312 パッケージ
113 測定治具
114、806 抵抗
121、125、125A、125B 第1ワイヤ
122、122A、122B 第2ワイヤ
123 第3ワイヤ
124 第4ワイヤ
131、132、133 誘電体基板
805 パッケージ枠体
807 容量
904、905A、905B、906 分布定数線路
910 高誘電率基板
Claims (6)
- 高周波信号を増幅するトランジスタと入力側整合回路と出力側整合回路とをパッケージ内の実装面上に備え、
前記出力側整合回路は、
並列に配置された複数の第1ワイヤを介して前記トランジスタからの高周波信号が伝達される第1の分布定数線路と、
並列に配置された複数の第2ワイヤを介して前記第1の分布定数線路からの高周波信号が伝達され、当該高周波信号を前記パッケージ外部へ伝送する平板状のリード端子と、
一方の電極が、第3ワイヤを介して前記リード端子に接続され、他方の電極が接地された容量素子とを備え、
前記リード端子の一部は、前記第1の分布定数回路の誘電率より低い誘電率を有する封止樹脂と接合されており、
前記容量素子および前記第1の分布定数線路との並び方向が、前記第1の分布定数線路および前記リード端子の並び方向と前記実装面において交差するように、前記容量素子および前記第1の分布定数線路が隣接して配置されている
高周波増幅回路。 - さらに、前記第1の分布定数線路と前記トランジスタとの間には、並列に配置された複数の第4ワイヤを介して前記トランジスタと接続され、かつ、前記複数の第1ワイヤを介して前記第1の分布定数線路と接続された第2の分布定数線路が配置されている
請求項1に記載の高周波増幅回路。 - 前記第1の分布定数線路と前記容量素子とは、連続した同一の誘電体基板で構成されている
請求項1または2に記載の高周波増幅回路。 - 前記第1の分布定数線路の前記交差する方向の両側に、対称に前記容量素子が配置されている
請求項1に記載の高周波増幅回路。 - 前記トランジスタは、複数個配置されており、
前記トランジスタごとに設けられた、前記第1の分布定数線路と前記容量素子とで構成された単位伝送線路は、複数の前記トランジスタと前記リード端子との間に、複数個並列に配置されている
請求項1に記載の高周波増幅回路。 - 隣接する前記単位伝送線路同士は、抵抗を介して接続されている
請求項5に記載の高周波増幅回路。
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JP2013549664A JP6074695B2 (ja) | 2012-05-25 | 2013-03-15 | 高周波増幅回路 |
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JP2012120094 | 2012-05-25 | ||
JP2013549664A JP6074695B2 (ja) | 2012-05-25 | 2013-03-15 | 高周波増幅回路 |
PCT/JP2013/001754 WO2013175690A1 (ja) | 2012-05-25 | 2013-03-15 | 高周波増幅回路 |
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JPWO2013175690A1 true JPWO2013175690A1 (ja) | 2016-01-12 |
JP6074695B2 JP6074695B2 (ja) | 2017-02-08 |
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US (1) | US9203358B2 (ja) |
JP (1) | JP6074695B2 (ja) |
CN (1) | CN103703682B (ja) |
WO (1) | WO2013175690A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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GB201323159D0 (en) * | 2013-12-31 | 2014-02-12 | Diamond Microwave Devices Ltd | Improved matching techniques for wide-bandgap power transistors |
JP6273247B2 (ja) * | 2015-12-03 | 2018-01-31 | 株式会社東芝 | 高周波半導体増幅器 |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
DE102016111072A1 (de) * | 2016-06-16 | 2017-12-21 | Infineon Technologies Ag | Hochfrequenzeinrichtung |
US10134658B2 (en) * | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
JP6849060B2 (ja) * | 2017-05-17 | 2021-03-24 | 三菱電機株式会社 | 増幅器 |
DE112017007890B4 (de) | 2017-09-28 | 2023-05-11 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Hochfrequenz-Leistungsverstärker und Verfahren zum Herstellen einer Halbleitervorrichtung |
US20220392857A1 (en) * | 2021-06-07 | 2022-12-08 | Cree Inc. | Packaged transistor amplifiers that include integrated passive device matching structures having distributed shunt inductances |
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JP2006122095A (ja) | 2004-10-26 | 2006-05-18 | Chest M I Inc | 浴用カバーおよびこれを用いた介護用入浴装置 |
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WO2007119266A1 (ja) | 2006-03-22 | 2007-10-25 | Fujitsu Limited | 高周波高出力増幅器 |
JP4925096B2 (ja) | 2006-04-26 | 2012-04-25 | 三菱電機株式会社 | 高周波増幅器 |
US8299857B2 (en) * | 2011-01-27 | 2012-10-30 | Integra Technologies, Inc. | RF power amplifier including broadband input matching network |
-
2013
- 2013-03-15 WO PCT/JP2013/001754 patent/WO2013175690A1/ja active Application Filing
- 2013-03-15 CN CN201380002337.XA patent/CN103703682B/zh active Active
- 2013-03-15 JP JP2013549664A patent/JP6074695B2/ja active Active
- 2013-03-15 US US14/233,242 patent/US9203358B2/en active Active
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JPS61237455A (ja) * | 1985-04-15 | 1986-10-22 | Sony Corp | モ−ルド電気部品 |
JPH0319403A (ja) * | 1989-06-15 | 1991-01-28 | Matsushita Electron Corp | マイクロ波集積回路素子 |
JPH08172306A (ja) * | 1994-12-19 | 1996-07-02 | Hitachi Ltd | 高周波装置及びこれを使用した移動無線器 |
JP2001111364A (ja) * | 1999-10-12 | 2001-04-20 | Nec Corp | マイクロ波増幅器 |
JP2001230640A (ja) * | 2000-02-16 | 2001-08-24 | Mitsubishi Electric Corp | 半導体装置 |
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US9203358B2 (en) | 2015-12-01 |
CN103703682A (zh) | 2014-04-02 |
CN103703682B (zh) | 2017-02-22 |
WO2013175690A1 (ja) | 2013-11-28 |
JP6074695B2 (ja) | 2017-02-08 |
US20140191809A1 (en) | 2014-07-10 |
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