JPWO2013161891A1 - チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体 - Google Patents
チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体 Download PDFInfo
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- JPWO2013161891A1 JPWO2013161891A1 JP2014512656A JP2014512656A JPWO2013161891A1 JP WO2013161891 A1 JPWO2013161891 A1 JP WO2013161891A1 JP 2014512656 A JP2014512656 A JP 2014512656A JP 2014512656 A JP2014512656 A JP 2014512656A JP WO2013161891 A1 JPWO2013161891 A1 JP WO2013161891A1
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Abstract
Description
<1.1 第1の実施形態>
図1は、本願発明の第1の実施形態に係るチップの基板への接合方法を示すフローチャートである。
チップ側接合面又は基板の接合部(以下、接合面と称する。)41上には、様々な物質の酸化物、付着した有機物などの汚染物(不純物)などを含む表面層42が存在し、接合すべき材料の新生表面43を覆っている(図2(a)参照)。上記表面層42は、材料の新生表面43のエネルギーレベルを低くしていると考えられる。表面活性化処理により、この表面層が除去され、接合すべき材料の新生表面が露出させられると考えられる(図2(b)参照)。さらには、所定の運動エネルギーを有する粒子を衝突させて行う表面活性化処理には、新生表面近傍において原子間の結合を切断し結晶構造を乱すことで、表面エネルギーのレベルを一層高める効果もあると考えられている。
図3(a)から(f)は、チップ側接合面に垂直な平面でチップを切断した場合の、チップの断面の模式図である。これらの図は、金属領域の形状を例示的に示すことを意図するもので、金属領域の形状を限定するものではない。
基板WAの接合部UTは、例えば、図5に示されているように、基板の面上に縦方向及び横方向に引かれた等間隔の直線で画定される複数の長方形又は正方形として設定されてもよく、また離散的に任意の箇所に設定されてもよい。典型的に、上記基板は、本願発明に係る接合方法の工程が完了した後に、接合部毎に切断(ダイシング)され、ダイ(die)に分割される。最終製品として与えられたダイの大きさは、基板上に設定された接合部の大きさにより定められる。
工程S1及び工程S2において、チップ側接合面及び基板の接合部(以下、接合面と称する)に、所定の運動エネルギーを有する粒子を衝突させることで表面活性化処理を行う。
工程S1及び工程S2において、親水化処理は、上記表面活性化処理の後に行われる。接合面の親水化処理により、接合面に水酸基(OH基)が結合されると考えられている。さらには、水酸基(OH基)が結合された接合面上に水分子が付着してもよい。
工程S3で、チップ側接合面が表面活性化処理され親水化処理されたチップが、それぞれ、チップの金属領域が基板の接合部に接触するように、表面活性化処理され親水化処理された基板の対応する接合部上に取り付けられる。
工程S4では、工程S3で得られた複数のチップと基板との構造体に加熱処理を行うことにより、チップと基板との間の所定の導電性(抵抗率)又は接合強度(機械的強度)を得ることができる。
親水化処理の後の接合、すなわち仮接合では、接合面の大部分がOH基、酸化膜又はこれらの上に付着している水分子(水酸基の層等)を介して他の接合面と接合される。接合面表面にあった表面粗さ又は凹凸は、仮接合時の接触により完全にはなくならないので、仮接合後の接合界面はこの凹凸のある接合面間で形成されている。この仮接合時の接合界面に対して、本接合時に還元処理を行い、酸化膜の除去により新生表面の形成を促進させることは有用である。すなわち、本接合の際の加熱に還元処理を伴うことで酸化膜除去の速度を向上させることができる。さらに、接合界面に対して加圧することで、酸化膜の除去により新生表面の形成と、接合面近傍での原子拡散と同時に、接合面にあった凹凸を低くし実質的な接合面積を効率よく大きくさせることができる。
還元処理には、図34に示すような接合装置401を用いてもよい。
接合装置401は、被接合物491及び492が置かれる雰囲気を制御するための真空チャンバ402と、被接合物491及び492の接合面に対して表面活性化処理を行う表面活性化処理手段408と、被接合物491及び492間の位置ずれを測定する位置ずれ測定手段428M,428e,428fと、被接合物491及び492間の位置ずれを補正するために被接合物491及び492を接合面の面内方向に相対的に移動させるアライメント手段423と、被接合物491及び492を接合面にほぼ垂直方向に遠ざけ、近づけ又は接触させ、或いは接触させた上で加圧するための相対移動手段426と、真空引き手段405,406,407と、還元処理手段441,442,445とを有して構成される。これらの構成により、接合装置1を用いて、チャンバ(真空チャンバ)402内を減圧し、被接合物491及び492の表面処理、接合、加圧、加熱及び還元処理を行うことができる。
ヘッド422は、当該ヘッド422に内蔵されたヒータ422hによって加熱され、ヘッド422に保持された被接合物492の温度を調整することができる。同様に、ステージ412は、当該ステージ412に内蔵されたヒータ412hによって加熱され、ステージ412上の被接合物491の温度を調整することができる。また、ヘッド422は、当該ヘッド422に内蔵された空冷式の冷却装置等によって当該ヘッド422自身を室温付近にまで急速に冷却することもできる。ステージ412も同様である。ヒータ412h,422h(特に422h)は、金属バンプMRを加熱または冷却する加熱冷却手段として機能する。
また、ヘッド422は、Z軸昇降駆動機構426によって、Z方向に移動(昇降)される。ステージ412とヘッド422とがZ方向に相対的に移動することによって、ステージ412に保持された被接合物491とヘッド422に保持された被接合物492とが接触している際に、加圧するように構成されてもよいされて接合される。なお、Z軸昇降駆動機構426は、複数の圧力検出センサ(ロードセル等)429,432により検出された信号に基づいて、接合時の加圧力を制御することも可能である。
還元性ガス源441は、水素ラジカル源又はギ酸ガス源である。還元性ガスは、還元性ガス源441から、弁442、導入間443を通り、所定の流量でチャンバ402内へ導入される。
本願発明に係る仮接合と本接合とを有する接合方法を採用することで、COW実装の生産効率が従来の接合方法と比較して著しく向上する。例えば、チップ毎に対応する基板上の接合部に仮接合及び本接合をすることを繰り返し行い、所定の数のチップを基板上に実装する場合と比較することにより、本願発明の効果をよりよく理解することができる。
従来のようにチップ毎に仮接合と本接合とを繰り返す場合には、チップあたり60秒ほど掛かるといわれている。したがって、例えば、1つの基板上に5000個のチップを本接合するためには、(60秒/チップ)×(5000チップ)=300000秒=約83時間掛かる。チップ毎の仮接合及び本接合を10秒で行うとしても、1つの基板上に5000個のチップを本接合するためには、(10秒/チップ)×(5000チップ)=50000秒=約14時間掛かる。
上記の親水化処理(工程S1)が完了したチップを基板の対応する接合部に取り付ける(工程S3)前に、チップ側接合面に水(H2O)を付着させてもよい(工程S5)。図6は、この工程(工程S5)を含む、本願発明の第1の実施形態の変形例に係る接合方法のフローチャートを示している。
(図8を参照)
図10は、本願発明の第2の実施形態に係る、複数の層のチップを基板へ接合する方法を示すフローチャートである。基板に1層目のチップを取り付ける工程S11から工程S13の処理は、第1の実施形態の工程S1から工程S3と同様であるので、ここではその説明を省略する。
<2.1 システム構成>
図14は、チップ実装システム(電子部品実装システム)1の概略構成を示す上面図である。なお、図14等においては、便宜上、XYZ直交座標系を用いて方向等を示している。
搬送部70は、接合すべき複数のチップを、搬出入部90から表面処理装置50へ搬送し、表面活性化処理と親水化処理が行われた後に表面処理装置50からチップ供給装置10へ搬送する。また、搬送部70は、基板を、搬出入部90から表面処理装置50へ搬送し、表面活性化処理と親水化処理が行われた後に表面処理装置50からボンディング装置30へ搬送する。さらに、搬送部70は、所定数のチップが基板上に取り付けられた後に、チップと基板とを含む構造体をボンディング装置30から搬出入部90へ搬送する。
図14に示す表面処理装置50は、真空チャンバ内に基板WA又は複数のチップを保持するステージ53と、表面活性化処理のために粒子を放射する粒子ビーム源51と、親水化処理のために水を放出する水導入口54とを備え、複数のチップと基板WAとの両方に対して表面活性化処理と親水化処理とを行うことができる構成となっている。以下、便宜的に、図14に示す装置の実施例を用いて本願発明を説明するが、これに限定されない。
所定の運動エネルギーが付与された粒子(破線で図示)は、図15に示されるように、粒子ビーム源51から複数の接合部が設定された接合面を有する基板WA全体に向けて放射状に放出されてもよい。比較的小型の粒子ビーム源などを使うことができ、装置を比較的単純に構成することで小型化できる。
中性原子ビーム源、イオンビーム源、高速原子ビーム源などの粒子ビーム源は、図16に示されるように、ライン型でもよい。ライン型の粒子ビーム源は、ライン型(線状)の又は細長い粒子ビーム放射口を有し、この放射口からライン型(線状)に粒子ビームを放射することができる。放射口の長さは、粒子ビームが照射される基板の直径より大きいことが好ましい。基板が円形でない場合には、放射口の長さは、粒子ビーム源に対して相対的に移動させられる基板に係る放射口が延びる方向の最大寸法より大きいことが好ましい。
プラズマ発生装置を用いても、粒子に所定の運動エネルギーを与えることができる。粒子への所定の運動エネルギーの付与は、プラズマ発生装置を用いて、複数のチップ又は基板などの接合面に対して、交番電圧を印加することで、接合面の周りに粒子を含むプラズマを発生させ、プラズマ中の電離した粒子の陽イオンを、上記電圧により接合面に向けて加速させることで行うことができる。プラズマは数パスカル(Pa)程度の低真空度の雰囲気で発生させることができるので、真空システムを簡易化でき、かつ真空引きなどの工程を短縮化することができる。
図14に示される実施形態においては、水ガス供給部55と、弁56と、ガス供給管と、水導入口54とから、接合面を親水化処理する親水化処理手段が構成される。水ガス供給部55から供給される気体状又は液体状の水は、弁56の開放に応じて、ガス供給管を通って水導入口54から表面処理装置50のチャンバ内に導入される。弁56は、マスフローとして機能し、その開放度に応じて水の供給量を調節するようにしてもよい。
チップ供給装置10は、ダイシングされた基板から各チップCPを取り出し、ボンディング装置30に各チップCP(CPi)を供給する装置である。チップ供給装置10は、複数のチップから一つのチップのみを上方に持ち上げて支持する突上部11と、突上部11により持ち上げられたチップをボンディング装置30に搬送するチップ移載装置13等を備える。チップ移載装置13は、ダイピッカ131とチップ供給機135とを有する。
(図17参照)
図18において、チップ搬送手段であるチップ搬送部(ターレットとも称する)39は、チップ供給装置10から供給されたチップを一つずつボンディング部33(詳細にはヘッド部33H)に受け渡す装置である。
ボンディング装置30は、基板を支持するステージ31、チップを保持して基板に取り付けるボンディング部33、撮像部(カメラ)35、位置認識部(不図示)等を備える。
従来のボンディング装置においては、ボンディング部33に対応する部位が、装置内で水平方向に支持された片持ち梁構造のビームに沿って、水平方向、又は基板表面に平行面内方向(XY方向)に移動できるように構成されている。しかし、片持ち梁構造は剛性が低く、チップの取り付けの際に力を加えると、片持ち梁がZ方向にたわむ。このため、チップと基板との接触の際に印加することのできる力は極めて制限され、通常、最大で2〜3kgf(重量キログラム)すなわち20〜30N程度の力しか印加することができない。従来のNCPやハンダバンプ接合方法では、チップを樹脂やフラックスで一旦、仮接合するのみなので20〜30Nの加圧力で十分あった。また、その場でハンダ接合させるにしても加熱して溶融させるので大きな加圧力は不要であり、装置の簡易化と高速化のためにヘッド(又はボンディング部)を移動させて、場合によっては複数ヘッドを有する構成を採用して高速化を図っていた。しかし、本願発明の接合方法のように金属領域の融点未満で接合を行う場合には、界面の接触した部分しか接合できないため、比較的高い圧力が必要になる。例えば、金属領域(バンプ)に対して、通常のウエハ表面の研磨に有効なCMP研磨方法を用いても、表面粗さを数nm以下にすることは困難である。そのため、研削方法も用いられる。このようにして準備された、金属領域の表面の一般的な表面粗さは、測定したところ、Ra10nm以上であり200nmにも達するものもあった。そのため、ウエハ同士を接合させようとする場合には、数百トンレベルの力を印加することが必要となり、現実的ではなかった。しかし、COW接合することで、1チップあたりに印加する圧力は同じでも必要な力は小さくて済み、1チップあたりに印加することができる力を増大させることができる。仮接合時の加圧は、接合の量産を可能にする現時的な解となりうる。そこで、金属領域の融点未満であっても良好な接合界面を形成するために、チップと基板との接合界面により高い圧力を掛けることで、金属領域の変形を促し、実質的な接合面積を増加させることができる。また、界面に残った水分子を押し出して、OH基同士の強度の高い接合を確保することができる。
上記の親水化処理の完了後、チップが基板上に取り付けられる前に、またはチップが基板上に既に取り付けられたチップの第二接合面上に取り付けられる前に、接合されるチップのチップ側接合面又は第一接合面に水を付着させるための孔部を有する装置(水付着手段又は水付着装置)を設けてもよい。水付着装置は、チップ搬送部39に設けられてもよく、あるいはチップ供給装置10内やボンディング装置30内に設けられてもよい。
図22に示されるように、水付着手段として、上記孔部を水噴射口65としてなし、当該水噴射口65から水を噴射する構成としてもよい。この水噴射口65は、プレート部391に付設された部分に、真空吸着孔64と同じ向きに開口されるように設けてもよい。この水噴射口65は、真空吸着孔64の軸AXを中心とした回転円上に配置される。チップ搬送部39の回転中心の軸AXを基準として、真空吸着孔64と水噴射口65とは角(φ)をなしている。
図23に示されているように、水噴射口の変形例として、真空吸着孔64を水噴射口として機能させてもよい。真空吸着孔64は、真空ポンプ(図示せず)に接続されるとともに水供給源にも接続されるように構成される。そして、真空吸着孔64は、チップを吸着する時及び吸着している間は、真空ポンプと接続され、水供給源との接続が遮断されて、チップを真空吸着する。水噴射口として機能するときは、真空ポンプとの接続が遮断され、水供給源と接続されて、真空引きの際に気体が流れる方向と逆方向に気体状又は液体状の水が流れるように構成されるのが好ましい。
図24に示されるように、水付着手段のさらなる変形例として、水噴射口65は、チップ供給装置10又はボンディング装置30に対して固定され、チップの取出し位置から接合位置までの移動経路中に設けられてもよい。各プレート部391の先端にボンディング部33のヘッド部33Hを配置し、搬送されるチップが水噴射口65を通過する際に、チップ側接合面に対して水を噴射できるように構成されてもよい。
親水化処理の完了後、チップが基板上に取り付けられる前に、チップ側接合面又は第一接合面の金属領域に水を付着する装置(水付着装置)として、チップ供給装置10又はボンディング装置30内に液体の水を収容する水槽66を設けてもよい。(図26を参照)
第1の実施形態及び第2の実施形態において、仮接合時に、接合されるチップ側接合面と基板の接合部とを比較的低温で加熱しつつ加圧することが好ましい。これにより、平坦度に対して厳しい条件を必要としないため好ましい。
図3(e)又は図3(f)に示すような、金属領域MRと非金属領域NRとがほぼ同一面上にあるようにチップ側接合面は、一般的に、研磨により形成される場合が多い。研磨された金属領域MRは比較的に平坦度が高く、表面粗さは、例えば、1nmRa以下である。
チップ非金属領域NRが樹脂を含む場合には、チップ側接合面の表面活性化処理を、接合面から離間した位置に配置された粒子ビーム源を用いて、所定の運動エネルギーが付与された粒子を接合面に向けて放射することで行うことが好ましい。
デバイスに対する不断の高密度化三次元化要求に合わせて、チップにもバンプの微細化、薄膜化が進行している。本願において、薄型チップとは、厚さが10μm〜300μmのチップを指すものとする。ここにおいて、本願発明者は、電気接続用のバンプ(図3、図4に示した突起状の金属領域MR参照)を搭載した薄型チップにあっては、チップの「反り」が問題になることを見出した。
従来のチップのバンプ(金属領域)の一例として、銅のTSV(MR1)上にSn−Ag系のはんだ材料(MR2)を載せて接合面を形成したバンプ(金属領域)がある。はんだ材料の接合面は、銅上に塗布された後に熱処理による溶融、そして冷却工程を経て形成されるために、液相での表面張力に応じた球面又は凸形状の曲面を有している(図29(a))。従来のバンプの接合方法では、接触に先立ちバンプを融点以上の温度まで加熱するために、接触により溶融したはんだ材料(MR2)同士が混ざり合って、接合界面が形成される。これにより、バンプ同士の位置決め精度を保つこともできる(図29(b))。
バンプ(金属領域)の平坦化は、取付けステップの直前に行ってもよい。例えば、チップがボンディング部33のヘッド部33Hに保持され基板上に配置された段階で、チップと基板との間に平坦化部材として両端が平坦な基板(たとえば、シリコン基板)を挿入し、当該基板に対してチップと基板とを近づけるように押圧させてもよい。当該基板の両面は互いに平行であることが好ましい。これにより、押圧後のチップ側のバンプ(金属領域)の平坦化された面と基板側の(金属領域)の平坦化された面とをほぼ平行となるように形成することができる(図30(c)及び(d))。
本実施例の上記説明及び変形例1においては、チップのバンプ(金属領域)を個別に平坦化したが、これに限られず、複数のチップのバンプ(金属領域)を一括して平坦化してもよい。
チップ側と同様に、チップが接合される基板(ウエハ)側のバンプ(金属領域)についても平坦化を行ってもよい。この場合は、基板(ウエハ)側のバンプ(金属領域)のみについて平坦化を行っても(図30(a)及び(b))、チップと基板との両方についてバンプ(金属領域)の平坦化を行ってもよい(図30(c)及び(d))。
平坦化工程を比較的低温、例えば100℃以下又は常温で、1秒程度の加圧で行う場合には、金属領域を十分に変形させて所望の平坦度が得ることができず、実質的に接触面積又は接合界面が大きくならず、所望の導電性、機械的特性を得ることが出来ない場合がある。従来の金属領域を溶融させる接合方法と異なり、本願発明のように加熱温度が金属領域の融点を超えない場合には、仮接合前に加圧し、この加圧下で加熱し温度を上げ、又は加圧時間を長くして、事前に平坦化処理を行うことで、仮接合時の実質的な接合面を増大させておくことが好ましい。
親水化の程度は、親水化処理の条件の他に、チップの種類、表面活性化処理の条件、仮接合の条件などによって変わり得るものであり、また調節もされ得る。以下の表3において、金属領域が銅(Cu)のバンプで形成され、非金属領域がSiO2(酸化ケイ素)で形成されている場合の、表面活性化処理の条件、親水化処理の条件、仮接合の条件に対する、仮接合の可否に関する比較実験の結果を示す。
平坦化されるバンプ(金属領域)MRの構成として、銅で形成されたTSV(MR1)とその先端部に接合界面を形成するためのはんだ材料部(MR2)を有する構成について説明してきたが、これに限られない。TSV(MR1)の部分は銅以外の金属で形成されていてもよく、バンプ(金属領域)の先端領域(MR2)はSn−Ag系以外のはんだ材料でも他の金属により形成されていてもよい。
10 チップ供給装置
11 突上部
13 チップ移載装置
30 ボンディング装置
31 ボンディング用ステージ
33 ボンディング部
34 フレーム
33H ヘッド部
39 チップ搬送部
41 接合面
42 表面層
43 新生表面
44 水酸基の層
45 接合界面
50 表面処理装置
51 粒子ビーム源
53 表面処理用ステージ
54 水導入口
55 水ガス供給部
56 弁
61 内側支持部
62 外側支持部
63 凹部
64 真空吸着孔
65 水噴射口
66 水槽
70 搬送部
71 搬送ロボット
80 加熱手段
90 搬出入部
131 ダイピッカ
135 チップ供給機
391 プレート部
392 駆動部
AX チップ搬送部の回転軸
CP チップ
WA 基板
MR 金属領域
NR 非金属領域
UT 接合部
Claims (52)
- 一つ又は複数の金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する方法であって、
チップ側接合面の少なくとも金属領域を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
基板の接合部を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
表面活性化処理されかつ親水化処理された複数のチップを、それぞれ、チップの金属領域が基板の接合部に接触するように、表面活性化処理されかつ親水化処理された基板の対応する接合部上に取り付けるステップと、
基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップと、
を備えた方法。 - 前記複数のチップを基板の対応する接合部上に取り付けるステップは、チップの金属領域が基板の接合部に接触する際に、0.1秒から10秒に亘り、チップの金属領域及び基板の接合部を摂氏100度から摂氏350度の温度となるように加熱することで行われる、請求項1に記載の方法。
- 前記チップ側接合面への水の付着及び基板の接合部への水の付着は、それぞれ、チップ側接合面及び基板の接合部の周りの雰囲気における相対湿度が10%から100%となるように制御されることで行われる、請求項1又は2に記載の方法。
- 前記チップ側接合面への水の付着及び基板の接合部への水の付着は、表面活性化処理の後、チップ側接合面及び基板の接合部をそれぞれ大気に暴露することなくチャンバ内で行われる、請求項3に記載の方法。
- 前記チップ側接合面を親水化処理するステップの後、前記複数のチップを基板の対応する接合部上に取り付けるステップの前に、チップ側接合面に水を付着させる水付着ステップを更に備える、請求項1から4のいずれか一項に記載の方法。
- 前記水付着ステップは、チップ側接合面の金属領域に水を吹き付けることで行われる、請求項5に記載の方法。
- 前記水付着ステップは、チップ側接合面の金属領域を液体状の水に浸漬させることで行われる、請求項5に記載の方法。
- 前記粒子は、Ne,Ar,Kr,Xeからなる群から選ばれる元素の中性原子、イオン若しくはラジカル又はこれらを混合したものである、請求項1から7のいずれか一項に記載の方法。
- 前記粒子の運動エネルギーは、1eVから2keVである、請求項1から8のいずれか一項に記載の方法。
- 複数のチップ又は基板に対して交番電圧を印加することで、チップ側接合面又は基板の接合部の周りに前記粒子を含むプラズマを発生させ、プラズマ中の前記粒子を前記電圧によりチップ側接合面又は基板の接合部に向けて加速させることにより、粒子に所定の運動エネルギーを付与する、請求項9に記載の方法。
- 前記チップ側接合面又は基板の接合部から離間された位置から、前記チップ側接合面又は基板の接合部に向けて所定の運動エネルギーを有する粒子を放射する、請求項9に記載の方法。
- 前記チップ側接合面は金属領域以外の領域に非金属領域を有し、当該非金属領域は樹脂により形成される、請求項11に記載の方法。
- 前記複数のチップを基板の対応する接合部上に取り付けるステップは、前記チップと前記基板とを互いに近接する方向に加圧するステップを含み、当該加圧ステップは、金属領域に対して0.3〜600MPaの圧力で行われる、請求項1から12のいずれか一項に記載の方法。
- 前記加圧ステップは、チップあたり100N以上の力、又は金属領域に対して150MPa以上の圧力を印加することで行われる、請求項13に記載の方法。
- 前記基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップは、摂氏100度以上、前記金属領域を形成する金属の融点未満の温度で、10分から100時間に亘って行われる、請求項1から14のいずれか一項に記載の方法。
- 前記基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップは、前記基板と前記基板に接合された複数のチップとを、互いに近接する方向に加圧するステップを含む、請求項1から15のいずれか一項に記載の方法。
- 前記基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップは、還元雰囲気中で行われる還元処理ステップを含む、請求項15又は16に記載の方法。
- 前記還元処理ステップ前に、前記構造体の周りの雰囲気を真空引きし、
前記還元雰囲気は水素を含むガスである、
請求項17に記載の方法。 - 前記還元処理ステップ後に、前記基板と前記基板に接合された複数のチップとを、互いに近接する方向に加圧するステップを行う、請求項17又は18に記載の方法。
- 前記金属領域は、銅(Cu)、はんだ材料、金(Au)及びこれらの合金からなる群から選ばれる材料により形成されている、請求項1から19のいずれか一項に記載の方法。
- チップ側接合面は金属領域以外の領域に非金属領域を有し、金属領域と非金属領域の表面はほぼ同一面上にある、請求項1から20のいずれか一項に記載の方法。
- チップ側接合面の非金属領域は、疎水化処理されたチップ側疎水化領域を有し、
基板の接合部は、チップの金属領域に対応する接合領域と、疎水化処理された基板側疎水化領域とを有し、
前記複数のチップを基板の対応する接合部上に取り付けるステップは、チップの金属領域と基板の親水化処理された接合領域とが接触するように行われる、請求項21に記載の方法。 - 前記金属領域は、チップ側接合面の金属領域以外の領域に対して突出するように形成されている、請求項1から20のいずれか一項に記載の方法。
- 前記金属領域は、一つ又は複数の第一の金属領域と当該第一の金属領域を囲むように形成された閉じた環状の第二の金属領域とを有する、請求項23に記載の方法。
- チップに所定の検査を行い、良好と判断されたチップのみを供給するステップを更に含む、請求項1から24のいずれか一項に記載の方法。
- 前記親水化処理ステップの後に、親水化処理ステップにより生成したOH基を残し、付着した水分子をチップ側接合面上から除去するステップを更に備える、請求項1から25のいずれか一項に記載の方法。
- 一つ又は複数の金属領域を有する第一接合面と当該第一接合面の裏側に位置する第二接合面とを有する所定数のチップからなるチップ層を、複数の層に亘り、複数の接合部を有する基板上に積層して接合する方法であって、
当該方法は、
チップの第一接合面の少なくとも金属領域を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
基板の接合部を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
表面活性化処理されかつ親水化処理された所定数のチップを、それぞれ、チップの金属領域が基板の接合部に接触するように、表面活性化処理されかつ親水化処理された基板の対応する接合部上に取り付けるステップと、
次に取り付けるべき所定数のチップの第一接合面の少なくとも金属領域を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
基板上に積層されているチップの中で最上層の所定数のチップの第二接合面を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化し、かつ水を付着させることにより親水化処理するステップと、
表面活性化処理されかつ親水化処理された前記次に取り付けるべき所定数のチップを、それぞれ、当該チップの金属領域が前記最上層の所定数のチップの第二接合面に接触するように、表面活性化処理されかつ親水化処理された前記最上層の所定数のチップ上に取り付けるステップと、
複数のチップ層に亘りチップを基板上に取り付けた後に、基板と基板上に取り付けられたチップとを含む構造体を加熱するステップと、
を備えた方法。 - 一つ又は複数の金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する装置であって、
チップ側接合面の少なくとも金属領域を表面活性化処理するために、所定の運動エネルギーを有する粒子を当該チップ側接合面に対して衝突させるチップ用表面活性化処理手段と、
基板の接合部を表面活性化処理するために、所定の運動エネルギーを有する粒子を当該基板の接合部に対して衝突させる基板用表面活性化処理手段と、
表面活性化処理されたチップの金属領域を親水化処理するために、当該チップの金属領域に水を付着させるチップ用親水化処理手段と、
表面活性化処理された基板の接合部を親水化処理するために、当該基板の接合部に水を付着させる基板用親水化処理手段と、
複数のチップを、それぞれ、チップの金属領域が基板の接合部に接触するように、基板の対応する接合部上に取り付けるチップ取付手段と、
を備えた装置。 - 前記チップ用表面活性化処理手段により表面活性化処理され、前記チップ用親水化処理手段により親水化処理されたチップ側接合面に水を付着させる水付着手段を更に備えた、請求項28に記載の装置。
- 前記チップ取付手段は、チップを基板に向けて搬送するチップ搬送手段と、当該チップ搬送手段により搬送されたチップを受け取って基板上に載置するチップ載置手段とを有して構成され、
前記水付着手段は、チップ搬送手段に設けられて、チップ載置手段がチップを受け取った後にチップ側接合面に水を吹き付ける、請求項29に記載の装置。 - 前記水付着手段は、チップ搬送手段に形成された孔部を有して構成され、当該孔部を通して水がチップ側接合面に吹き付けられる、請求項30に記載の装置。
- 前記孔部は、チップを真空吸着するためにも使用される、請求項31に記載の装置。
- 前記水付着手段は、チップ取付手段によりチップが移動させられる経路上に配置されて、チップが水付着手段を通過するときにチップ側接合面に向かって水を吹き付ける、請求項29に記載の装置。
- 前記水付着手段は、チップ取付手段によりチップが移動させられる経路上に配置されて、液体状の水を収容する水槽を含む、請求項29に記載の装置。
- チップ用表面活性化処理手段と基板用表面活性化処理手段とは、それぞれ、複数のチップと基板とに対して交番電圧を印加することで、チップ側接合面と基板の接合部との周りに前記粒子を含むプラズマを発生させ、プラズマ中の前記粒子を前記電圧によりチップ側接合面と基板の接合部とに向けて加速させることにより、粒子に所定の運動エネルギーを付与する、プラズマ発生装置を有して構成される、請求項28から34のいずれか一項に記載の装置。
- チップ用表面活性化処理手段と基板用表面活性化処理手段とは、それぞれ、チップ側接合面と基板の接合部とから離間されて配置され、チップ側接合面と基板の接合部とに向けて所定の運動エネルギーを有する粒子を放射する、粒子ビーム源を有して構成される、請求項28から35のいずれか一項に記載の装置。
- チップ用親水化処理手段と基板用親水化処理手段とは、一つの親水化処理手段により実現される、請求項28から36のいずれか一項に記載の装置。
- チップ用表面活性化処理手段とチップ用親水化処理手段とは、共通の粒子ビーム源を有する、請求項28から37のいずれか一項に記載の装置。
- 前記チップ取付手段は、基板の表面に対してチップを垂直方向に移動させるように構成されたヘッドを有し、
前記装置は、
前記チップの移動方向に垂直な面方向に基板を移動可能に支持するステージと、
当該ステージをチップの移動方向に対して固定し、チップ取付手段を前記チップの移動方向に垂直な面方向に対して固定するように支持するフレームと、
を更に有し、
接触しているチップと基板とに対して、チップに対して100N以上の力又はチップの金属領域に対して150MPa以上の圧力を印加することができる、請求項28から38のいずれか一項に記載の装置。 - 前記チップ取付手段は、チップを基板の対応する接合部上に取り付ける際に、前記チップと前記基板とを互いに近接する方向に加圧する手段を更に有し、前記加圧手段は、チップの金属領域に0.3〜600MPaの圧力を印加する、請求項28から39のいずれか一項に記載の装置。
- 前記複数のチップと前記基板とを含む構造体を加熱するための加熱手段を更に備えた、請求項28から40のいずれか一項に記載の装置。
- 前記複数のチップと前記基板とを含む構造体を加熱する際に、当該構造体の雰囲気に還元性ガスを導入する還元処理手段を更に備えた、請求項41に記載の装置。
- 前記還元処理手段は、前記還元性ガスとして、水素を含むガスを前記構造体の雰囲気に導入するように構成され、
前記構造体の雰囲気を真空引きする真空引き手段を更に有する、請求項42に記載の装置。 - 一つ又は複数の金属領域を有する第一接合面を有する複数のチップからなるチップ層を、複数の層に亘り、複数の接合部を有する基板上に積層して接合する装置であって、
チップの第一接合面を表面活性化処理するために、チップの第一接合面に対して所定の運動エネルギーを有する粒子を衝突させる第一接合面用表面活性化処理手段と、
チップの第一接合面の裏側に位置する第二接合面を表面活性化処理するために、チップの第二接合面に対して所定の運動エネルギーを有する粒子を衝突させるチップ第二接合面用表面活性化処理手段と、
基板の接合部を表面活性化処理するために、基板の接合部に対して所定の運動エネルギーを有する粒子を衝突させる基板用表面活性化処理手段と、
表面活性化処理されたチップの第一接合面を親水化処理するために、チップの第一接合面に水を付着させるチップ第一接合面用親水化処理手段と、
表面活性化処理されたチップの当該第一接合面の裏側に位置する第二接合面を親水化処理するために、チップの第二接合面に水を付着させるチップ第二接合面用親水化処理手段と、
基板の接合部を親水化処理するために、基板の接合部に水を付着させる基板用親水化処理手段と、
チップの金属領域が基板の接合部に接触するように、チップを基板の対応する接合部上に取り付け、基板上に取り付けられているチップの第二接合面に次に取り付けられるチップの第一接合面が接触するように、当該チップを基板上に取り付けられているチップ上に取り付けるチップ取付手段と、
を備えた装置。 - 前記基板と前記基板上に複数の層に亘り積層された複数のチップとを含む構造体を加熱するための加熱手段を更に備えた、請求項44に記載の装置。
- 基板と基板上に取り付けられた複数のチップとを含む構造体であって、請求項1から26のいずれか一項に記載の、一つ又は複数の金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する方法により形成された、基板と基板上に取り付けられた複数のチップとを含む構造体。
- 基板と基板上に複数層に亘り取り付けられたチップとを含む構造体であって、請求項27に記載の、一つ又は複数の金属領域を有する第一接合面と当該第一接合面の裏側に位置する第二接合面とを有する所定数のチップからなるチップ層を、複数の層に亘り、複数の接合部を有する基板上に積層して接合する方法により形成された、基板と基板上に複数層に亘り取り付けられたチップとを含む構造体。
- 一つ又は複数の金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する方法であって、
チップ側接合面の少なくとも金属領域を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
基板の接合部を、所定の運動エネルギーを有する粒子を衝突させることにより表面活性化処理し、かつ水を付着させることにより親水化処理するステップと、
表面活性化処理されかつ親水化処理された複数のチップを、それぞれ、チップの金属領域が基板の接合部に接触するように、表面活性化処理されかつ親水化処理された基板の対応する接合部上に取り付けるステップと、
基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップと、
を備え、
前記チップは厚さが10μm〜300μmである、
方法。 - 前記複数のチップを基板の対応する接合部上に取り付けるステップは、チップの金属領域を構成する材料を融点未満の固相状態に加熱することを含む、請求項48に記載の方法。
- 前記複数のチップを基板の対応する接合部上に取り付けるステップの前に、平坦な表面を有する基板で金属領域の表面を押圧するステップを更に備える、請求項48又は49に記載の方法。
- 前記構造体を加熱するステップは、チップの金属領域を構成する材料を融点未満の固相状態で加熱することで行われる、請求項48から50のいずれか一項に記載の方法。
- 一つ又は複数の金属領域を有するチップ側接合面を有する複数のチップを、複数の接合部を有する基板に接合する方法であって、
表面活性化処理された複数のチップを表面活性化処理された基板の対応する接合部上に取り付けるステップと、
基板と基板上に取り付けられた複数のチップとを含む構造体を加熱するステップと、
を備え、
前記複数のチップを前記基板の対応する接合部上に取り付けるステップは、チップの金属領域を構成する材料を融点未満の固相状態で加熱することで行われる、
方法。
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